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Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond
Authors:
Carsten Arend,
Jonas Nils Becker,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Christoph Becher
Abstract:
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for s…
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Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to pertubations of the dielectric environment, i.e. they show very weak spectral diffusion. This property renders ensembles of SiV centers interesting for sensing applications. We here report on photoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a low strain, CVD-grown high quality diamond layer, where we measure the fine structure with high resolution and obtain the linewidths and splittings of the SiV centers. We investigate the temperature dependence of the width and position of the fine structure peaks. Our measurements reveal linewidths of about 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz. This difference arises from the inhomogeneous broadening of the transitions caused by residual strain. To overcome inhomogeneous broadening we use spectral hole burning spectroscopy which enables us to measure a nearly lifetime limited homogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence of coherent interaction in the system by driving a $Λ$-scheme. Additional measurements on single emitters created by ion implantation confirm the homogeneous linewidths seen in the spectral hole burning experiments and relate the ground state splitting to the decoherence rate.
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Submitted 14 March, 2016;
originally announced March 2016.
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Optical signatures of silicon-vacancy spins in diamond
Authors:
Tina Muller,
Christian Hepp,
Benjamin Pingault,
Elke Neu,
Stefan Gsell,
Matthias Schreck,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Christoph Becher,
Mete Atature
Abstract:
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of t…
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Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
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Submitted 10 December, 2013;
originally announced December 2013.
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The electronic structure of the silicon vacancy color center in diamond
Authors:
Christian Hepp,
Tina Müller,
Victor Waselowski,
Jonas N. Becker,
Benjamin Pingault,
Hadwig Sternschulte,
Doris Steinmüller-Nethl,
Adam Gali,
Jeronimo R. Maze,
Mete Atatüre,
Christoph Becher
Abstract:
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of si…
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The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar response of single centers and a SiV ensemble in a low strain reference sample proves our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.
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Submitted 11 October, 2013;
originally announced October 2013.
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Low temperature investigations and surface treatments of colloidal narrowband fluorescent nanodiamonds
Authors:
Elke Neu,
Felix Guldner,
Carsten Arend,
Yuejiang Liang,
Slimane Ghodbane,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Anke Krueger,
Christoph Becher
Abstract:
We report fluorescence investigations and Raman spectroscopy on colloidal nanodiamonds (NDs) obtained via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The BASD NDs contain in situ created silicon vacancy (SiV) centers. Whereas many NDs exhibit emission from SiV ensembles, we also identify NDs featuring predominant emission from a single bright SiV…
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We report fluorescence investigations and Raman spectroscopy on colloidal nanodiamonds (NDs) obtained via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition film. The BASD NDs contain in situ created silicon vacancy (SiV) centers. Whereas many NDs exhibit emission from SiV ensembles, we also identify NDs featuring predominant emission from a single bright SiV center. We demonstrate oxidation of the NDs in air as a tool to optimize the crystalline quality of the NDs via removing damaged regions resulting in a reduced ensemble linewidth as well as single photon emission with increased purity. We furthermore investigate the temperature dependent zero-phonon-line fine-structure of a bright single SiV center as well as the polarization properties of its emission and absorption.
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Submitted 6 May, 2013; v1 submitted 13 February, 2013;
originally announced February 2013.
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Low temperature investigations of single silicon vacancy colour centres in diamond
Authors:
Elke Neu,
Christian Hepp,
Michael Hauschild,
Stefan Gsell,
Martin Fischer,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Matthias Schreck,
Christoph Becher
Abstract:
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. Th…
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We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.
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Submitted 4 March, 2013; v1 submitted 11 October, 2012;
originally announced October 2012.
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Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films
Authors:
Elke Neu,
Carsten Arend,
Felix Guldner,
Elke Gross,
Christian Hepp,
David Steinmetz,
Elisabeth Zscherpel,
Slimane Ghodbane,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Yuejiang Liang,
Anke Krueger,
Christoph Becher
Abstract:
We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic…
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We report on the production of nanodiamonds (NDs) with 70-80 nm size via bead assisted sonic disintegration (BASD) of a polycrystalline chemical vapor deposition (CVD) film. The NDs display high crystalline quality as well as intense narrowband (7 nm) room temperature luminescence at 738 nm due to in situ incorporated silicon vacancy (SiV) centers. The fluorescence properties at room and cryogenic temperatures indicate that the NDs are, depending on preparation, applicable as single photon sources or as fluorescence labels.
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Submitted 24 May, 2011; v1 submitted 20 April, 2011;
originally announced April 2011.
