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Strong Confinment of optical fields using localised surface phonon polaritons in cubic Boron Nitride
Authors:
Ioannis Chatzakis,
Athith Krishna,
James Culbertson,
Nicholas Sharac,
Alexander J. Giles,
Michael G. Spencer,
a nd Joshua D. Caldwell
Abstract:
Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of infrared photons with the bound ionic lattice of a polar crystal. Cubic-Boron nitride (cBN) is such a polar, semiconductor material, which due to the light atomic masses can support high frequency optical phonons. Here, we report on random arrays of cBN nanostructures fabricated via an unpatterned rea…
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Phonon polaritons (PhPs) are long-lived electromagnetic modes that originate from the coupling of infrared photons with the bound ionic lattice of a polar crystal. Cubic-Boron nitride (cBN) is such a polar, semiconductor material, which due to the light atomic masses can support high frequency optical phonons. Here, we report on random arrays of cBN nanostructures fabricated via an unpatterned reactive ion etching process. FTIR reflection spectra suggest the presence of localized surface PhPs within the Reststrahlen band, with quality factors in excess of 38 observed. These can provide the basis of next generation infrared optical components like antennas for communication, improved chemical spectroscopies, and enhanced emitters, sources and detectors.
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Submitted 28 December, 2018;
originally announced December 2018.
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Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
Authors:
Nicholas R. Jungwirth,
Brian Calderon,
Yanxin Ji,
Michael G. Spencer,
Michael E. Flatté,
Gregory D. Fuchs
Abstract:
We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally-resolved photon-correlation measurements verify single photon emissio…
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We investigate the distribution and temperature-dependent optical properties of sharp, zero-phonon emission from defect-based single photon sources in multilayer hexagonal boron nitride (h-BN) flakes. We observe sharp emission lines from optically active defects distributed across an energy range that exceeds 500 meV. Spectrally-resolved photon-correlation measurements verify single photon emission, even when multiple emission lines are simultaneously excited within the same h-BN flake. We also present a detailed study of the temperature-dependent linewidth, spectral energy shift, and intensity for two different zero-phonon lines centered at 575 nm and 682 nm, which reveals a nearly identical temperature dependence despite a large difference in transition energy. Our temperature-dependent results are best described by a lattice vibration model that considers piezoelectric coupling to in-plane phonons. Finally, polarization spectroscopy measurements suggest that whereas the 575 nm emission line is directly excited by 532 nm excitation, the 682 nm line is excited indirectly.
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Submitted 14 May, 2016;
originally announced May 2016.
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Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy
Authors:
Jared H. Strait,
Haining Wang,
Shriram Shivaraman,
Virgil B. Shields,
Michael G. Spencer,
Farhan Rana
Abstract:
Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the differential probe transmission becomes slower, extending beyond several hundred picoseconds at temperatures below 50K. We interpret the observed relaxation trans…
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Using optical-pump terahertz-probe spectroscopy, we study the relaxation dynamics of photoexcited carriers in graphene at different temperatures. We find that at lower temperatures the tail of the relaxation transients as measured by the differential probe transmission becomes slower, extending beyond several hundred picoseconds at temperatures below 50K. We interpret the observed relaxation transients as resulting from the cooling of the photoexcited carriers via phonon emission. The slow cooling of the photoexcited carriers at low temperatures is attributed to the bulk of the electron and hole energy distributions moving close enough to the Dirac point such that both intraband and interband scattering of carriers via optical phonon emission becomes inefficient for removing heat from the carriers. Our model, which includes intraband carrier scattering and interband carrier recombination and generation, agrees very well with the experimental observations.
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Submitted 12 August, 2011;
originally announced August 2011.
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Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
Authors:
Haining Wang,
Jared H. Strait,
Paul A. George,
Shriram Shivaraman,
Virgil B. Shields,
Mvs Chandrashekhar,
Jeonghyun Hwang,
Carlos S. Ruiz-Vargas,
Farhan Rana,
Michael G. Spencer,
Jiwoong Park
Abstract:
Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons wh…
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Using ultrafast optical pump-probe spectroscopy, we study the relaxation dynamics of hot optical phonons in few-layer and multi-layer graphene films grown by epitaxy on silicon carbide substrates and by chemical vapor deposition on nickel substrates. In the first few hundred femtoseconds after photoexcitation, the hot carriers lose most of their energy to the generation of hot optical phonons which then present the main bottleneck to subsequent carrier cooling. Optical phonon cooling on short time scales is found to be independent of the graphene growth technique, the number of layers, and the type of the substrate. We find average phonon lifetimes in the 2.5-2.55 ps range. We model the relaxation dynamics of the coupled carrier-phonon system with rate equations and find a good agreement between the experimental data and the theory. The extracted optical phonon lifetimes agree very well with the theory based on anharmonic phonon interactions.
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Submitted 28 December, 2009; v1 submitted 26 September, 2009;
originally announced September 2009.
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Carrier Recombination and Generation Rates for Intravalley and Intervalley Phonon Scattering in Graphene
Authors:
Farhan Rana,
Paul A. George,
Jared H. Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Michael G. Spencer
Abstract:
Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes signifi…
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Electron-hole generation and recombination rates for intravalley and intervalley phonon scattering in Graphene are presented. The transverse and the longitudinal optical phonon modes ($E_{2g}$-modes) near the zone center ($Γ$-point) contribute to intravalley interband carrier scattering. At the zone edge ($K(K')$-point), only the transverse optical phonon mode ($A'_{1}$-mode) contributes significantly to intervalley interband scattering with recombination rates faster than those due to zone center phonons. The calculated recombination times range from less than a picosecond to more than hundreds of picoseconds and are strong functions of temperature and electron and hole densities. The theoretical calculations agree well with experimental measurements of the recombination rates of photoexcited carriers in graphene.
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Submitted 5 January, 2009; v1 submitted 2 January, 2009;
originally announced January 2009.
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Emission of Terahertz Radiation from SiC
Authors:
Jared H. Strait,
Paul A. George,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility…
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We report the emission of strong coherent broadband terahertz radiation from 6H-Silicon-Carbide (SiC) excited with optical pulses. The measured terahertz spectral signal-to-noise ratio is better than one thousand. We determine that the terahertz radiation is generated via second order optical nonlinearity (optical rectification). We present a measurement of the ratio of nonlinear susceptibility tensor elements $χ_{zzz}^{(2)}/χ_{zxx}^{(2)}$ and the complex index of refraction of silicon carbide at THz frequencies.
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Submitted 13 May, 2009; v1 submitted 4 September, 2008;
originally announced September 2008.
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Thickness Estimation of Epitaxial Graphene on SiC using Attenuation of Substrate Raman Intensity
Authors:
Shriram Shivaraman,
M. V. S. Chandrashekhar,
John J. Boeckl,
Michael G. Spencer
Abstract:
A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduce…
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A simple, non-invasive method using Raman spectroscopy for the estimation of the thickness of graphene layers grown epitaxially on silicon carbide (SiC) is presented, enabling simultaneous determination of thickness, grain size and disorder using the spectra. The attenuation of the substrate Raman signal due to the graphene overlayer is found to be dependent on the graphene film thickness deduced from X-ray photoelectron spectroscopy and transmission electron microscopy of the surfaces. We explain this dependence using an absorbing overlayer model. This method can be used for mapping graphene thickness over a region and is capable of estimating thickness of multilayer graphene films beyond that possible by XPS and Auger electron spectroscopy (AES).
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Submitted 31 March, 2009; v1 submitted 21 July, 2008;
originally announced July 2008.
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Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene
Authors:
Paul A. George,
Jared Strait,
Jahan Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics a…
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The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump Terahertz-probe spectroscopy. The conductivity in graphene at Terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics associated with carrier intraband relaxation and interband recombination. We report the electron-hole recombination times in epitaxial graphene for the first time. Our results show that carrier cooling occurs on sub-picosecond time scales and that interband recombination times are carrier density dependent.
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Submitted 22 July, 2008; v1 submitted 30 May, 2008;
originally announced May 2008.
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Measurement of the Optical Absorption Spectra of Epitaxial Graphene from Terahertz to Visible
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Jared Strait,
Paul George,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer,
Dmitry Veksler,
Yunqing Chen
Abstract:
We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoret…
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We present experimental results on the optical absorption spectra of epitaxial graphene from the visible to the terahertz (THz) frequency range. In the THz range, the absorption is dominated by intraband processes with a frequency dependence similar to the Drude model. In the near IR range, the absorption is due to interband processes and the measured optical conductivity is close to the theoretical value of $e^{2}/4\hbar$. We extract values for the carrier densities, the number of carbon atom layers, and the intraband scattering times from the measurements.
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Submitted 16 August, 2008; v1 submitted 22 January, 2008;
originally announced January 2008.
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Measurement of Ultrafast Carrier Dynamics in Epitaxial Graphene
Authors:
Jahan M. Dawlaty,
Shriram Shivaraman,
Mvs Chandrashekhar,
Farhan Rana,
Michael G. Spencer
Abstract:
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation…
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Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.
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Submitted 2 December, 2007;
originally announced December 2007.
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Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport
Authors:
Tim K. Hossain,
James V. Lindesay,
Michael G. Spencer
Abstract:
A major issue in the development of the technology of nitride based materials is the choice of substrate. The structural and optical properties of the layers are intimately connected to the substrate material used in the epitaxial growth. Key issues include lattice matching of substrate and epitaxial layer and the difference in the thermal expansion between the substrate and epitaxial layer. Due…
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A major issue in the development of the technology of nitride based materials is the choice of substrate. The structural and optical properties of the layers are intimately connected to the substrate material used in the epitaxial growth. Key issues include lattice matching of substrate and epitaxial layer and the difference in the thermal expansion between the substrate and epitaxial layer. Due to the extremely high vapor pressure of nitrogen over Gallium Nitride (GaN), pure GaN substrate are very difficult to produce and currently almost all nitride-based device are fabricated by hetero-epitaxy on either Sapphire or Silicon Carbide (SiC). Alternatively, AlN has a significantly lower vapor pressure of nitrogen and can be grown in bulk form. In this paper we report on our results in the growth of AlN by physical vapor transport. A theoretical model was developed to investigate the growth process by to determine optimal growth parameters. Several different seed crystals were investigated, singular 6H-SiC, 3.50 off-axis 6H-SiC and 80 off-axis 4H-SiC, and AlN grown by hydride vapor deposition on silicon substrates (the silicon substrates were subsequently removed by etching). Auger electron microscopy, transmission electron microscopy, and various X-ray diffraction techniques were used to investigate the samples grown.
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Submitted 13 April, 2002;
originally announced April 2002.
