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Fabrication and transfer print based integration of free-standing GaN membrane micro-lenses onto semiconductor chips
Authors:
Nils Kolja Wessling,
Saptarsi Ghosh,
Benoit Guilhabert,
Menno Kappers,
Miles Toon,
Rachel A. Oliver,
Martin D. Dawson,
Michael J. Strain
Abstract:
We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers w…
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We demonstrate the back-end integration of broadband, high-NA GaN micro-lenses by micro-assembly onto non-native semiconductor substrates. We developed a highly parallel micro-fabrication process flow to suspend micron scale plano-convex lens platelets from 6" Si growth wafers and show their subsequent transfer-printing integration. A growth process targeted at producing unbowed epitaxial wafers was combined with optimisation of the etching volume in order to produce flat devices for printing. Lens structures were fabricated with 6 to 11 $μ$m diameter, 2 $μ$m height and root-mean-squared surface roughness below 2 nm. The lenses were printed in a vertically coupled geometry on a single crystalline diamond substrate and with $μ$m-precise placement on a horizontally coupled photonic integrated circuit waveguide facet. Optical performance analysis shows that these lenses could be used to couple to diamond nitrogen vacancy centres at micron scale depths and demonstrates their potential for visible to infrared light-coupling applications.
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Submitted 19 September, 2022; v1 submitted 10 August, 2022;
originally announced August 2022.
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Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems
Authors:
Dimitars Jevtics,
John McPhillimy,
Benoit Guilhabert,
Juan A. Alanis,
Hark Hoe Tan,
Chennupati Jagadish,
Martin D. Dawson,
Antonio Hurtado,
Patrick Parkinson,
Michael J. Strain
Abstract:
Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complement…
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Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication.
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Submitted 7 January, 2020;
originally announced January 2020.
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Three-dimensional solid-state qubit arrays with long-lived spin coherence
Authors:
C. J. Stephen,
B. L. Green,
Y. N. D. Lekhai,
L. Weng,
P. Hill,
S. Johnson,
A. C. Frangeskou,
P. L. Diggle,
M. J. Strain,
E. Gu,
M. E. Newton,
J. M. Smith,
P. S. Salter,
G. W. Morley
Abstract:
Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This woul…
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Three-dimensional arrays of silicon transistors increase the density of bits. Solid-state qubits are much larger so could benefit even more from using the third dimension given that useful fault-tolerant quantum computing will require at least 100,000 physical qubits and perhaps one billion. Here we use laser writing to create 3D arrays of nitrogen-vacancy centre (NVC) qubits in diamond. This would allow 5 million qubits inside a commercially available 4.5x4.5x0.5 mm diamond based on five nuclear qubits per NVC and allowing $(10 μm)^3$ per NVC to leave room for our laser-written electrical control. The spin coherence times we measure are an order of magnitude longer than previous laser-written qubits and at least as long as non-laser-written NVC. As well as NVC quantum computing, quantum communication and nanoscale sensing could benefit from the same platform. Our approach could also be extended to other qubits in diamond and silicon carbide.
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Submitted 10 July, 2018;
originally announced July 2018.
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A micrometer-scale integrated silicon source of time-energy entangled photons
Authors:
Davide Grassani,
Stefano Azzini,
Marco Liscidini,
Matteo Galli,
Michael J. Strain,
Marc Sorel,
J. E. Sipe,
Daniele Bajoni
Abstract:
Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip but the sources demonstrated so far require millimeter lengths and pump powers of the order of hundreds of mWs to produce an appreciable photon flux, hindering their scalability and dense integration.
Microring resonators have be…
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Entanglement is a fundamental resource in quantum information processing. Several studies have explored the integration of sources of entangled states on a silicon chip but the sources demonstrated so far require millimeter lengths and pump powers of the order of hundreds of mWs to produce an appreciable photon flux, hindering their scalability and dense integration.
Microring resonators have been shown to be efficient sources of photon pairs, but entangled state emission has never been demonstrated. Here we report the first demonstration of a microring resonator capable of emitting time-energy entangled photons. We use a Franson experiment to show a violation of Bell's inequality by as much as 11 standard deviations. The source is integrated on a silicon chip, operates at sub-mW pump power, emits in the telecom band with a pair generation rate exceeding 10$^7$ Hz per $nm$, and outputs into a photonic waveguide. These are all essential features of an entangled states emitter for a quantum photonic networks.
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Submitted 17 September, 2014;
originally announced September 2014.
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Ultra-low power generation of twin photons in a compact silicon ring resonator
Authors:
Stefano Azzini,
Davide Grassani,
Michael J. Strain,
Marc Sorel,
L. G. Helt,
J. E. Sipe,
Marco Liscidini,
Matteo Galli,
Daniele Bajoni
Abstract:
We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 μm radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 μW continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in g…
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We demonstrate efficient generation of correlated photon pairs by spontaneous four wave mixing in a 5 μm radius silicon ring resonator in the telecom band around 1550 nm. By optically pumping our device with a 200 μW continuous wave laser, we obtain a pair generation rate of 0.2 MHz and demonstrate photon time correlations with a coincidence-to-accidental ratio as high as 250. The results are in good agreement with theoretical predictions and show the potential of silicon micro-ring resonators as room temperature sources for integrated quantum optics applications.
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Submitted 10 September, 2012;
originally announced September 2012.
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From Classical Four-Wave Mixing to Parametric Fluorescence in Silicon micro-ring resonators
Authors:
Stefano Azzini,
Davide Grassani,
Matteo Galli,
Lucio Claudio Andreani,
Marc Sorel,
Michael J. Strain,
L. G. Helt,
J. E. Sipe,
Marco Liscidini,
Daniele Bajoni
Abstract:
Four-wave mixing can be stimulated or occur spontaneously. The first process is intrinsically much stronger, and well understood through classical nonlinear optics. The latter, also known as parametric fluorescence, can be explained only in the framework of a quantum theory of light. We experimentally demonstrate that, in a micro-ring resonator, there exists a simple relation between the efficienc…
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Four-wave mixing can be stimulated or occur spontaneously. The first process is intrinsically much stronger, and well understood through classical nonlinear optics. The latter, also known as parametric fluorescence, can be explained only in the framework of a quantum theory of light. We experimentally demonstrate that, in a micro-ring resonator, there exists a simple relation between the efficiencies of these two processes, which is independent of the nonlinearity and size of the ring. In particular we show that the average power generated by parametric fluorescence can be immediately estimated from a classical FWM experiment. These results suggest that classical nonlinear characterization of a photonic integrated structure can provide accurate information on its nonlinear quantum properties.
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Submitted 3 August, 2012;
originally announced August 2012.
