Showing 1–39 of 39 results for author: Stacey, A

The $N_2V$ color center: a ubiquitous visible and near-infrared-II quantum emitter in nitrogen-doped diamond

Authors: Brett C. Johnson, Mitchell O. de Vries, Alexander J. Healey, Marco Capelli, Anjay Manian, Giannis Thalassinos, Amanda N. Abraham, Harini Hapuarachchi, Tingpeng Luo, Vadym Mochalin, Jan Jeske, Jared H. Cole, Salvy Russo, Brant C. Gibson, Alastair Stacey, Philipp Reineck

Abstract: Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting their applications in photonics, fiber communications, and biology. Here, we show that the nitrogen-vacancy-nitrogen ($N_2V$) center, which emits in the visible and… ▽ More Photoluminescent defects in diamond, like the nitrogen-vacancy (NV) color center, are at the forefront of emerging optical quantum technologies. Most emit in the visible and near-infrared spectral region below 1000 nm (NIR-I), limiting their applications in photonics, fiber communications, and biology. Here, we show that the nitrogen-vacancy-nitrogen ($N_2V$) center, which emits in the visible and near-infrared-II (NIR-II, 1000-1700 nm), is ubiquitous in as-synthesized and processed nitrogen-doped diamond from bulk samples to nanoparticles. We demonstrate that $N_2V$ is also present in commercially available state-of-the-art NV diamond sensing chips made via chemical vapor deposition (CVD). In high-pressure high-temperature (HPHT) diamonds, the photoluminescence (PL) intensity of both $N_2V$ charge states, $N_2V^0$ in the visible and $N_2V^-$ in the NIR-II, increases with increasing substitutional nitrogen concentration. We determine the PL lifetime of $N_2V^-$ to be 0.3 ns and compare a quantum optical and density functional theory model of the $N_2V^-$ with experimental PL spectra. Finally, we show that detonation nanodiamonds (DND) show stable PL in the NIR-II, which we attribute to the $N_2V$ color center, and use this NIR-II PL to image DNDs inside skin cells. Our results will contribute to the scientific and technological exploration and development of the $N_2V$ color center and inspire more research into its effect on other color centers in diamond. △ Less

Submitted 18 December, 2024; v1 submitted 15 December, 2024; originally announced December 2024.

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with $V_{th} < -6V$ and High On-Current

Authors: Chunlin Qu, Isha Maini, Qing Guo, Alastair Stacey, David A. J. Moran

Abstract: In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$… ▽ More In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 μm$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility. △ Less

Submitted 14 October, 2024; v1 submitted 13 August, 2024; originally announced August 2024.

Impact of surface treatments on the electron affinity of nitrogen-doped ultrananocrystalline diamond

Authors: Andre Chambers, Daniel J. McCloskey, Nikolai Dontschuk, Hassan N. Al Hashem, Billy J. Murdoch, Alastair Stacey, Steven Prawer, Arman Ahnood

Abstract: In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from electron emission sources to electrodes for neural interfacing. To tailor their properties for different uses, NCD surfaces can be terminated with various chemical functionalities, in particular hydrogen and oxygen, which shi… ▽ More In recent years, various forms of nanocrystalline diamond (NCD) have emerged as an attractive group of diamond/graphite mixed-phase materials for a range of applications from electron emission sources to electrodes for neural interfacing. To tailor their properties for different uses, NCD surfaces can be terminated with various chemical functionalities, in particular hydrogen and oxygen, which shift the band edge positions and electron affinity values. While the band edge positions of chemically terminated single crystal diamond are well understood, the same is not true for nanocrystalline diamond, which has uncontrolled crystallographic surfaces with a variety of chemical states as well as graphitic grain boundary regions. In this work, the relative band edge positions of as-grown, hydrogen terminated, and oxygen terminated nitrogen-doped ultrananocrystalline diamond (N-UNCD) are determined using ultraviolet photoelectron spectroscopy (UPS), while the band bending is investigated using photoelectrochemical measurements. In contrast to the widely reported negative electrode affinity of hydrogen terminated single crystal diamond, our work demonstrates that hydrogen terminated N-UNCD exhibits a positive electron affinity owing to the increased surface and bulk defect densities. These findings elucidate the marked differences in electrochemical properties of hydrogen and oxygen terminated N-UNCD, such as the dramatic changes in electrochemical capacitance. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: Applied Surface Science (2024): 159710

Towards optical neuromodulation using nitrogen-doped ultrananocrystalline diamond photoelectrodes

Authors: Samira Falahatdoost, Andre Chambers, Alastair Stacey, Steven Prawer, Arman Ahnood

Abstract: Nitrogen-doped ultrananocrystalline diamond (N-UNCD) is a form of diamond electrode with near-infrared photoresponsivity, making it well suited for physiological applications. N-UNCD's photoresponsivity is strongly influenced by its surface. While it is known that oxygen treatment provides a higher photoresponsivity, a better understanding of its surface processes is needed to tailor the material… ▽ More Nitrogen-doped ultrananocrystalline diamond (N-UNCD) is a form of diamond electrode with near-infrared photoresponsivity, making it well suited for physiological applications. N-UNCD's photoresponsivity is strongly influenced by its surface. While it is known that oxygen treatment provides a higher photoresponsivity, a better understanding of its surface processes is needed to tailor the material for optical neuromodulation. This work examines the impact of various oxygen treatment methods, with aim of creating oxygen rich surfaces with different chemical and structural properties. Surface characterisation methods along with electrochemical and photoelectrochemical measurements and modelling were used to investigate the films. It was found that oxygen furnace annealing resulted in orders of magnitude improvement in the near-infrared photoresponsivity, to 3.75 +/- 0.05 uA/W. This translates to an approximate 200 times increase in the photocurrent compared to the untreated surface. This enhancement in photocurrent is largely due to the changes in the chemical species present at the surface. The photocurrent is estimated to be sufficient for extra-cellular stimulation of brain neurons within the safe optical exposure limit, positioning N-UNCD as an excellent candidate to be used in next-generation photoelectrodes for photobiomodulation. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Journal ref: Surfaces and Interfaces 30 (2022): 101850

Methods for color center preserving hydrogen-termination of diamond

Authors: Daniel J. McCloskey, Daniel Roberts, Lila V. H. Rodgers, Yuri Barsukov, Igor D. Kaganovich, David A. Simpson, Nathalie P. de Leon, Alastair Stacey, Nikolai Dontschuk

Abstract: Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these case… ▽ More Chemical functionalization of diamond surfaces by hydrogen is an important method for controlling the charge state of near-surface fluorescent color centers, an essential process in fabricating devices such as diamond field-effect transistors and chemical sensors, and a required first step for realizing families of more complex terminations through subsequent chemical processing. In all these cases, termination is typically achieved using hydrogen plasma sources which can etch or damage the diamond as well as deposited materials or embedded colour centers. This work explores alternative methods for lower-damage hydrogenation of diamond surfaces, specifically the annealing of diamond samples in high-purity, non-explosive mixtures of nitrogen and hydrogen gas, and the exposure of samples to microwave hydrogen plasmas in the absence of intentional stage heating. The effectiveness of these methods are characterized by x-ray photoelectron spectroscopy, and comparison of the results to density-functional modelling of the surface hydrogenation energetics implicates surface oxygen ligands as the primary factor limiting the termination quality of annealed samples. Finally, photoluminescence spectroscopy is used to verify that both the annealing and reduced sample temperature plasma methods are non-destructive to near-surface ensembles of nitrogen-vacancy centers, in stark contrast to plasma treatments which use heated sample stages. △ Less

Submitted 17 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Identification of defects and the origins of surface noise on hydrogen-terminated (100) diamond

Authors: Yi-Ying Sung, Lachlan Oberg, Rebecca Griffin, Alex K. Schenk, Henry Chandler, Santiago Corujeira Gallo, Alastair Stacey, Tetiana Sergeieva, Marcus W. Doherty, Cedric Weber, Christopher I. Pakes

Abstract: Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generat… ▽ More Near-surface nitrogen-vacancy centres are critical to many diamond-based quantum technologies such as information processors and nanosensors. Surface defects play an important role in the design and performance of these devices. The targeted creation of defects is central to proposed bottom-up approaches to nanofabrication of quantum diamond processors, and uncontrolled surface defects may generate noise and charge trapping which degrade shallow NV device performance. Surface preparation protocols may be able to control the production of desired defects and eliminate unwanted defects, but only if their atomic structure can first be conclusively identified. This work uses a combination of scanning tunnelling microscopy (STM) imaging and first-principles simulations to identify several surface defects on H:C(100)-2x1 surfaces prepared using chemical vapour deposition (CVD). The atomic structure of these defects is elucidated, from which the microscopic origins of magnetic noise and charge trapping is determined based on modelling of their paramagnetic properties and acceptor states. Rudimentary control of these deleterious properties is demonstrated through STM tip-induced manipulation of the defect structure. Furthermore, the results validate accepted models for CVD diamond growth by identifying key adsorbates responsible for nucleation of new layers. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 15 pages, 14 figures, combined manuscript and supporting information

Formation of a boron-oxide termination for the (100) diamond surface

Authors: Alex K. Schenk, Rebecca Griffin, Anton Tadich, Daniel Roberts, Alastair Stacey

Abstract: A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide $\rm{B_2O_3}$ onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to $\rm{950^{\circ} C}$. The resulting termination was highly oriented and chemically homogeneous, although further optimisation is required to increase the surface coverage beyond… ▽ More A boron-oxide termination of the diamond (100) surface has been formed by depositing molecular boron oxide $\rm{B_2O_3}$ onto the hydrogen-terminated (100) diamond surface under ultrahigh vacuum conditions and annealing to $\rm{950^{\circ} C}$. The resulting termination was highly oriented and chemically homogeneous, although further optimisation is required to increase the surface coverage beyond the 0.4 ML achieved here. This work demonstrates the possibility of using molecular deposition under ultrahigh vacuum conditions for complex surface engineering of the diamond surface, and may be a first step in an alternative approach to fabricating boron doped delta layers in diamond. △ Less

Submitted 3 March, 2024; v1 submitted 6 February, 2024; originally announced February 2024.

Comments: Main text 10 pages, 4 figures. Supp Info 3 pages

Diamond Surface Functionalization via Visible Light-Driven C-H Activation for Nanoscale Quantum Sensing

Authors: Lila V. H. Rodgers, Suong T. Nguyen, James H. Cox, Kalliope Zervas, Zhiyang Yuan, Sorawis Sangtawesin, Alastair Stacey, Cherno Jaye, Conan Weiland, Anton Pershin, Adam Gali, Lars Thomsen, Simon A. Meynell, Lillian B. Hughes, Ania C. Bleszynski Jayich, Xin Gui, Robert J. Cava, Robert R. Knowles, Nathalie P. de Leon

Abstract: Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a f… ▽ More Nitrogen-vacancy centers in diamond are a promising platform for nanoscale nuclear magnetic resonance sensing. Despite significant progress towards using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. NV molecular sensing requires that target molecules are immobilized within a few nanometers of NV centers with long spin coherence time. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be more readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown to be compatible with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C-H bonds on single-crystal diamond surfaces under ambient conditions using visible light. This functionalization method is compatible with charge stable NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof of principle, we use shallow ensembles of NV centers to detect nuclear spins from functional groups attached to the surface. Our approach to surface functionalization based on visible light-driven C-H bond activation opens the door to deploying NV centers as a broad tool for chemical sensing and single-molecule spectroscopy. △ Less

Submitted 13 September, 2023; originally announced September 2023.

A telecom O-band emitter in diamond

Authors: Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky, Mitchell O. de Vries, Brett C. Johnson, Brant C. Gibson, Edwin L. H. Mayes, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Ádám Gali, Gergő Thiering, Adam Dalis, Timothy Dumm, Gregory D. Scholes, Alastair Stacey, Philipp Reineck, Nathalie P. de Leon

Abstract: Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which… ▽ More Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Imaging current paths in silicon photovoltaic devices with a quantum diamond microscope

Authors: S. C. Scholten, G. J. Abrahams, B. C. Johnson, A. J. Healey, I. O. Robertson, D. A. Simpson, A. Stacey, S. Onoda, T. Ohshima, T. C. Kho, J. Ibarra Michel, J. Bullock, L. C. L. Hollenberg, J. -P. Tetienne

Abstract: Magnetic imaging with nitrogen-vacancy centers in diamond, also known as quantum diamond microscopy, has emerged as a useful technique for the spatial mapping of charge currents in solid-state devices. In this work, we investigate an application to photovoltaic (PV) devices, where the currents are induced by light. We develop a widefield nitrogen-vacancy microscope that allows independent stimulus… ▽ More Magnetic imaging with nitrogen-vacancy centers in diamond, also known as quantum diamond microscopy, has emerged as a useful technique for the spatial mapping of charge currents in solid-state devices. In this work, we investigate an application to photovoltaic (PV) devices, where the currents are induced by light. We develop a widefield nitrogen-vacancy microscope that allows independent stimulus and measurement of the PV device, and test our system on a range of prototype crystalline silicon PV devices. We first demonstrate micrometer-scale vector magnetic field imaging of custom PV devices illuminated by a focused laser spot, revealing the internal current paths in both short-circuit and open-circuit conditions. We then demonstrate time-resolved imaging of photocurrents in an interdigitated back-contact solar cell, detecting current build-up and subsequent decay near the illumination point with microsecond resolution. This work presents a versatile and accessible analysis platform that may find distinct application in research on emerging PV technologies. △ Less

Submitted 22 March, 2022; originally announced March 2022.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. Applied 18, 014041 (2022)

Proximal nitrogen reduces the fluorescence quantum yield of nitrogen-vacancy centres in diamond

Authors: Marco Capelli, Lukas Lindner, Tingpeng Luo, Jan Jeske, Hiroshi Abe, Shinobu Onoda, Takeshi Ohshima, Brett Johnson, David A. Simpson, Alastair Stacey, Philipp Reineck, Brant C. Gibson, Andrew D. Greentree

Abstract: The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineer… ▽ More The nitrogen-vacancy colour centre in diamond is emerging as one of the most important solid-state quantum systems. It has applications to fields including high-precision sensing, quantum computing, single photon communication, metrology, nanoscale magnetic imaging and biosensing. For all of these applications, a high quantum yield of emitted photons is desirable. However, diamond samples engineered to have high densities of nitrogen-vacancy centres show levels of brightness varying significantly within single batches, or even within the same sample. Here we show that nearby nitrogen impurities quench emission of nitrogen-vacancy centres via non-radiative transitions, resulting in a reduced fluorescence quantum yield. We monitored the emission properties of nitrogen-vacancy centre ensembles from synthetic diamond samples with different concentrations of nitrogen impurities. While at low nitrogen densities of 1.81 ppm we measured a lifetime of 13.9 ns, we observed a strong reduction in lifetime with increasing nitrogen density. We measure a lifetime as low as 4.4 ns at a nitrogen density of 380 ppm. The change in lifetime matches a reduction in relative fluorescence quantum yield from 77.4 % to 32 % with an increase in nitrogen density from 88 ppm to 380 ppm, respectively. These results will inform the conditions required to optimise the properties of diamond crystals devices based on the fluorescence of nitrogen-vacancy centres. Furthermore, this work provides insights into the origin of inhomogeneities observed in high-density nitrogen-vacancy ensembles within diamonds and nanodiamonds. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Comments: 22 pages, 14 figures (4 figures in the main text, 10 figures in the supplementary information)

Manipulation of magnetic skyrmions in continuous Ir/Co/Pt multilayers

Authors: M. Cubukcu, S. Pollath, S. Tacchi, A. Stacey, E. Darwin, C. W. F. Freeman, C. Barton, B. J. Hickey, C. H. Marrows, G. Carlotti, C. H. Back, O. Kazakova

Abstract: We show that magnetic skyrmions can be stabilized at room temperature in continuous Ir/Co/Pt multilayers on SiO2/Si substrate without prior application of electric current or magnetic field. While decreasing the Co thickness, tuning of the magnetic anisotropy gives rise to a transition from worm-like domain patterns to long and separate stripes. The skyrmions are clearly imaged in both states usin… ▽ More We show that magnetic skyrmions can be stabilized at room temperature in continuous Ir/Co/Pt multilayers on SiO2/Si substrate without prior application of electric current or magnetic field. While decreasing the Co thickness, tuning of the magnetic anisotropy gives rise to a transition from worm-like domain patterns to long and separate stripes. The skyrmions are clearly imaged in both states using Magnetic Force Microscopy. The density of skyrmions can be significantly enhanced after applying the in-plane field procedure. In addition, we have investigated the phase diagram of a sample deposited in the same run, but onto a SiNx membrane using Lorentz transmission electron microscopy. Interestingly, this sample shows a different behaviour as function of magnetic field hinting to the influence of strain on the phase diagram of skyrmions in thin film multilayers. Our results provide means to manipulate skyrmion, further allowing for optimized engineering of skyrmion-based devices. △ Less

Submitted 24 November, 2021; originally announced November 2021.

Nitrogen overgrowth as a catalytic mechanism during diamond chemical vapour deposition

Authors: Lachlan M. Oberg, Marietta Batzer, Alastair Stacey, Marcus W. Doherty

Abstract: Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond.… ▽ More Nitrogen is frequently included in chemical vapour deposition feed gases to accelerate diamond growth. While there is no consensus for an atomistic mechanism of this effect, existing studies have largely focused on the role of sub-surface nitrogen and nitrogen-based adsorbates. In this work, we demonstrate the catalytic effect of surface-embedded nitrogen in nucleating new layers of (100) diamond. To do so we develop a model of nitrogen overgrowth using density functional theory. Nucleation of new layers occurs through C insertion into a C--C surface dimer. However, we find that C insertion into a C--N dimer has substantially reduced energy requirements. In particular, the rate of the key dimer ring-opening and closing mechanism is increased 400-fold in the presence of nitrogen. Full incorporation of the substitutional nitrogen defect is then facilitated through charge transfer of an electron from the nitrogen lone pair to charge acceptors on the surface. This work provides a compelling mechanism for the role of surface-embedded nitrogen in enhancing (100) diamond growth through the nucleation of new layers. Furthermore, it demonstrates a pathway for substitutional nitrogen formation during chemical vapour deposition which can be extended to study the creation of technologically relevant nitrogen-based defects. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Comments: main text: 19 pages, 9 figures supplementary: 10 pages, 10 figures

Comparison of different methods of nitrogen-vacancy layer formation in diamond for widefield quantum microscopy

Authors: A. J. Healey, A. Stacey, B. C. Johnson, D. A. Broadway, T. Teraji, D. A. Simpson, J. -P. Tetienne, L. C. L. Hollenberg

Abstract: Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based widefield magnetic microscopy, which has applications in physics, geology and biology. Several methods exist to create such NV layers, which generally involve incorporating nitrogen atoms (N) and vacancies (V) into the diamond through growth and/or irradiation. While there have been detail… ▽ More Thin layers of near-surface nitrogen-vacancy (NV) defects in diamond substrates are the workhorse of NV-based widefield magnetic microscopy, which has applications in physics, geology and biology. Several methods exist to create such NV layers, which generally involve incorporating nitrogen atoms (N) and vacancies (V) into the diamond through growth and/or irradiation. While there have been detailed studies of individual methods, a direct side-by-side experimental comparison of the resulting magnetic sensitivities is still missing. Here we characterise, at room and cryogenic temperatures, $\approx100$ nm thick NV layers fabricated via three different methods: 1) low-energy carbon irradiation of N-rich high-pressure high-temperature (HPHT) diamond, 2) carbon irradiation of $δ$-doped chemical vapour deposition (CVD) diamond, 3) low-energy N$^+$ or CN$^-$ implantation into N-free CVD diamond. Despite significant variability within each method, we find that the best HPHT samples yield similar magnetic sensitivities (within a factor 2 on average) to our $δ$-doped samples, of $<2$~$μ$T Hz$^{-1/2}$ for DC magnetic fields and $<100$~nT Hz$^{-1/2}$ for AC fields (for a $400$~nm~$\times~400$~nm pixel), while the N$^+$ and CN$^-$ implanted samples exhibit an inferior sensitivity by a factor 2-5, at both room and low temperature. We also examine the crystal lattice strain caused by the respective methods and discuss the implications this has for widefield NV imaging. The pros and cons of each method, and potential future improvements, are discussed. This study highlights that low-energy irradiation of HPHT diamond, despite its relative simplicity and low cost, is a competitive method to create thin NV layers for widefield magnetic imaging. △ Less

Submitted 9 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Materials 4, 104605 (2020)

Epitaxial growth of SiC on (100) Diamond

Authors: A. Tsai, A. Aghajamali, N. Dontschuk, B. C. Johnson, M. Usman, A. K. Schenk, M. Sear, C. I. Pakes, L. C. L. Hollenberg, J. C. McCallum, S. Rubanov, A. Tadich, N. A. Marks, A. Stacey

Abstract: We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the inter… ▽ More We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch. △ Less

Submitted 17 February, 2020; originally announced February 2020.

Comments: 16 pages, 4 figures

Enhanced widefield quantum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays

Authors: D. J. McCloskey, N. Dontschuk, D. A. Broadway, A. Nadarajah, A. Stacey, J. -P. Tetienne, L. C. L. Hollenberg, S. Prawer, D. A. Simpson

Abstract: Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter… ▽ More Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter regime for this purpose, but their applicability to widefield sensing with NV ensembles remains largely unexplored. Here we fabricate and characterize closely-packed arrays of diamond nanopillars, each hosting its own dense, near-surface ensemble of NV centres. We explore the optimal geometry for diamond nanopillars hosting NV ensembles and realise enhanced spin and photoluminescence properties which lead to increased measurement sensitivities (greater than a factor of 3) when compared to unpatterned surfaces. Utilising the increased measurement sensitivity, we image the mechanical stress tensor in each nanopillar across the arrays and show the fabrication process has negligible impact on in-built stress compared to the unpatterned surface. Our results demonstrate that photonic nanostructuring of the diamond surface is a viable strategy for increasing the sensitivity of ensemble-based widefield sensing and imaging. △ Less

Submitted 6 February, 2019; originally announced February 2019.

Comments: 7 pages, 4 figures

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

Authors: D. A. Broadway, B. C. Johnson, M. S. J. Barson, S. E. Lillie, N. Dontschuk, D. J. McCloskey, A. Tsai, T. Teraji, D. A. Simpson, A. Stacey, J. C. McCallum, J. E. Bradby, M. W. Doherty, L. C. L. Hollenberg, J. -P. Tetienne

Abstract: The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stre… ▽ More The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Comments: 20 pages including SI

Journal ref: Nano Lett. 19, 4543-4550 (2019)

Origins of diamond surface noise probed by correlating single spin measurements with surface spectroscopy

Authors: Sorawis Sangtawesin, Bo L. Dwyer, Srikanth Srinivasan, James J. Allred, Lila V. H. Rodgers, Kristiaan De Greve, Alastair Stacey, Nikolai Dontschuk, Kane M. O'Donnell, Di Hu, D. Andrew Evans, Cherno Jaye, Daniel A. Fischer, Matthew L. Markham, Daniel J. Twitchen, Hongkun Park, Mikhail D. Lukin, Nathalie P. de Leon

Abstract: The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometer… ▽ More The nitrogen vacancy (NV) center in diamond exhibits spin-dependent fluorescence and long spin coherence times under ambient conditions, enabling applications in quantum information processing and sensing. NV centers near the surface can have strong interactions with external materials and spins, enabling new forms of nanoscale spectroscopy. However, NV spin coherence degrades within 100 nanometers of the surface, suggesting that diamond surfaces are plagued with ubiquitous defects. Prior work on characterizing near-surface noise has primarily relied on using NV centers themselves as probes; while this has the advantage of exquisite sensitivity, it provides only indirect information about the origin of the noise. Here we demonstrate that surface spectroscopy methods and single spin measurements can be used as complementary diagnostics to understand sources of noise. We find that surface morphology is crucial for realizing reproducible chemical termination, and use these insights to achieve a highly ordered, oxygen-terminated surface with suppressed noise. We observe NV centers within 10 nm of the surface with coherence times extended by an order of magnitude. △ Less

Submitted 31 October, 2018; originally announced November 2018.

Journal ref: Phys. Rev. X 9, 031052 (2019)

Apparent delocalisation of the current flow in metallic wires observed with diamond nitrogen-vacancy magnetometry

Authors: J. -P. Tetienne, N. Dontschuk, D. A. Broadway, S. E. Lillie, T. Teraji, D. A. Simpson, A. Stacey, L. C. L. Hollenberg

Abstract: We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic micro-wires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centres engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically-detected magnetic resonance… ▽ More We report on a quantitative analysis of the magnetic field generated by a continuous current running in metallic micro-wires fabricated on an electrically insulating diamond substrate. A layer of nitrogen-vacancy (NV) centres engineered near the diamond surface is employed to obtain spatial maps of the vector magnetic field, by measuring Zeeman shifts through optically-detected magnetic resonance spectroscopy. The in-plane magnetic field (i.e. parallel to the diamond surface) is found to be significantly weaker than predicted, while the out-of-plane field also exhibits an unexpected modulation. We show that the measured magnetic field is incompatible with Ampere's circuital law or Gauss's law for magnetism when we assume that the current is confined to the metal, independent of the details of the current density. This result was reproduced in several diamond samples, with a measured deviation from Ampere's law by as much as 94(6)\%. To resolve this apparent magnetic anomaly, we introduce a generalised description whereby the current is allowed to flow both above the NV sensing layer (including in the metallic wire) and below the NV layer (i.e. in the diamond). Inversion of the Biot-Savart law within this two-channel description leads to a unique solution for the two current densities, which completely explains the data, is consistent with the laws of classical electrodynamics and indicates a total NV-measured current that closely matches the electrically-measured current. However, this description also leads to the surprising conclusion that in certain circumstances the majority of the current appears to flow in the diamond substrate rather than in the metallic wire, and to spread laterally in the diamond by several micrometres away from the wire. No electrical conduction was observed between nearby test wires, ruling out a conventional conductivity effect. [...] △ Less

Submitted 17 December, 2018; v1 submitted 2 October, 2018; originally announced October 2018.

Comments: Includes new data and discussions

Journal ref: Phys. Rev. B 99, 014436 (2019)

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Authors: D. A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T. -K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg, J. -P. Tetienne

Abstract: Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are… ▽ More Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Comments: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-0

Journal ref: Nature Electronics 1, 502-507 (2018)

Irradiation induced modification of the superconducting properties of heavily boron doped diamond

Authors: Daniel Creedon, Yi Jiang, Kumaravelu Ganesan, Alastair Stacey, Taisuke Kageura, Hiroshi Kawarada, Jeffrey McCallum, Brett Johnson, Steven Prawer, David Jamieson

Abstract: Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for s… ▽ More Diamond, a wide band-gap semiconductor, can be engineered to exhibit superconductivity when doped heavily with boron. The phenomena has been demonstrated in samples grown by chemical vapour deposition where the boron concentration exceeds the critical concentration for the metal-to-insulator transition of $n_{MIT} \gtrsim 4\times10^{20}/\text{cm}^3$. While the threshold carrier concentration for superconductivity is generally well established in the literature, it is unclear how well correlated higher critical temperatures are with increased boron concentration. Previous studies have generally compared several samples grown under different plasma conditions, or on substrates having different crystallographic orientations, in order to vary the incorporation of boron into the lattice. Here, we present a study of a single sample with unchanging boron concentration, and instead modify the charge carrier concentration by introducing compensating defects via high energy ion irradiation. Superconductivity is completely suppressed when the number of defects is sufficient to compensate the hole concentration to below threshold. Furthermore, we show it is possible to recover the superconductivity by annealing the sample in vacuum to remove the compensating defects. △ Less

Submitted 5 September, 2018; originally announced September 2018.

Evidence for Primal sp2 Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources

Authors: Alastair Stacey, Nikolai Dontschuk, Jyh-Pin Chou, David A. Broadway, Alex Schenk, Michael J. Sear, Jean-Philippe Tetienne, Alon Hoffman, Steven Prawer, Chris I. Pakes, Anton Tadich, Nathalie P. de Leon, Adam Gali, Lloyd C. L. Hollenberg

Abstract: Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for these applications is often limited by the uncontrolled nature of the diamond material surface, which suffers from Fermi-level pinning and hosts a significant densi… ▽ More Diamond materials are central to an increasing range of advanced technological demonstrations, from high power electronics, to nano-scale quantum bio-imaging with unprecedented sensitivity. However, the full exploitation of diamond for these applications is often limited by the uncontrolled nature of the diamond material surface, which suffers from Fermi-level pinning and hosts a significant density of electro-magnetic noise sources. These issues occur despite the oxide-free and air-stable nature of the diamond crystal surface, which should be an ideal candidate for functionalization and chemical-engineering. In this work we reveal a family of previously unidentified and near-ubiquitous primal surface defects which we assign to differently reconstructed surface vacancies. The density of these defects is quantified with X-ray absorption spectroscopy, their energy structures are elucidated by ab initio calculations, and their effect on near-surface quantum probes is measured directly. Subsequent ab-initio calculation of band-bending from these defects suggest they are the source of Fermi-level pinning at most diamond surfaces. Finally, an investigation is conducted on a broad range of post-growth surface treatments and concludes that none of them can reproducibly reduce this defect density below the Fermi-pinning threshold, making this defect a prime candidate as the source for decoherence-limiting noise in near-surface quantum probes. △ Less

Submitted 9 July, 2018; originally announced July 2018.

Comments: 12 pages, 3 figures; SI: 10 pages, 10 figures

Proximity-induced artefacts in magnetic imaging with nitrogen-vacancy ensembles in diamond

Authors: J. -P. Tetienne, D. A. Broadway, S. E. Lillie, N. Dontschuk, T. Teraji, L. T. Hall, A. Stacey, D. A. Simpson, L. C. L. Hollenberg

Abstract: Magnetic imaging with ensembles of nitrogen-vacancy (NV) centres in diamond is a recently developed technique that allows for quantitative vector field mapping. Here we uncover a source of artefacts in the measured magnetic field in situations where the magnetic sample is placed in close proximity (a few tens of nm) to the NV sensing layer. Using magnetic nanoparticles as a test sample, we find th… ▽ More Magnetic imaging with ensembles of nitrogen-vacancy (NV) centres in diamond is a recently developed technique that allows for quantitative vector field mapping. Here we uncover a source of artefacts in the measured magnetic field in situations where the magnetic sample is placed in close proximity (a few tens of nm) to the NV sensing layer. Using magnetic nanoparticles as a test sample, we find that the measured field deviates significantly from the calculated field, in shape, amplitude and even in sign. By modelling the full measurement process, we show that these discrepancies are caused by the limited measurement range of NV sensors combined with the finite spatial resolution of the optical readout. We numerically investigate the role of the stand-off distance to identify an artefact-free regime, and discuss an application to ultrathin materials. This work provides a guide to predict and mitigate proximity-induced artefacts that can arise in NV-based wide-field magnetic imaging, and also demonstrates that the sensitivity of these artefacts to the sample can make them a useful tool for magnetic characterisation. △ Less

Submitted 26 March, 2018; originally announced March 2018.

Comments: Submitted to Sensors (Special Issue: Sensors based on Quantum Phenomena)

Journal ref: Sensors 18, 1290 (2018)

Impact of surface functionalisation on the quantum coherence of nitrogen vacancy centres in nanodiamond

Authors: R. G. Ryan, A. Stacey, K. M. O'Donnell, T. Ohshima, B. C. Johnson, L. C. L. Hollenberg, P. Mulvaney, D. A. Simpson

Abstract: Nanoscale quantum probes such as the nitrogen-vacancy centre in diamond have demonstrated remarkable sensing capabilities over the past decade as control over the fabrication and manipulation of these systems has evolved. However, as the size of these nanoscale quantum probes is reduced, the surface termination of the host material begins to play a prominent role as a source of magnetic and electr… ▽ More Nanoscale quantum probes such as the nitrogen-vacancy centre in diamond have demonstrated remarkable sensing capabilities over the past decade as control over the fabrication and manipulation of these systems has evolved. However, as the size of these nanoscale quantum probes is reduced, the surface termination of the host material begins to play a prominent role as a source of magnetic and electric field noise. In this work, we show that borane-reduced nanodiamond surfaces can on average double the spin relaxation time of individual nitrogen-vacancy centres in nanodiamonds when compared to the thermally oxidised surfaces. Using a combination of infra-red and x-ray absorption spectroscopy techniques, we correlate the changes in quantum relaxation rates with the conversion of sp2 carbon to C-O and C-H bonds on the diamond surface. These findings implicate double-bonded carbon species as a dominant source of spin noise for near surface NV centres and show that through tailored engineering of the surface, we can improve the quantum properties and magnetic sensitivity of these nanoscale probes. △ Less

Submitted 22 April, 2018; v1 submitted 15 November, 2017; originally announced November 2017.

Comments: 15 pages, 4 figures

Journal ref: ACS Applied Materials and Interfaces 10, 13143 (2008)

Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond

Authors: J. -P. Tetienne, R. W. de Gille, D. A. Broadway, T. Teraji, S. E. Lillie, J. M. McCoey, N. Dontschuk, L. T. Hall, A. Stacey, D. A. Simpson, L. C. L. Hollenberg

Abstract: We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage… ▽ More We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy ($4-30$~keV) and dose ($5\times10^{11}-10^{13}$~ions/cm$^2$) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at $\geq1100^\circ$C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving $\approx10$-17~nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications. △ Less

Submitted 4 February, 2018; v1 submitted 13 November, 2017; originally announced November 2017.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 97, 085402 (2018)

Quantum probe hyperpolarisation of molecular nuclear spins

Authors: David A. Broadway, Jean-Philippe Tetienne, Alastair Stacey, James D. A. Wood, David A. Simpson, Liam T. Hall, Lloyd C. L. Hollenberg

Abstract: The hyperpolarisation of nuclear spins within target molecules is a critical and complex challenge in magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) spectroscopy. Hyperpolarisation offers enormous gains in signal and spatial resolution which may ultimately lead to the development of molecular MRI and NMR. At present, techniques used to polarise nuclear spins generally requir… ▽ More The hyperpolarisation of nuclear spins within target molecules is a critical and complex challenge in magnetic resonance imaging (MRI) and nuclear magnetic resonance (NMR) spectroscopy. Hyperpolarisation offers enormous gains in signal and spatial resolution which may ultimately lead to the development of molecular MRI and NMR. At present, techniques used to polarise nuclear spins generally require low temperatures and/or high magnetic fields, radio-frequency control fields, or the introduction of catalysts or free-radical mediators. The emergence of room temperature solid-state spin qubits has opened exciting new pathways to circumvent these requirements to achieve direct nuclear spin hyperpolarisation using quantum control. Employing a novel cross-relaxation induced polarisation (CRIP) protocol using a single nitrogen-vacancy (NV) centre in diamond, we demonstrate the first external nuclear spin hyperpolarisation achieved by a quantum probe, in this case of $^1$H molecular spins in poly(methyl methacrylate). In doing so, we show that a single qubit is capable of increasing the thermal polarisation of $\sim 10^6$ nuclear spins by six orders of magnitude, equivalent to an applied magnetic field of $10^5$\,T. The technique can also be tuned to multiple spin species, which we demonstrate using both \C{13} and $^1$H nuclear spin ensembles. Our results are analysed and interpreted via a detailed theoretical treatment, which is also used to describe how the system can be scaled up to a universal quantum hyperpolarisation platform for the production of macroscopic quantities of contrast agents at high polarisation levels for clinical applications. These results represent a new paradigm for nuclear spin hyperpolarisation for molecular imaging and spectroscopy, and beyond into areas such as materials science and quantum information processing. △ Less

Submitted 22 August, 2017; v1 submitted 19 August, 2017; originally announced August 2017.

Comments: 6 pages, 4 figures

Environmentally mediated coherent control of a spin qubit in diamond

Authors: Scott E. Lillie, David A. Broadway, James D. A. Wood, David A. Simpson, Alastair Stacey, Jean-Philippe Tetienne, Lloyd C. L. Hollenberg

Abstract: The coherent control of spin qubits forms the basis of many applications in quantum information processing and nanoscale sensing, imaging and spectroscopy. Such control is conventionally achieved by direct driving of the qubit transition with a resonant global field, typically at microwave frequencies. Here we introduce an approach that relies on the resonant driving of nearby environment spins, w… ▽ More The coherent control of spin qubits forms the basis of many applications in quantum information processing and nanoscale sensing, imaging and spectroscopy. Such control is conventionally achieved by direct driving of the qubit transition with a resonant global field, typically at microwave frequencies. Here we introduce an approach that relies on the resonant driving of nearby environment spins, whose localised magnetic field in turn drives the qubit when the environmental spin Rabi frequency matches the qubit resonance. This concept of environmentally mediated resonance (EMR) is explored experimentally using a qubit based on a single nitrogen-vacancy (NV) centre in diamond, with nearby electronic spins serving as the environmental mediators. We demonstrate EMR driven coherent control of the NV spin-state, including the observation of Rabi oscillations, free induction decay, and spin-echo. This technique also provides a way to probe the nanoscale environment of spin qubits, which we illustrate by acquisition of electron spin resonance spectra of single NV centres in various settings. △ Less

Submitted 19 February, 2017; originally announced February 2017.

Comments: 12 pages including SI

Journal ref: Phys. Rev. Lett. 118, 167204 (2017)

Microwave-Free Nuclear Magnetic Resonance at Molecular Scales

Authors: James D. A. Wood, Jean-Philippe Tetienne, David A. Broadway, Liam T. Hall, David A. Simpson, Alastair Stacey, Lloyd C. L. Hollenberg

Abstract: The implementation of nuclear magnetic resonance (NMR) at the nanoscale is a major challenge, as conventional systems require relatively large ensembles of spins and limit resolution to mesoscopic scales. New approaches based on quantum spin probes, such as the nitrogen-vacancy (NV) centre in diamond, have recently achieved nano-NMR under ambient conditions. However, the measurement protocols requ… ▽ More The implementation of nuclear magnetic resonance (NMR) at the nanoscale is a major challenge, as conventional systems require relatively large ensembles of spins and limit resolution to mesoscopic scales. New approaches based on quantum spin probes, such as the nitrogen-vacancy (NV) centre in diamond, have recently achieved nano-NMR under ambient conditions. However, the measurement protocols require application of complex microwave pulse sequences of high precision and relatively high power, placing limitations on the design and scalability of these techniques. Here we demonstrate a microwave-free method for nanoscale NMR using the NV centre, which is a far less invasive, and vastly simpler measurement protocol. By utilising a carefully tuned magnetic cross-relaxation interaction between a subsurface NV spin and an external, organic environment of proton spins, we demonstrate NMR spectroscopy of $^1$H within a $\approx(10~{\rm nm})^3$ sensing volume. We also theoretically and experimentally show that the sensitivity of our approach matches that of existing microwave control-based techniques using the NV centre. Removing the requirement for coherent manipulation of either the NV or the environmental spin quantum states represents a significant step towards the development of robust, non-invasive nanoscale NMR probes. △ Less

Submitted 6 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Journal ref: Nature Communications 8:15950 (2017)

Quantum imaging of current flow in graphene

Authors: Jean-Philippe Tetienne, Nikolai Dontschuk, David A. Broadway, Alastair Stacey, David A. Simpson, Lloyd C. L. Hollenberg

Abstract: Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous opportunities for future electronic and sensing devices. However, to fully realise these goals a major challenge is the ability to non-invasively image charge curren… ▽ More Since its first isolation in 2004, graphene has been found to host a plethora of unusual electronic transport phenomena, making it a fascinating system for fundamental studies in condensed-matter physics as well as offering tremendous opportunities for future electronic and sensing devices. However, to fully realise these goals a major challenge is the ability to non-invasively image charge currents in monolayer graphene structures and devices. Typically, electronic transport in graphene has been investigated via resistivity measurements, however, such measurements are generally blind to spatial information critical to observing and studying landmark transport phenomena such as electron guiding and focusing, topological currents and viscous electron backflow in real space, and in realistic imperfect devices. Here we bring quantum imaging to bear on the problem and demonstrate high-resolution imaging of current flow in graphene structures. Our method utilises an engineered array of near-surface, atomic-sized quantum sensors in diamond, to map the vector magnetic field and reconstruct the vector current density over graphene geometries of varying complexity, from mono-ribbons to junctions, with spatial resolution at the diffraction limit and a projected sensitivity to currents as small as 1 μA. The measured current maps reveal strong spatial variations corresponding to physical defects at the sub-μm scale. The demonstrated method opens up an important new avenue to investigate fundamental electronic and spin transport in graphene structures and devices, and more generally in emerging two-dimensional materials and thin film systems. △ Less

Submitted 29 September, 2016; originally announced September 2016.

Comments: 10 pages, 4 figures; SI: 15 pages, 8 figures

Journal ref: Sci. Adv. 3:e1602429 (2017)

Spin dynamics of diamond nitrogen-vacancy centres at the ground state level anti-crossing and all-optical low frequency magnetic field sensing

Authors: David A. Broadway, James D. A. Wood, Liam T. Hall, Alastair Stacey, Matthew Markham, David A. Simpson, Jean-Philippe Tetienne, Lloyd C. L. Hollenberg

Abstract: We investigate the photo-induced spin dynamics of single nitrogen-vacancy (NV) centres in diamond near the electronic ground state level anti-crossing (GSLAC), which occurs at an axial magnetic field around 1024 G. Using optically detected magnetic resonance spectroscopy, we first find that the electron spin transition frequency can be tuned down to 100 kHz for the \NV{14} centre, while for the \N… ▽ More We investigate the photo-induced spin dynamics of single nitrogen-vacancy (NV) centres in diamond near the electronic ground state level anti-crossing (GSLAC), which occurs at an axial magnetic field around 1024 G. Using optically detected magnetic resonance spectroscopy, we first find that the electron spin transition frequency can be tuned down to 100 kHz for the \NV{14} centre, while for the \NV{15} centre the transition strength vanishes for frequencies below about 2 MHz owing to the GSLAC level structure. Using optical pulses to prepare and readout the spin state, we observe coherent spin oscillations at 1024 G for the \NV{14}, which originate from spin mixing induced by residual transverse magnetic fields. This effect is responsible for limiting the smallest observable transition frequency, which can span two orders of magnitude from 100 kHz to tens of MHz depending on the local magnetic noise. A similar feature is observed for the \NV{15} centre at 1024 G. As an application of these findings, we demonstrate all-optical detection and spectroscopy of externally-generated fluctuating magnetic fields at frequencies from 8 MHz down to 500 kHz, using a \NV{14} centre. Since the Larmor frequency of most nuclear spin species lies within this frequency range near the GSLAC, these results pave the way towards all-optical, nanoscale nuclear magnetic resonance spectroscopy, using longitudinal spin cross-relaxation. △ Less

Submitted 14 July, 2016; originally announced July 2016.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 6, 064001 (2016)

Extremely high negative electron affinity of diamond via magnesium adsorption

Authors: Kane M. O'Donnell, Mark T. Edmonds, Anton Tadich, Lars Thomsen, Alastair Stacey, Alex Schenk, Chris I. Pakes, Lothar Ley

Abstract: We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorptio… ▽ More We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorption properties between the two. Most importantly, a high-temperature annealing step is not required to activate the Mg-adsorbed surface to a state of negative electron affinity. Diamond surfaces prepared by this procedure continue to possess negative electron affinity after exposure to high temperatures, air and even immersion in water. △ Less

Submitted 20 June, 2015; v1 submitted 24 May, 2015; originally announced May 2015.

Comments: 7 pages, 5 figures

Spectroscopy of Surface-Induced Noise Using Shallow Spins in Diamond

Authors: Y. Romach, C. Muller, T. Unden, L. J. Rogers, T. Isoda, K. M. Itoh, M. Markham, A. Stacey, J. Meijer, S. Pezzagna, B. Naydenov, L. P. McGuinness, N. Bar-Gill, F. Jelezko

Abstract: We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectra consistent with a surface electronic spin bath, with slower dynamics due to spin-spin interactions and faster dynamics related to phononic coupling. These results shed new li… ▽ More We report on the noise spectrum experienced by few nanometer deep nitrogen-vacancy centers in diamond as a function of depth, surface coating, magnetic field and temperature. Analysis reveals a double-Lorentzian noise spectra consistent with a surface electronic spin bath, with slower dynamics due to spin-spin interactions and faster dynamics related to phononic coupling. These results shed new light on the mechanisms responsible for surface noise affecting shallow spins at semiconductor interfaces, and suggests possible directions for further studies. We demonstrate dynamical decoupling from the surface noise, paving the way to applications ranging from nanoscale NMR to quantum networks. △ Less

Submitted 25 February, 2015; v1 submitted 15 April, 2014; originally announced April 2014.

Journal ref: Phys. Rev. Lett. 114, 017601 (2015)

Electronic properties and metrology of the diamond NV- center under pressure

Authors: Marcus W. Doherty, Viktor V. Struzhkin, David A. Simpson, Liam P. McGuinness, Yufei Meng, Alastair Stacey, Timothy J. Karle, Russell J. Hemley, Neil B. Manson, Lloyd C. L. Hollenberg, Steven Prawer

Abstract: The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the center's optical and spin resonances are observed under hydrostatic pressures up to 60 GPa. Our observations motivate powerful new techniques to measure pressure and image high pressure magnetic and electric phenomena. Our observations further reveal a fundamental inadequacy… ▽ More The negatively charged nitrogen-vacancy (NV-) center in diamond has realized new frontiers in quantum technology. Here, the center's optical and spin resonances are observed under hydrostatic pressures up to 60 GPa. Our observations motivate powerful new techniques to measure pressure and image high pressure magnetic and electric phenomena. Our observations further reveal a fundamental inadequacy of the current model of the center and provide new insight into its electronic structure. △ Less

Submitted 7 October, 2013; v1 submitted 10 May, 2013; originally announced May 2013.

Comments: 6 pages, 3 figures

Journal ref: Physical Review Letters 112, 047601 (2014)

Ambient Nanoscale Sensing with Single Spins Using Quantum Decoherence

Authors: L. P. McGuinness, L. T. Hall, A. Stacey, D. A. Simpson, C. D. Hill, J. H. Cole, K. Ganesan, B. C. Gibson, S. Prawer, P. Mulvaney, F. Jelezko, J. Wrachtrup, R. E. Scholten, L. C. L. Hollenberg

Abstract: Magnetic resonance detection is one of the most important tools used in life-sciences today. However, as the technique detects the magnetization of large ensembles of spins it is fundamentally limited in spatial resolution to mesoscopic scales. Here we detect the natural fluctuations of nanoscale spin ensembles at ambient temperatures by measuring the decoherence rate of a single quantum spin in r… ▽ More Magnetic resonance detection is one of the most important tools used in life-sciences today. However, as the technique detects the magnetization of large ensembles of spins it is fundamentally limited in spatial resolution to mesoscopic scales. Here we detect the natural fluctuations of nanoscale spin ensembles at ambient temperatures by measuring the decoherence rate of a single quantum spin in response to introduced extrinsic target spins. In our experiments 45 nm nanodiamonds with single nitrogen-vacancy (NV) spins were immersed in solution containing spin 5/2 Mn^2+ ions and the NV decoherence rate measured though optically detected magnetic resonance. The presence of both freely moving and accreted Mn spins in solution were detected via significant changes in measured NV decoherence rates. Analysis of the data using a quantum cluster expansion treatment of the NV-target system found the measurements to be consistent with the detection of ~2,500 motionally diffusing Mn spins over an effective volume of (16 nm)^3 in 4.2 s, representing a reduction in target ensemble size and acquisition time of several orders of magnitude over state-of-the-art electron spin resonance detection. These measurements provide the basis for the detection of nanoscale magnetic field fluctuations with unprecedented sensitivity and resolution in ambient conditions. △ Less

Submitted 25 November, 2012; originally announced November 2012.

Comments: 9 pages, 5 figures

Journal ref: New J. Phys., 15, 073042, 2013

Enhanced metrology using preferential orientation of nitrogen-vacancy centers in diamond

Authors: L. M. Pham, N. Bar-Gill, D. Le Sage, A. Stacey, M. Markham, D. J. Twitchen, M. D. Lukin, R. L. Walsworth

Abstract: We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical read-out contrast for NV multi-spin measurements, i… ▽ More We demonstrate preferential orientation of nitrogen-vacancy (NV) color centers along two of four possible crystallographic axes in diamonds grown by chemical vapor deposition on the {100} face. We identify the relevant growth regime and present a possible explanation of this effect. We show that preferential orientation provides increased optical read-out contrast for NV multi-spin measurements, including enhanced AC magnetic field sensitivity, thus providing an important step towards high fidelity multi-spin-qubit quantum information processing, sensing and metrology. △ Less

Submitted 13 July, 2012; originally announced July 2012.

Comments: 5 pages, 3 figures

Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond

Authors: V. M. Acosta, C. Santori, A. Faraon, Z. Huang, K. -M. C. Fu, A. Stacey, D. A. Simpson, S. Tomljenovic-Hanic, K. Ganesan, A. D. Greentree, S. Prawer, R. G. Beausoleil

Abstract: We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transition… ▽ More We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales greater than ~100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultra-pure diamond). These techniques should improve the entanglement success probability in quantum communications protocols. △ Less

Submitted 3 April, 2012; v1 submitted 22 December, 2011; originally announced December 2011.

Comments: 6 pages, 3 figures + Supplementary Info (4 pages, 3 figures)

Journal ref: Phys. Rev. Lett. 108, 206401 (2012)

Depletion of nitrogen-vacancy color centers in diamond via hydrogen passivation

Authors: A. Stacey, T. J. Karle, L. P. McGuinness, B. C. Gibson, K. Ganesan, S. Tomljenovic-Hanic, A. D. Greentree, S. Prawer, R. G. Beausoleil, A. Hoffman

Abstract: We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700°C to 1000°C. Significant fluorescence reduction was observed beneath the exposed surface to at least 80mm depth after ~10 minutes, and did not recover after post-annealing in vacuum for seven hours at 1100°C. We attribute… ▽ More We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700°C to 1000°C. Significant fluorescence reduction was observed beneath the exposed surface to at least 80mm depth after ~10 minutes, and did not recover after post-annealing in vacuum for seven hours at 1100°C. We attribute the fluorescence reduction to the formation of NVH centers by the plasma induced diffusion of hydrogen. These results have important implications for the formation of nitrogen-vacancy centers for quantum applications, and inform our understanding of the conversion of nitrogen-vacancy to NVH, whilst also providing the first experimental evidence of long range hydrogen diffusion through intrinsic high-purity diamond material. △ Less

Submitted 30 August, 2011; originally announced August 2011.

Comments: 6 pages, 3 figures

A new, enhanced diamond single photon emitter in the near infra-red

Authors: Igor Aharonovich, Chunyuan Zhou, Alastair Stacey, Julius Orwa, David Simpson, Andrew D. Greentree, Francois Treussart, Jean Francois Roch, Steven Prawer

Abstract: Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated… ▽ More Individual color centers in diamond are promising for near-term quantum technologies including quantum key distribution and metrology. Here we show fabrication of a new color center which has photophysical properties surpassing those of the two main-stay centers, namely the nitrogen vacancy and NE8 centers. The new center is fabricated using focused ion beam implantation of nickel into isolated chemical vapor deposited diamond micro-crystals. Room temperature photoluminescence studies reveal a narrow emission in the near infrared region centered at 768 nm with a lifetime as short as 2 ns. Its focused ion beam compatibility opens the prospect to fabrication with nanometer resolution and realization of integrated quantum photonic devices. Preliminary investigations suggest that this center arises from an as-yet uncharacterized nickel-silicon complex. △ Less

Submitted 18 February, 2009; originally announced February 2009.

Single nitrogen vacancy centers in chemical vapor deposited diamond nanocrystals

Authors: J. R. Rabeau, A. Stacey, A. Rabeau, F. Jelezko, I. Mirza, J. Wrachtrup, S. Prawer

Abstract: Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was m… ▽ More Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size. △ Less

Submitted 25 September, 2007; v1 submitted 17 June, 2007; originally announced June 2007.

Comments: 16 pages, 4 figures, In Print Nano Letters (2007)