Showing 1–9 of 9 results for author: Stinaff, E A

Characterization of the Shell Structure in Coupled Quantum Dots through Resonant Optical Probing

Authors: Mauricio Garrido, Kushal C. Wijesundara, Swati Ramanathan, E. A. Stinaff, M. Scheibner, A. S. Bracker, D. Gammon

Abstract: Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and reco… ▽ More Excited states in single quantum dots (QDs) have been shown to be useful for spin state initialization and manipulation. For scalable quantum information processing it is necessary to have multiple spins interacting. Therefore, we present initial results from photoluminescence excitation studies of excited states in coupled quantum dots (CQDs). Due to the rich set of possible excitation and recombination possibilities, a technique for visualizing photoluminescence excitation in coupled quantum dots is discussed, by which both the interaction between the dots and the type of absorption and emission that generated the photoluminescence is easily and clearly revealed. As an example, this technique is applied to characterize the shell structure of the hole in the top dot and the results are compared with those using Level Anti-Crossing Spectroscopy (LACS). △ Less

Submitted 12 March, 2009; v1 submitted 29 January, 2009; originally announced January 2009.

Comments: 6 pages, 4 figures

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

Authors: Kushal C. Wijesundara, Mauricio Garrido, Swati Ramanathan, E. A. Stinaff, M. Scheibner, A. S. Bracker, D. Gammon

Abstract: Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by var… ▽ More Spin manipulation in coupled quantum dots is of interest for quantum information applications. Control of the exchange interaction between electrons and holes via an applied electric field may provide a promising technique for such spin control. Polarization dependent photoluminescence (PL) spectra were used to investigate the spin dependent interactions in coupled quantum dot systems and by varying an electric field, the ground state hole energy levels are brought into resonance, resulting in the formation of molecular orbitals observed as anticrossings between the direct and indirect transitions in the spectra. The indirect and direct transitions of the neutral exciton demonstrate high and low circular polarization memory respectively due to variation in the exchange interaction. The ratio between the polarization values as a function of electric field, and the barrier height was measured. These results indicate a possible method of tuning between indirect and direct configurations to control the degree of exchange interaction. △ Less

Submitted 29 January, 2009; originally announced January 2009.

Comments: 6 pages, 3 figures

Photoluminescence Spectroscopy of the Molecular Biexciton in Vertically Stacked Quantum Dot Pairs

Authors: M. Scheibner, I. V. Ponomarev, E. A. Stinaff, M. F. Doty, A. S. Bracker, C. S. Hellberg, T. L. Reinecke, D. Gammon

Abstract: We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structur… ▽ More We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances. The spectra are described well within a few-level, few-particle molecular model. Their properties can be modified broadly by an electric field and by structural design, which makes them highly attractive for controlling nonlinear optical properties. △ Less

Submitted 8 November, 2007; v1 submitted 9 May, 2007; originally announced May 2007.

Comments: 4 pages, 5 figures, (v2, revision based on reviewers comments, published)

Journal ref: Phys. Rev. Lett. 99, 197402 (2007)

Engineering electron and hole tunneling with asymmetric InAs quantum dot molecules

Authors: A. S. Bracker, M. Scheibner, M. F. Doty, E. A. Stinaff, I. V. Ponomarev, J. C. Kim, L. J. Whitman, T. L. Reinecke, D. Gammon

Abstract: Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a sy… ▽ More Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. We present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures. △ Less

Submitted 18 October, 2006; v1 submitted 6 September, 2006; originally announced September 2006.

Comments: 9 pages, 4 figures. To be published in Applied Physics Letters. version 2: Typographical corrections and reference format for journal

Electrically tunable g-factors in quantum dot molecular spin states

Authors: M. F. Doty, M. Scheibner, I. V. Ponomarev, E. A. Stinaff, A. S. Bracker, V. L. Korenev, T. L. Reinecke, D. Gammon

Abstract: We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomen… ▽ More We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals. △ Less

Submitted 17 October, 2006; v1 submitted 8 August, 2006; originally announced August 2006.

Comments: 5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comments

Spin Fine Structure in Optically Excited Quantum Dot Molecules

Authors: M. Scheibner, M. F. Doty, I. V. Ponomarev, A. S. Bracker, E. A. Stinaff, V. L. Korenev, T. L. Reinecke, D. Gammon

Abstract: The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical fo… ▽ More The interaction between spins in coupled quantum dots is revealed in distinct fine structure patterns in the measured optical spectra of InAs/GaAs double quantum dot molecules containing zero, one, or two excess holes. The fine structure is explained well in terms of a uniquely molecular interplay of spin exchange interactions, Pauli exclusion and orbital tunneling. This knowledge is critical for converting quantum dot molecule tunneling into a means of optically coupling not just orbitals, but spins. △ Less

Submitted 15 June, 2007; v1 submitted 10 July, 2006; originally announced July 2006.

Comments: 10 pages, 7 figures, added material, (published)

Journal ref: Phys. Rev. B 75, 245318 (2007) (9 pages)

Polarized fine structure in the excitation spectrum of a negatively charged quantum dot

Authors: M. E. Ware, E. A. Stinaff, D. Gammon, M. F. Doty, A. S. Bracker, D. Gershoni, V. L. Korenev, S. C. Badescu, Y. Lyanda-Geller, T. L. Reinecke

Abstract: We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the… ▽ More We report polarized photoluminescence excitation spectroscopy of the negative trion in single charge tunable InAs/GaAs quantum dots. The spectrum exhibits a p-shell resonance with polarized fine structure arising from the direct excitation of the electron spin triplet states. The energy splitting arises from the axially symmetric electron-hole exchange interaction. The magnitude and sign of the polarization are understood from the spin character of the triplet states and a small amount of quantum dot asymmetry, which mixes the wavefunctions through asymmetric e-e and e-h exchange interactions. △ Less

Submitted 23 June, 2005; originally announced June 2005.

Journal ref: Phys. Rev. Lett. 95 (2005) 177403

Optical pumping of electronic and nuclear spin in single charge-tunable quantum dots

Authors: A. S. Bracker, E. A. Stinaff, D. Gammon, M. E. Ware, J. G. Tischler, A. Shabaev, Al. L. Efros, D. Park, D. Gershoni, V. L. Korenev, I. A. Merkulov

Abstract: We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pumping of ground state electron spins enhances this effect, as demonstrated through the first measureme… ▽ More We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the charge from positive to neutral to negative using a Schottky diode. We observe that photoluminescence polarization memory has the same sign as the net charge of the dot. Optical pumping of ground state electron spins enhances this effect, as demonstrated through the first measurements of the Hanle effect on an individual quantum dot. With the Overhauser effect in a high longitudinal magnetic field, we demonstrate efficient optical pumping of the quantum dot's nuclear spins for all three charge states. △ Less

Submitted 20 August, 2004; originally announced August 2004.

Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs

Authors: R. I. Dzhioev, K. V. Kavokin, V. L. Korenev, M. V. Lazarev, N. K. Poletaev, B. P. Zakharchenya, E. A. Stinaff, D. Gammon, A. S. Bracker, M. E. Ware

Abstract: We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-con… ▽ More We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements. Understanding of this phenomenon could lead to high temperature engineering of the electron spin memory. △ Less

Submitted 6 July, 2004; originally announced July 2004.