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VO$_2$ films grown on TiO$_2$ sub-layer: influence of thickness on structural, electrical and optical properties
Authors:
M. E. Kutepov,
V. E. Kaydashev,
D. V. Stryukov,
A. S. Konstantinov,
A. V. Nikolskiy,
A. T. Kozakov,
A. D. Morozov,
E. M. Kaidashev
Abstract:
Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO$_2$-based active metasurfaces are urgently needed however several important issues related to VO$_2$ properties in VO$_2$/TiO$_2$/Al$_2$O$_3$ films should be thoroughly exam…
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Vanadium dioxide with metal-to-insulator transition (MIT) that is triggered by heat, current or light is a promising material for modern active THz/mid-IR metasurfaces and all-optical big data processing systems. Multilayer VO$_2$-based active metasurfaces are urgently needed however several important issues related to VO$_2$ properties in VO$_2$/TiO$_2$/Al$_2$O$_3$ films should be thoroughly examined first. We study electrical, optical and structural properties of VO$_2$ films as well as their composition and switching characteristics as function of the VO$_2$ layer thickness in VO$_2$/TiO$_2$ composites. XRD analysis revealed an epitaxial growth of films with deformation of the monoclinic VO$_2$ lattice to hexagonal symmetry. Reduced VO$_2$ layer thickness from 170 nm to 20 nm results in increased phase transition temperature while the width of the resistance versus temperature hysteresis loop R(T) remains constant at ~6C for all VO$_2$ thicknesses in the range of 20-170 nm. The resistance alteration ratio is reduced from 4.2e3 to 2.7e2 in thinner films. Raman spectra reveal a significant shift of VO$_2$ lattice vibration modes for films thinner than 30 nm claiming a great structural strain whereas modes position for thicker VO$_2$ layers are similar to those in bulk structure. Composition of VO$_2$ films has revealed only a minor alteration of VO$_2$/V$_2$O$_5$ phases ratio from 1.6 to 1.8 when the film thickness has been increased from 20 nm to 50 nm. Investigation of surface elemental composition and valence states of VO$_2$ films revealed that VO$_2$/V$_2$O$_5$ ratio remains practically unchanged with thickness reduction. The study of electrical MIT dynamics revealed the switching time of a 50 nm VO$_2$ film to be as low as 800 ns.
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Submitted 22 November, 2024;
originally announced November 2024.
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Phase transition between two different orientations of the Q phase in the NaNbO$_3$ thin film
Authors:
A. V. Pavlenko,
D. V. Stryukov,
M. V. Vladimirov,
A. E. Ganzha,
S. A. Udovenko,
Anjana Joseph,
Janaky Sunil,
Chandrabhas Narayana,
R. G. Burkovsky,
I. P. Raevski,
N. V. Ter-Oganessian
Abstract:
Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and Raman spectroscopy. It is found that at room temperature NaNbO$_3$ is in ferroelectric state, whereas the temperature-dependent dielectric constant experiences…
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Temperature evolution of dielectric response, atomic structure, and lattice dynamics in thin film of sodium niobate in the epitaxial NaNbO$_3$/SrRuO$_3$/(001)MgO heterostructure is studied by dielectric measurements, x-ray diffraction, and Raman spectroscopy. It is found that at room temperature NaNbO$_3$ is in ferroelectric state, whereas the temperature-dependent dielectric constant experiences a broad maximum at 440~K on cooling and at 500~K on heating and reveals a diffuse phase transition. Reciprocal space mapping shows the presence of both anti-phase and in-phase tilting of oxygen octahedra. The temperature dependence of the M-point reflections suggests reorientation of the in-phase octahedra tilting axis from being parallel to the substrate at room temperature to perpendicular orientation at high temperatures. The temperature evolution of the shape of the Raman spectra reveal the decrease of the number of constituting peaks on heating. These results are interpreted as indicating a temperature-driven transition between two different orientations of the bulk ferroelectric Q phase with respect to the interface, namely between the state with electric polarization pointing at $\approx45^{\rm o}$ to the normal at room temperature to the state with polarization parallel to the interface above the transition. Transitions of this kind can be anticipated from theoretical considerations, while the experimental evidences of such are yet scarce.
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Submitted 8 December, 2021;
originally announced December 2021.
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Built-in electric field induces polarization rotation in bilayer BiFeO3/(Ba,Sr)TiO3 thin films
Authors:
A. G. Razumnaya,
A. S. Mikheykin,
D. V. Stryukov,
A. S. Anokhin,
A. V. Pavlenko,
V. B. Shirokov,
M. A. Kaliteevski,
D. Mezzane,
I. Luk'yanchuk
Abstract:
The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence of mismatch-induced strains and spontaneous polarization in BST buffer layers on BFO layers. The lattice parameter of the BFO layers was shown to decrease with…
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The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence of mismatch-induced strains and spontaneous polarization in BST buffer layers on BFO layers. The lattice parameter of the BFO layers was shown to decrease with increasing concentration of Ba ions, despite the increasing in-plain lattice parameters of tetragonal unit cells of BST layers. The rhombohedral angle of the crystal structure of BFO layers demonstrates an increase towards the ideal cubic perovskite structure with the appearance of the built-in electric field, induced by the spontaneous polarization in buffer layers. This result provides a remarkable tool for the control of polarization in BFO layers and other ferroelectric films in general, by changing the built-in electric field from ferroelectric buffer layer without changing a single crystal substrate.
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Submitted 7 October, 2019;
originally announced October 2019.
