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A Compact Model of Threshold Switching Devices for Efficient Circuit Simulations
Authors:
Mohamad Moner Al Chawa,
Daniel Bedau,
Ahmet S. Demirkol,
James W. Reiner,
Derek A. Stewart,
Michael K. Grobis,
Ronald Tetzlaff
Abstract:
In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that desc…
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In this paper, we present a new compact model of threshold switching devices which is suitable for efficient circuit-level simulations. First, a macro model, based on a compact transistor based circuit, was implemented in LTSPICE. Then, a descriptive model was extracted and implemented in MATLAB, which is based on the macro model. This macro model was extended to develop a physical model that describes the processes that occur during the threshold switching. The physical model derived comprises a delay structure with few electrical components adjacent to the second junction. The delay model incorporates an internal state variable, which is crucial to transform the descriptive model into a compact model and to parameterize it in terms of electrical parameters that represent the component's behavior. Finally, we applied our model by fitting measured i-v data of an OTS device manufactured by Western Digital Research.
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Submitted 3 August, 2023;
originally announced August 2023.
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Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices
Authors:
Kiumars Aryana,
John T. Gaskins,
Joyeeta Nag,
Derek A. Stewart,
Zhaoqiang Bai,
Saikat Mukhopadhyay,
John C. Read,
David H. Olson,
Eric R. Hoglund,
James M. Howe,
Ashutosh Giri,
Michael K. Grobis,
Patrick E. Hopkins
Abstract:
Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close…
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Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.
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Submitted 10 November, 2020;
originally announced November 2020.
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The role of lighter and heavier embedded nanoparticles on the thermal conductivity of SiGe alloys
Authors:
A. Kundu,
N. Mingo,
D. A. Broido,
D. A. Stewart
Abstract:
We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in $\text{Si}_{0.5}\text{Ge}_{0.5}$ provide…
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We have used an atomistic {\it ab initio} approach with no adjustable parameters to compute the lattice thermal conductivity of Si$_{0.5}$Ge$_{0.5}$ with a low concentration of embedded Si or Ge nanoparticles of diameters up to 4.4 nm. Through exact Green's function calculation of the nanoparticle scattering rates, we find that embedding Ge nanoparticles in $\text{Si}_{0.5}\text{Ge}_{0.5}$ provides 20% lower thermal conductivities than embedding Si nanoparticles. This contrasts with the Born approximation which predicts an equal amount of reduction for the two cases, irrespective of the sign of the mass difference. Despite these differences, we find that the Born approximation still performs remarkably well, and it permits investigation of larger nanoparticle sizes, up to 60 nm in diameter, not feasible with the exact approach.
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Submitted 31 August, 2011;
originally announced August 2011.
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Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions
Authors:
Derek A. Stewart
Abstract:
Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that boron diffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-O regions. These tunnel junctions provide high tunneling magnetoresistance values and low RA products. However the crystal structure of the Mg-B-O region remains unknown. Using density functional techniques, I examine three potential Mg(B) oxides incl…
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Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that boron diffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-O regions. These tunnel junctions provide high tunneling magnetoresistance values and low RA products. However the crystal structure of the Mg-B-O region remains unknown. Using density functional techniques, I examine three potential Mg(B) oxides including Mg$_{2}$B$_{2}$O$_{5}$ (monoclinic and triclinic) and the orthorhombic mineral Kotoite (Mg$_3$B$_2$O$_6$). Kotoite is the best candidate for formation in magnetic tunnel junctions. The (100) surface of Kotoite has a good lattice match with (001) MgO and could template neighboring FeCo into bcc layers during annealing. Complex band structure analysis of Kotoite shows that the C$_{2v}$ $\tildeΔ_1$ band has a much smaller imaginary k component than the C$_{2v}$ $\tildeΔ_4$ band. Based on symmetry analysis, the majority spin $Δ_1$ band in FeCo should couple well with the Kotoite $\tildeΔ_1$ band, while the minority FeCo $Δ_5$ will couple partially with the $\tildeΔ_4$ band. Kotoite provides a new route to high tunneling magnetoresistance based on spin filtering by a lower symmetry oxide region.
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Submitted 28 April, 2009;
originally announced April 2009.
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Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
Authors:
Francois Leonard,
Derek A Stewart
Abstract:
We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter…
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We present self-consistent, non-equilibrium Green's function calculations of the characteristics of short channel carbon nanotube transistors, focusing on the regime of ballistic transport with ohmic contacts. We first establish that the band lineup at the contacts is renormalized by charge transfer, leading to Schottky contacts for small diameter nanotubes and ohmic contacts for large diameter nanotubes, in agreement with recent experiments. For short channel ohmic contact devices, source-drain tunneling and drain-induced barrier lowering significantly impact the current-voltage characteristics. Furthermore, the ON state conductance shows a temperature dependence, even in the absence of phonon scattering or Schottky barriers. This last result also agrees with recently reported experimental measurements.
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Submitted 28 August, 2006;
originally announced August 2006.
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Ab-initio investigation of phonon dispersion and anomalies in palladium
Authors:
Derek A. Stewart
Abstract:
In recent years, palladium has proven to be a crucial component for devices ranging from nanotube field effect transistors to advanced hydrogen storage devices. In this work, I examine the phonon dispersion of fcc Pd using first principle calculations based on density functional perturbation theory. While several groups in the past have studied the acoustic properties of palladium, this is the f…
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In recent years, palladium has proven to be a crucial component for devices ranging from nanotube field effect transistors to advanced hydrogen storage devices. In this work, I examine the phonon dispersion of fcc Pd using first principle calculations based on density functional perturbation theory. While several groups in the past have studied the acoustic properties of palladium, this is the first study to reproduce the phonon dispersion and associated anomaly with high accuracy and no adjustable parameters. In particular, I focus on the Kohn anomaly in the [110] direction.
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Submitted 30 October, 2007; v1 submitted 29 June, 2006;
originally announced June 2006.
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Interface effects in spin-dependent tunneling
Authors:
E. Y. Tsymbal,
K. D. Belashchenko,
J. P. Velev,
S. S. Jaswal,
M. van Schilfgaarde,
I. I. Oleynik,
D. A. Stewart
Abstract:
In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental quest…
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In the past few years the phenomenon of spin dependent tunneling (SDT) in magnetic tunnel junctions (MTJs) has aroused enormous interest and has developed into a vigorous field of research. The large tunneling magnetoresistance (TMR) observed in MTJs garnered much attention due to possible application in random access memories and magnetic field sensors. This led to a number of fundamental questions regarding the phenomenon of SDT. One such question is the role of interfaces in MTJs and their effect on the spin polarization of the tunneling current and TMR. In this paper we consider different models which suggest that the spin polarization is primarily determined by the electronic and atomic structure of the ferromagnet/insulator interfaces rather than by their bulk properties. First, we consider a simple tight-binding model which demonstrates that the existence of interface states and their contribution to the tunneling current depend on the degree of hybridization between the orbitals on metal and insulator atoms. The decisive role of the interfaces is further supported by studies of spin-dependent tunneling within realistic first-principles models of Co/vacuum/Al, Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs. We find that variations in the atomic potentials and bonding strength near the interfaces have a profound effect resulting in the formation of interface resonant states, which dramatically affect the spin polarization and TMR. The strong sensitivity of the tunneling spin polarization and TMR to the interface atomic and electronic structure dramatically expands the possibilities for engineering optimal MTJ properties for device applications.
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Submitted 28 November, 2005;
originally announced November 2005.
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Photocurrents in nanotube junctions
Authors:
D. A. Stewart,
Francois Leonard
Abstract:
Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet ranges. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photo…
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Photocurrents in nanotube p-n junctions are calculated using a non-equilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet ranges. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photocurrent scales linearly and oscillates with device length. The oscillations can be related to the density of states in the valence band, a factor that also determines the relative magnitude of the photoresponse for different bands.
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Submitted 4 April, 2004;
originally announced April 2004.
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Effect of interface bonding on spin-dependent tunneling from the oxidized Co surface
Authors:
K. D. Belashchenko,
E. Y. Tsymbal,
M. van Schilfgaarde,
D. A. Stewart,
I. I. Oleynik,
S. S. Jaswal
Abstract:
We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Julliere's formula and explain the meaning of the ``tunneling density of states'' in some limiting cases. Using this factorization we calculate spin-dependent tunneling from clean and oxidized fcc Co surfaces through vacuum…
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We demonstrate that the factorization of the tunneling transmission into the product of two surface transmission functions and a vacuum decay factor allows one to generalize Julliere's formula and explain the meaning of the ``tunneling density of states'' in some limiting cases. Using this factorization we calculate spin-dependent tunneling from clean and oxidized fcc Co surfaces through vacuum into Al using the principal-layer Green's function approach. We demonstrate that a monolayer of oxygen on the Co (111) surface creates a spin-filter effect due to the Co-O bonding which produces an additional tunneling barrier in the minority-spin channel. This changes the minority-spin dominated conductance for the clean Co surface into a majority spin dominated conductance for the oxidized Co surface.
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Submitted 15 December, 2003; v1 submitted 14 August, 2003;
originally announced August 2003.
