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Paraelectric KH$_2$PO$_4$ Nanocrystals in Monolithic Mesoporous Silica: Structure and Lattice Dynamics
Authors:
Yaroslav Shchur,
Andriy V. Kityk,
Viktor V. Strelchuk,
Andrii S. Nikolenko,
Nazariy A. Andrushchak,
Patrick Huber,
Anatolii S. Andrushchak
Abstract:
Combining dielectric crystals with mesoporous solids allows a versatile design of functional nanomaterials, where the porous host provides a mechanical rigid scaffold structure and the molecular filling adds the functionalization. Here, we report a study of the complex lattice dynamics of a SiO$_2$:KH$_2$PO$_4$ nanocomposite consisting of a monolithic, mesoporous silica glass host with KH$_2$PO…
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Combining dielectric crystals with mesoporous solids allows a versatile design of functional nanomaterials, where the porous host provides a mechanical rigid scaffold structure and the molecular filling adds the functionalization. Here, we report a study of the complex lattice dynamics of a SiO$_2$:KH$_2$PO$_4$ nanocomposite consisting of a monolithic, mesoporous silica glass host with KH$_2$PO$_4$ nanocrystals embedded in its tubular channels $\sim$12 nm across. A micro-Raman investigation performed in the spectral range of 70-1600 cm$^{-1}$ reveals the complex lattice dynamics of the confined crystals. Their Raman spectrum resembles the one taken from bulk KH$_2$PO$_4$ crystals and thus, along with X-ray diffraction experiments, corroborates the successful solution-based synthesis of KH$_2$PO$_4$ nanocrystals with a structure analogous to the bulk material. We succeeded in observing not only the high-frequency internal modes ($\sim$900-1200 cm$^{-1}$), typical of internal vibrations of the PO$_4$ tetrahedra, but, more importantly, also the lowest frequency modes typical of bulk KH$_2$PO$_4$ crystals. The experimental Raman spectrum was interpreted with a group theory analysis and first-principle lattice dynamics calculations. The analysis of calculated eigen-vectors indicates the involvement of hydrogen atoms in most phonon modes corroborating the substantial significance of the hydrogen subsystem in the lattice dynamics of paraelectric bulk and of KH$_2$PO$_4$ crystals in extreme spatial confinement. A marginal redistribution of relative Raman intensities of the confined compared to unconfined crystals presumably originates in slightly changed crystal fields and interatomic interactions, in particular for the parts of the nanocrystals in close proximity to the silica pore surfaces.
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Submitted 11 February, 2021;
originally announced February 2021.
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KH2PO4 + Host Matrix (Alumina / SiO$_2$) Nanocomposite: Raman Scattering Insight
Authors:
Ya. Shchur,
A. S. Andrushchak,
V. V. Strelchuk,
A. S. Nikolenko,
V. T. Adamiv,
N. A. Andrushchak,
P. Göring,
P. Huber,
A. V. Kityk
Abstract:
We report on the synthesis and Raman scattering characterization of composite materials based on the hostnanoporous matrices filled with nanostructured KH2PO4 (KDP) crystal. Silica (SiO2) and anodized aluminium oxide (AAO) were used as host matrices with various pore diameters, inter-pore spacing and morphology. The structure of the nanocomposites was investigated by X-ray diffraction and scanning…
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We report on the synthesis and Raman scattering characterization of composite materials based on the hostnanoporous matrices filled with nanostructured KH2PO4 (KDP) crystal. Silica (SiO2) and anodized aluminium oxide (AAO) were used as host matrices with various pore diameters, inter-pore spacing and morphology. The structure of the nanocomposites was investigated by X-ray diffraction and scanning electron microscopy. Raman scattering reveals the creation of one-dimensional nanostructured KDP inside the SiO2 matrix. We clearly observed the stretching ν1, ν3 and bending ν2 vibrations of PO4 tetrahedral groups in the Raman spectrum of SiO2 + KDP. In Raman scattering spectra of AAO + KDP nanocomposite, the broad fluorescence background of AAO matrix dominates to a great extent, hindering thus the detecting of the KDP compound spectral response.
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Submitted 19 February, 2020;
originally announced February 2020.
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Nature of resonant Raman scattering in ZnCoO films under sub-band excitation
Authors:
K. A. Avramenko,
V. P. Bryksa,
V. V. Strelchuk,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ conc…
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Using the methods of scanning electron (SEM) and atom force microscopy (AFM) as well as photoluminescence (PL) and Raman micro-spectroscopy, we investigated $Zn_{1-x}Co_xO$ films ($x=5$ and $15\%$) grown by molecular beam epitaxy on sapphire substrates. It is found that the films have a nanocrystalline structure with the grain size decreased from $\sim150$ down to $28$ nm at changing the $Co$ concentration from $5$ to $15\%$. High-resolution SEM images of $Zn_{0.85}Co_{0.15}O$ film have been interpreted as inhomogeneous lateral distribution of $Co$ atoms. Two broad emission bands observed in spectra of band-to-band PL are ascribed to emission from $Zn_{1-x}Co_xO$ nano-regions enriched and depleted with $Co$. In low-temperature PL spectra under sub-band excitation of $Zn_{1-x}Co_xO$ films, there observed are intra-center optical transitions due to $Co^{2+}$ center: $^2E(G)$, $^2A_1(G)$, $^2T_1(G)$, $^4T_1(P)$, $^2T_2(G)$ $\longrightarrow$ $^4A_2(F)$. Offered is a new approach to interpretation of resonant enhancement observed in multi-phonon scattering by $LO$ phonons in $Zn_{1-x}Co_xO$ under sub-bandgap excitation combined with the extrinsic Fröhlich interaction mediated via a localized exciton bound to the isoelectronic impurity in which the electron is strongly localized at the magnetic $Co^{2+}$ ion. This conclusion is confirmed by the dependence of Raman spectra on the quantum energy of exciting radiation. It assumes formation of intermediated sub-band electron excited states of isoelectron $Co$ dopant, they are also referred to as charge transfer processes.
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Submitted 7 September, 2011;
originally announced September 2011.
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Ferromagnetism in Co-doped ZnO films grown by molecular beam epitaxy: magnetic, electrical and microstructural studies
Authors:
V. V. Strelchuk,
K. A. Avramenko,
V. P. Bryksa,
P. M. Lytvyn,
M. Ya. Valakh,
V. O. Pashchenko,
O. M. Bludov,
C. Deparis,
C. Morhain,
P. Tronc
Abstract:
We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. T…
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We studied structural, optical and magnetic properties of high-quality 5 and 15% Co-doped ZnO films grown by plasma-assisted molecular beam epitaxy (MBE) on (0001)-sapphire substrates. Magnetic force microscopy (MFM) and magnetic measurements with SQUID magnetometer show clear ferromagnetic behavior of the films up to room temperature whereas they are antiferromagnetic below 200 K approximately. Temperature dependence of the carrier mobility was determined using Raman line shape analysis of the longitudinal-optical-phonon-plasmon coupled modes. It shows that the microscopic mechanism for ferromagnetic ordering is coupling mediated by free electrons between spins of Co atoms. These results bring insight into a subtle interplay between charge carriers and magnetism in MBE-grown Zn(1-x)CoxO films.
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Submitted 23 March, 2011;
originally announced March 2011.
