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Energy landscapes of combinatorial optimization in Ising machines
Authors:
Dmitrii Dobrynin,
Adrien Renaudineau,
Mohammad Hizzani,
Dmitri Strukov,
Masoud Mohseni,
John Paul Strachan
Abstract:
Physics-based Ising machines (IM) have been developed as dedicated processors for solving hard combinatorial optimization problems with higher speed and better energy efficiency. Generally, such systems employ local search heuristics to traverse energy landscapes in searching for optimal solutions. Here, we quantify and address some of the major challenges met by IMs by extending energy-landscape…
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Physics-based Ising machines (IM) have been developed as dedicated processors for solving hard combinatorial optimization problems with higher speed and better energy efficiency. Generally, such systems employ local search heuristics to traverse energy landscapes in searching for optimal solutions. Here, we quantify and address some of the major challenges met by IMs by extending energy-landscape geometry visualization tools known as disconnectivity graphs. Using efficient sampling methods, we visually capture landscapes of problems having diverse structure and hardness manifesting as energetic and entropic barriers for IMs. We investigate energy barriers, local minima, and configuration space clustering effects caused by locality reduction methods when embedding combinatorial problems to the Ising hardware. To this end, we sample disconnectivity graphs of PUBO energy landscapes and their different QUBO mappings accounting for both local minima and saddle regions. We demonstrate that QUBO energy landscape properties lead to the subpar performance for quadratic IMs and suggest directions for their improvement.
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Submitted 28 August, 2024; v1 submitted 2 March, 2024;
originally announced March 2024.
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Stateful characterization of resistive switching TiO2 with electron beam induced currents
Authors:
Brian D. Hoskins,
Gina C. Adam,
Evgheni Strelcov,
Nikolai Zhitenev,
Andrei Kolmakov,
Dmitri B. Strukov,
Jabez J. McClelland
Abstract:
Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By…
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Metal oxide resistive switches are increasingly important as possible artificial synapses in next generation neuromorphic networks. Nevertheless, there is still no codified set of tools for studying properties of the devices. To this end, we demonstrate electron beam induced current measurements as a powerful method to monitor the development of local resistive switching in TiO2 based devices. By comparing beam-energy dependent electron beam induced currents with Monte Carlo simulations of the energy absorption in different device layers, it is possible to deconstruct the origins of filament image formation and relate this to both morphological changes and the state of the switch. By clarifying the contrast mechanisms in electron beam induced current microscopy it is possible to gain new insights into the scaling of the resistive switching phenomenon and observe the formation of a current leakage region around the switching filament. Additionally, analysis of symmetric device structures reveals propagating polarization domains.
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Submitted 30 October, 2017; v1 submitted 5 April, 2017;
originally announced April 2017.
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Highly-Secure Physically Unclonable Cryptographic Primitives Using Nonlinear Conductance and Analog State Tuning in Memristive Crossbar Arrays
Authors:
Hussein Nili,
Gina C. Adam,
Mirko Prezioso,
Jeeson Kim,
Farnood Merrikh-Bayat,
Omid Kavehei,
Dmitri B. Strukov
Abstract:
The rapidly expanding hardware-intrinsic security primitives are aimed at addressing significant security challenges of a massively interconnected world in the age of information technology. The main idea of such primitives is to employ instance-specific process-induced variations in electronic hardware as a source of cryptographic data. Among the emergent technologies, memristive devices provide…
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The rapidly expanding hardware-intrinsic security primitives are aimed at addressing significant security challenges of a massively interconnected world in the age of information technology. The main idea of such primitives is to employ instance-specific process-induced variations in electronic hardware as a source of cryptographic data. Among the emergent technologies, memristive devices provide unique opportunities for security applications due to the underlying stochasticity in their operation. Herein, we report a prototype of a robust, dense, and reconfigurable physical unclonable function primitives based on the three-dimensional passive metal-oxide memristive crossbar circuits, by making positive use of process-induced variations in the devices' nonlinear I-Vs and their analog tuning. We first characterize security metrics for a basic building block of the security primitives based on a two layer stack with monolithically integrated 10x10 250-nm half-pitch memristive crossbar circuits. The experimental results show that the average uniformity and diffusivity, measured on a random sample of 6,000 64-bit responses, out of ~697,000 total, is close to ideal 50% with 5% standard deviation for both metrics. The uniqueness, which was evaluated on a smaller sample by readjusting conductances of crosspoint devices within the same crossbar, is also close to the ideal 50% +/- 1%, while the smallest bit error rate, i.e. reciprocal of reliability, measured over 30-day window under +/-20% power supply variations, was ~ 1.5% +/- 1%. We then utilize multiple instances of the basic block to demonstrate physically unclonable functional primitive with 10-bit hidden challenge generation that encodes more than 10^19 challenge response pairs and has comparable uniformity, diffusiveness, and bit error rate.
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Submitted 23 November, 2016;
originally announced November 2016.
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Endurance Write Speed Tradeoffs in Nonvolatile Memories
Authors:
Dmitri Strukov
Abstract:
We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.
We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.
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Submitted 22 November, 2015;
originally announced November 2015.
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Three-Dimensional Stateful Material Implication Logic
Authors:
Gina C. Adam,
Brian D. Hoskins,
Mirko Prezioso,
Dmitri B. Strukov
Abstract:
Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration, including highly scalable metal-oxide resistive switching devices (memristors), yet integration of logic circuits proves to be much more challenging. Here we demonstrat…
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Monolithic three-dimensional integration of memory and logic circuits could dramatically improve performance and energy efficiency of computing systems. Some conventional and emerging memories are suitable for vertical integration, including highly scalable metal-oxide resistive switching devices (memristors), yet integration of logic circuits proves to be much more challenging. Here we demonstrate memory and logic functionality in a monolithic three-dimensional circuit by adapting recently proposed memristor-based stateful material implication logic. Though such logic has been already implemented with a variety of memory devices, prohibitively large device variability in the most prospective memristor-based circuits has limited experimental demonstrations to simple gates and just a few cycles of operations. By developing a low-temperature, low-variability fabrication process, and modifying the original circuit to increase its robustness to device imperfections, we experimentally show, for the first time, reliable multi-cycle multi-gate material implication logic operation within a three-dimensional stack of monolithically integrated memristors. The direct data manipulation in three dimensions enables extremely compact and high-throughput logic-in-memory computing and, remarkably, presents a viable solution for the Feynman grand challenge of implementing an 8-bit adder at the nanoscale.
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Submitted 9 September, 2015;
originally announced September 2015.
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Self-Adaptive Spike-Time-Dependent Plasticity of Metal-Oxide Memristors
Authors:
M. Prezioso,
F. Merrikh-Bayat,
B. Hoskins,
K. Likharev,
D. Strukov
Abstract:
Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cognitive tasks require spiking neuromorphic networks, which explicitly model individual neural pulses (spikes) in biological neural systems, it is crucia…
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Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cognitive tasks require spiking neuromorphic networks, which explicitly model individual neural pulses (spikes) in biological neural systems, it is crucial for memristive synapses to support the spike-time-dependent plasticity (STDP), which is believed to be the primary mechanism of Hebbian adaptation. A major challenge for the STDP implementation is that, in contrast to some simplistic models of the plasticity, the elementary change of a synaptic weight in an artificial hardware synapse depends not only on the pre-synaptic and post-synaptic signals, but also on the initial weight (memristor's conductance) value. Here we experimentally demonstrate, for the first time, STDP protocols that ensure self-adaptation of the average memristor conductance, making the plasticity stable, i.e. insensitive to the initial state of the devices. The experiments have been carried out with 200-nm Al2O3/TiO2-x memristors integrated into 12x12 crossbars. The experimentally observed self-adaptive STDP behavior has been complemented with numerical modeling of weight dynamics in a simple system with a leaky-integrate-and-fire neuron with a random spike-train input, using a compact model of memristor plasticity, fitted for quantitatively correct description of our memristors.
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Submitted 20 May, 2015;
originally announced May 2015.
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Redesigning Commercial Floating-Gate Memory for Analog Computing Applications
Authors:
F. Merrikh Bayat,
X. Guo,
H. A. Ommani,
N. Do,
K. K. Likharev,
D. B. Strukov
Abstract:
We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this area is approximately twice the original cell size, it is still at least an order of magnitude smaller than in the state-of-the-art analog circuit implementations.…
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We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this area is approximately twice the original cell size, it is still at least an order of magnitude smaller than in the state-of-the-art analog circuit implementations. The new memory cell arrays have been successfully tested, in particular confirming that each cell may be automatically tuned, with ~1% precision, to any desired subthreshold readout current value within an almost three-orders-of-magnitude dynamic range, even using an unoptimized tuning algorithm. Preliminary results for a four-quadrant vector-by-matrix multiplier, implemented with the modified memory array gate-coupled with additional peripheral floating-gate transistors, show highly linear transfer characteristics over a broad range of input currents.
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Submitted 15 October, 2014;
originally announced October 2014.
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Phenomenological Modeling of Memristive Devices
Authors:
Farnood Merrikh-Bayat,
Brian Hoskins,
Dmitri B. Strukov
Abstract:
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing electrical stresses, which is often the most critical range of operation for circuit modeling. While the choice of fitting functions is motivated by the switch…
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We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing electrical stresses, which is often the most critical range of operation for circuit modeling. While the choice of fitting functions is motivated by the switching and conduction mechanisms of particular titanium dioxide devices, the proposed modeling methodology is general enough to be applied to different types of memory devices which feature smooth non-abrupt resistance switching.
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Submitted 26 December, 2014; v1 submitted 16 June, 2014;
originally announced June 2014.
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Ionically-mediated electromechanical hysteresis in transition metal oxides
Authors:
Yunseok Kim,
Anna N. Morozovska,
Amit Kumar,
Stephen Jesse,
Eugene A. Eliseev,
Fabien Alibart,
Dmitri Strukov,
Sergei V. Kalinin
Abstract:
Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Ginsburg Landau Devonshire (GLD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction,…
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Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Ginsburg Landau Devonshire (GLD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically-induced ferroelectricity are identified. For the latter, the ionic contribution can change the sign of first order GLD expansion coefficient, rendering material effectively ferroelectric. These studies provide possible explanation for ferroelectric-like behavior in centrosymmetric transition metal oxides.
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Submitted 6 May, 2012; v1 submitted 23 December, 2011;
originally announced December 2011.
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High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm
Authors:
Fabien Alibart,
Ligang Gao,
Brian Hoskins,
Dmitri Strukov
Abstract:
Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to…
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Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to be sustained for nanoscale memristive devices because of the inherent filamentary nature of the resistive switching. The proposed functionality of memristive devices is especially attractive for analog computing with low precision data. As one representative example we demonstrate hybrid circuitry consisting of CMOS summing amplifier and two memristive devices to perform analog multiply and accumulate computation, which is a typical bottleneck operation in information processing.
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Submitted 6 October, 2011;
originally announced October 2011.
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Current-Controlled Negative Differential Resistance due to Joule Heating in TiO2
Authors:
A. S. Alexandrov,
A. M. Bratkovsky,
B. Bridle,
S. E. Savel'ev,
D. B. Strukov,
R. Stanley Williams
Abstract:
We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooling, and fitting this model to experimental data. This threshold switching is the 'soft breakdown' observed during electroforming of TiO2 and other tra…
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We show that Joule heating causes current-controlled negative differential resistance (CC-NDR) in TiO2 by constructing an analytical model of the voltage-current V(I) characteristic based on polaronic transport for Ohm's Law and Newton's Law of Cooling, and fitting this model to experimental data. This threshold switching is the 'soft breakdown' observed during electroforming of TiO2 and other transition-metal-oxide based memristors, as well as a precursor to 'ON' or 'SET' switching of unipolar memristors from their high to their low resistance states. The shape of the V(I) curve is a sensitive indicator of the nature of the polaronic conduction.
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Submitted 15 August, 2011;
originally announced August 2011.
