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Magnetism of noncolinear amorphous DyCo3 and TbCo3 thin films
Authors:
Zexiang Hu,
Ajay Jha,
Katarzyna Siewierska,
Ross Smith,
Karsten Rode,
Plamen Stamenov,
J. M. D. Coey
Abstract:
The magnetization of amorphous DyCo3 and TbCo3 is studied by magnetometry, anomalous Hall effect and magneto-optic Kerr effect to understand the temperature-dependent magnetic structure. A square magnetic hysteresis loop with perpendicular magnetic anisotropy and coercivity that reaches 3.5 T in the vicinity of the compensation temperature is seen in thin films. An anhysteretic soft component, see…
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The magnetization of amorphous DyCo3 and TbCo3 is studied by magnetometry, anomalous Hall effect and magneto-optic Kerr effect to understand the temperature-dependent magnetic structure. A square magnetic hysteresis loop with perpendicular magnetic anisotropy and coercivity that reaches 3.5 T in the vicinity of the compensation temperature is seen in thin films. An anhysteretic soft component, seen in the magnetization of some films but not in their Hall or Kerr loops is an artefact due to sputter-deposition on the sides of the substrate. The temperature-dependence of the net rare earth moment from 4-300K is deduced, using the cobalt moment in amorphous YxCo1-x. The single-ion anisotropy of the quadrupole moments of the 4f atoms in the randomly-oriented local electrostatic field gradient overcomes their exchange coupling to the cobalt subnetwork, resulting in a sperimagnetic ground state where spins of the noncollinear rare-earth subnetwork are modelled by a distribution of rare earth moments within a cone whose axis is antiparallel to the ferromagnetic axis z of the cobalt subnetwork. The reduced magnetization (Jz)/J at T=0 is calculated from an atomic Hamiltonian as a function of the ratio of anisotropy to exchange energy per rare-earth atom for a range of angles between the local anisotropy axis and -z and then averaged over all directions in a hemisphere. The experimental and calculated values of (J-z)/J are close to 0.7 at low temperature for both Dy and Tb. On increasing temperature, the magnitude of the rare earth moment and the local random anisotropy that creates the cone are reduced; the cone closes and the structure approaches collinear ferrimagnetism well above ambient temperature. An asymmetric spin flop of the exchange-coupled subnetworks appears in the vicinity of the magnetization compensation temperatures of 175K for amorphous Dy0.25Co0.75 and 200 K for amorphous TbCo3.
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Submitted 19 December, 2023;
originally announced December 2023.
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Magnetism, transport and atomic structure of amorphous binary YxCo1-x alloys
Authors:
Zexiang Hu,
Jean Besbas,
Katarzyna Siewierska,
Ross Smith,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Sputtered thin films of binary YxCo1-x with 0 < x < 0.54 and thickness 15 nm are investigated to help understand the ferromagnetism of cobalt in amorphous rare-earth cobalt alloys. The magnetic moment per cobalt falls to zero at x0 = 0.50, where the appearance of magnetism is marked by a para-process with a dimensionless susceptibility of up to 0.015. All films are magnetically soft, with densitie…
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Sputtered thin films of binary YxCo1-x with 0 < x < 0.54 and thickness 15 nm are investigated to help understand the ferromagnetism of cobalt in amorphous rare-earth cobalt alloys. The magnetic moment per cobalt falls to zero at x0 = 0.50, where the appearance of magnetism is marked by a para-process with a dimensionless susceptibility of up to 0.015. All films are magnetically soft, with densities that fall between those of crystalline Y-Co intermetallic compounds and the density of a relaxed 10,000-atom binary random close-packed model of hard spheres with an Y:Co volume ratio of 3:1, where the packing fractions for all films lies in a narrow range around 0.633 and Co is coordinated by 3.2 Co and 3.2 Y atoms at x = 0.5. All films with x < 0.4 exhibit in-plane shape anisotropy that is about six times as great as an intrinsic perpendicular component. Average cobalt spin and orbital moments obtained by X-ray magnetic circular dichroism were 1.31 and 0.32 Bohr magnetons, respectively for amorphous Y0.25Co0.75. Strong local anisotropy is associated with the large cobalt orbital moment, but there is little influence of anisotropy on the ferromagnetic order because of exchange averaging. The Hall effect and magnetoresistance are modelled in terms of effective uniform rotation of the magnetization, with spontaneous and band contributions. Amorphous YxCo1-x is contrasted with amorphous YxFe1-x, which exhibits random noncollinear magnetic order that is very sensitive to the film density.
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Submitted 29 September, 2023;
originally announced September 2023.
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Quasi-static magnetization dynamics in a compensated ferrimagnetic half-metal -- Mn$_2$Ru$_x$Ga
Authors:
Ajay Jha,
Simon Lenne,
Gwenael Atcheson,
Karsten Rode,
J. M. D. Coey,
Plamen Stamenov
Abstract:
Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain accurate results. In this study, we delve deeper into the examination of magnetic anisotropy and quasi-static magnetization dynamics in \mrg\,(MRG) thin films,…
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Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain accurate results. In this study, we delve deeper into the examination of magnetic anisotropy and quasi-static magnetization dynamics in \mrg\,(MRG) thin films, as an example of a compensated ferrimagnetic half-metal, by employing anomalous Hall effect measurements within a tetragonal crystal lattice system. Our research proposes an innovative approach to accurately determine the complete set of anisotropy constants of these MRG thin films. To achieve this, we perform anomalous Hall voltage curve fitting, using torque models under the macrospin approximation, which allow us to obtain out-of-plane anisotropy constants $K_1=4.0\times10^4$ J m$^{-3}$ ($K_1/M=0.655$\,T) and $K_2=2.54\times10^4$ J m$^{-3}$ ($K_2/M=0.416$\,T), along with a weaker in-plane anisotropy constant $K_3=3.48\times10^3$ J m$^{-3}$ ($K_3/M=0.057$\,T). By additionally employing first-order reversal curves (FORC) and classical Preisach hysteresis (hysterons) models, we are able to validate the efficacy of the macrospin model in capturing the magnetic behavior of MRG thin films. Furthermore, our investigation substantiates that the complex quasi-static magnetization dynamics of MRG thin films can be effectively modelled using a combination of hysteronic and torque models. This approach facilitates the exploration of both linear and non-linear quasi-static magnetization dynamics, in the presence of external magnetic field and/or current-induced effective fields, generated by the spin-orbit torque and spin transfer torque mechanisms.
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Submitted 12 July, 2023;
originally announced July 2023.
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Phonon and magnon jets above the critical current in nanowires with planar domain walls
Authors:
Maria Stamenova,
Plamen Stamenov,
Tchavdar Todorov
Abstract:
We show through non-equilibrium non-adiabatic electron-spin-lattice simulations that above a critical current in magnetic atomic wires with a narrow domain wall (DW), a couple of atomic spaces in width, the electron flow triggers violent stimulated emission of phonons and magnons with an almost complete conversion of the incident electron momentum flux into a phonon and magnon flux. Just below the…
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We show through non-equilibrium non-adiabatic electron-spin-lattice simulations that above a critical current in magnetic atomic wires with a narrow domain wall (DW), a couple of atomic spaces in width, the electron flow triggers violent stimulated emission of phonons and magnons with an almost complete conversion of the incident electron momentum flux into a phonon and magnon flux. Just below the critical levels of the current flow, the DW achieves maximal velocity of about $3\times 10^{4}$ m/s, entering a strongly non-adiabatic regime of DW propagation, followed by a breakdown at higher biases. Above this threshold a further increase of the current with the applied bias is impossible -- the electronic current suffers a heavy suppression and the DW stops. This poses a fundamental limit to the current densities attainable in atomic wires. At the same time it opens up an exciting way of generating the alternative quasi-particle currents, described above, once the requisite electronic-structure properties are met.
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Submitted 13 February, 2024; v1 submitted 22 March, 2023;
originally announced March 2023.
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Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn$_3$Ga and Mn$_3$Al
Authors:
Maria Stamenova,
Plamen Stamenov,
Nadjib Baadji
Abstract:
We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their tetragonal DO$_{22}$ phase. The former is a fully compensated half-metallic ferrimagnet, while the latter is a low-moment high-spin-polarisation ferrimagnet, bot…
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We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their tetragonal DO$_{22}$ phase. The former is a fully compensated half-metallic ferrimagnet, while the latter is a low-moment high-spin-polarisation ferrimagnet, both with a small lattice mismatch from MgO. In identical symmetric and asymmetric interface reconstructions across a 3-monolayer thick MgO barrier for both ferrimagets, the linear response (low-voltage) spin-transfer torque (STT) and tunneling magneto-resistance (TMR) effects are evaluated. A larger staggered in-plane STT is found in the Mn$_3$Ga case, while the STT in Mn$_3$Al vanishes quickly away from the interface (similarly to STT in ferromagnetic MTJs). The roles are reversed for the TMR, which is practically 100\% in the half-metallic Mn$_3$Al-based MTJs (using the conservative definition) as opposed to 60\% in the Mn$_3$Ga case. The weak dependence on the exact interface reconstruction would suggest Mn$_3$Ga-Mn$_3$Al solid solutions as a possible route towards optimal trade-off of STT and TMR in the low-bias, low-temperature transport regime.
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Submitted 19 January, 2023;
originally announced January 2023.
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CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties
Authors:
Jadupati Nag,
R. Venkatesh,
Ajay Jha,
Plamen Stamenov,
P. D. Babu,
Aftab Alam,
K. G. Suresh
Abstract:
Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses…
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Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses interesting spintronic and thermoelectric properties. Magnetization data reveal a weak ferri-/antiferro magnetic ordering at low temperatures, with only a very small moment $\sim$ 0.13 $μ_B$/f.u., attributed to the disorder. Transport results provide strong evidence of semimetallicity dominated by two-band conduction, while magnetoresistance data show a non-saturating, linear, positive, magnetoresistance. Spin polarization measurements using point-contact Andreev reflection spectra reveal a reasonably high spin polarization of $\sim$ 50\%, which matches fairly well with the simulated result. Furthermore, CoRuVSi shows a high thermopower value of $0.7$ $m Watt/ m-K^{2}$ at room temperature with the dominant contribution from the semimetallic bands, rendering it as a promising thermoelectric material as well. Our ab-initio simulation not only confirms a unique semimetallic feature, but also reveals that the band structure hosts a linear band crossing at $\sim$ -0.4 eV below the Fermi level incorporated by a band-inversion. In addition, the observed topological non-trivial features of the band structure is corroborated with the simulated Berry curvature, intrinsic anomalous Hall conductivity and the Fermi surface. The coexistence of many interesting properties relevant for spintronic, topological and thermoelectric applications in a single material is extremely rare and hence this study could promote a similar strategy to identify other potential materials belonging to same class.
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Submitted 14 January, 2023;
originally announced January 2023.
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Au4Mn, a localized ferromagnet with strong spin-orbit coupling, long-range ferromagnetic exchange and high Curie temperature
Authors:
Yangkun He,
Zsolt Gercsi,
Rui Zhang,
Yu Kang,
Yurii Skourski,
Lucy Prendeville1,
Orrie Larmour,
Jean Besbas,
Claudia Felser,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Metallic Mn-based alloys with a nearest-neighbor Mn-Mn distance greater than 0.4 nm exhibit large, well-localized magnetic moments. Here we investigate the magnetism of tetragonal Au4Mn with a Curie temperature of 385 K, where manganese has a spin moment of 4.1 muB and its orbital moment is quenched. Since 80% of the atoms are gold, the spin orbit interaction is strong and Au4Mn exhibits uniaxial…
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Metallic Mn-based alloys with a nearest-neighbor Mn-Mn distance greater than 0.4 nm exhibit large, well-localized magnetic moments. Here we investigate the magnetism of tetragonal Au4Mn with a Curie temperature of 385 K, where manganese has a spin moment of 4.1 muB and its orbital moment is quenched. Since 80% of the atoms are gold, the spin orbit interaction is strong and Au4Mn exhibits uniaxial magnetocrystalline anisotropy with surface maze domains at room temperature. The magnetic hardness parameter of 1.0 is sufficient to maintain the magnetization along the c-axis for a sample of any shape. Au also reduces the spin moment of Mn through 5d-3d orbital hybridization. An induced moment of 0.05 muB was found on Au under a pulsed field of 40 T. Density functional theory calculations indicate that the Mn-Mn exchange is mediated by spin-polarized gold 5d and 6p electrons. The distance-dependence shows that it is ferromagnetic or zero for the first ten shells of Mn neighbors out to 1.041 nm (64 atoms), and very weak and oscillatory thereafter.
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Submitted 25 October, 2022;
originally announced October 2022.
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Multiplexable frequency retuning of MKID arrays using their non-linear kinetic inductance
Authors:
Mario De Lucia,
Eoin Baldwin,
Gerhard Ulbricht,
Colm Bracken,
Plamen Stamenov,
Tom Ray
Abstract:
Microwave Kinetic Inductance Detector (MKID) arrays are currently being developed and deployed for astronomical applications in the visible and near infrared and for sub-millimetre astronomy. One of the main drawbacks of MKIDs is that large arrays would exhibit a pixel yield, the percentage of individually distinguishable pixels to the total number of pixels, of 75 - 80 %. Imperfections arising du…
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Microwave Kinetic Inductance Detector (MKID) arrays are currently being developed and deployed for astronomical applications in the visible and near infrared and for sub-millimetre astronomy. One of the main drawbacks of MKIDs is that large arrays would exhibit a pixel yield, the percentage of individually distinguishable pixels to the total number of pixels, of 75 - 80 %. Imperfections arising during the fabrication can induce an uncontrolled shift in the resonance frequency of individual resonators which can end up resonating at the same frequency of a different resonator. This makes a number of resonators indistinguishable and therefore unusable for imaging. This paper proposes an approach to individually re-tune the colliding resonators in order to remove the degeneracy and increase the number of MKIDs with unique resonant frequencies. The frequency re-tuning is achieved through a DC bias of the resonator, the kinetic inductance of a superconducting thin film is current dependent and its dependence is non linear. Even though this approach has been already proposed, an innovative pixel design, described in this paper, may solve two issues previously described in literature such as increased electromagnetic losses to the DC-bias line, and the multiplexibility of multiple resonators on a single feedline.
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Submitted 12 April, 2022;
originally announced April 2022.
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Single-pulse all-optical switching in amorphous Dy$_x$Co$_{1-x}\text{ }$ and Tb$_x$Co$_{1-x}$
Authors:
Zexiang Hu,
Jean Besbas,
Ross Smith,
Niclas Teichert,
Gwenael Atcheson,
Karsten Rode,
Plamen Stamenov,
J. M. D. Coey
Abstract:
Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have stron…
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Repeated uniform switching of the magnetization of thin films of ferrimagnetic amorphous Gd$_{x}$(FeCo)$_{1-x}$ in response to single fast laser pulses is well established. Here we report unusual toggle switching in thin films of sperimagnetic amorphous Dy$_x$Co$_{1-x}$ and Tb$_x$Co$_{1-x}$ with $\it{x} \simeq$ 0.25 irradiated with single 200 fs pulses of 800 nm laser light. The samples have strong local random anisotropy due to the non-S state rare earth. The compensation temperature of the films is $\le$ 180 K and their Curie temperature is $\simeq$ 500 K. They are mostly switched by the first pulse, and subsequent pulses lead to partial re-switching of a decreasing amount of the irradiated area, with a granular structure of submicron regions of switched and unswitched material. Individual switched domains about 700 nm in size are observed around the edge of the irradiated spots where the fluence is at the threshold for switching. Results are discussed in terms of a random anisotropy model where the ratio of local anisotropy to exchange is temperature dependent and close to the threshold for strong pinning.
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Submitted 29 November, 2021;
originally announced November 2021.
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Spin polarization and magnetotransport properties of systematically disordered $\mathrm{Fe}_{60}\mathrm{Al}_{40}$ thin films
Authors:
Kiril Borisov,
Jonathan Ehrler,
Ciaran Fowley,
Benedikt Eggert,
Heiko Wende,
Steffen Cornelius,
Kay Potzger,
Juergen Lindner,
Juergen Fassbender,
Rantej Bali,
Plamen Stamenov
Abstract:
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 n…
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We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of $B2$-ordered Fe$_{60}$Al$_{40}$ thin films under varying antisite disorder, induced by Ne$^{+}$-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 $\cdot$ 10$^{16}$ ions/cm$^2$ at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated Fe$_{60}$Al$_{40}$ a promising material for application in spin electronic devices.
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Submitted 30 April, 2021;
originally announced April 2021.
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Stability of Mn2RuxGa-based Multilayer Stacks
Authors:
Gwenael Atcheson,
Katarzyna Siewierska,
J. M. D. Coey,
Karsten Rode,
Plamen Stamenov
Abstract:
Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality…
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Perpendicular heterostructures based on a ferrimagnetic Mn2RuxGa (MRG) layer and a ferromagnetic Co/Pt multilayer were examined to understand the effects of different spacer layers (V, Mo, Hf, HfOx and TiN) on the interfaces with the magnetic electrodes, after annealing at 350 C. Loss of perpendicular anisotropy in MRG is strongly correlated with a reduction in the substrate-induced tetragonality due to relaxation of the crystal structure. In the absence of diffusion, strain and chemical ordering within MRG are correlated. The limited solubility of both Hf and Mo in MRG is a source of additional valence electrons, which results in an increase in compensation temperature Tcomp. This also stabilises perpendicular anisotropy, compensating for changes in strain and defect density. The reduction in squareness of the MRG hysteresis loop measured by anomalous Hall effect is <10 %, making it useful in active devices. Furthermore, a CoPt3 phase with (2 2 0) texture in the perpendicular Co/Pt free layer promoted by a Mo spacer layer is the only one that retains its perpendicular anisotropy on annealing.
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Submitted 20 September, 2021; v1 submitted 27 April, 2021;
originally announced April 2021.
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Magnetic reversal and pinning in a perpendicular zero moment half-metal
Authors:
Niclas Teichert,
Gwenael Atcheson,
Katarzyna Siewierska,
Marta Norah Sanz-Ortiz,
M. Venkatesan,
Karsten Rode,
Solveig Felton,
Plamen Stamenov,
JMD Coey
Abstract:
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in…
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Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to external fields, fast spin dynamics and rapid domain wall motion. From ferromagnets they inherit straightforward ways to read out the magnetic state, especially in compensated half metals, where electrons flow in only one spin channel. Here, we investigate domain structure in compensated half-metallic Mn2Ru0.5Ga films and assess their potential in domain wall motion-based spin-electronic devices. Our focus is on understanding and reducing domain wall pinning in unpatterned epitaxial thin films. Two modes of magnetic reversal, driven by nucleation or domain wall motion, are identified for different thin film deposition temperatures $(T_{dep})$. The magnetic aftereffect is analysed to extract activation volumes $(V^*)$, activation energies $(E_A)$, and their variation $(ΔE_A)$. The latter is decisive for the magnetic reversal regime, where domain wall motion dominated reversal (weak pinning) is found for $ΔE_A<0.2$ eV and nucleation dominated reversal (strong pinning) for $ΔE_A>0.5$ eV. A minimum $ΔE_A=28$ meV is found for $T_{dep}=290°$C. Prominent pinning sites are visualized by analysing virgin domain patterns after thermal demagnetization. In the sample investigated they have spacings of order 300 nm, which gives an upper limit of the track-width of spin-torque domain-wall motion-based devices.
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Submitted 17 December, 2020;
originally announced December 2020.
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Ultra-fast Double Pulse All-Optical Re-switching of a Ferrimagnet
Authors:
C. Banerjee,
K. Rode,
G. Atcheson,
S. Lenne,
P. Stamenov,
J. M. D. Coey,
J. Besbas
Abstract:
All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms…
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All-optical re-switching has been investigated in the half-metallic Heusler ferrimagnet Mn2Ru0.9Ga, where Mn atoms occupy two inequivalent sites in the XA-type structure. The effect of a second 200 fs 800 nm pump pulse that follows a first pulse, when both are above the threshold for switching, is studied as a function of t12, the time between them. The aims are to identify the physical mechanisms involved and to determine the minimum time needed for re-switching. The time trajectory of the switching process on a plot of sublattice angular momentum, S4a vs S4c, is in three stages; When t < 0.1 ps, the sublattice moments are rapidly disordered, but not destroyed, while conserving net angular momentum via optical spin-wave excitations. This leads to transient parallel alignment of the residual Mn spins in the first quadrant. The net angular momentum associated with the majority sublattice then flips in about 2 ps, and a fully-reversed ferrimagnetic state is then established via the spin-lattice interaction, which allows re-switching provided t12 > 10 ps.
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Submitted 12 December, 2020;
originally announced December 2020.
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Magnetic order and magneto-transport in half-metallic ferrimagnetic Mn$_y$Ru$_x$Ga thin films
Authors:
K. E. Siewierska,
G. Atcheson,
A. Jha,
K. Esien,
R. Smith,
S. Lenne,
N. Teichert,
J. O'Brien,
J. M. D. Coey,
P. Stamenov,
K. Rode
Abstract:
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x = 0.5$, 0.7 or 0.9, including crystallographic, magnetic order, magneto-transport and spin pol…
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The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of Mn$_y$Ru$_x$Ga films on MgO (100) substrates with $1.8 \leq y \leq 2.6$ and $x = 0.5$, 0.7 or 0.9, including crystallographic, magnetic order, magneto-transport and spin polarisation is undertaken to map specific composition-dependent properties in this versatile ternary system. A comparison of experimental densities obtained from X-ray reflectivity with calculated densities indicates full site occupancy for all compositions, which implies chemical disorder. All moments lie on the Slater-Pauling plot with slope 1 and all except $x = 0.5$, $y = 2.2$ exhibit magnetic compensation at \tcmp~below 500~K. The coercivity near \tcmp~exceeds 10~T. Increasing the Mn or Ru content raises \tcmp, but increasing Ru also decreases the spin polarisation determined by point contact Andreev reflection. Molecular field theory is used to model the temperature dependence of the net ferrimagnetic moment and three principal exchange coefficients are deduced. Marked differences in the shape of anomalous Hall and net magnetisation hysteresis loops are explained by substantial canting of the small net moment by up to \SI{40}{\degree} relative to the $c$-axis in zero field, which is a result of slight non-collinearity of the Mn$^{4c}$ sublattice moments due to competing intra-sublattice exchange interactions arising from antisite disorder and excess Mn in the unit cell. Consequences are reduced spin polarisation and an enhanced intrinsic contribution to the anomalous Hall effect. The systematic investigation of the physical properties as a function of $x$ and $y$ will guide the selection of compositions to meet the requirements for magnonic and spintronic MRG-based devices.
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Submitted 22 April, 2021; v1 submitted 10 December, 2020;
originally announced December 2020.
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Spin transfer torque in Mn$_3$Ga-based ferrimagnetic tunnel junctions from first principles
Authors:
Maria Stamenova,
Plamen Stamenov,
Farzad Mahfouzi,
Quilong Sun,
Nicholas Kioussis,
Stefano Sanvito
Abstract:
We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a s…
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We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a scattering region extended to over 7.6 nm into the Mn$_3$Ga electrode, we find long-range spatial oscillations of the STT decaying on a length scale of a few tens of angstroms, both in the linear response regime and for finite bias. The oscillatory behavior of the STT in Mn$_3$Ga is robust against variations in the stack geometry and the applied bias voltage, which may affect the phase and the amplitude of the spatial oscillation, but the wave number is only responsive to variations in the longitudinal lattice constant of Mn$_3$Ga (for fixed in-plane geometry) without being commensurate with the lattice. Our interpretation of the long-range STT oscillations is based on the bulk electronic structure of Mn$_3$Ga, taking also into account the spin-filtering properties of the MgO barrier. Comparison to a fully Mn$_3$Ga-based stack shows similar STT oscillations, but a significant enhancement of both the TMR effect at the Fermi level and the STT at the interface, due to resonant tunneling for the mirror-symmetric junction with thinner barrier (three monoatomic layers). From the calculated energy dependence of the spin-polarized transmissions at 0 V, we anticipate asymmetric or symmetric TMR as a function of the applied bias voltage for the Fe-based and the all-Mn$_3$Ga stacks, respectively, which also both exhibit a sign change below 1 V. In the latter (symmetric) case we expect a TMR peak at zero, which is larger for the thinner barriers because of a spin-polarized resonant tunneling contribution.
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Submitted 7 January, 2022; v1 submitted 29 September, 2020;
originally announced September 2020.
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New highly-anisotropic Rh-based Heusler compound for magnetic recording
Authors:
Yangkun He,
Gerhard H. Fecher,
Chenguang Fu,
Yu Pan,
Kaustuv Manna,
Johannes Kroder,
Ajay Jha,
Xiao Wang,
Zhiwei Hu,
Stefano Agrestini,
Javier Herrero-Martin,
Manuel Valvidares,
Yurii Skourski,
Walter Schnelle,
Plamen Stamenov,
Horst Borrmann,
Liu Hao Tjeng,
Rudolf Schaefer,
S. S. P. Parkin,
J. M. D. Coey,
Claudia Felser
Abstract:
The development of high-density magnetic recording media is limited by the superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat assisted magnetic recording (HAMR) has been developed, rapidly heating the media to the C…
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The development of high-density magnetic recording media is limited by the superparamagnetism in very small ferromagnetic crystals. Hard magnetic materials with strong perpendicular anisotropy offer stability and high recording density. To overcome the difficulty of writing media with a large coercivity, heat assisted magnetic recording (HAMR) has been developed, rapidly heating the media to the Curie temperature Tc before writing, followed by rapid cooling. Requirements are a suitable Tc, coupled with anisotropic thermal conductivity and hard magnetic properties. Here we introduce Rh2CoSb as a new hard magnet with potential for thin film magnetic recording. A magnetocrystalline anisotropy of 3.6 MJm-3 is combined with a saturation magnetization of μ0Ms = 0.52 T at 2 K (2.2 MJm-3 and 0.44 T at room-temperature). The magnetic hardness parameter of 3.7 at room temperature is the highest observed for any rare-earth free hard magnet. The anisotropy is related to an unquenched orbital moment of 0.42 μB on Co, which is hybridized with neighbouring Rh atoms with a large spin-orbit interaction. Moreover, the pronounced temperature-dependence of the anisotropy that follows from its Tc of 450 K, together with a high thermal conductivity of 20 Wm-1K-1, makes Rh2CoSb a candidate for development for heat assisted writing with a recording density in excess of 10 Tb/in2.
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Submitted 2 September, 2020;
originally announced September 2020.
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Sub-picosecond exchange-relaxation in the compensated ferrimagnet Mn$_2$Ru$_x$Ga
Authors:
G. Bonfiglio,
K. Rode,
G. Y. P. Atcheson,
P. Stamenov,
J. M. D. Coey,
A. V. Kimel,
Th. Rasing,
A. Kirilyuk
Abstract:
We study the demagnetization dynamics of the fully compensated half-metallic ferrimagnet Mn$_2$Ru$_x$Ga. While the two antiferromagnetically coupled sublattices are both composed of manganese, they exhibit different temperature dependencies due to their differing local environments. The sublattice magnetization dynamics triggered by femtosecond laser pulses are studied to reveal the roles played b…
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We study the demagnetization dynamics of the fully compensated half-metallic ferrimagnet Mn$_2$Ru$_x$Ga. While the two antiferromagnetically coupled sublattices are both composed of manganese, they exhibit different temperature dependencies due to their differing local environments. The sublattice magnetization dynamics triggered by femtosecond laser pulses are studied to reveal the roles played by the spin and intersublattice exchange. We find a two-step demagnetization process, similar to the well-established case of Gd(FeCo)$_3$, where the two Mn-sublattices have different demagnetization rates. The behaviour is analysed using a four-temperature model, assigning different temperatures to the two manganese spin baths. Even in this strongly exchange-coupled system, the two spin reservoirs have considerably different behaviour. The half-metallic nature and strong exchange coupling of Mn$_2$Ru$_x$Ga lead to spin angular momentum conservation at much shorter time scales than found for Gd(FeCo)$_3$ which suggests that low-power, sub-picosecond switching of the net moment of Mn$_2$Ru$_x$Ga is possible.
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Submitted 3 March, 2020;
originally announced March 2020.
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Magnetization dynamics of the compensated ferrimagnet $Mn_{2}Ru_{x}Ga$
Authors:
G. Bonfiglio,
K. Rode,
K. Siewerska,
J. Besbas,
G. Y. P. Atcheson,
P. Stamenov,
J. M. D. Coey,
A. V. Kimel,
Th. Rasing,
A. Kirilyuk
Abstract:
Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of…
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Here we study both static and time-resolved dynamic magnetic properties of the compensated ferrimagnet from room temperature down to 10K, thus crossing the magnetic compensation temperature $T_{M}$. The behaviour is analysed with a model of a simple collinear ferrimagnet with uniaxial anisotropy and site-specific gyromagnetic ratios. We find a maximum zero-applied-field resonance frequency of $\sim$160GHz and a low intrinsic Gilbert damping $α$$\sim$0.02, making it a very attractive candidate for various spintronic applications.
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Submitted 19 September, 2019;
originally announced September 2019.
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Single pulse all-optical toggle switching of magnetization without Gd: The example of Mn2RuxGa
Authors:
C. Banerjee,
N. Teichert,
K. Siewierska,
Z. Gercsi,
G. Atcheson,
P. Stamenov,
K. Rode,
J. M. D. Coey,
J. Besbas
Abstract:
Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographic…
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Energy-efficient control of magnetization without the help of a magnetic field is a key goal of spintronics. Purely heat-induced single-pulse all-optical toggle switching has been demonstrated, but so far only in Gd based amorphous ferrimagnet films. In this work, we demonstrate toggle switching in the half-metallic compensated ferrimagnetic Heusler alloys Mn2RuxGa, which have two crystallographically-inequivalent Mn sublattices. Moreover, we observe the switching at room temperature in samples that are immune to external magnetic fields in excess of 1 T, provided they exhibit compensation above room temperature. Observations of the effect in compensated ferrimagnets without Gd challenges our understanding of all-optical switching. The dynamic behavior indicates that Mn2RuxGa switches in 2 ps or less. Our findings widen the basis for fast optical switching of magnetization and break new ground for engineered materials that can be used for nonvolatile ultrafast switches using ultrashort pulses of light.
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Submitted 17 April, 2020; v1 submitted 12 September, 2019;
originally announced September 2019.
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Giant spin-orbit torque in a single ferrimagnetic metal layer
Authors:
Simon Lenne,
Yong-Chang Lau,
Ajay Jha,
Gwenaël Y. P. Atcheson,
Roberto E. Troncoso,
Arne Brataas,
J. M. D. Coey,
Plamen Stamenov,
Karsten Rode
Abstract:
Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferromagnets, these materials have not been extensively studied due to difficulties in exciting and detecting the high-frequency spin dynamics, especially in thin film…
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Antiferromagnets and compensated ferrimagnets offer opportunities to investigate spin dynamics in the 'terahertz gap' because their resonance modes lie in the 0.3 THz to 3 THz range. Despite some inherent advantages when compared to ferromagnets, these materials have not been extensively studied due to difficulties in exciting and detecting the high-frequency spin dynamics, especially in thin films. Here we show that spin-obit torque in a single layer of the highly spin-polarized compensated ferrimagnet Mn2RuxGa is remarkably efficient at generating spin-orbit fields μ_0H_eff, which approach 0.1x10-10 T m2/A in the low-current density limit -- almost a thousand times the Oersted field, and one to two orders of magnitude greater than the effective fields in heavy metal/ferromagnet bilayers. From an analysis of the harmonic Hall effect which takes account of the thermal contributions from the anomalous Nernst effect, we show that the antidamping component of the spin-orbit torque is sufficient to sustain self-oscillation. Our study demonstrates that spin electronics has the potential to underpin energy-frugal, chip-based solutions to the problem of ultra high-speed information transfer.
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Submitted 29 April, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Magnetocrystalline anisotropy and exchange probed by high-field anomalous Hall effect in fully-compensated half-metallic Mn2RuxGa thin films
Authors:
Ciarán Fowley,
Karsten Rode,
Yong-Chang Lau,
Naganivetha Thiyagarajah,
Davide Betto,
Kiril Borisov,
Gwenael Atcheson,
Erik Kampert,
Zhaosheng Wang,
Ye Yuan,
Shengqiang Zhou,
Jürgen Lindner,
Plamen Stamenov,
J. M. D. Coey,
Alina Maria Deac
Abstract:
Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular f…
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Magnetotransport is investigated in thin films of the half-metallic ferrimagnet Mn$_2$Ru$_x$Ga in pulsed magnetic fields of up to 58 T. A non-vanishing Hall signal is observed over a broad temperature range, spanning the compensation temperature 155 K, where the net magnetic moment is strictly zero, the anomalous Hall conductivity is 6673 $Ω^{-1}.m^{-1}$ and the coercivity exceeds 9 T. Molecular field modelling is used to determine the intra- and inter-sublattice exchange constants and from the spin-flop transition we infer the anisotropy of the electrically active sublattice to be 216 kJ/m$^3$ and predict the magnetic resonances frequencies. Exchange and anisotropy are comparable and hard-axis applied magnetic fields result in a tilting of the magnetic moments from their collinear ground state. Our analysis is applicable to collinear ferrimagnetic half-metal systems.
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Submitted 2 October, 2018;
originally announced October 2018.
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Antiferromagnetic Single-layer Spin-Orbit Torque Oscillators
Authors:
Roberto E. Troncoso,
Karsten Rode,
Plamen Stamenov,
J. Michael D. Coey,
Arne Brataas
Abstract:
We show how a charge current through a single antiferromagnetic layer can excite and control self-oscillations. Sustained oscillations with tunable amplitudes and frequencies are possible in a variety of geometries using certain classes of non-centrosymmetric materials that exhibit finite dissipative spin-orbit torque. We compute the steady-state phase diagram as a function of the current and spin…
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We show how a charge current through a single antiferromagnetic layer can excite and control self-oscillations. Sustained oscillations with tunable amplitudes and frequencies are possible in a variety of geometries using certain classes of non-centrosymmetric materials that exhibit finite dissipative spin-orbit torque. We compute the steady-state phase diagram as a function of the current and spin-orbit torque magnitude. The anisotropic magnetoresistance causes the conversion of the resulting AF oscillations to a terahertz AC output voltage. These findings provide an attractive and novel route to design terahertz antiferromagnetic spin-orbit torque oscillators in simple single-layer structures.
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Submitted 24 January, 2019; v1 submitted 30 August, 2018;
originally announced August 2018.
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Structure, site-specific magnetism and magneto-transport properties of epitaxial D0$_{22}$ Mn$_2$Fe$_x$Ga thin films
Authors:
Davide Betto,
Yong-Chang Lau,
Kiril Borisov,
Kurt Kummer,
N. B. Brookes,
Plamen Stamenov,
J. M. D. Coey,
Karsten Rode
Abstract:
Ferrimagnetic Mn$_2$Fe$_x$Ga $(0.26 \leq x \leq 1.12)$ thin films have been characterised by X-ray diffraction, SQUID magnetometry, X-ray absorption spectroscopy, X-ray magnetic circular dichroism and Mössbauer spectroscopy with the aim of determining the structure and site-specific magnetism of this tetragonal, D0$_{22}$-structure Heusler compound. High-quality epitaxial films with low RMS surfac…
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Ferrimagnetic Mn$_2$Fe$_x$Ga $(0.26 \leq x \leq 1.12)$ thin films have been characterised by X-ray diffraction, SQUID magnetometry, X-ray absorption spectroscopy, X-ray magnetic circular dichroism and Mössbauer spectroscopy with the aim of determining the structure and site-specific magnetism of this tetragonal, D0$_{22}$-structure Heusler compound. High-quality epitaxial films with low RMS surface roughness ($\sim 0.6$ nm) are grown by magnetron co-sputtering. The tetragonal distortion induces strong perpendicular magnetic anisotropy along the $c$-axis with a typical coercive field $μ_0 H\sim 0.8$ T and an anisotropy field ranging from $6$ to $8$ T. Upon increasing the Fe content $x$, substantial uniaxial anisotropy, $K_\mathrm{u} \geq 1.0$ MJ/m$^3$ can be maintained over the full $x$ range, while the magnetisation of the compound is reduced from $400$ to $280$ kA/m. The total magnetisation is almost entirely given by the sum of the spin moments originating from the ferrimagnetic Mn and Fe sublattices, with the latter being coupled ferromagnetically to one of the former. The orbital magnetic moments are practically quenched, and have negligible contributions to the magnetisation. The films with $x=0.73$ exhibit a high anomalous Hall angle of $2.5$ % and a high Fermi-level spin polarisation, above $51$ %, as measured by point contact Andreev reflection. The Fe-substituted Mn$_2$Ga films are highly tunable with a unique combination of high anisotropy, low magnetisation, appreciable spin polarisation and low surface roughness, making them very strong candidates for thermally-stable spin-transfer-torque switching nanomagnets with lateral dimensions down to $10$ nm.
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Submitted 5 April, 2017;
originally announced April 2017.
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Surface magnetism of strontium titanate
Authors:
J. M. D. Coey,
M Venkatesan,
P Stamenov
Abstract:
SrTiO3 plays a central role in oxide electronics. It is the substrate of choice for functional oxide heterostructures based on perovskite-structure thin-film stacks, and its surface or interface with a polar oxide such as LaAlO3 can become a two-dimensional conductor because of electronic reconstruction or the presence of oxygen defects. Inconsistent reports of magnetic order in SrTiO3 abound in t…
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SrTiO3 plays a central role in oxide electronics. It is the substrate of choice for functional oxide heterostructures based on perovskite-structure thin-film stacks, and its surface or interface with a polar oxide such as LaAlO3 can become a two-dimensional conductor because of electronic reconstruction or the presence of oxygen defects. Inconsistent reports of magnetic order in SrTiO3 abound in the literature. Here we report a systematic experimental study aimed at establishing how and when SrTiO3 can develop a magnetic moment at room temperature. Polished 100, 110 or 111 crystal slices from four different suppliers are characterized before and after vacuum annealing at 750 °C, both in single-crystal and powdered form. Impurity content is analysed at the surface and in the bulk. Besides the underlying intrinsic diamagnetism of SrTiO3, magnetic signals are of three types-a Curie law susceptibility due to dilute magnetic impurities at the ppm level, a hysteretic, temperature-dependent ferromagnetic impurity contribution, and a practically-anhysteretic, defect-related temperature-independent component that saturates in about 200 mT. The latter component is intrinsic. It is often the largest, reaching 10 Bohr magnetons per nm2 of surface area or more and dominating the magnetic response in low fields at room temperature. It is associated with defects near the surface, and can be destroyed by treatment with Tiron (C6H4Na2O8S2), an electron donor molecule that forms a strong complex with titanium at the surface. The origin of this unusual high-temperature ferromagnetic-like response is discussed.
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Submitted 30 June, 2016;
originally announced June 2016.
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Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer
Authors:
Yong-Chang Lau,
Davide Betto,
Karsten Rode,
JMD Coey,
Plamen Stamenov
Abstract:
Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impracti…
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Magnetization reversal of a perpendicular ferromagnetic free layer by spin-orbit torque (SOT) is an attractive alternative to spin-transfer torque (STT) switching in magnetic random-access memory (MRAM) where the write process involves passing a high current across an ultrathin tunnel barrier. A small symmetry-breaking bias field is usually needed for deterministic SOT switching but it is impractical to generate the field externally for spintronic applications. Here, we demonstrate robust zero-field SOT switching of a perpendicular Co90Fe10 (CoFe) free layer where the symmetry is broken by magnetic coupling to a second in-plane exchange-biased CoFe layer via a nonmagnetic Ru spacer. The preferred magnetic state of the free layer is determined by the current polarity and the nature of the interlayer exchange coupling (IEC). Our strategy offers a scalable solution to realize bias-field-free SOT switching that can lead to a generation of SOT-based devices, that combine high storage density and endurance with potentially low power consumption.
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Submitted 18 November, 2015;
originally announced November 2015.
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High spin polarization in epitaxial films of ferrimagnetic Mn3Ga
Authors:
Huseyin Kurt,
Karsten Rode,
Munuswamy Venkatesan,
Plamen Stanislavov Stamenov,
John Michael David Coey
Abstract:
Ferrimagnetic Mn3Ga exhibits a unique combination of low saturation magnetization (Ms = 0.11 MA m-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of Ku = 0.89 MJ m-3. Epitaxial c-axis films exhibit spin polarization as high as 58%, measured using point contact Andreev reflection. These epitaxial films will be able to support thermally stable sub-10 nm bits for spin transfe…
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Ferrimagnetic Mn3Ga exhibits a unique combination of low saturation magnetization (Ms = 0.11 MA m-1) and high perpendicular anisotropy with a uniaxial anisotropy constant of Ku = 0.89 MJ m-3. Epitaxial c-axis films exhibit spin polarization as high as 58%, measured using point contact Andreev reflection. These epitaxial films will be able to support thermally stable sub-10 nm bits for spin transfer torque memories.
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Submitted 23 October, 2010;
originally announced October 2010.
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Ferromagnetism in defect-ridden oxides and related materials
Authors:
J. M. D. Coey,
P. Stamenov,
R. D. Gunning,
M. Venkatesan,
K. Paul
Abstract:
The existence of high-temperature ferromagnetism in thin films and nanoparticles of oxides containing small quantities of magnetic dopants remains controversial. Some regard these materials as dilute magnetic semiconductors, while others think they are ferromagnetic only because the magnetic dopants form secondary ferromagnetic impurity phases such as cobalt metal or magnetite. There are also repo…
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The existence of high-temperature ferromagnetism in thin films and nanoparticles of oxides containing small quantities of magnetic dopants remains controversial. Some regard these materials as dilute magnetic semiconductors, while others think they are ferromagnetic only because the magnetic dopants form secondary ferromagnetic impurity phases such as cobalt metal or magnetite. There are also reports in d0 systems and other defective oxides that contain no magnetic ions. Here, we investigate TiO2 (rutile) containing 1 - 5% of iron cations and find that the room-temperature ferromagnetism of films prepared by pulsed-laser deposition is not due to magnetic ordering of the iron. The films are neither dilute magnetic semiconductors nor hosts to an iron-based ferromagnetic impurity phase. A new model is developed for defect-related ferromagnetism which involves a spin-split defect band populated by charge transfer from a proximate charge reservoir in the present case a mixture Fe2+ and Fe3+ ions in the oxide lattice. The phase diagram for the model shows how inhomogeneous Stoner ferromagnetism depends on the total number of electrons Ntot, the Stoner exchange integral I and the defect bandwidth W; the band occupancy is governed by the d-d Coulomb interaction U. There are regions of ferromagnetic metal, half-metal and insulator as well as nonmagnetic metal and insulator. A characteristic feature of the high-temperature Stoner magnetism is an an anhysteretic magnetization curve which is practically temperature independent below room temperature. This is related to a wandering ferromagnetic axis which is determined by local dipole fields. The magnetization is limited by the defect concentration, not by the 3d doping. Only 1-2 % of the volume of the films is magnetically ordered.
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Submitted 29 March, 2010;
originally announced March 2010.
