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Buried unstrained Ge channels: a lattice-matched platform for quantum technology
Authors:
Davide Costa,
Karina Hudson,
Patrick Del Vecchio,
Lucas E. A. Stehouwer,
Alberto Tosato,
Davide Degli Esposti,
Mario Lodari,
Stefano Bosco,
Giordano Scappucci
Abstract:
Ge and Si strained quantum wells have enabled the most advanced spin-qubit quantum processors, but they are deposited on defective, metamorphic SiGe substrates, which may impact device performance and scaling. Here we introduce an alternative platform, based on a heterojunction between unstrained Ge and a strained SiGe barrier, which is lattice-matched to a Ge substrate. In a structure with a 52-n…
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Ge and Si strained quantum wells have enabled the most advanced spin-qubit quantum processors, but they are deposited on defective, metamorphic SiGe substrates, which may impact device performance and scaling. Here we introduce an alternative platform, based on a heterojunction between unstrained Ge and a strained SiGe barrier, which is lattice-matched to a Ge substrate. In a structure with a 52-nm-thick strained SiGe barrier, we demonstrate a low-disorder two-dimensional hole gas with a high-mobility of 1.33$\times$10$^5$ cm$^2$/Vs and a low percolation density of 1.4(1)$\times$10$^1$$^0$ cm$^-$$^2$. Quantum transport measurements show that confined holes have a strong density-dependent in-plane effective mass and out-of-plane $g$-factor, pointing to a significant heavy-hole--light-hole mixing in agreement with theory. The expected strong spin-orbit interaction, possibility of isotopic purification, and ability to host superconducting pairing correlations make this platform appealing for fast quantum hardware and hybrid quantum systems.
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Submitted 6 June, 2025; v1 submitted 5 June, 2025;
originally announced June 2025.
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Engineering Ge profiles in Si/SiGe heterostructures for increased valley splitting
Authors:
Lucas E. A. Stehouwer,
Merrit P. Losert,
Maia Rigot,
Davide Degli Esposti,
Sara Martí-Sánchez,
Maximillian Rimbach-Russ,
Jordi Arbiol,
Mark Friesen,
Giordano Scappucci
Abstract:
Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically, here we explore an alternative approach to enhance the valley splitting on average. We grow increasingly thinner quantum wells with broad interfaces to control…
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Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically, here we explore an alternative approach to enhance the valley splitting on average. We grow increasingly thinner quantum wells with broad interfaces to controllably increase the overlap of the electron wave function with Ge atoms. In these quantum wells, comprehensive quantum Hall measurements of two-dimensional electron gases reveal a linear correlation between valley splitting and disorder. Benchmarked against quantum wells with sharp interfaces, we demonstrate enhanced valley splitting while maintaining a low-disorder potential environment. Simulations using the experimental Ge concentration profiles predict an average valley splitting in quantum dots that matches the enhancement observed in two-dimensional systems. Our results motivate the experimental realization of quantum dot spin qubits in these heterostructures.
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Submitted 28 May, 2025;
originally announced May 2025.
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QARPET: A Crossbar Chip for Benchmarking Semiconductor Spin Qubits
Authors:
Alberto Tosato,
Asser Elsayed,
Federico Poggiali,
Lucas Stehouwer,
Davide Costa,
Karina Hudson,
Davide Degli Esposti,
Giordano Scappucci
Abstract:
Large-scale integration of semiconductor spin qubits into industrial quantum processors hinges on the ability to characterize the performance of quantum components at scale. While the semiconductor industry has addressed scalable testing for transistors using device matrix arrays, extending this approach to quantum dot spin qubits is challenged by their operation at sub-kelvin temperatures, in the…
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Large-scale integration of semiconductor spin qubits into industrial quantum processors hinges on the ability to characterize the performance of quantum components at scale. While the semiconductor industry has addressed scalable testing for transistors using device matrix arrays, extending this approach to quantum dot spin qubits is challenged by their operation at sub-kelvin temperatures, in the presence of magnetic fields, and by the use of radio-frequency signals. Here, we present QARPET (Qubit-Array Research Platform for Engineering and Testing), a scalable architecture for characterizing spin qubits using a quantum dot crossbar array with sublinear scaling of interconnects. The crossbar features tightly pitched (1 μm), individually addressable spin qubit tiles and is implemented in planar germanium, by fabricating a large device with the potential to host 1058 hole spin qubits. We focus our measurements on a patch of 40 tiles and demonstrate key device functionality at millikelvin temperature including unique tile addressability, threshold voltage and charge noise statistics, and characterisation of hole spin qubits and their coherence times in a single tile. These demonstrations pave the way for a new generation of quantum devices designed for the statistical characterisation of spin qubits and for developing automated routines for quantum dot tuning and spin qubit operation.
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Submitted 7 April, 2025;
originally announced April 2025.
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A two-dimensional 10-qubit array in germanium with robust and localised qubit control
Authors:
Valentin John,
Cécile X. Yu,
Barnaby van Straaten,
Esteban A. Rodríguez-Mena,
Mauricio Rodríguez,
Stefan Oosterhout,
Lucas E. A. Stehouwer,
Giordano Scappucci,
Stefano Bosco,
Maximilian Rimbach-Russ,
Yann-Michel Niquet,
Francesco Borsoi,
Menno Veldhorst
Abstract:
Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabricati…
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Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for \textit{in situ} electric fast and high-fidelity qubit gates. However, the interaction also causes a large qubit variability due to strong g-tensor anisotropy and dependence on the environment. Here, we leverage advances in material growth, device fabrication, and qubit control to realise a two-dimensional 10-spin qubit array, with qubits coupled up to four neighbours that can be controlled with high fidelity. By exploring the large parameter space of gate voltages and quantum dot occupancies, we demonstrate that plunger gate driving in the three-hole occupation enhances electric-dipole spin resonance (EDSR), creating a highly localised qubit drive. Our findings, confirmed with analytical and numerical models, highlight the crucial role of intradot Coulomb interaction and magnetic field direction. Furthermore, the ability to engineer qubits for robust control is a key asset for further scaling.
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Submitted 17 February, 2025; v1 submitted 20 December, 2024;
originally announced December 2024.
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Modular Autonomous Virtualization System for Two-Dimensional Semiconductor Quantum Dot Arrays
Authors:
Anantha S. Rao,
Donovan Buterakos,
Barnaby van Straaten,
Valentin John,
Cécile X. Yu,
Stefan D. Oosterhout,
Lucas Stehouwer,
Giordano Scappucci,
Menno Veldhorst,
Francesco Borsoi,
Justyna P. Zwolak
Abstract:
Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders indep…
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Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS) -- a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low- and high-tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.
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Submitted 6 May, 2025; v1 submitted 19 November, 2024;
originally announced November 2024.
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Exploiting epitaxial strained germanium for scaling low noise spin qubits at the micron-scale
Authors:
Lucas E. A. Stehouwer,
Cécile X. Yu,
Barnaby van Straaten,
Alberto Tosato,
Valentin John,
Davide Degli Esposti,
Asser Elsayed,
Davide Costa,
Stefan D. Oosterhout,
Nico W. Hendrickx,
Menno Veldhorst,
Francesco Borsoi,
Giordano Scappucci
Abstract:
Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale dev…
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Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here, we exploit low-disorder epitaxial strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micron-scale devices comprising of up to ten quantum dots and four rf-charge sensors arranged in a two-dimensional array. We demonstrate an average charge noise of $\sqrt{S_{0}}=0.3(1)$ $μ\mathrm{eV}/\sqrt{\mathrm{Hz}}$ at 1 Hz across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish hole-spin qubit control in these heterostructures and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with $^{73}$Ge spinful isotopes and identify coherence modulations associated with the interaction with the $^{29}$Si nuclear spin bath near the Ge quantum well. We estimate an integrated hyperfine noise amplitude $σ_f$ of 180(8) kHz from $^{73}$Ge and of 47(5) kHz from $^{29}$Si, underscoring the need for full isotopic purification of the qubit host environment.
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Submitted 17 February, 2025; v1 submitted 18 November, 2024;
originally announced November 2024.
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Weak topological phases in the presence of interactions
Authors:
Omar Antolín Camarena,
Arun Debray,
Cameron Krulewski,
Natalia Pacheco-Tallaj,
Daniel Sheinbaum,
Luuk Stehouwer
Abstract:
We investigate the stability of weak symmetry-protected topological phases (SPTs) in the presence of short-range interactions, focusing on the tenfold way classification. Using Atiyah's Real $\mathit{KR}$-theory and Anderson-dualized bordism, we classify free and interacting weak phases across all Altland-Zirnbauer symmetry classes in low dimensions. Extending the free-to-interacting map of Freed-…
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We investigate the stability of weak symmetry-protected topological phases (SPTs) in the presence of short-range interactions, focusing on the tenfold way classification. Using Atiyah's Real $\mathit{KR}$-theory and Anderson-dualized bordism, we classify free and interacting weak phases across all Altland-Zirnbauer symmetry classes in low dimensions. Extending the free-to-interacting map of Freed-Hopkins, we mathematically compute how the behavior of free weak SPTs changes when interactions are introduced as well as predict intrinsically-interacting weak phases in certain classes. Our mathematical techniques involve T-duality and the James splitting of the torus. Our results provide a mathematical framework for understanding the persistence of weak SPTs under interactions, with potential implications for experimental and theoretical studies of these phases.
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Submitted 13 October, 2024;
originally announced October 2024.
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Reducing disorder in Ge quantum wells by using thick SiGe barriers
Authors:
Davide Costa,
Lucas E. A. Stehouwer,
Yi Huang,
Sara Martí-Sánchez,
Davide Degli Esposti,
Jordi Arbiol,
Giordano Scappucci
Abstract:
We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors we measure an average maximum mobility of $(4.4 \pm 0.2) \times 10^{6}~\mathrm{cm^2/Vs}$ at a saturation density of…
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We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field effect transistors we measure an average maximum mobility of $(4.4 \pm 0.2) \times 10^{6}~\mathrm{cm^2/Vs}$ at a saturation density of $(1.72 \pm 0.03) \times 10^{11}~\mathrm{cm^{-2}}$, corresponding to a long mean free path of $(30 \pm 1)~\mathrm{μm}$. The highest measured mobility is $4.68 \times 10^{6}~\mathrm{cm^2/Vs}$. We identify uniform background impurities and interface roughness as the dominant scattering mechanisms limiting mobility in a representative device, and we evaluate a percolation-induced critical density of $(4.5 \pm 0.1)\times 10^{9} ~\mathrm{cm^{-2}}$. This low-disorder heterostructure, according to simulations, may support the electrostatic confinement of holes in gate-defined quantum dots.
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Submitted 21 November, 2024; v1 submitted 4 October, 2024;
originally announced October 2024.
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A quantum dot in germanium proximitized by a superconductor
Authors:
Lazar Lakic,
William I. L. Lawrie,
David van Driel,
Lucas E. A. Stehouwer,
Yao Su,
Menno Veldhorst,
Giordano Scappucci,
Ferdinand Kuemmeth,
Anasua Chatterjee
Abstract:
Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor…
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Planar germanium quantum wells have recently been shown to host hard-gapped superconductivity. Additionally, quantum dot spin qubits in germanium are well-suited for quantum information processing, with isotopic purification to a nuclear spin-free material expected to yield long coherence times. Therefore, as one of the few group IV materials with the potential to host superconductor-semiconductor hybrid devices, proximitized quantum dots in germanium is a compelling platform to achieve and combine topological superconductivity with existing and novel qubit modalities. Here we demonstrate a quantum dot (QD) in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtGeSi) superconducting lead (SC), forming a SC-QD-SC junction. We show tunability of the QD-SC coupling strength, as well as gate control of the ratio of charging energy and the induced gap. We further exploit this tunability by exhibiting control of the ground state of the system between even and odd parity. Furthermore, we characterize the critical magnetic field strengths, finding a critical out-of-plane field of 0.90(4). Finally we explore sub-gap spin splitting in the device, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu-Shiba-Rusinov limit. The demonstration of controllable proximitization at the nanoscale of a germanium quantum dot opens up the physics of novel spin and superconducting qubits, and Josephson junction arrays in a group IV material.
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Submitted 30 November, 2024; v1 submitted 3 May, 2024;
originally announced May 2024.
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Operating semiconductor quantum processors with hopping spins
Authors:
Chien-An Wang,
Valentin John,
Hanifa Tidjani,
Cécile X. Yu,
Alexander S. Ivlev,
Corentin Déprez,
Floor van Riggelen-Doelman,
Benjamin D. Woods,
Nico W. Hendrickx,
William I. L. Lawrie,
Lucas E. A. Stehouwer,
Stefan D. Oosterhout,
Amir Sammak,
Mark Friesen,
Giordano Scappucci,
Sander L. de Snoo,
Maximilian Rimbach-Russ,
Francesco Borsoi,
Menno Veldhorst
Abstract:
Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quant…
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Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. While resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit crosstalk and heating. Here, we show that by engineering the hopping of spins between quantum dots with site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97\%, coherent shuttling fidelities of 99.992\% per hop, and a two-qubit gate fidelity of 99.3\%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers.
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Submitted 15 October, 2024; v1 submitted 28 February, 2024;
originally announced February 2024.
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Gate modulation of the hole singlet-triplet qubit frequency in germanium
Authors:
John Rooney,
Zhentao Luo,
Lucas E. A. Stehouwer,
Giordano Scappucci,
Menno Veldhorst,
Hong-Wen Jiang
Abstract:
Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand th…
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Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent $g$-tensors. While this characteristic of the $g$-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these $g$-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a $S-T\_$ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a $g$-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We attribute the strong dependence to a variable strain profile in our device. This work not only reinforces previous findings that site-dependent $g$-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these $g$-tensors have to the electrostatic confinement of the quantum dot.
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Submitted 16 November, 2023;
originally announced November 2023.
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Low disorder and high valley splitting in silicon
Authors:
Davide Degli Esposti,
Lucas E. A. Stehouwer,
Önder Gül,
Nodar Samkharadze,
Corentin Déprez,
Marcel Meyer,
Ilja N. Meijer,
Larysa Tryputen,
Saurabh Karwal,
Marc Botifoll,
Jordi Arbiol,
Sergey V. Amitonov,
Lieven M. K. Vandersypen,
Amir Sammak,
Menno Veldhorst,
Giordano Scappucci
Abstract:
The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio…
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The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.
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Submitted 2 February, 2024; v1 submitted 6 September, 2023;
originally announced September 2023.
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A vertical gate-defined double quantum dot in a strained germanium double quantum well
Authors:
Hanifa Tidjani,
Alberto Tosato,
Alexander Ivlev,
Corentin Déprez,
Stefan Oosterhout,
Lucas Stehouwer,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst
Abstract:
Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quant…
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Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.
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Submitted 24 May, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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Germanium wafers for strained quantum wells with low disorder
Authors:
Lucas E. A. Stehouwer,
Alberto Tosato,
Davide Degli Esposti,
Davide Costa,
Menno Veldhorst,
Amir Sammak,
Giordano Scappucci
Abstract:
We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated…
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We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of (6$\pm$1)$\times$10$^5$ cm$^{-2}$, nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of (1.22$\pm$0.03)$\times$10$^{10}$ cm$^{-2}$, and an average maximum mobility of (3.4$\pm$0.1)$\times$10$^{6}$ cm$^2$/Vs and quantum mobility of (8.4$\pm$0.5)$\times$10$^{4}$ cm$^2$/Vs when the hole density in the quantum well is saturated to (1.65$\pm$0.02)$\times$10$^{11}$ cm$^{-2}$. We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits and their integration into larger quantum processors.
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Submitted 22 August, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Sebastian Koelling,
Lucas E. A. Stehouwer,
Anne-Marije J. Zwerver,
Stephan G. J. Philips,
Mateusz T. Mądzik,
Xiao Xue,
Guoji Zheng,
Mario Lodari,
Sergey V. Amitonov,
Nodar Samkharadze,
Amir Sammak,
Lieven M. K. Vandersypen,
Rajib Rahman,
Susan N. Coppersmith,
Oussama Moutanabbir,
Mark Friesen,
Giordano Scappucci
Abstract:
Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor…
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Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.
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Submitted 1 December, 2022; v1 submitted 17 December, 2021;
originally announced December 2021.
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Interacting SPT phases are not Morita invariant
Authors:
Luuk Stehouwer
Abstract:
The tenfold way provides a strong organizing principle for invertible topological phases of matter. Mathematically, it is intimately connected with $K$-theory via the fact that there exist exactly ten Morita classes of simple real superalgebras. This connection is physically unsurprising, since weakly interacting topological phases are classified by $K$-theory. We argue that when strong interactio…
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The tenfold way provides a strong organizing principle for invertible topological phases of matter. Mathematically, it is intimately connected with $K$-theory via the fact that there exist exactly ten Morita classes of simple real superalgebras. This connection is physically unsurprising, since weakly interacting topological phases are classified by $K$-theory. We argue that when strong interactions are present, care has to be taken when formulating the exact ten symmetry groups present in the tenfold way table. We study this phenomenon in the example of class D by providing two possible mathematical interpretations of a class D symmetry. These two interpretations of class D result in Morita-equivalent but different symmetry groups. As $K$-theory cannot distinguish Morita-equivalent protecting symmetry groups, the two approaches lead to the same classification of topological phases on the weakly interacting side. However, we show that these two different symmetry groups yield different interacting classifications in spacetime dimension 2+1. We use the approach to interacting topological phases using bordism groups, reducing the relevant classification problem to a spectral sequence computation.
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Submitted 5 August, 2022; v1 submitted 14 October, 2021;
originally announced October 2021.
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Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Authors:
Brian Paquelet Wuetz,
Merritt P. Losert,
Alberto Tosato,
Mario Lodari,
Peter L. Bavdaz,
Lucas Stehouwer,
Payam Amin,
James S. Clarke,
Susan N. Coppersmith,
Amir Sammak,
Menno Veldhorst,
Mark Friesen,
Giordano Scappucci
Abstract:
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases…
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We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces.
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Submitted 29 September, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Classification of crystalline topological insulators through K-theory
Authors:
Luuk Stehouwer,
Jan de Boer,
Jorrit Kruthoff,
Hessel Posthuma
Abstract:
Topological phases for free fermions in systems with crystal symmetry are classified by the topology of the valence band viewed as a vector bundle over the Brillouin zone. Additional symmetries, such as crystal symmetries which act non-trivially on the Brillouin zone, or time-reversal symmetry, endow the vector bundle with extra structure. These vector bundles are classified by a suitable version…
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Topological phases for free fermions in systems with crystal symmetry are classified by the topology of the valence band viewed as a vector bundle over the Brillouin zone. Additional symmetries, such as crystal symmetries which act non-trivially on the Brillouin zone, or time-reversal symmetry, endow the vector bundle with extra structure. These vector bundles are classified by a suitable version of K-theory. While relatively easy to define, these K-theory groups are notoriously hard to compute in explicit examples. In this paper we describe in detail how one can compute these K-theory groups starting with a decomposition of the Brillouin zone in terms of simple submanifolds on which the symmetries act nicely. The main mathematical tool is the Atiyah-Hirzebruch spectral sequence associated to such a decomposition, which will not only yield the explicit result for several crystal symmetries, but also sheds light on the origin of the topological invariants. This extends results that have appeared in the literature so far. We also describe examples in which this approach fails to directly yield a conclusive answer, and discuss various open problems and directions for future research.
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Submitted 11 December, 2018; v1 submitted 6 November, 2018;
originally announced November 2018.
