Showing 1–2 of 2 results for author: Sreedhara, M B

Growth of epitaxial ReS2 thin film by pulsed laser deposition

Authors: B. Vishal, H. Sharona, U. Bhat, A. Paul, M. B. Sreedhara, V. Rajaji, S. C. Sarma, C. Narayana, S. C. Peter, R. Datta

Abstract: We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. Th… ▽ More We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application. △ Less

Submitted 23 October, 2018; originally announced October 2018.

Chemically stabilized epitaxial wurtzite-BN thin film

Authors: Badri Vishal, Rajendra Singh, Abhishek Chaturvedi, Ankit Sharma, M. B. Sreedhara, Rajib Sahu, Usha Bhat, Upadrasta Ramamurty, Ranjan Datta

Abstract: We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pres… ▽ More We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry. △ Less

Submitted 21 January, 2018; originally announced January 2018.