-
Reduced leakage current in BiFeO3 thin films with rectifying contacts
Abstract: BiFeO3 thin films were grown on Pt/c-sapphire substrates by pulsed laser deposition with different growth rates. With increasing growth rate the leakage current is decreased and the conduction mechanism changes from bulk-limited Poole-Frenkel emission to interface-limited Schottky emission. In the present work, we show that only the growth rate of the BiFeO3 films close to the metal contacts has t… ▽ More
Submitted 19 May, 2011; originally announced May 2011.
Comments: 15 pages, 4 figures, accepted by Appl. Phys. Lett
Journal ref: Appl. Phys. Lett. 98, 232901 (2011)