-
Signatures of hydrodynamic flow of topological carriers in SnTe multi-terminal nanowires
Authors:
Dawid Śnieżek,
Cezary Śliwa,
Krzysztof Dybko,
Jarosław Wróbel,
Piotr Dziawa,
Tomasz Wojtowicz,
Tomasz Story,
Jerzy Wróbel
Abstract:
In this work, we used 20 nm thick CdTe/SnTe/CdTe [001] quantum wells to make 6- and 8-terminal nano-structures with the etched cross-junctions of sub-micron width with walls directed along the [10], [01], and [11] surface crystallographic directions. We studied the low-temperature quantum magneto-transport to investigate the impact of lateral confinement on the states of topological carriers. Calc…
▽ More
In this work, we used 20 nm thick CdTe/SnTe/CdTe [001] quantum wells to make 6- and 8-terminal nano-structures with the etched cross-junctions of sub-micron width with walls directed along the [10], [01], and [11] surface crystallographic directions. We studied the low-temperature quantum magneto-transport to investigate the impact of lateral confinement on the states of topological carriers. Calculations showed that for narrow SnTe channels, almost flat bands with small energy dispersion are formed, and in the case of the [11] direction, the dispersionless states are strongly localized at the mesa edges. The measurements indicated that a current path associated with trivial states inside the quantum well was considerably narrowed due to disorder, leading to a significant reduction in channel conductivity. Such a high-resistance cross-junction has been used for measurements of non-linear transport in non-local configurations. The dependence of the differential resistance $R_\text{d}$ on the direct current $I_\text{DC}$ flowing through a selected pair of contacts was studied. For temperatures $T<1$ K, first an increase and then a decrease followed by a minimum of $R_\text{d}$ were observed. This is a characteristic $R_\text{d}(I_\text{DC})$ relationship that is often considered as the signature of the hydrodynamic flow of a fermionic liquid in narrow quantum channels, which in the case of SnTe can be formed by topological states located entirely at the inner edges of a planar cross-junction.
△ Less
Submitted 10 March, 2025;
originally announced March 2025.
-
Bi, Cr and Ag dopants in PbTe and SnTe: impact of the host band symmetry on doping properties by ab initio calculations
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Doping properties of Bi, Cr and Ag dopants in thermoelectric and topological materials PbTe and SnTe are analyzed based on density functional theory calculations in the local density approximations and the large supercell method. In agreement with experiment, in both PbTe and SnTe, Bi is a donor and Ag is an acceptor with a vanishing magnetic moment. In contrast, Cr is a resonant donor in PbTe, an…
▽ More
Doping properties of Bi, Cr and Ag dopants in thermoelectric and topological materials PbTe and SnTe are analyzed based on density functional theory calculations in the local density approximations and the large supercell method. In agreement with experiment, in both PbTe and SnTe, Bi is a donor and Ag is an acceptor with a vanishing magnetic moment. In contrast, Cr is a resonant donor in PbTe, and an resonant acceptor in SnTe. We also consider the electronic structure of cation vacancies in PbTe and SnTe, since these abundant native defects induce $p$-type conductivity in both hosts. The quantitatively different impact of these dopants/defects on the host band structure of PbTe and SnTe (level energies, band splittings, band inversion, and a different level of hybridization between dopant and host states) is explained based on the group-theoretical arguments.
△ Less
Submitted 19 December, 2024;
originally announced December 2024.
-
Probing chiral symmetry with a topological domain wall sensor
Authors:
Glenn Wagner,
Titus Neupert,
Ronny Thomale,
Andrzej Szczerbakow,
Jedrzej Korczak,
Tomasz Story,
Matthias Bode,
Artem Odobesko
Abstract:
Chiral symmetry is a fundamental property with profound implications for the properties of elementary particles, that implies a spectral symmetry (i.e. E => -E ) in their dispersion relation. In condensed matter physics, chiral symmetry is frequently associated with superconductors or materials hosting Dirac fermions such as graphene or topological insulators. There, chiral symmetry is an emergent…
▽ More
Chiral symmetry is a fundamental property with profound implications for the properties of elementary particles, that implies a spectral symmetry (i.e. E => -E ) in their dispersion relation. In condensed matter physics, chiral symmetry is frequently associated with superconductors or materials hosting Dirac fermions such as graphene or topological insulators. There, chiral symmetry is an emergent low-energy property, accompanied by an emergent spectral symmetry. While the chiral symmetry can be broken by crystal distortion or external perturbations, the spectral symmetry frequently survives. As the presence of spectral symmetry does not necessarily imply chiral symmetry, the question arises how these two properties can be experimentally differentiated. Here, we demonstrate how a system with preserved spectral symmetry can reveal underlying broken chiral symmetry using topological defects. Our study shows that these defects induce a spectral imbalance in the Landau level spectrum, providing direct evidence of symmetry alteration at topological domain walls. Using high-resolution STM/STS we demonstrate the intricate interplay between chiral and translational symmetry which is broken at step edges in topological crystalline insulator Pb$_{1-x}$Sn$_x$Se. The chiral symmetry breaking leads to a shift in the guiding center coordinates of the Landau orbitals near the step edge, thus resulting in a distinct chiral flow of the spectral density of Landau levels. This study underscores the pivotal role of topological defects as sensitive probes for detecting hidden symmetries, offering profound insights into emergent phenomena with implications for fundamental physics.
△ Less
Submitted 29 October, 2024;
originally announced October 2024.
-
Pentagonal nanowires from topological crystalline insulators: a platform for intrinsic core-shell nanowires and higher-order topology
Authors:
Ghulam Hussain,
Giuseppe Cuono,
Piotr Dziawa,
Dorota Janaszko,
Janusz Sadowski,
Slawomir Kret,
Boguslawa Kurowska,
Jakub Polaczynski,
Kinga Warda,
Shahid Sattar,
Carlo M. Canali,
Alexander Lau,
Wojciech Brzezicki,
Tomasz Story,
Carmine Autieri
Abstract:
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, w…
▽ More
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in three different structural phases: cubic, pentagonal with [001] orientation and pentagonal with [110] orientation. Within a semiclassical approach, we show that the interplay between ionic and covalent bonds favors the formation of pentagonal NWs. Additionally, we find that this pentagonal structure is more likely to occur in tellurides than in selenides. The disclination and twin boundary cause the electronic states originating from the NW core region to generate a conducting band connecting the valence and conduction bands, creating a symmetry-enforced metallic phase. The metallic core band has opposite slopes in the cases of Sn and Te twin boundary, while the bands from the shell are insulating. We finally study the electronic and topological properties of pentagonal NWs unveiling their potential as a new platform for higher-order topology and fractional charge. These pentagonal NWs represent a unique case of intrinsic core-shell one-dimensional nanostructures with distinct structural, electronic and topological properties between the core and the shell region.
△ Less
Submitted 17 May, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
-
Reconstruction, rumpling, and Dirac states at the (001) surface of a topological crystalline insulator Pb1-xSnxSe
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the…
▽ More
Equilibrium atomic configuration and electronic structure of the (001) surface of IV-VI semiconductors PbTe, PbSe, SnTe and SnSe, is studied using the density functional theory (DFT) methods. At surfaces of all those compounds, the displacements of ions from their perfect lattice sites reveal two features characteristic of the rock salt crystals. First, the ionic displacements occur only along the direction perpendicular to the surface, and they exhibit the rumpling effect, i.e., the vertical shifts of cations and anions differ. Second, the interlayer spacing of the first few monolayers at the surface oscillates. Our results are in good agreement with the previous X-ray experimental data and theoretical results where available. They also are consistent with the presence of two {110} mirror planes at the (001) surface of the rock salt. One the other hand, experiments preformed for the topological Pb$_{1-x}$Sn$_x$ Se alloy indicate breaking of the mirror symmetry due to a large 0.3 Å relative displacement of the cation and anion sublattices at the surface, which induces the opening of the gap of the Dirac cones. Our results for Pb$_{1-x}$Sn$_x$Se including the simulated STM images, are in contradiction with these findings, since surface reconstructions with broken symmetry are never the ground state configurations. The impact of the theoretically determined surface configurations and of the chemical disorder on the surface states is analyzed.
△ Less
Submitted 1 August, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
-
Thermoelectric PbTe-CdTe bulk nanocomposite
Authors:
M. Szot,
K. Dybko,
A. Mycielski,
A. Reszka,
R. Minikayev,
P. Dziawa,
T. Story
Abstract:
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantage of the extremely low mutual solubility of both semiconductors, resulting from their different crystal structure, and is based on a specifically desi…
▽ More
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantage of the extremely low mutual solubility of both semiconductors, resulting from their different crystal structure, and is based on a specifically designed Bridgman growth procedure. It is shown that the formation of zinc-blende crystalline CdTe grains in the rock-salt matrix of thermoelectric PbTe can be forced during the synthesis of a composite by introducing Cd in the form of CdTe compound and choosing the growth temperature above the melting point of PbTe but below the melting point of CdTe. X-ray diffraction and SEM-EDX spectroscopy analyzes as well as basic electric and thermoelectric characterization of the nanocomposite samples containing 2, 5 and 10 at. \% of Cd showed that using proposed growth procedure, it is possible to obtain both n-type (Bi- or I-doped) and p-type (Na-doped) material with carrier concentration of 1÷5 x 10\^{19} cm\^{-3} and uniformly distributed CdTe grains with a diameter of the order of 100 nm.
△ Less
Submitted 15 June, 2023; v1 submitted 30 December, 2022;
originally announced December 2022.
-
Interaction effects in a 1D flat band at a topological crystalline step edge
Authors:
Glenn Wagner,
Souvik Das,
Johannes Jung,
Artem Odobesko,
Felix Küster,
Florian Keller,
Jedrzej Korczak,
Andrzej Szczerbakow,
Tomasz Story,
Stuart Parkin,
Ronny Thomale,
Titus Neupert,
Matthias Bode,
Paolo Sessi
Abstract:
Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy we investigate the behaviour of such edge channels in Pb$_{1-x}$Sn$_{x}$Se under d…
▽ More
Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy we investigate the behaviour of such edge channels in Pb$_{1-x}$Sn$_{x}$Se under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap. The experimental results are rationalized in terms of interaction effects which are enhanced since the electronic density is collapsed to a one-dimensional channel. This constitutes a unique system to study how topology and many-body electronic effects intertwine, which we model theoretically through a Hartree-Fock analysis.
△ Less
Submitted 14 September, 2022;
originally announced September 2022.
-
A Systematic Investigation of the Coupling between One-Dimensional Edge States of a Topological Crystalline Insulator
Authors:
Johannes Jung,
Artem Odobesko,
Robin Boshuis,
Andrzej Szczerbakow,
Tomasz Story,
Matthias Bode1
Abstract:
The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator $Pb_{0.7}Sn_{0.3}Se(001)$ has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a step{to{step distance $d_{ss} < 25$ nm, resulting in a characteristic splittin…
▽ More
The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator $Pb_{0.7}Sn_{0.3}Se(001)$ has been studied systematically by scanning tunneling spectroscopy. Our results reveal that the coupling of adjacent edge modes sets in at a step{to{step distance $d_{ss} < 25$ nm, resulting in a characteristic splitting of a single peak at the Dirac point in tunneling spectra. Whereas the energy splitting exponentially increases with decreasing $d_{ss}$ for single-atomic steps running almost parallel, we find no splitting for single-atomic step edges under an angle of $90^{o}$. The results are discussed in terms of overlapping wave functions with $p_x; p_y$ orbital character.
△ Less
Submitted 17 May, 2021;
originally announced May 2021.
-
Magnetic Constitution of Topologically Trivial Thermoelectric PbTe:Cr
Authors:
Katarzyna Gas,
Aleksandra Krolicka,
Krzysztof Dybko,
Piotr Nowicki,
Zeinab Khosravizadeh,
Tomasz Story,
Maciej Sawicki
Abstract:
In this paper we report on detailed temperature and magnetic field dependence of m agnetization of IV-VI semiconductor PbTe doped with mixed valence transition metal Cr$^{2+/3+}$. The material is studied solely by an integral superconducting quantum interference device magnetometer in order to quantitatively determine the contribution of single substitutional Cr$^{3+}$ as well as of various Cr-Te…
▽ More
In this paper we report on detailed temperature and magnetic field dependence of m agnetization of IV-VI semiconductor PbTe doped with mixed valence transition metal Cr$^{2+/3+}$. The material is studied solely by an integral superconducting quantum interference device magnetometer in order to quantitatively determine the contribution of single substitutional Cr$^{3+}$ as well as of various Cr-Te magnetic nanocrystals, including their identification. The applied experimental procedure reveals the presence of about $10^{19}$~cm$^{-3}$ paramagnetic Cr$^{3+}$ ions formed via self-ionization of Cr$^{2+}$ resonant donors. These are known to improve the thermoelectric figure of merit parameter zT of this semiconductor. The magnetic finding excellently agrees with previous Hall effect studies thus providing a new experimental support for the proposed electronic structure model of PbTe:Cr system with resonant Cr$^{2+/3+}$ state located (at low temperatures) about 100 meV above the bottom of the conduction band. Below room temperature a ferromagnetic-like signal points to the presence of Cr-rich nanocrystalline precipitates. Two most likely candidates, namely: Cr$_2$Te$_3$ and Cr$_5$Te$_8$ are identified upon dedicated temperature cycling of the sample at the remnant state. As an ensemble, the nanocrystals exhibits (blocked) superparamagnetic properties. The magnetic susceptibility of both n- and p-type PbTe in the temperature range $100 < T < 400$~K has been established. These magnitudes are essential in proper accounting for the high temperature magnetic susceptibility of PbTe:Cr.
△ Less
Submitted 2 June, 2021; v1 submitted 14 January, 2021;
originally announced January 2021.
-
Band structure and topological phases of Pb$_{1-x-y}$Sn$_x$Mn$_y$Te by ab initio calculations
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin v…
▽ More
The change in the composition of Pb$_{1-x}$Sn$_x$Te IV-VI semiconductor or in its lattice parameter can drive a transition from the topologically trivial to the topological crystalline insulator (TCI), crossing a region where the alloy is in the Weyl semimetal phase. Incorporation of the magnetic Mn ions induces strong perturbations of the electronic structure, which act on both orbital and spin variables. Our first principles calculations show that the presence of Mn shifts the TCI and the Weyl region towards higher Sn contents in Pb$_{1-x}$Sn$_x$Te. When the Mn spin polarization is finite, the spin perturbation, like the orbital part, induces changes in band energies comparable to the band gap, which widens the Weyl area. The effect opens a possibility of driving transitions between various topological phases of the system by magnetic field or by the spontaneous Mn magnetization. We also propose a new method to calculate topological indices for systems with a finite spin polarization defined based on the concept of the Chern number. These valid topological characteristics enable an identification of the three distinct topological phases of the Pb$_{1-x-y}$Sn$_x$Mn$_y$Te alloy.
△ Less
Submitted 2 October, 2020;
originally announced October 2020.
-
Electron-phonon coupling and a resonant-like optical observation of a band inversion in topological crystalline insulator Pb$_{1-x}$Sn$_x$Se
Authors:
Mariusz Woźny,
Wojciech Szuszkiewicz,
Mateusz Dyksik,
Marcin Motyka,
Andrzej Szczerbakow,
Witold Bardyszewski,
Tomasz Story,
Józef Cebulski
Abstract:
The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb$_{0.75}$Sn$_{0.25}$Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-p…
▽ More
The optical reflectivity of Pb$_{0.865}$Sn$_{0.135}$Se and Pb$_{0.75}$Sn$_{0.25}$Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb$_{0.75}$Sn$_{0.25}$Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-phonon coupling resulting in resonant changes of LO phonon frequency for energy gap equal to zero or to LO phonon energy. This effect is absent for Pb$_{0.865}$Sn$_{0.135}$Se that exhibits an open energy gap with trivial band ordering at all temperatures. These results show that reflectivity in the THz range constitute a versatile experimental method for precise determination of band inversion in narrow-gap topological materials. For Pb$_{0.75}$Sn$_{0.25}$Se the transition from trivial insulator to topological crystalline insulator phase takes place at temperature T$_0$ = (172 $\pm$ 2) K.
△ Less
Submitted 26 March, 2020;
originally announced March 2020.
-
Two-valence band electron and heat transport in monocrystalline PbTe-CdTe solid solutions with high Cd content
Authors:
M. Szot,
P. Pfeffer,
K. Dybko,
A. Szczerbakow,
L. Kowalczyk,
P. Dziawa,
R. Minikayev,
T. Zayarnyuk,
K. Piotrowski,
M. U. Gutowska,
A. Szewczyk,
T. Story,
W. Zawadzki
Abstract:
High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy gap as a function of Cd content. The Hall mobility, thermoelectric power, thermal conductivity and thermoelectric figure of merit parameter $ZT$ are in…
▽ More
High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy gap as a function of Cd content. The Hall mobility, thermoelectric power, thermal conductivity and thermoelectric figure of merit parameter $ZT$ are investigated experimentally and theoretically paying particular attention to the two-valence band structure of the material. It is shown that the heavy-hole band near the $Σ$ point of the Brillouin zone plays an important role and is responsible for the Pb$_{1-x}$Cd$_x$Te hole transport at higher Cd-content. Our data and their description can serve as the standard for Pb$_{1-x}$Cd$_x$Te single crystals with $x$ up to 0.1. It is shown, that monocrystalline Pb$_{1-x}$Cd$_x$Te samples with relatively low Cd content of about 1 at.\% and hole concentration of the order of 10$^{20}$ cm$^{-3}$ may exhibit $ZT \approx$ 1.4 at 600 K.
△ Less
Submitted 13 November, 2019;
originally announced November 2019.
-
Defect-free SnTe topological crystalline insulator nanowires grown by molecular beam epitaxy on graphene
Authors:
J. Sadowski,
P. Dziawa,
A. Kaleta,
B. Kurowska,
A. Reszka,
T. Story,
S. Kret
Abstract:
SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investig…
▽ More
SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting of {100} crystal planes known to host metallic surface states with Dirac dispersion. Thorough high resolution transmission electron microscopy investigations show that the nanowires grow on graphene in the van der Walls epitaxy mode induced when the catalyzing Au nanoparticle mixes with Sn delivered from SnTe flux, providing liquid Au-Sn alloy. The nanowires are totally free from structural defects, but their {001} sidewalls are prone to oxidation, which points out on necessity of depositing protective capping in view of exploiting the magneto-electric transport phenomena involving charge carriers occupying topologically protected states.
△ Less
Submitted 20 December, 2018;
originally announced December 2018.
-
Probing spatial extent of topological surface states by weak antilocalization experiments
Authors:
K. Dybko,
G. P. Mazur,
W. Wolkanowicz,
M. Szot,
P. Dziawa,
J. Z. Domagala,
M. Wiater,
T. Wojtowicz,
G. Grabecki,
T. Story
Abstract:
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a mod…
▽ More
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a model developed by Tkachov and Hankiewicz, [Physical Review B 84, 035444]. Using this model the spatial decay of the topological states is obtained from measurements of quantum corrections to the conductivity in perpendicular and parallel configurations of the magnetic field. Within this model we find interaction between two topological boundaries which results in scaling of the spatial decay with the film thickness. We attribute this behavior to bulk reservoir which mediates interactions by scattering events without phase breaking of topological carriers.
△ Less
Submitted 20 December, 2018;
originally announced December 2018.
-
Alloy broadening of the transition to the non-trivial topological phase of Pb_{1-x}Sn_{x}Te
Authors:
A. Lusakowski,
P. Boguslawski,
T. Story
Abstract:
Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging o…
▽ More
Transition between the topologically trivial and non-trivial phase of Pb_{1-x}Sn_{x}Te alloy is driven by the increasing content $x$ of Sn, or by the hydrostatic pressure for $x<0.3$. We show that a sharp border between these two topologies exists in the Virtual Crystal Approximation only. In more realistic models, the Special Quasirandom Structure method and the supercell method (with averaging over various atomic configurations), the transitions are broadened. We find a surprisingly large interval of alloy composition, $0.3<x<0.6$, in which the energy gap is practically vanishing. A similar strong broadening is also obtained for transitions driven by hydrostatic pressure. Analysis of the band structure shows that the alloy broadening originates in splittings of the energy bands caused by the different chemical nature of Pb and Sn, and by the decreased crystal symmetry due to spatial disorder. Based on our results of ab initio and tight binding calculations for Pb_{1-x}Sn_{x}Te we discuss different criteria of discrimination between trivial and nontrivial topology of the band structure of alloys.
△ Less
Submitted 17 July, 2018;
originally announced July 2018.
-
Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures
Authors:
Craig M. Polley,
Ryszard Buczko,
Alexander Forsman,
Piotr Dziawa,
Andrzej Szczerbakow,
Rafał Rechciński,
Bogdan J. Kowalski,
Tomasz Story,
Małgorzata Trzyna,
Marco Bianchi,
Antonija Grubišić Čabo,
Philip Hofmann,
Oscar Tjernberg,
Thiagarajan Balasubramanian
Abstract:
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis f…
▽ More
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultra-high vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb$_{1-x}$Sn$_{x}$Se(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each $\bar{X}$ is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.
△ Less
Submitted 21 December, 2017;
originally announced December 2017.
-
Experimental search for the origin of low-energy modes in topological materials
Authors:
G. P. Mazur,
K. Dybko,
A. Szczerbakow,
J. Z. Domagala,
A. Kazakov,
M. Zgirski,
E. Lusakowska,
S. Kret,
J. Korczak,
T. Story,
M. Sawicki,
T. Dietl
Abstract:
Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles…
▽ More
Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles, and show to what extent our data are consistent with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations to a collective state adjacent to atomic steps at topological surfaces.
△ Less
Submitted 27 July, 2019; v1 submitted 12 September, 2017;
originally announced September 2017.
-
Experimental evidence for topological surface states wrapping around bulk SnTe crystal
Authors:
K. Dybko,
M. Szot,
A. Szczerbakow,
M. U. Gutowska,
T. Zajarniuk,
J. Z. Domagala,
A. Szewczyk,
T. Story,
W. Zawadzki
Abstract:
We demonstrate that the metallic topological surface states wrap on all sides the 3D topological crystalline insulator SnTe. This is achieved by studying oscillatory quantum magneto-transport and magnetization at tilted magnetic fields which enables us to observe simultaneous contributions from neighbouring sample sides. Taking into account pinning of the Fermi energy by the SnTe reservoir we succ…
▽ More
We demonstrate that the metallic topological surface states wrap on all sides the 3D topological crystalline insulator SnTe. This is achieved by studying oscillatory quantum magneto-transport and magnetization at tilted magnetic fields which enables us to observe simultaneous contributions from neighbouring sample sides. Taking into account pinning of the Fermi energy by the SnTe reservoir we successfully describe theoretically the de Haas-van Alphen oscillations of magnetization. The determined π-Berry phase of surface states confirms their Dirac fermion character. We independently observe oscillatory contributions of magneto-transport and magnetization originating from the bulk SnTe reservoir of high hole density. It is concluded that the bulk and surface Landau states exist in parallel. Our main result that the bulk reservoir is surrounded on all sides by the topological surface states has an universal character.
△ Less
Submitted 19 July, 2017;
originally announced July 2017.
-
Robust spin-polarized midgap states at step edges of topological crystalline insulators
Authors:
Paolo Sessi,
Domenico Di Sante,
Andrzej Szczerbakow,
Florian Glott,
Stefan Wilfert,
Henrik Schmidt,
Thomas Bathon,
Piotr Dziawa,
Martin Greiter,
Titus Neupert,
Giorgio Sangiovanni,
Tomasz Story,
Ronny Thomale,
Matthias Bode
Abstract:
Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three- dimensional topological cr…
▽ More
Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling spectroscopy, we uncover the existence of one-dimensional (1D) midgap states at odd-atomic surface step edges of the three- dimensional topological crystalline insulator (Pb,Sn)Se. A minimal toy model and realistic tight- binding calculations identify them as spin-polarized flat bands connecting two Dirac points. This non-trivial origin provides the 1D midgap states with inherent stability and protects them from backscattering. We experimentally show that this stability results in a striking robustness to defects, strong magnetic fields, and elevated temperature.
△ Less
Submitted 21 December, 2016;
originally announced December 2016.
-
Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1-xSnxSe
Authors:
K. Dybko,
P. Pfeffer,
M. Szot,
A. Szczerbakow,
A. Reszka,
T. Story,
W. Zawadzki
Abstract:
The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which…
▽ More
The transverse Nernst Ettingshausen (N-E) effect and electron mobility in Pb$_{1-x}$Sn$_x$Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap $E_g$. The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap $E_g$ of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe $dc$ transport effects in the situation of extreme band's nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron \textbf{k} vector. Various scattering modes and their contribution to transport phenomena in Pb$_{1-x}$Sn$_x$Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.
△ Less
Submitted 23 November, 2015; v1 submitted 23 September, 2015;
originally announced September 2015.
-
Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
Authors:
W. Knoff,
A. Łusakowski,
J. Z. Domagała,
R. Minikayev,
B. Taliashvili,
E. Łusakowska,
A. Pieniążek,
A. Szczerbakow,
T. Story
Abstract:
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is contr…
▽ More
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
△ Less
Submitted 22 July, 2015;
originally announced July 2015.
-
Magnetic anisotropy energy in disordered Ge_{1-x}Mn_{x}Te
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high c…
▽ More
We theoretically analyze the influence of chemical disorder on magnetic anisotropy in Ge_{1-x}Mn_{x}Te semiconductor layers known to exhibit carrier-induced ferromagnetism and ferroelectric distortion of rhombohedral crystal lattice. Using DFT method we determine the local changes in the crystal structure due to Mn ions substitution for Ge and due to the presence in Ge_{1-x}Mn_{x}Te of very high concentration of cation vacancies. We calculate the effect of this structural and chemical disorder on single ion magnetic anisotropy mechanism and show that its contribution is order of magnitude smaller as compared to magnetic anisotropy mechanism originating from the spin polarization induced by Mn ions into neighboring Te and Ge ions. We also discuss magnetic anisotropy effects due to pairs of Mn ions differently allocated in the lattice. The spatial averaging over chemical disorder strongly reduces the strength of this magnetic anisotropy mechanism and restores the global rhombohedral symmetry of magnetic system.
△ Less
Submitted 2 July, 2015;
originally announced July 2015.
-
Direct observation and temperature control of the surface Dirac gap in the topological crystalline insulator (Pb,Sn)Se
Authors:
B. M. Wojek,
M. H. Berntsen,
V. Jonsson,
A. Szczerbakow,
P. Dziawa,
B. J. Kowalski,
T. Story,
O. Tjernberg
Abstract:
Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of th…
▽ More
Since the advent of topological insulators hosting symmetry-protected Dirac surface states, efforts have been made to gap these states in a controllable way. A new route to accomplish this was opened up by the discovery of topological crystalline insulators (TCIs) where the topological states are protected by real space crystal symmetries and thus prone to gap formation by structural changes of the lattice. Here, we show for the first time a temperature-driven gap opening in Dirac surface states within the TCI phase in (Pb,Sn)Se. By using angle-resolved photoelectron spectroscopy, the gap formation and mass acquisition is studied as a function of composition and temperature. The resulting observations lead to the addition of a temperature- and composition-dependent boundary between massless and massive Dirac states in the topological phase diagram for (Pb,Sn)Se (001). Overall, our results experimentally establish the possibility to tune between a massless and massive topological state on the surface of a topological system.
△ Less
Submitted 13 May, 2015;
originally announced May 2015.
-
DFT calculations of magnetic anisotropy energy for GeMnTe ferromagnetic semiconductor
Authors:
A. Łusakowski,
P. Bogusławski,
T. Story
Abstract:
Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in part…
▽ More
Density functional theory (DFT) calculations of the energy of magnetic anisotropy for diluted ferromagnetic semiconductor GeMnTe were performed using using OpenMX package with fully relativistic pseudopotentials. The influence of hole concentration and magnetic ion neighborhood on magnetic anisotropy energy is presented. Analysis of microscopic mechanism of magnetic anisotropy is provided, in particular the role of spin-orbit coupling, spin polarization and spatial changes of electron density are discussed. The calculations are in accordance with the experimental observation of perpendicular magnetic anisotropy in rhombohedral GeMnTe (111) thin layers.
△ Less
Submitted 25 May, 2015; v1 submitted 5 February, 2015;
originally announced February 2015.
-
All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
Authors:
Aloyzas Siusys,
Janusz Sadowski,
Maciej Sawicki,
Slawomir Kret,
Tomasz Wojciechowski,
Katarzyna Gas,
Wojciech Szuszkiewicz,
Agnieszka Kaminska,
Tomasz Story
Abstract:
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron micr…
▽ More
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In,Ga)As core nanowires were grown at high temperature (500 °C) whereas (Ga,Mn)As shells were deposited on the {1-100} side facets of the cores at much lower temperature (220 °C). High resolution transmission electron microscopy images and high spectral resolution Raman scattering data show that both the cores and the shells of the nanowires have wurtzite crystalline structure. Scanning and transmission electron microscopy observations show smooth (Ga,Mn)As shells containing 5% of Mn epitaxially deposited on (In,Ga)As cores containing about 10% of In, without any misfit dislocations at the core-shell interface. With the In content in the (In,Ga)As cores larger than 5% the (In,Ga)As lattice parameter is higher than that of (Ga,Mn)As and the shell is in the tensile strain state. Elaborated magnetic studies indicate the presence of ferromagnetic coupling in (Ga,Mn)As shells at the temperatures in excess of 33 K. This coupling is maintained only in separated mesoscopic volumes resulting in an overall superparamagnetic behavior which gets blocked below ~17 K.
△ Less
Submitted 9 September, 2014;
originally announced September 2014.
-
On the nature of the band inversion and the topological phase transition in (Pb,Sn)Se
Authors:
B. M. Wojek,
P. Dziawa,
B. J. Kowalski,
A. Szczerbakow,
A. M. Black-Schaffer,
M. H. Berntsen,
T. Balasubramanian,
T. Story,
O. Tjernberg
Abstract:
The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the…
▽ More
The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition.
△ Less
Submitted 21 September, 2014; v1 submitted 26 January, 2014;
originally announced January 2014.
-
Observation of topological crystalline insulator surface states on (111)-oriented Pb$_{1-x}$Sn$_{x}$Se films
Authors:
C. M. Polley,
P. Dziawa,
A. Reszka,
A. Szczerbakow,
R. Minikayev,
J. Z. Domagala,
S. Safaei,
P. Kacman,
R. Buczko,
J. Adell,
M. H. Berntsen,
B. M. Wojek,
O. Tjernberg,
B. J. Kowalski,
T. Story,
T. Balasubramanian
Abstract:
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the…
▽ More
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.
△ Less
Submitted 11 December, 2013;
originally announced December 2013.
-
Spin-polarized (001) surface states of the topological crystalline insulator Pb_{0.73}Sn_{0.27}Se
Authors:
B. M. Wojek,
R. Buczko,
S. Safaei,
P. Dziawa,
B. J. Kowalski,
M. H. Berntsen,
T. Balasubramanian,
M. Leandersson,
A. Szczerbakow,
P. Kacman,
T. Story,
O. Tjernberg
Abstract:
We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states wi…
▽ More
We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral spin structure.
△ Less
Submitted 8 December, 2012;
originally announced December 2012.
-
Topological crystalline insulator states in Pb(1-x)Sn(x)Se
Authors:
P. Dziawa,
B. J. Kowalski,
K. Dybko,
R. Buczko,
A. Szczerbakow,
M. Szot,
E. Łusakowska,
T. Balasubramanian,
B. M. Wojek,
M. H. Berntsen,
O. Tjernberg,
T. Story
Abstract:
Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested th…
▽ More
Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions.
△ Less
Submitted 15 August, 2013; v1 submitted 8 June, 2012;
originally announced June 2012.
-
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
Authors:
V. Osinniy,
K. Dybko,
A. Jedrzejczak,
M. Arciszewska,
W. Dobrowolski,
T. Story,
M. V. Radchenko,
V. I. Sichkovskiy,
G. V. Lashkarev,
S. M. Olsthoorn,
J. Sadowski
Abstract:
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about carrier transport mechanisms in layers with both metallic and non-metallic type of conductivity and allows determination of the Fermi energy and carrier conc…
▽ More
Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga(1-x)Mn(x)As epitaxial layers (0.015<x<0.06). Thermoelectric power analysis gives the information about carrier transport mechanisms in layers with both metallic and non-metallic type of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T>70 K) the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy EF=220+-25 meV, nearly independent of Mn content (for 0.02<x<0.05). At lower temperatures GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature. The layers exhibiting insulating electrical properties show 1/T-type increase of thermoelectric power at low temperatures.
△ Less
Submitted 24 September, 2004;
originally announced September 2004.
-
Antiferromagnetic Interlayer Coupling in Ferromagnetic Semiconductor EuS/PbS(001) Superlattices
Authors:
H. Kepa,
J. Kutner-Pielaszek,
J. Blinowski,
A. Twardowski,
C. F. Majkrzak,
T. Story,
P. Kacman,
R. R. Galazka,
K. Ha,
H. J. M. Swagten,
W. J. M. de Jonge,
A. Yu. Sipatov,
V. Volobuev,
T. M. Giebultowicz
Abstract:
Antiferromagnetic coupling between ferromagnetic layers has been observed for the first time in all-semiconductor superlattice structure EuS/PbS(001), by neutron scattering and magnetization measurements. Spin-dependent superlattice band structure effects are invoked to explain the possible origin and the strength of the observed coupling.
Antiferromagnetic coupling between ferromagnetic layers has been observed for the first time in all-semiconductor superlattice structure EuS/PbS(001), by neutron scattering and magnetization measurements. Spin-dependent superlattice band structure effects are invoked to explain the possible origin and the strength of the observed coupling.
△ Less
Submitted 17 July, 2001; v1 submitted 11 February, 2001;
originally announced February 2001.
