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Structural and optical properties of high quality zinc-blende/wurtzite GaAs hetero-nanowires
Authors:
D. Spirkoska,
J. Arbiol,
A. Gustafsson,
S. Conesa-Boj,
F. Glas,
I. Zardo,
M. Heigoldt,
M. H. Gass,
A. L. Bleloch,
S. Estrade,
M. Kaniber,
J. Rossler,
F. Peiro,
J. R. Morante,
L. Samuelson,
G. Abstreiter,
A. Fontcuberta i Morral
Abstract:
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.5…
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The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases are observed by transmission electron microscopy in the nanowires. Sharp photoluminescence lines are observed with emission energies tuned from 1.515 eV down to 1.43 eV when the percentage of wurtzite is increased. The downward shift of the emission peaks can be understood by carrier confinement at the interfaces, in quantum wells and in random short period superlattices existent in these nanowires, assuming a staggered band-offset between wurtzite and zinc-blende GaAs. The latter is confirmed also by time resolved measurements. The extremely local nature of these optical transitions is evidenced also by cathodoluminescence measurements. Raman spectroscopy on single wires shows different strain conditions, depending on the wurtzite content which affects also the band alignments. Finally, the occurrence of the two crystallographic phases is discussed in thermodynamic terms.
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Submitted 9 July, 2009;
originally announced July 2009.
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Photocurrent and Photoconductance Properties of a GaAs Nanowire
Authors:
S. Thunich,
L. Prechtel,
D. Spirkoska,
G. Abstreiter,
A. Fontcuberta i Morral,
A. W. Holleitner
Abstract:
We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoco…
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We report on photocurrent and photoconductance processes in a freely suspended p-doped single GaAs nanowire. The nanowires are grown by molecular beam epitaxy (MBE), and they are electrically contacted by a focused ion beam (FIB) deposition technique. The observed photocurrent is generated at the Schottky contacts between the nanowire and metal source-drain electrodes, while the observed photoconductance signal can be explained by a photogating effect induced by optically generated charge carriers located at the surface of the nanowire. Both optoelectronic effects are sensitive to the polarization of the exciting laser field, enabling polarization dependent photodetectors.
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Submitted 22 May, 2009;
originally announced May 2009.
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Size dependence of the bulk and surface phonon modes of gallium arsenide nanowires as measured by Raman Spectroscopy
Authors:
Dance Spirkoska,
Gerhard Abstreiter,
Anna Fontcuberta I Morral
Abstract:
Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured. The small line width of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower fr…
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Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured. The small line width of the optical phonon modes agree with an excellent crystalline quality. A surface phonon mode was also revealed, as a shoulder at lower frequencies of the longitudinal optical mode. In agreement with the theory, the surface mode shifts to lower wave numbers when the diameter of the nanowires is decreased or the environment dielectric constant increased.
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Submitted 23 April, 2008;
originally announced April 2008.
