Showing 1–1 of 1 results for author: Stampe, P A

First order transition from correlated electron semiconductor to ferromagnetic metal in single crystalline FeSi1-xGex

Authors: S. Yeo, S. Nakatsuji, A. D. Bianchi, P. Schlottmann, Z. Fisk, L. Balicas, P. A. Stampe, R. J. Kennedy

Abstract: The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator.… ▽ More The phase diagram of FeSi1-xGex, obtained from magnetic, thermal and transport measurements on single crystals, shows a first-order transition from a correlated electron semiconductor to a ferromagnetic metal at a critical concentration, x ~ 0.25. The gap of the insulating phase strongly decreases with x. The specific heat coefficient appears to track the density of states of a Kondo insulator. The phase diagram is consistent with a correlation induced insulator-metal transition in conjunction with disorder on the Si/Ge ligand site. △ Less

Submitted 24 February, 2003; originally announced February 2003.