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Current-induced brightening of vacancy-related emitters in hexagonal boron nitride
Authors:
Corinne Steiner,
Rebecca Rahmel,
Frank Volmer,
Rika Windisch,
Lars H. Janssen,
Patricia Pesch,
Kenji Watanabe,
Takashi Taniguchi,
Florian Libisch,
Bernd Beschoten,
Christoph Stampfer,
Annika Kurzmann
Abstract:
We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. A…
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We perform photoluminescence measurements on vacancy-related emitters in hexagonal boron nitride (hBN) that are notorious for their low quantum yields. The gating of these emitters via few-layer graphene electrodes reveals a reproducible, gate-dependent brightening of the emitter, which coincides with a change in the direction of the simultaneously measured leakage current across the hBN layers. At the same time, we observe that the relative increase of the brightening effect scales linearly with the intensity of the excitation laser. Both observations can be explained in terms of a photo-assisted electroluminescence effect. Interestingly, emitters can also show the opposite behavior, i.e. a decrease in emitter intensity that depends on the gate leakage current. We explain these two opposing behaviors with different concentrations of donor and acceptor states in the hBN and show that precise control of the doping of hBN is necessary to gain control over the brightness of vacancy-related emitters by electrical means. Our findings contribute to a deeper understanding of vacancy-related defects in hBN that is necessary to make use of their potential for quantum information processing.
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Submitted 25 February, 2025; v1 submitted 21 November, 2024;
originally announced November 2024.
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Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
Authors:
E. Icking,
L. Banszerus,
F. Wörtche,
F. Volmer,
P. Schmidt,
C. Steiner,
S. Engels,
J. Hesselmann,
M. Goldsche,
K. Watanabe,
T. Taniguchi,
C. Volk,
B. Beschoten,
C. Stampfer
Abstract:
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first…
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The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first evidence of the tunable gap was already found ten years ago, it took until recent to fabricate sufficiently clean heterostructures where the electrically induced gap could be used to fully suppress transport or confine charge carriers. Here, we present a detailed study of the tunable band gap in gated bilayer graphene characterized by temperature-activated transport and finite-bias spectroscopy measurements. The latter method allows comparing different gate materials and device technologies, which directly affects the disorder potential in bilayer graphene. We show that graphite-gated bilayer graphene exhibits extremely low disorder and as good as no subgap states resulting in ultraclean tunable band gaps up to 120 meV. The size of the band gaps are in good agreement with theory and allow complete current suppression making a wide range of semiconductor applications possible.
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Submitted 7 July, 2022; v1 submitted 4 June, 2022;
originally announced June 2022.
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Probing two-electron multiplets in bilayer graphene quantum dots
Authors:
Samuel Möller,
Luca Banszerus,
Angelika Knothe,
Corinne Steiner,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Leonid Glazman,
Vladimir Fal'ko,
Christian Volk,
Christoph Stampfer
Abstract:
We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbi…
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We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG.
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Submitted 10 January, 2022; v1 submitted 15 June, 2021;
originally announced June 2021.
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Spin-valley coupling in single-electron bilayer graphene quantum dots
Authors:
Luca Banszerus,
Samuel Möller,
Corinne Steiner,
Eike Icking,
Stefan Trellenkamp,
Florian Lentz,
Kenji Watanabe,
Takashi Taniguchi,
Christian Volk,
Christoph Stampfer
Abstract:
Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum…
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Understanding how the electron spin is coupled to orbital degrees of freedom, such as a valley degree of freedom in solid-state systems is central to applications in spin-based electronics and quantum computation. Recent developments in the preparation of electrostatically-confined quantum dots in gapped bilayer graphene (BLG) enables to study the low-energy single-electron spectra in BLG quantum dots, which is crucial for potential spin and spin-valley qubit operations. Here, we present the observation of the spin-valley coupling in a bilayer graphene quantum dot in the single-electron regime. By making use of a highly-tunable double quantum dot device we achieve an energy resolution allowing us to resolve the lifting of the fourfold spin and valley degeneracy by a Kane-Mele type spin-orbit coupling of $\approx 65~μ$eV. Also, we find an upper limit of a potentially disorder-induced mixing of the $K$ and $K'$ states below $20~μ$eV.
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Submitted 19 June, 2021; v1 submitted 8 March, 2021;
originally announced March 2021.
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Dispersive sensing of charge states in a bilayer graphene quantum dot
Authors:
Luca Banszerus,
Samuel Möller,
Eike Icking,
Corinne Steiner,
Daniel Neumaier,
Martin Otto,
Kenji Watanabe,
Takashi Taniguchi,
Christian Volk,
Christoph Stampfer
Abstract:
We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate…
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We demonstrate dispersive readout of individual charge states in a gate-defined few-electron quantum dot in bilayer graphene. We employ a radio frequency reflectometry circuit, where an LC resonator with a resonance frequency close to 280 MHz is directly coupled to an ohmic contact of the quantum dot device. The detection scheme based on changes in the quantum capacitance operates over a wide gate-voltage range and allows to probe excited states down to the single-electron regime. Crucially, the presented sensing technique avoids the use of an additional, capacitively coupled quantum device such as a quantum point contact or single electron transistor, making dispersive sensing particularly interesting for gate-defined graphene quantum dots.
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Submitted 13 February, 2021; v1 submitted 11 December, 2020;
originally announced December 2020.
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Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films
Authors:
Kane L Scipioni,
Zhenyu Wang,
Yulia Maximenko,
Ferhat Katmis,
Charlie Steiner,
Vidya Madhavan
Abstract:
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surfa…
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Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surface currents and the quantum anomalous Hall effect. Previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies with no consensus. In this work, we use scanning tunneling microscopy and Landau level spectroscopy, in combination with X-ray photoemission spectroscopy to isolate the effects of growth factors such as temperature and composition, and to provide a microscopic picture of the role that disorder and composition play in determining the carrier density of epitaxially grown (Bi,Sb)$_2$Te$_3$ thin films. Using Landau level spectroscopy, we determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\sim 0.7$. However, we find that the post- growth annealing temperature can have a drastic impact on microscopic structure as well as carrier density. In particular, we find that when films are post-growth annealed at high temperature, better crystallinity and surface roughness are achieved; but this also produces a larger Te defect density, adding n-type carriers. This work provides key information necessary for optimizing thin film quality in this fundamentally and technologically important class of materials.
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Submitted 26 September, 2017;
originally announced September 2017.
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Coherent exciton dynamics in supramolecular light-harvesting nanotubes revealed by ultrafast quantum process tomography
Authors:
Joel Yuen-Zhou,
Dylan H. Arias,
Dorthe M. Eisele,
Colby P. Steiner,
Jacob J. Krich,
Moungi Bawendi,
Keith A. Nelson,
Alán Aspuru-Guzik
Abstract:
Long-lived exciton coherences have been recently observed in photosynthetic complexes via ultrafast spectroscopy, opening exciting possibilities for the study and design of coherent exciton transport. Yet, ambiguity in the spectroscopic signals has led to arguments for interpreting them in terms of the exciton dynamics, demanding more stringent tests. We propose a novel strategy, Quantum Process T…
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Long-lived exciton coherences have been recently observed in photosynthetic complexes via ultrafast spectroscopy, opening exciting possibilities for the study and design of coherent exciton transport. Yet, ambiguity in the spectroscopic signals has led to arguments for interpreting them in terms of the exciton dynamics, demanding more stringent tests. We propose a novel strategy, Quantum Process Tomography (QPT) for ultrafast spectroscopy, to reconstruct the evolving quantum state of excitons in double-walled supramolecular light-harvesting nanotubes at room temperature. The protocol calls for eight transient grating experiments with varied pulse spectra. Our analysis reveals unidirectional energy transfer from the outer to the inner wall excitons, absence of nonsecular processes, and an unexpected coherence between those two states lasting about 150 femtoseconds, indicating weak electronic coupling between the walls. Our work constitutes the first experimental QPT in a 'warm' and complex system, and provides an elegant scheme to maximize information from ultrafast spectroscopy experiments.
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Submitted 19 August, 2013;
originally announced August 2013.
