-
High-field magnetization of a two dimensional spin frustration system Ni$_{5}$(TeO$_{3}$)$_{4}$X$_{2}$ (X = Br and Cl)
Authors:
J. L. Her,
Y. H. Matsuda,
K. Suga,
K. Kindo,
S. Takeyama,
H. Berger,
H. D. Yang
Abstract:
High-field magnetization, M($H$), on Ni$_{5}$(TeO$_{3}$)$_{4}$X$_{2}$ (X = Br and Cl) were measured by using a pulse magnet. These compounds have a two dimensional crystal structure and a distorted kagome spin frustrated system which is builded by the Ni$^{2+}$ ions ($\textbf{S}$ = 1). The Néel transition temperatures are $T_{N} \sim$ 28 and 23 K for X = Br and Cl, respectively. When…
▽ More
High-field magnetization, M($H$), on Ni$_{5}$(TeO$_{3}$)$_{4}$X$_{2}$ (X = Br and Cl) were measured by using a pulse magnet. These compounds have a two dimensional crystal structure and a distorted kagome spin frustrated system which is builded by the Ni$^{2+}$ ions ($\textbf{S}$ = 1). The Néel transition temperatures are $T_{N} \sim$ 28 and 23 K for X = Br and Cl, respectively. When $T < T_{N}$, we observed a step-like transition at $H_{c} \sim$ 11 and 10 T for X = Br and Cl, respectively. On the other hand, at $T > T_{N}$, the field-dependent magnetization curves behaved like a monotonically increasing straight line up to 55 T. The $H_{c}$ value is close to those obtained by previous spin resonance studies in which a model of spin-flop scenario was proposed to explain the field-dependent resonance spectra. Their model predicts a further transition at around 23 T, however, our observations did not show any plateau behaviors, saturation or other anomalies up to 55 T, suggesting that the further transition possibly exists at a much higher field region.
△ Less
Submitted 26 June, 2009;
originally announced June 2009.
-
Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet
Authors:
Satoru Masubuchi,
Ken-ichi Suga,
Masashi Ono,
Koichi Kindo,
Shojiro Takeyama,
Tomoki Machida
Abstract:
We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)ν^{-1}$ with $ν$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even o…
▽ More
We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)ν^{-1}$ with $ν$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility $μ$ = 4000 cm$^2$/Vs.
△ Less
Submitted 9 October, 2008; v1 submitted 13 August, 2008;
originally announced August 2008.
-
Intrinsic mechanism for high temperature ferromagnetism in GaMnN
Authors:
Saki Sonoda,
Isao Tanaka,
Hidekazu Ikeno,
Tomoyuki Yamamoto,
Fumiyasu Oba,
Tsutomu Araki,
Yoshiyuki Yamamoto,
Ken-ichi Suga,
Yasushi Nanishi,
Youichi Akasaka,
Koichi Kindo,
Hidenobu Hori
Abstract:
Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of GaMnN films showing room temperature ferromagnetism and p-type conductivity has been reported. The estimated Curie temperature was 940K at 5.7% of Mn, which is…
▽ More
Considerable efforts have been devoted recently to synthesize diluted magnetic semiconductors having ferromagnetic properties at room temperature because of their technological impacts for spintronic devices. In 2001 successful growth of GaMnN films showing room temperature ferromagnetism and p-type conductivity has been reported. The estimated Curie temperature was 940K at 5.7% of Mn, which is highest among diluted magnetic semiconductors ever been reported. However, the electronic mechanism behind the ferromagnetic behaviour has still been controversial. Here we show experimental evidence using the ferromagnetic samples that Mn atoms are substitutionally dissolved into the GaN lattice and they exhibit mixed valences of +2 (majority) and +3 (minority). The p-type carrier density decreases significantly at very low temperatures. At the same time, magnetization dramatically decreases. The results imply that the ferromagnetic coupling between Mn atoms is mediated by holes in the mid-gap Mn band.
△ Less
Submitted 17 November, 2005;
originally announced November 2005.
-
Properties of Ferromagnetic Ga1-xMnxN Films Grown by Ammonia-MBE
Authors:
Saki Sonoda,
Hidenobu Hori,
Yoshiyuki Yamamoto,
Takahiko Sasaki,
Masugu Sato,
Saburo Shimizu,
Ken-ichi Suga,
Koichi Kindo
Abstract:
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The f…
▽ More
Using ammonia as nitrogen source for molecular beam epitaxy, the GaN-based diluted magnetic semiconductor Ga1-xMnxN is successfully grown with Mn concentration up to x~6.8% and with p-type conductivity. The films have wurtzite structure with substitutional Mn on Ga site in GaN. Magnetization measurements revealed that Ga1-xMnxN is ferromagnetic at temperatures higher than room temperature. The ferromagnetic-paramagnetic transition temperature, Tc, depends on the Mn concentration of the film. At low temperatures, the magnetization increases with increasing of magnetic field, implying that a paramagnetic-like phase coexists with ferromagnetic one. Possible explanations will be proposed for the coexistence of two magnetic phases in the grown films.
△ Less
Submitted 27 May, 2002;
originally announced May 2002.
-
High TC ferromagnetism in diluted magnetic semiconducting GaN:Mn films
Authors:
H. Hori,
S. Sonoda,
T. Sasaki,
Y. Yamamoto,
S. Shimizu,
K. Suga,
K. Kindo
Abstract:
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferro…
▽ More
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferromagnetic and paramagnetic contributions at low temperatures, while the typical ferromagnetic magnetization process is mainly observed at high temperatures because of the decrease of the paramagnetic contributions. The observed transport characteristics show a close relation between the magnetism and the impurity conduction. The double exchange mechanism of the Mn-impurity band is one of the possible models for the high-TC ferromagnetism in GaN:Mn.
△ Less
Submitted 11 March, 2002;
originally announced March 2002.
