From Si Nanowires to Ge Nanocrystals for VIS-NIR-SWIR Sensors and Non-volatile Memories: A Review
Authors:
Ana-Maria Lepadatu,
Ionel Stavarache,
Catalin Palade,
Adrian Slav,
Valentin A. Maraloiu,
Ioana Dascalescu,
Ovidiu Cojocaru,
Valentin S. Teodorescu,
Toma Stoica,
Magdalena L. Ciurea
Abstract:
Nanocrystalline Si and Ge are of high interest for integrated Si photonics related to light emission, optical sensors, photodetectors, solar energy harvesting and conversion devices, and also for floating gate non-volatile memories (NVMs). In this review, we have focused on nanocrystalline porous Si (nc-PS) with extension to Si nanodots, and Ge nanocrystals (NCs)/quantum dots (QDs)/nanoparticles (…
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Nanocrystalline Si and Ge are of high interest for integrated Si photonics related to light emission, optical sensors, photodetectors, solar energy harvesting and conversion devices, and also for floating gate non-volatile memories (NVMs). In this review, we have focused on nanocrystalline porous Si (nc-PS) with extension to Si nanodots, and Ge nanocrystals (NCs)/quantum dots (QDs)/nanoparticles (NPs) embedded in oxides (SiO$_2$, TiO$_2$, HfO$_2$, Al$_2$O$_3$). The great asset of nc-PS is its intense photoluminescence in VIS at room temperature (RT), while Ge NCs/NPs embedded in oxides show high photosensitivity in VIS-NIR-SWIR in the spectral photocurrent up to 1325 nm at RT. Ge NCs/NPs/QDs floating gate NVMs present high memory performance, the retention characteristics corresponding to the state of the art for NCs floating gate NVMs. We prove the relevance of controlling the preparation parameters for obtaining films with targeted photoluminescence, photosensitivity and charge storage properties for applications, e.g. VIS-NIR-SWIR optical sensors and photodetectors, and electronic and photoelectric NVMs. We evidence the correlation of preparation conditions, morphology, composition and crystalline structure with optical, electrical, photoelectrical and charge storage properties and also evidence the contribution of quantum confinement effect, localized states and trapping centers.
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Submitted 27 June, 2022;
originally announced June 2022.
Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
Authors:
C. Weyrich,
M. Drögeler,
J. Kampmeier,
M. Eschbach,
G. Mussler,
T. Merzenich,
T. Stoica,
I. E. Batov,
J. Schubert,
L. Plucinski,
B. Beschoten,
C. M. Schneider,
C. Stampfer,
D. Grützmacher,
Th. Schäpers
Abstract:
Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the…
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Ternary (Bi1-xSbx)2Te3 films with an Sb content between 0 and 100% were deposited on a Si(111) substrate by means of molecular beam epitaxy. X-ray diffraction measurements confirm single crystal growth in all cases. The Sb content is determined by X-ray photoelectron spectroscopy. Consistent values of the Sb content are obtained from Raman spectroscopy. Scanning Raman spectroscopy reveals that the (Bi1-xSbx)2Te3 layers with an intermediate Sb content show spatial composition inhomogeneities. The observed spectra broadening in angular-resolved photoemission spectroscopy (ARPES) is also attributed to this phenomena. Upon increasing the Sb content from x=0 to 1 the ARPES measurements show a shift of the Fermi level from the conduction band to the valence band. This shift is also confirmed by corresponding magnetotransport measurements where the conductance changes from n- to p-type. In this transition region, an increase of the resistivity is found, indicating a location of the Fermi level within the band gap region. More detailed measurements in the transition region reveals that the transport takes place in two independent channels. By means of a gate electrode the transport can be changed from n- to p-type, thus allowing a tuning of the Fermi level within the topologically protected surface states.
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Submitted 18 October, 2016; v1 submitted 3 November, 2015;
originally announced November 2015.
