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Electrochemically induced switching from antiferromagnetic spin-chain to frustrated spin-glass state in maple-leaf lattice Na2Mn3O7
Authors:
Corson Chao,
Shivani Srivastava,
Ming Lei,
Bachu Sravan Kumar,
Varun Kamboj,
Hari Ramachandran,
Zhelong Jiang,
Anirudh Adavi,
Kevin H. Stone,
Mark Asta,
Lilia S. Xie,
Iwnetim I. Abate
Abstract:
We report the electrochemical tuning of magnetic properties in the Na2Mn3O7 maple-leaf lattice (MLL) through ion deintercalation, revealing a switch from the 1D antiferromagnetic (AFM) spin-chain behavior of the S=3/2 MLL structure to frustrated magnetism spin-glass behavior. By utilizing Na deintercalation, we stabilize ferromagnetic (FM) short-range interactions within the original short-range A…
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We report the electrochemical tuning of magnetic properties in the Na2Mn3O7 maple-leaf lattice (MLL) through ion deintercalation, revealing a switch from the 1D antiferromagnetic (AFM) spin-chain behavior of the S=3/2 MLL structure to frustrated magnetism spin-glass behavior. By utilizing Na deintercalation, we stabilize ferromagnetic (FM) short-range interactions within the original short-range AFM system, creating magnetic frustration within the system beyond that induced from the MLL geometrically frustrated structure, leading to a spin-glass state. Magnetic and structural analyses, combined with density functional theory (DFT) calculations, demonstrate the near-degeneracy between AFM and FM configurations in Na2Mn3O7, suggesting that the altered lattice distortions and disorder introduced via deintercalation are responsible for the frustrated magnetism. Our findings provide a novel platform for studying low-dimensional magnetism, spin glass behavior, and potential applications in spintronics and computing technologies. This study represents the first observation of an induced spin glass state in MLL materials and is a rare example of electrochemically induced spin glass state, highlighting the critical role of ion intercalation in tuning magnetic interactions.
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Submitted 21 January, 2025; v1 submitted 24 January, 2023;
originally announced January 2023.
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Scalable synthesis and characterization of multilayer $γ$-graphyne, new carbon crystals with a small direct bandgap
Authors:
Victor G. Desyatkin,
William B. Martin,
Ali E. Aliev,
Nathaniel E. Chapman,
Alexandre F. Fonseca,
Douglas S. Galvão,
E. Roy Miller,
Kevin H. Stone,
Zhong Wang,
Dante Zakhidov,
F. Ted Limpoco,
Sarah R. Almahdali,
Shane M. Parker,
Ray H. Baughman,
Valentin O. Rodionov
Abstract:
$γ$-Graphyne is the most symmetric sp2/sp1 allotrope of carbon, which can be viewed as graphene uniformly expanded through insertion of two-carbon acetylenic units between all the aromatic rings. To date, synthesis of bulk $γ$-graphyne has remained a challenge. We here report the synthesis of multilayer $γ…
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$γ$-Graphyne is the most symmetric sp2/sp1 allotrope of carbon, which can be viewed as graphene uniformly expanded through insertion of two-carbon acetylenic units between all the aromatic rings. To date, synthesis of bulk $γ$-graphyne has remained a challenge. We here report the synthesis of multilayer $γ$-graphyne through crystallization-assisted irreversible cross-coupling polymerization. Comprehensive characterization of this new carbon phase is described, including synchrotron X-ray diffraction, electron diffraction, lateral force microscopy, Raman and infrared spectroscopy, and cyclic voltammetry. Experiments indicate that $γ$-graphyne is a 0.48 eV bandgap semiconductor, with a hexagonal a-axis spacing of 6.88 Å and an interlayer spacing of 3.48 Å, which is consistent with theoretical predictions. The observed crystal structure has an aperiodic sheet stacking. The material is thermally stable up to 240 $^\circ$C but undergoes a transformation at higher temperatures. While conventional 2D polymerizations and reticular chemistry rely on error correction through reversibility, we demonstrate that a periodic covalent lattice can be synthesized under purely kinetic control. The reported methodology is scalable and inspires extension to other allotropes of the graphyne family.
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Submitted 12 January, 2023;
originally announced January 2023.
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Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction
Authors:
Ben L. Levy-Wendt,
Brenden R. Ortiz,
Lìdia C. Gomes,
Kevin H. Stone,
Donata Passarello,
Elif Ertekin,
Eric S. Toberer,
Michael F. Toney
Abstract:
The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crysta…
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The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.
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Submitted 9 October, 2020;
originally announced October 2020.
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Tuning Perpendicular Magnetic Anisotropy by Oxygen Octahedral Rotations in (La$_{1-x}$Sr$_{x}$MnO$_{3}$)/(SrIrO$_{3}$) Superlattices
Authors:
Di Yi,
Charles L. Flint,
Purnima P. Balakrishnan,
Krishnamurthy Mahalingam,
Brittany Urwin,
Arturas Vailionis,
Alpha T. NDiaye,
Padraic Shafer,
Elke Arenholz,
Yongseong Choi,
Kevin H. Stone,
JiunHaw Chu,
Brandon M. Howe,
Jian Liu,
Ian R. Fisher,
Yuri Suzuki
Abstract:
Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by oxygen octahedral rotation. In superlattices comprised of La$_{1-x}$Sr$_{x}$MnO$_{3}$ and SrIrO$_{3}$, we find that all superlattices (0$\leq$x$\leq$1) exhibit fer…
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Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new type of interface induced PMA that is controlled by oxygen octahedral rotation. In superlattices comprised of La$_{1-x}$Sr$_{x}$MnO$_{3}$ and SrIrO$_{3}$, we find that all superlattices (0$\leq$x$\leq$1) exhibit ferromagnetism despite the fact that La$_{1-x}$Sr$_{x}$MnO$_{3}$ is antiferromagnetic for x$>$0.5. PMA as high as 4$\times$10$^6$ erg/cm$^3$ is observed by increasing x and attributed to a decrease of oxygen octahedral rotation at interfaces. We also demonstrate that oxygen octahedral deformation cannot explain the trend in PMA. These results reveal a new degree of freedom to control PMA, enabling discovery of emergent magnetic textures and topological phenomena.
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Submitted 6 August, 2017; v1 submitted 11 July, 2017;
originally announced July 2017.
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Magnetism in a family of $S = 1$ square lattice antiferromagnets Ni$X_2$(pyz)$_2$ ($X = $ Cl, Br, I, NCS; pyz = pyrazine)
Authors:
J. Liu,
P. A. Goddard,
J. Singleton,
J. Brambleby,
F. Foronda,
J. S. Möller,
Y. Kohama,
S. Ghannadzadeh,
A. Ardavan,
S. J. Blundell,
T. Lancaster,
F. Xiao,
R. C. Williams,
F. L. Pratt,
P. J. Baker,
K. Wierschem,
S. H. Lapidus,
K. H. Stone,
P. W. Stephens,
J. Bendix,
M. R. Lees,
T. J. Woods,
K. E. Carreiro,
H. E. Tran,
C. J. Villa
, et al. (1 additional authors not shown)
Abstract:
The crystal structures of Ni$X_2$(pyz)$_2$ ($X$ = Cl (\textbf{1}), Br (\textbf{2}), I (\textbf{3}) and NCS (\textbf{4})) were determined at 298~K by synchrotron X-ray powder diffraction. All four compounds consist of two-dimensional (2D) square arrays self-assembled from octahedral NiN$_4$$X_2$ units that are bridged by pyz ligands. The 2D layered motifs displayed by \textbf{1}-\textbf{4} are rele…
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The crystal structures of Ni$X_2$(pyz)$_2$ ($X$ = Cl (\textbf{1}), Br (\textbf{2}), I (\textbf{3}) and NCS (\textbf{4})) were determined at 298~K by synchrotron X-ray powder diffraction. All four compounds consist of two-dimensional (2D) square arrays self-assembled from octahedral NiN$_4$$X_2$ units that are bridged by pyz ligands. The 2D layered motifs displayed by \textbf{1}-\textbf{4} are relevant to bifluoride-bridged [Ni(HF$_2$)(pyz)$_2$]$Z$F$_6$ ($Z$ = P, Sb) which also possess the same 2D layers. In contrast, terminal $X$ ligands occupy axial positions in \textbf{1}-\textbf{4} and cause a staggering of adjacent layers. Long-range antiferromagnetic order occurs below 1.5 (Cl), 1.9 (Br and NCS) and 2.5~K (I) as determined by heat capacity and muon-spin relaxation. The single-ion anisotropy and $g$ factor of \textbf{2}, \textbf{3} and \textbf{4} are measured by electron spin resonance where no zero--field splitting was found. The magnetism of \textbf{1}-\textbf{4} crosses a spectrum from quasi-two-dimensional to three-dimensional antiferromagnetism. An excellent agreement was found between the pulsed-field magnetization, magnetic susceptibility and $T_\textrm{N}$ of \textbf{2} and \textbf{4}. Magnetization curves for \textbf{2} and \textbf{4} calculated by quantum Monte Carlo simulation also show excellent agreement with the pulsed-field data. \textbf{3} is characterized as a three-dimensional antiferromagnet with the interlayer interaction ($J_\perp$) slightly stronger than the interaction within the two-dimensional [Ni(pyz)$_2$]$^{2+}$ square planes ($J_\textrm{pyz}$).
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Submitted 23 June, 2015; v1 submitted 12 October, 2014;
originally announced October 2014.
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Photovoltaic Oscillations Due to Edge-Magnetoplasmon Modes in a Very-High Mobility 2D Electron Gas
Authors:
K. Stone,
C. L. Yang,
Z. Q. Yuan,
R. R. Du,
L. N. Pfeiffer,
K. W. West
Abstract:
Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the resp…
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Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the respective models that 1/B oscillations occur in bulk while the B-oscillations occur along the edges of the Hall bars. In contrast to the original report of this phenomenon (Ref. 1) the periodicity of the B-oscillations in our samples are found to be independent of L, the length of the Hall bar section between voltage measuring leads.
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Submitted 12 November, 2007; v1 submitted 20 September, 2007;
originally announced September 2007.
