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Direct measurement of 2DEG states in shallow Si:Sb $δ$-layers
Authors:
Frode S. Strand,
Simon P. Cooil,
Quinn T. Campbell,
John J. Flounders,
Håkon I. Røst,
Anna Cecilie Åsland,
Alv Johan Skarpeid,
Marte P. Stalsberg,
Jinbang Hu,
Johannes Bakkelund,
Victoria Bjelland,
Alexei B. Preobrajenski,
Zheshen Li,
Marco Bianchi,
Jill A. Miwa,
Justin W. Wells
Abstract:
We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle…
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We investigate the electronic structure of high-density layers of Sb dopants in a silicon host, so-called Si:Sb $δ$-layers. We show that, in spite of the known challenges in producing highly confined Sb $δ$-layers, sufficient confinement is created such that the lowest conduction band states ($Γ$ states, studied in depth in other silicon $δ$-layers), become occupied and can be observed using angle-resolved photoemission spectroscopy. The electronic structure of the Si:Sb $δ$-layers closely resembles that of Si:P systems, where the observed conduction band is near-parabolic and slightly anisotropic in the $\mathbf{k}_\parallel$ plane. The observed $Γ$ state extends ~ 1 nm in the out-of-plane direction, which is slightly wider than the 1/3 monolayer thick dopant distribution. This is caused by a small segregation of the dopant layer, which is nevertheless minimal when comparing with earlier published attempts. Our results serve to demonstrate that Sb is still a feasible dopant alternative for use in the semiconductor $δ$-layer platform, providing similar electronic functionality to Si:P systems. Additionally, it has the advantages of being less expensive, more controllable, safer to handle, and more compatible with industrial patterning techniques. Si:Sb is therefore a viable platform for emerging quantum device applications.
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Submitted 22 October, 2024;
originally announced October 2024.
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Probing the Atomic Arrangement of Sub-Surface Dopants in a Silicon Quantum Device Platform
Authors:
Håkon I. Røst,
Ezequiel Tosi,
Frode S. Strand,
Anna Cecilie Åsland,
Paolo Lacovig,
Silvano Lizzit,
Justin W. Wells
Abstract:
High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in sub-surface Si:P…
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High-density structures of sub-surface phosphorus dopants in silicon continue to garner interest as a silicon-based quantum computer platform, however, a much-needed confirmation of their dopant arrangement has been lacking. In this work, we take advantage of the chemical specificity of X-ray photoelectron diffraction to obtain the precise structural configuration of P dopants in sub-surface Si:P $δ$-layers. The growth of $δ$-layer systems with different levels of doping is carefully studied and verified using X-ray photoelectron spectroscopy and low-energy electron diffraction. Subsequent XPD measurements reveal that in all cases, the dopants primarily substitute with Si atoms from the host material. Furthermore, no signs of free carrier-inhibiting P$-$P dimerization can be observed. Our observations not only settle a nearly decade-long debate about the dopant arrangement but also demonstrate that XPD is well suited to study sub-surface dopant structures. This work thus provides valuable input for an updated understanding of the behavior of Si:P $δ$-layers and the modeling of their derived quantum devices.
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Submitted 18 November, 2022;
originally announced November 2022.
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Low Temperature Growth of Graphene on Semiconductor
Authors:
Håkon I. Røst,
Rajesh K. Chellappan,
Frode S. Strand,
Antonija Grubišić-Čabo,
Benjamen P. Reed,
Mauricio J. Prieto,
Liviu C. Tǎnase,
Lucas de Souza Caldas,
Thipusa Wongpinij,
Chanan Euaruksakul,
Thomas Schmidt,
Anton Tadich,
Bruce C. C. Cowie,
Zheshen Li,
Simon P. Cooil,
Justin W. Wells
Abstract:
The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical r…
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The industrial realization of graphene has so far been limited by challenges related to the quality, reproducibility, and high process temperatures required to manufacture graphene on suitable substrates. We demonstrate that epitaxial graphene can be grown on transition metal treated 6H-SiC(0001) surfaces, with an onset of graphitization starting around $450-500^\circ\text{C}$. From the chemical reaction between SiC and thin films of Fe or Ru, $\text{sp}^{3}$ carbon is liberated from the SiC crystal and converted to $\text{sp}^{2}$ carbon at the surface. The quality of the graphene is demonstrated using angle-resolved photoemission spectroscopy and low-energy electron diffraction. Furthermore, the orientation and placement of the graphene layers relative to the SiC substrate is verified using angle-resolved absorption spectroscopy and energy-dependent photoelectron spectroscopy, respectively. With subsequent thermal treatments to higher temperatures, a steerable diffusion of the metal layers into the bulk SiC is achieved. The result is graphene supported on magnetic silicide or optionally, directly on semiconductor, at temperatures ideal for further large-scale processing into graphene based device structures.
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Submitted 27 November, 2020;
originally announced November 2020.
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Observation and origin of the $Δ$-manifold in Si:P $δ$-layers
Authors:
Ann Julie Holt,
Sanjoy K. Mahatha,
Raluca-Maria Stan,
Frode S. Strand,
Thomas Nyborg,
Davide Curcio,
Alex Schenk,
Simon P. Cooil,
Marco Bianchi,
Justin W. Wells,
Philip Hofmann,
Jill A. Miwa
Abstract:
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experi…
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By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0$\,nm to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $Δ$-manifold is revealed. Moreover, the number of carriers hosted within the $Δ$-manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.
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Submitted 19 November, 2019;
originally announced November 2019.
