One-step synthesis of graphene containing topological defects
Authors:
Benedikt P. Klein,
Matthew A. Stoodley,
Joel Deyerling,
Luke A. Rochford,
Dylan B. Morgan,
David Hopkinson,
Sam Sullivan-Allsop,
Fulden Eratam,
Lars Sattler,
Sebastian M. Weber,
Gerhard Hilt,
Alexander Generalov,
Alexei Preobrajenski,
Thomas Liddy,
Leon B. S. Williams,
Tien-Lin Lee,
Alex Saywell,
Roman Gorbachev,
Sarah J. Haigh,
Christopher Allen,
Willi Auwärter,
Reinhard J. Maurer,
David A. Duncan
Abstract:
Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used…
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Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.
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Submitted 4 November, 2024;
originally announced November 2024.
