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Hydrogen trapping at surface and subsurface vacancies of low-index surfaces of Pd
Authors:
A. V. Subashiev,
H. H. Nee
Abstract:
Hydrogen segregation to vacancies in the surface and subsurface layers of (111) and (100) surfaces of Pd is studied in the density functional theory (DFT) approach. Adsorption energies and configurations of various clusters of H atoms at the vacancies are calculated. The adsorption energy varies for different sites in the vacancies with the distance to the surface from -0.26 eV (close to that of t…
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Hydrogen segregation to vacancies in the surface and subsurface layers of (111) and (100) surfaces of Pd is studied in the density functional theory (DFT) approach. Adsorption energies and configurations of various clusters of H atoms at the vacancies are calculated. The adsorption energy varies for different sites in the vacancies with the distance to the surface from -0.26 eV (close to that of the bulk clusters) to -0.62 eV. Enhanced binding is found for the sites above the pores produced by vacancies in the subsurface layer. For the (111) surface vacancy the most favorable for segregation are tetrahedral lattice sites, while for (100) octa-sites have higher binding energy. Lattice relaxation effects are minor for the (111) surface but noticeably enhanced for the (100) surface. Hydrogen segregation to surface layer vacancies is accompanied with minimal charge transfer, which shows itself in cluster configurations. At high surface coverage the reduction of the cluster formation energy due to the H segregation should result in strongly enlarged concentration of the subsurface vacancy clusters, while the surface remains undamaged due to the prevailing surface adsorption.
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Submitted 1 May, 2020;
originally announced May 2020.
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Temperature controlled Lévy flights of minority carriers in photoexcited bulk n-InP
Authors:
Arsen V. Subashiev,
Oleg Semyonov,
Zhichao Chen,
Serge Luryi
Abstract:
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "Lévy flight" random walk of holes, in which the Lévy distribution index gamma is controlled by the temperature. We show that the variation γ(T) is close…
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We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization of the "Lévy flight" random walk of holes, in which the Lévy distribution index gamma is controlled by the temperature. We show that the variation γ(T) is close to that predicted earlier on the basis of the assumed quasi-equilibrium (van Roosbroek-Shockley) intrinsic emission spectrum, γ=1-Δ/kT, where Δ(T) is the Urbach tailing parameter of the absorption spectra. The decreasing γat lower temperatures results in a giant enhancement in the spread of holes -- over distances exceeding 1 cm from the region of photo-excitation.
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Submitted 18 February, 2013;
originally announced February 2013.
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Plasmonic mediated nucleation of resonant nano-cavities in metallic layers
Authors:
V. G. Karpov,
M. Nardone,
A. V. Subashiev
Abstract:
We predict plasmonic mediated nucleation of pancake shaped resonant nano-cavities in metallic layers that are penetrable to laser fields. The underlying physics is that the cavity provides a narrow plasmonic resonance that maximizes its polarizability in an external field. The resonance yields a significant energy gain making the formation of such cavities highly favorable. Possible implications i…
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We predict plasmonic mediated nucleation of pancake shaped resonant nano-cavities in metallic layers that are penetrable to laser fields. The underlying physics is that the cavity provides a narrow plasmonic resonance that maximizes its polarizability in an external field. The resonance yields a significant energy gain making the formation of such cavities highly favorable. Possible implications include nano-optics and generation of the dielectric bits in conductive films that underlie the existing optical recording phase change technology.
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Submitted 13 May, 2012;
originally announced May 2012.
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Photon assisted Levy flights of minority carriers in n-InP
Authors:
Oleg Semyonov,
Arsen V. Subashiev,
Zhichao Chen,
Serge Luryi
Abstract:
We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to re-absorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off wi…
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We study the photoluminescence spectra of n-doped InP bulk wafers, both in the reflection and the transmission geometries relative to the excitation beam. From the observed spectra we estimate the spatial distribution of minority carriers allowing for the spectral filtering due to re-absorption of luminescence in the wafer. This distribution unambiguously demonstrates a non-exponential drop-off with distance from the excitation region. Such a behavior evidences an anomalous photon-assisted transport of minority carriers enhanced owing to the high quantum efficiency of emission. It is shown that the transport conforms very well to the so-called Levy-flights process corresponding to a peculiar random walk that does not reduce to diffusion. The index gamma of the Levy flights distribution is found to be in the range gamma = 0.64 to 0.79, depending on the doping. Thus, we propose the high-efficiency direct-gap semiconductors as a remarkable laboratory system for studying the anomalous transport.
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Submitted 30 December, 2011;
originally announced January 2012.
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Reduction of optical reflection from InP semiconductor wafers after high-temperature annealing
Authors:
Oleg G. Semyonov,
Arsen V. Subashiev,
Alexander Shabalov,
Nadia Lifshitz,
Zhichao Chen,
Takashi Hosoda,
Serge Luryi
Abstract:
We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the tem…
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We observed and studied strong reduction of optical reflection from the surface of InP wafers after high-temperature annealing. The effect is observed over a wide range of the incident wavelengths, and in the transparency band of the material it is accompanied by increasing transmission. The spectral position of a minimum (almost zero) of the reflection coefficient can be tuned, by varying the temperature and the time of annealing, in the spectral range between 0.5 and 6 eV. The effect is explained by the formation of a uniform oxide layer, whose parameters (thicknesses and average index) are estimated by detailed modeling.
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Submitted 22 December, 2011;
originally announced December 2011.
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Urbach tail studies by luminescence filtering in moderately doped bulk InP
Authors:
Arsen V. Subashiev,
Oleg Semyonov,
Zhinchao Chen,
Serge Luryi
Abstract:
The shape of the photoluminescence line registered from a side edge of InP wafer is studied as function of the distance from the excitation spot. The observed red shift in the luminescence maximum is well described by radiation filtering and is consistent with the absorption spectra. Our method provides an independent and accurate determination of the Urbach tails in moderately doped semiconductor…
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The shape of the photoluminescence line registered from a side edge of InP wafer is studied as function of the distance from the excitation spot. The observed red shift in the luminescence maximum is well described by radiation filtering and is consistent with the absorption spectra. Our method provides an independent and accurate determination of the Urbach tails in moderately doped semiconductors.
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Submitted 1 September, 2010;
originally announced September 2010.
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Fluctuations of the partial filling factors in competitive RSA from binary mixtures
Authors:
Arsen V. Subashiev,
Serge Luryi
Abstract:
Competitive random sequential adsorption on a line from a binary mix of incident particles is studied using both an analytic recursive approach and Monte Carlo simulations. We find a strong correlation between the small and the large particle distributions so that while both partial contributions to the fill factor fluctuate widely, the variance of the total fill factor remains relatively small.…
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Competitive random sequential adsorption on a line from a binary mix of incident particles is studied using both an analytic recursive approach and Monte Carlo simulations. We find a strong correlation between the small and the large particle distributions so that while both partial contributions to the fill factor fluctuate widely, the variance of the total fill factor remains relatively small. The variances of partial contributions themselves are quite different between the smaller and the larger particles, with the larger particle distribution being more correlated. The disparity in fluctuations of partial fill factors increases with the particle size ratio. The additional variance in the partial contribution of smaller particle originates from the fluctuations in the size of gaps between larger particles. We discuss the implications of our results to semiconductor high-energy gamma detectors where the detector energy resolution is controlled by correlations in the cascade energy branching process.
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Submitted 12 October, 2007; v1 submitted 10 April, 2007;
originally announced April 2007.
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Random sequential adsorption of shrinking or spreading particles
Authors:
Arsen V. Subashiev,
Serge Luryi
Abstract:
We present a model of one-dimensional irreversible adsorption in which particles once adsorbed immediately shrink to a smaller size or expand to a larger size. Exact solutions for the fill factor and the particle number variance as a function of the size change are obtained. Results are compared with approximate analytical solutions.
We present a model of one-dimensional irreversible adsorption in which particles once adsorbed immediately shrink to a smaller size or expand to a larger size. Exact solutions for the fill factor and the particle number variance as a function of the size change are obtained. Results are compared with approximate analytical solutions.
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Submitted 27 November, 2006; v1 submitted 22 September, 2006;
originally announced September 2006.
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Modal control in semiconductor optical waveguides with uniaxially patterned layers
Authors:
Arsen V. Subashiev,
Serge Luryi
Abstract:
Uniaxially patterned dielectric layers have an optical anisotropy that can be externally controlled. We study the effects of patterning the cladding or the core layer of a 3-layer optical waveguide on the polarization properties of propagating radiation. Particular attention is paid to the case when the core material is a semiconductor with optical gain. We discuss a number of devices based on i…
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Uniaxially patterned dielectric layers have an optical anisotropy that can be externally controlled. We study the effects of patterning the cladding or the core layer of a 3-layer optical waveguide on the polarization properties of propagating radiation. Particular attention is paid to the case when the core material is a semiconductor with optical gain. We discuss a number of devices based on incorporating an uniaxially patterned layer in the structure design, such as a polarization-insensitive amplifier, a polarizer, an optically-controlled polarization switch, and an optically controlled modal coupler.
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Submitted 26 May, 2005;
originally announced May 2005.
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Strain-Compensated AlInGaAs-GaAsP Superlattices for Highly-Polarized Electron Emission
Authors:
A. V. Subashiev,
L. G. Gerchikov,
Yu. A. Mamaev,
Yu. P. Yashin,
J. S. Roberts,
D. -A. Luh,
T. Maruyama,
J. E. Clendenin
Abstract:
Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 um-thick working layer are close to the best results report…
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Spin-polarized electron emission from the first superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is complished using an InAlGaAs/GaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 um-thick working layer are close to the best results reported for any strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.
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Submitted 7 January, 2005;
originally announced January 2005.
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Space Charge Expansion for Time-resolved Spin-Polarized Electron Spectroscopy
Authors:
K. Aulenbacher,
A. V. Subashiev,
V. Tioukine,
D. Bender,
Yu. P. Yashin
Abstract:
Time resolved spin-polarized electron photoemission spectra are investigated as a function of excitation pulse energy for the heterostructures with a single strained layer and with a strained-well superlattice. At an average current exceeding 10 nA the emission pulse profiles are modified by the space charge pulse expansion during the electron transport to detector. The pulse expansion enables t…
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Time resolved spin-polarized electron photoemission spectra are investigated as a function of excitation pulse energy for the heterostructures with a single strained layer and with a strained-well superlattice. At an average current exceeding 10 nA the emission pulse profiles are modified by the space charge pulse expansion during the electron transport to detector. The pulse expansion enables the separation of electrons that have spent minimum time in the sample. For the superlattice structure these electrons showed maximum polarization above 90 %. Variation in the pulse profiles for the two structures is interpreted as resulting from the difference in the effective NEA values.
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Submitted 2 April, 2004;
originally announced April 2004.
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Optical Spin Orientation in Strained Superlattices
Authors:
A. V. Subashiev,
L. G. Gerchikov,
A. I. Ipatov
Abstract:
Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh- and lh- states of the valence band, the joint strain and confinement…
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Optical orientation in the strained semiconductor superlattices is investigated theoretically. The dependence of the features in spin-polarization spectra on the structure parameters is clarified. The value of polarization in the first polarization maximum in the SL structures is shown to grow with the splitting between the hh- and lh- states of the valence band, the joint strain and confinement effects on the hh1- lh1 splitting being strongly influenced by the tunneling in the barriers. In strained structures with high barriers for the holes initial polarization can exceed 95 %. Calculated polarization spectra are close to the experimental spectra of polarized electron emission.
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Submitted 31 December, 2003;
originally announced December 2003.
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Photovoltage Effects in Photoemission from Thin GaAs Layers
Authors:
G. A. Mulhollan,
A. V. Subashiev,
J. E. Clendenin,
E. L. Garwin,
R. E. Kirby,
T. Maruyama,
R. Prepost
Abstract:
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA e…
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A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5\times10^{18} cm^{-3} to 5\times10^{19} cm^{-3} for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovoltage effect on photoemission is found to diminish to zero at a doping level of 5\times10^{19} cm^{-3}. The experimental results are shown to be in good agreement with calculations using a charge limit model based on surface photovoltage kinetics that assume a constant electron energy relaxation rate in the band bending region.
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Submitted 23 March, 2001;
originally announced March 2001.
