Showing 1–3 of 3 results for author: Suarez, A M

Magnetic Structure of Hydrogen Induced Defects on Graphene

Authors: J. O. Sofo, Gonzalo Usaj, P. S. Cornaglia, A. M. Suarez, A. D. Hernández-Nieves, C. A. Balseiro

Abstract: Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hub… ▽ More Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hubbard model that captures the main physical ingredients of the system, while still allowing a rigorous treatment of the electronic correlations. We find that the large hydrogen-carbon hybridization puts the structure of the defect half-way between the one corresponding to an adatom weakly coupled to pristine graphene and a carbon vacancy. The impurity's magnetic moment leaks into the graphene layer where the electronic correlations on the C atoms play an important role in stabilizing the magnetic solution. Finally, we discuss the implications for the Kondo effect. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Comments: 10 pages, 10 figs

Journal ref: Phys. Rev. B 85, 115405 (2012)

Electrical Control of the Chemical Bonding of Fluorine on Graphene

Authors: J. O. Sofo, A. M. Suarez, Gonzalo Usaj, P. S. Cornaglia, A. D. Hernández-Nieves, C. A. Balseiro

Abstract: We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier doping. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. A… ▽ More We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier doping. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. As the graphene is electron-doped, the C atom retracts back to the graphene plane and for high doping (10^14 cm^-2) its electronic structure corresponds to a nearly pure sp^2 configuration. We interpret this sp^3-sp^2 doping-induced crossover in terms of a simple tight binding model and discuss the physical consequences of this change. △ Less

Submitted 24 January, 2011; originally announced January 2011.

Comments: 4 pages, 4 figures. Accepted in Phys. Rev. B. Rapid Comm

Journal ref: Phys. Rev. B 83, 081411(R) (2011)

Study of the resistivity in a channel with dephased ripples

Authors: Gabriel Arroyo-Correa, Ivan Herrera-Gonzalez, Alberto Mendoza Suarez, Eduardo S. Tututi

Abstract: We study the transport properties of classical particles in the ballistic regime trapped in a two-dimensional channel with dephased ripple boundaries. By taking into account small ripple amplitudes an analytical approximate expression for the classical resistivity is obtained. We show that the resistivity can be increased considerably by dephasing the walls of the channel. Our results are compar… ▽ More We study the transport properties of classical particles in the ballistic regime trapped in a two-dimensional channel with dephased ripple boundaries. By taking into account small ripple amplitudes an analytical approximate expression for the classical resistivity is obtained. We show that the resistivity can be increased considerably by dephasing the walls of the channel. Our results are compared with those obtained for a channel composed of a flat and a sinusoidal boundaries. △ Less

Submitted 13 January, 2010; v1 submitted 23 November, 2009; originally announced November 2009.

Comments: 19 pages, 20 figures, submitted to JNOPM