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Exchange energy of the ferromagnetic electronic ground-state in a monolayer semiconductor
Authors:
Nadine Leisgang,
Dmitry Miserev,
Hinrich Mattiat,
Lukas Schneider,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Martino Poggio,
Richard J. Warburton
Abstract:
Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions…
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Mobile electrons in the semiconductor monolayer-MoS$_2$ form a ferromagnetic state at low temperature. The Fermi sea consists of two circles, one at the $K$-point, the other at the $\tilde{K}$-point, both with the same spin. Here, we present an optical experiment on gated MoS$_2$ at low electron-density in which excitons are injected with known spin and valley quantum numbers. The resulting trions are identified using a model which accounts for the injection process, the formation of antisymmetrized trion states, electron-hole scattering from one valley to the other, and recombination. The results are consistent with a complete spin polarization. From the splittings between different trion states, we measure the exchange energy, $Σ$, the energy required to flip a single spin within the ferromagnetic state, as well as the intervalley Coulomb exchange energy, $J$. We determine $Σ=11.2\,$meV and $J=5\,$meV at $n=1.5 \times 10^{12}\,$cm$^{-2}$, and find that $J$ depends strongly on the electron density, $n$.
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Submitted 3 November, 2023;
originally announced November 2023.
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Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$
Authors:
Lukas Sponfeldner,
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Kenji Watanabe,
Takashi Taniguchi,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek,
Richard J. Warburton
Abstract:
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to…
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The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.
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Submitted 9 August, 2021;
originally announced August 2021.
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Giant Stark splitting of an exciton in bilayer MoS$_2$
Authors:
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Lukas Sponfeldner,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Richard J. Warburton,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie…
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Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons.
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Submitted 18 June, 2021; v1 submitted 6 February, 2020;
originally announced February 2020.
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First-order magnetic phase-transition of mobile electrons in monolayer MoS$_2$
Authors:
Jonas Gaël Roch,
Dmitry Miserev,
Guillaume Froehlicher,
Nadine Leisgang,
Lukas Sponfeldner,
Kenji Watanabe,
Takashi Taniguchi,
Jelena Klinovaja,
Daniel Loss,
Richard John Warburton
Abstract:
Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the…
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Evidence is presented for a first-order magnetic phase transition in a gated two-dimensional semiconductor, monolayer-MoS$_2$. The phase boundary separates a spin-polarised (ferromagnetic) phase at low electron density and a paramagnetic phase at high electron density. Abrupt changes in the optical response signal an abrupt change in the magnetism. The magnetic order is thereby controlled via the voltage applied to the gate electrode of the device. Accompanying the change in magnetism is a large change in the electron effective mass.
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Submitted 22 November, 2019;
originally announced November 2019.
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Ballistic and resonant negative photocurrents in semiconducting carbon nanotubes
Authors:
Christoph Karnetzky,
Lukas Sponfeldner,
Max Engl,
Alexander W. Holleitner
Abstract:
Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without…
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Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands.
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Submitted 9 January, 2017;
originally announced January 2017.