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Automated Materials Discovery Platform Realized: Scanning Probe Microscopy of Combinatorial Libraries
Authors:
Yu Liu,
Rohit Pant,
Ichiro Takeuchi,
R. Jackson Spurling,
Jon-Paul Maria,
Maxim Ziatdinov,
Sergei V. Kalinin
Abstract:
Combinatorial libraries are a powerful approach for exploring the evolution of physical properties across binary and ternary cross-sections in multicomponent phase diagrams. Although the synthesis of these libraries has been developed since the 1960s and expedited with advanced laboratory automation, the broader application of combinatorial libraries relies on fast, reliable measurements of concen…
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Combinatorial libraries are a powerful approach for exploring the evolution of physical properties across binary and ternary cross-sections in multicomponent phase diagrams. Although the synthesis of these libraries has been developed since the 1960s and expedited with advanced laboratory automation, the broader application of combinatorial libraries relies on fast, reliable measurements of concentration-dependent structures and functionalities. Scanning Probe Microscopies (SPM), including piezoresponse force microscopy (PFM), offer significant potential for quantitative, functionally relevant combi-library readouts. Here we demonstrate the implementation of fully automated SPM to explore the evolution of ferroelectric properties in combinatorial libraries, focusing on Sm-doped BiFeO3 and ZnxMg1-xO systems. We also present and compare Gaussian Process-based Bayesian Optimization models for fully automated exploration, emphasizing local reproducibility (effective noise) as an essential factor in optimal experiment workflows. Automated SPM, when coupled with upstream synthesis controls, plays a pivotal role in bridging materials synthesis and characterization.
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Submitted 23 December, 2024;
originally announced December 2024.
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Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases
Authors:
R. Jackson Spurling,
Saeed S. I. Almishal,
Joseph Casamento,
John Hayden,
Ryan Spangler,
Michael Marakovits,
Arafat Hossain,
Michael Lanagan,
Jon-Paul Maria
Abstract:
We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 °C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and…
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We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 °C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.
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Submitted 6 May, 2024;
originally announced May 2024.
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Coexistence and interplay of two ferroelectric mechanisms in Zn1-xMgxO
Authors:
Jonghee Yang,
Anton V. Ievlev,
Anna N. Morozovska,
Eugene Eliseev,
Jonathan D Poplawsky,
Devin Goodling,
Robert Jackson Spurling,
Jon-Paul Maria,
Sergei V. Kalinin,
Yongtao Liu
Abstract:
Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric-semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal-oxide-s…
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Ferroelectric materials promise exceptional attributes including low power dissipation, fast operational speeds, enhanced endurance, and superior retention to revolutionize information technology. However, the practical application of ferroelectric-semiconductor memory devices has been significantly challenged by the incompatibility of traditional perovskite oxide ferroelectrics with metal-oxide-semiconductor technology. Recent discoveries of ferroelectricity in binary oxides such as Zn1-xMgxO and Hf1-xZrxO have been a focal point of research in ferroelectric information technology. This work investigates the ferroelectric properties of Zn1-xMgxO utilizing automated band excitation piezoresponse force microscopy. Our findings reveal the coexistence of two ferroelectric subsystems within Zn1-xMgxO. We propose a "fringing-ridge mechanism" of polarization switching that is characterized by initial lateral expansion of nucleation without significant propagation in depth, contradicting the conventional domain growth process observed in ferroelectrics. This unique polarization dynamics in Zn1-xMgxO suggests a new understanding of ferroelectric behavior, contributing to both the fundamental science of ferroelectrics and their application in information technology.
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Submitted 13 February, 2024;
originally announced February 2024.
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Strain fluctuations unlock ferroelectricity in wurtzites
Authors:
Steven M. Baksa,
Simon Gelin,
Seda Oturak,
Robert Jackson Spurling,
Alireza Sepehrinezhad,
Leonard Jacques,
Susan E. Trolier-McKinstry,
Adri C. T. van Duin,
Jon-Paul Maria,
Andrew M. Rappe,
Ismaila Dabo
Abstract:
Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,M…
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Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, we explain the origins of ferroelectricity in (Zn,Mg)O, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. We provide concurrent experimental and computational evidence of these effects by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.
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Submitted 11 July, 2024; v1 submitted 9 November, 2023;
originally announced November 2023.
