Showing 1–6 of 6 results for author: Su, H B

Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching

Authors: Z. Q. Liu, D. P. Leusink, W. M. Lü, X. Wang, X. P. Yang, K. Gopinadhan, Y. T. Lin, A. Annadi, Y. L. Zhao, A. Roy Barman, S. Dhar, Y. P. Feng, H. B. Su, G. Xiong, T. Venkatesan, Ariando

Abstract: We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the LaAlO3 thin film which indicates that a minimum thickness is required for the MIT. A constant opposing voltage is required to deplete the charges from the defect st… ▽ More We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the LaAlO3 thin film which indicates that a minimum thickness is required for the MIT. A constant opposing voltage is required to deplete the charges from the defect states. Our experimental results exclude the possibility of diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. The thickness dependent reverse switch-on voltage and the constant forward switch-off voltage are consistent with our model. The viewpoint proposed here can provide an alternative mechanism for resistive switching in complex oxides. △ Less

Submitted 7 October, 2011; originally announced October 2011.

Comments: 5 pages, 4 figures

Journal ref: PhysRevB.84.165106 (2011)

Direct observation of room temperature high-energy resonant excitonic effects in graphene

Authors: I. Santoso, P. K Gogoi, H. B. Su, H. Huang, Y. Lu, D. Qi, W. Chen, M. A. Majidi, Y. P. Feng, A. T. S. Wee, K. P. Loh, T. Venkatesan, R. P. Saichu, A. Goos, A. Kotlov, M. Ruebhausen, A. Rusydi

Abstract: Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of reso… ▽ More Using a combination of ultraviolet-vacuum ultraviolet reflectivity and spectroscopic ellipsometry, we observe a resonant exciton at an unusually high energy of 6.3eV in epitaxial graphene. Surprisingly, the resonant exciton occurs at room temperature and for a very large number of graphene layers $N$$\approx$75, thus suggesting a poor screening in graphene. The optical conductivity ($σ_1$) of resonant exciton scales linearly with number of graphene layer (up to \emph{at least} 8 layers) implying quantum character of electrons in graphene. Furthermore, a prominent excitation at 5.4eV, which is a mixture of interband transitions from $π$ to $π^{*}$ at the M point and a $π$ plasmonic excitation, is observed. In contrast, for graphite the resonant exciton is not observable but strong interband transitions are seen instead. Supported by theoretical calculations, for $N \leq$ 28 the $σ_1$ is dominated by the resonant exciton, while for $N >$ 28 it is a mixture between exitonic and interband transitions. The latter is characteristic for graphite, indicating a crossover in the electronic structure. Our study shows that important elementary excitations in graphene occur at high binding energies and elucidate the differences in the way electrons interact in graphene and graphite. △ Less

Submitted 16 January, 2011; originally announced January 2011.

Comments: 5 pages, 3 figures (accepted)

Journal ref: Physical Review B Rapid Communications (2011)

Nonlinear Insulator in Complex Oxides

Authors: Z. Q. Liu, D. P. Leusink, W. M. Lü, X. Wang, X. P. Yang, K. Gopinadhan, A. Annadi, S. Dhar, Y. P. Feng, H. B. Su, G. Xiong, T. Venkatesan, Ariando

Abstract: The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semic… ▽ More The insulating state is one of the most basic electronic phases in condensed matter. This state is characterised by an energy gap for electronic excitations that makes an insulator electrically inert at low energy. However, for complex oxides, the very concept of an insulator must be re-examined. Complex oxides behave differently from conventional insulators such as SiO2, on which the entire semiconductor industry is based, because of the presence of multiple defect levels within their band gap. As the semiconductor industry is moving to such oxides for high-dielectric (high-k) materials, we need to truly understand the insulating properties of these oxides under various electric field excitations. Here we report a new class of material called nonlinear insulators that exhibits a reversible electric-field-induced metal-insulator transition. We demonstrate this behaviour for an insulating LaAlO3 thin film in a metal/LaAlO3/Nb-SrTiO3 heterostructure. Reproducible transitions were observed between a low-resistance metallic state and a high-resistance non-metallic state when applying suitable voltages. Our experimental results exclude the possibility that diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer is occurring. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. An opposing voltage is required to deplete the charges from the defect states. Our ability to manipulate and control these defect states and, thus, the nonlinear insulating properties of complex oxides will open up a new path to develop novel devices. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Comments: 23 pages, 4 figures

Effects of Space Charge, Dopants, and Strain Fields on Surfaces and Grain Boundaries in YBCO Compounds

Authors: H. B. Su, D. O. Welch

Abstract: Statistical thermodynamical and kinetically-limited models are applied to study the origin and evolution of space charges and band-bending effects at low angle [001] tilt grain boundaries in YBa$_2$Cu$_3$O$_7$ and the effects of Ca doping upon them. Atomistic simulations, using shell models of interatomic forces, are used to calculate the energetics of various relevant point defects. The intrins… ▽ More Statistical thermodynamical and kinetically-limited models are applied to study the origin and evolution of space charges and band-bending effects at low angle [001] tilt grain boundaries in YBa$_2$Cu$_3$O$_7$ and the effects of Ca doping upon them. Atomistic simulations, using shell models of interatomic forces, are used to calculate the energetics of various relevant point defects. The intrinsic space charge profiles at ideal surfaces are calculated for two limits of oxygen contents, i.e. YBa$_2$Cu$_3$O$_6$ and YBa$_2$Cu$_3$O$_7$. At one limit, O$_6$, the system is an insulator, while at O$_7$, a metal. This is analogous to the intrinsic and doping cases of semiconductors. The site selections for doping calcium and creating holes are also investigated by calculating the heat of solution. In a continuum treatment, the volume of formation of doping calcium at Y-sites is computed. It is then applied to study the segregation of calcium ions to grain boundaries in the Y-123 compound. The influences of the segregation of calcium ions on space charge profiles are finally studied to provide one guide for understanding the improvement of transport properties by doping calcium at grain boundaries in Y-123 compound. △ Less

Submitted 17 November, 2004; v1 submitted 17 November, 2004; originally announced November 2004.

Comments: 13 pages, 5 figures

Journal ref: Supercond. Sci. Tech. 18 (2005) 24-34

Strain Effects on Point Defects and Chain-Oxygen Order-Disorder Transition in 123-Structure Cuprate Superconductors

Authors: H. B. Su, D. O. Welch, Winnie Wong-Ng

Abstract: The energetics of Schottky defects in 123 cuprate superconductor series, $\rm REBa_2Cu_3O_7$ (where RE = lanthandies) and $\rm YAE_2Cu_3O_7$ (AE = alkali-earths), were found to have unusual relations if one considers only the volumetric strain. Our calculations reveal the effect of non-uniform changes of interatomic distances within the RE-123 structures, introduced by doping homovalent elements… ▽ More The energetics of Schottky defects in 123 cuprate superconductor series, $\rm REBa_2Cu_3O_7$ (where RE = lanthandies) and $\rm YAE_2Cu_3O_7$ (AE = alkali-earths), were found to have unusual relations if one considers only the volumetric strain. Our calculations reveal the effect of non-uniform changes of interatomic distances within the RE-123 structures, introduced by doping homovalent elements, on the Schottky defect formation energy. The energy of formation of Frenkel Pair defects, which is an elementary disordering event, in 123 compounds can be substantially altered under both stress and chemical doping. Scaling the oxygen-oxygen short-range repulsive parameter using the calculated formation energy of Frenkel pair defects, the transition temperature between orthorhombic and tetragonal phases is computed by quasi-chemical approximations (QCA). The theoretical results illustrate the same trend as the experimental measurements in that the larger the ionic radius of RE, the lower the orthorhombic/tetragonal phase transition temperature. This study provides strong evidence of the strain effects on order-disorder transition due to oxygens in the CuO chain sites. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Comments: In print Phys Rev B (2004)

Journal ref: Phys. Rev. B 70, 054517 (2004)

Density Functional Theory and Molecular Dynamics Studies on Energetics and Kinetics for Electro-Active Polymers: PVDF and P(VDF-TrFE)

Authors: H. B. Su, Alejandro Strachan, William A. Goddard III

Abstract: We use first principles methods to study static and dynamical mechanical properties of the ferroelectric polymer Poly(vinylidene fluoride) (PVDF) and its copolymer with trifluoro ethylene (TrFE). We use density functional theory [within the generalized gradient approximation (DFT-GGA)] to calculate structures and energetics for various crystalline phases for PVDF and P(VDF-TrFE). We find that th… ▽ More We use first principles methods to study static and dynamical mechanical properties of the ferroelectric polymer Poly(vinylidene fluoride) (PVDF) and its copolymer with trifluoro ethylene (TrFE). We use density functional theory [within the generalized gradient approximation (DFT-GGA)] to calculate structures and energetics for various crystalline phases for PVDF and P(VDF-TrFE). We find that the lowest energy phase for PVDF is a non-polar crystal with a combination of trans (T) and gauche (G) bonds; in the case of the copolymer the role of the extra (bulkier) F atoms is to stabilize T bonds. This leads to the higher crystallinity and piezoelectricity observed experimentally. Using the MSXX first principles-based force field (FF) with molecular dynamics (MD), we find that the energy barrier necessary to nucleate a kink (gauche pairs separated by trans bonds) in an all-T crystal is much lower (14.9 kcal/mol) in P(VDF-TrFE) copolymer than in PVDF (24.8 kcal/mol). This correlates with the observation that the polar phase of the copolymer exhibits a solid-solid a transition to a non-polar phase under heating while PVDF directly melts. We also studied the mobility of an interface between a polar and non-polar phases under uniaxial stress; we find a lower threshold stress and a higher mobility in the copolymer as compared with PVDF. Finally, considering plastic deformation under applied shear, we find that the chains for P(VDF-TrFE) have a very low resistance to sliding, particularly along the chain direction. The atomistic characterization of these "unit mechanisms" provides essential input to mesoscopic or macroscopic models of electro-active polymers. △ Less

Submitted 9 August, 2004; originally announced August 2004.

Comments: 15 pages 9 figures Electro-active polymer

Journal ref: Phys. Rev. B 70, 064101 (2004)