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Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
Authors:
Alexander M. Jakob,
Simon G. Robson,
Hannes R. Firgau,
Vincent Mourik,
Vivien Schmitt,
Danielle Holmes,
Matthias Posselt,
Edwin L. H. Mayes,
Daniel Spemann,
Andrea Morello,
David N. Jamieson
Abstract:
Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufac…
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Semiconductor spin qubits combine excellent quantum performance with the prospect of manufacturing quantum devices using industry-standard metal-oxide-semiconductor (MOS) processes. This applies also to ion-implanted donor spins, which further afford exceptional coherence times and large Hilbert space dimension in their nuclear spin. Here we demonstrate and integrate multiple strategies to manufacture scale-up donor-based quantum computers. We use $^{31}$PF$_{2}$ molecule implants to triple the placement certainty compared to $^{31}$P ions, while attaining 99.99$\,$% confidence in detecting the implant. Similar confidence is retained by implanting heavier atoms such as $^{123}$Sb and $^{209}$Bi, which represent high-dimensional qudits for quantum information processing, while Sb$_2$ molecules enable deterministic formation of closely-spaced qudits. We demonstrate the deterministic formation of regular arrays of donor atoms with 300$\,$nm spacing, using step-and-repeat implantation through a nano aperture. These methods cover the full gamut of technological requirements for the construction of donor-based quantum computers in silicon.
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Submitted 18 September, 2023;
originally announced September 2023.
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Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond
Authors:
Nicholas F. L. Collins,
Alexander M. Jakob,
Simon G. Robson,
Shao Qi Lim,
Paul Räcke,
Brett C. Johnson,
Boqing Liu,
Yuerui Lu,
Daniel Spemann,
Jeffrey C. McCallum,
David N. Jamieson
Abstract:
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding appl…
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Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate deterministic single ion implantation for ions stopping between 30 and 130~nm deep from a typical stochastic ion source. An implantation event is signalled by a charge pulse induced by the drift of electron-hole pairs from the ion implantation. The ion implantation site is localised with an AFM nanostencil or a focused ion beam. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device.
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Submitted 14 June, 2023; v1 submitted 12 June, 2023;
originally announced June 2023.
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Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
Authors:
Simon G. Robson,
Paul Räcke,
Alexander M. Jakob,
Nicholas Collins,
Hannes R. Firgau,
Vivien Schmitt,
Vincent Mourik,
Andrea Morello,
Edwin Mayes,
Daniel Spemann,
David N. Jamieson
Abstract:
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore t…
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The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step forward requires a deterministic fabrication method to create large-scale arrays of donors, featuring few hundred nanometre inter-donor spacing. Here, we explore the feasibility of this approach by implanting low-energy ions into silicon devices featuring an enlarged 60x60 $μ$m sensitive area and an ultra-thin 3.2 nm gate oxide - capable of hosting large-scale donor arrays. By combining a focused ion beam system incorporating an electron-beam-ion-source with in-vacuum ultra-low noise ion detection electronics, we first demonstrate a versatile method to spatially map the device response characteristics to shallowly implanted 12 keV $^1$H$_2^+$ ions. Despite the weak internal electric field, near-unity charge collection efficiency is obtained from the entire sensitive area. This can be explained by the critical role that the high-quality thermal gate oxide plays in the ion detection response, allowing an initial rapid diffusion of ion induced charge away from the implant site. Next, we adapt our approach to perform deterministic implantation of a few thousand 24 keV $^{40}$Ar$^{2+}$ ions into a predefined micro-volume, without any additional collimation. Despite the reduced ionisation from the heavier ion species, a fluence-independent detection confidence of $\geq$99.99% was obtained. Our system thus represents not only a new method for mapping the near-surface electrical landscape of electronic devices, but also an attractive framework towards mask-free prototyping of large-scale donor arrays in silicon.
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Submitted 31 May, 2022; v1 submitted 27 January, 2022;
originally announced January 2022.
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Toward a systematic discovery of artificial functional magnetic materials
Authors:
Lukas Botsch,
Carsten Bundesmann,
Daniel Spemann,
Pablo D. Esquinazi
Abstract:
Although ferromagnets are found in all kinds of technological applications, only few substances are known to be intrinsically ferromagnetic at room temperature. In the past twenty years, a plethora of new artificial ferromagnetic materials have been found by introducing defects into non-magnetic host materials. In contrast to the intrinsic ferromagnetic materials, they offer an outstanding degree…
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Although ferromagnets are found in all kinds of technological applications, only few substances are known to be intrinsically ferromagnetic at room temperature. In the past twenty years, a plethora of new artificial ferromagnetic materials have been found by introducing defects into non-magnetic host materials. In contrast to the intrinsic ferromagnetic materials, they offer an outstanding degree of material engineering freedom, provided one finds a type of defect to functionalize every possible host material to add magnetism to its intrinsic properties. Still, one controversial question remains: Are these materials really technologically relevant ferromagnets? To answer this question, in this work the emergence of a ferromagnetic phase upon ion irradiation is systematically investigated both theoretically and experimentally. Quantitative predictions are validated against experimental data from the literature of SiC hosts irradiated with high energy Ne ions and own experiments on low energy Ar ion irradiation of TiO$_2$ hosts. In the high energy regime, a bulk magnetic phase emerges, which is limited by host lattice amorphization, whereas at low ion energies an ultrathin magnetic layer forms at the surface and evolves into full magnetic percolation. Lowering the ion energy, the magnetic layer thickness reduces down to a bilayer, where a perpendicular magnetic anisotropy appears due to magnetic surface states.
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Submitted 28 May, 2021; v1 submitted 14 March, 2021;
originally announced March 2021.
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Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
Authors:
Alexander M. Jakob,
Simon G. Robson,
Vivien Schmitt,
Vincent Mourik,
Matthias Posselt,
Daniel Spemann,
Brett C. Johnson,
Hannes R. Firgau,
Edwin Mayes,
Jeffrey C. McCallum,
Andrea Morello,
David N. Jamieson
Abstract:
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices requi…
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The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.
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Submitted 9 September, 2020; v1 submitted 7 September, 2020;
originally announced September 2020.
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Identification of a possible superconducting transition above room temperature in natural graphite crystals
Authors:
Christian E. Precker,
Pablo D. Esquinazi,
Ana Champi,
José Barzola-Quiquia,
Mahsa Zoraghi,
Santiago Muiños-Landin,
Annette Setzer,
Winfried Böhlmann,
Daniel Spemann,
Jan Meijer,
Tom Muenster,
Oliver Baehre,
Gert Kloess,
Henning Beth
Abstract:
Measuring with high precision the electrical resistance of highly ordered natural graphite samples from a Brazil mine, we have identified a transition at $\sim$350~K with $\sim$40~K transition width. The step-like change in temperature of the resistance, its magnetic irreversibility and time dependence after a field change, consistent with trapped flux and flux creep, and the partial magnetic flux…
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Measuring with high precision the electrical resistance of highly ordered natural graphite samples from a Brazil mine, we have identified a transition at $\sim$350~K with $\sim$40~K transition width. The step-like change in temperature of the resistance, its magnetic irreversibility and time dependence after a field change, consistent with trapped flux and flux creep, and the partial magnetic flux expulsion obtained by magnetization measurements, suggest the existence of granular superconductivity below 350~K. The zero-field virgin state can only be reached again after zero field cooling the sample from above the transition. Paradoxically, the extraordinarily high transition temperature we found for this and several other graphite samples is the reason why this transition remained undetected so far. The existence of well ordered rhombohedral graphite phase in all measured samples has been proved by x-rays diffraction measurements, suggesting its interfaces with the Bernal phase as a possible origin for the high-temperature superconductivity, as theoretical studies predicted. The localization of granular superconductivity at these two dimensional interfaces prevents the observation of a zero resistance state or of a full Meissner state.
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Submitted 30 June, 2016;
originally announced June 2016.
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Study of the Negative Magneto-Resistance of Single Proton-Implanted Lithium-Doped ZnO Microwires
Authors:
I. Lorite,
C. Zandalazini,
P. Esquinazi,
D. Spemann,
S. Friedländer,
A. Pöppl,
T. Michalsky,
M. Grundmann,
J. Vogt,
J. Meijer,
S. P. Heluani,
H. Ohldag,
W. A. Adeagbo,
S. K. Nayak,
W. Hergert,
A. Ernst,
M. Hoffmann
Abstract:
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below…
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The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO microwires showed a non monotonous behavior of the negative magneto-resistance (MR) at temperature above 150 K. This is in contrast to the monotonous NMR observed below 50 K for proton-implanted ZnO. The observed difference in the transport properties of the wires is related to the amount of stable Zn vacancies created at the near surface region by the proton implantation and Li doping. The magnetic field dependence of the resistance might be explained by the formation of a magnetic/non magnetic heterostructure in the wire after proton implantation.
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Submitted 30 April, 2015;
originally announced April 2015.
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Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes
Authors:
J. Barzola-Quiquia,
P. Esquinazi,
M. Lindel,
D. Spemann,
M. Muallem,
G. D. Nessim
Abstract:
The magnetotransport properties were studied in hundreds of micrometer length double-wall carbon nanotubes (DWCNT) bundles. Above 15 K the resistance shows an ohmic behavior and its temperature dependence is well described using the variable-range hopping for one-dimensional system. The magnetoresistance is negative and can be explained using an empirical model based on spin-scattering processes i…
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The magnetotransport properties were studied in hundreds of micrometer length double-wall carbon nanotubes (DWCNT) bundles. Above 15 K the resistance shows an ohmic behavior and its temperature dependence is well described using the variable-range hopping for one-dimensional system. The magnetoresistance is negative and can be explained using an empirical model based on spin-scattering processes indicating the existence of magnetic order up to room temperature. At temperatures between 2 K and 15 K the resistance is non-ohmic and the current-voltage characteristics reveal the appearance of a potential, which can be well described by a fluctuation-induced tunneling conduction model. In this low temperature range and at low enough input current, a positive magnetoresistance appears - in addition to the negative one - with an extraordinary hysteresis in field and vanishes at $T \sim 15 $K, suggesting the existence of a superconducting state. Magnetization results partially support the existence of both phenomena in the DWCNT bundles.
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Submitted 2 March, 2015;
originally announced March 2015.
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Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example
Authors:
J. Barzola-Quiquia,
T. Lehmann,
M. Stiller,
D. Spemann,
P. Esquinazi,
P. Häussler
Abstract:
We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the r…
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We present a new method to obtain topological insulator Bi$_2$Se$_3$ thin films with a centimeter large lateral length. To produce amorphous Bi$_2$Se$_3$ thin films we have used a sequential flash-evaporation method at room temperature. Transmission electron microscopy has been used to verify that the prepared samples are in a pure amorphous state. During annealing the samples transform into the rhombohedral Bi$_2$Se$_3$ crystalline strcuture which was confirmed using X-ray diffraction and Raman spectroscopy. Resistance measurements of the amorphous films show the expected Mott variable range hopping conduction process with a high specific resistance compared to the one obtained in the crystalline phase (metallic behavior). We have measured the magnetoresistance (MR) and the Hall effect (HE) at different temperatures between 2 K and 275 K. At temperatures $T \lesssim 50$ K and fields $B \lesssim 1$ T we observe weak anti-localization in the MR; the Hall measurements confirm the n-type character of the samples. All experimental results of our films are in quantitative agreement with results from samples prepared using more sophisticated methods.
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Submitted 4 February, 2015;
originally announced February 2015.
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Trace element content and magnetic properties of commercial HOPG samples studied by ion beam microscopy and SQUID magnetometry
Authors:
D. Spemann,
P. Esquinazi,
A. Setzer,
W. Böhlmann
Abstract:
In this study, the impurity concentration and magnetic response of nine highly oriented pyrolytic graphite (HOPG) samples with different grades and from different providers were determined using ion beam microscopy and SQUID magnetometry. Apart from sideface contaminations in the as-received state, bulk contamination of the samples in most cases consists of disk-shaped micron-sized particles made…
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In this study, the impurity concentration and magnetic response of nine highly oriented pyrolytic graphite (HOPG) samples with different grades and from different providers were determined using ion beam microscopy and SQUID magnetometry. Apart from sideface contaminations in the as-received state, bulk contamination of the samples in most cases consists of disk-shaped micron-sized particles made of Ti and V with an additional Fe contamination around the grain perimeter. The saturation magnetization typically increases with Fe concentration, however, there is no simple correlation between Fe content and magnetic moment. The saturation magnetization of one, respectively six, out of nine samples clearly exceeds the maximum contribution from pure Fe or Fe3C. For most samples the temperature dependence of the remanence decreases linearly with T - a dependence found previously for defect-induced magnetism (DIM) in HOPG. We conclude that apart from magnetic impurities, additional contribution to the ferromagnetic magnetization exists in pristine HOPG in agreement with previous studies. A comparative study between the results of ion beam microscopy and the commonly used EDX analysis shows clearly that EDX is not a reliable method for quantitative trace elemental analysis in graphite, clarifying weaknesses and discrepancies in the element concentrations given in the recent literature.
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Submitted 19 June, 2014; v1 submitted 11 October, 2013;
originally announced October 2013.
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Defect-Induced Magnetism in Solids
Authors:
P. Esquinazi,
W. Hergert,
D. Spemann,
A. Setzer,
A. Ernst
Abstract:
In the last years the number of nominally non-magnetic solids showing magnetic order induced by some kind of defects has increased continuously. From the single element material graphite to several covalently bonded non-magnetic compounds, the influence of defects like vacancies and/or non-magnetic ad-atoms on triggering magnetic order has attracted the interest of experimentalists and theoreticia…
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In the last years the number of nominally non-magnetic solids showing magnetic order induced by some kind of defects has increased continuously. From the single element material graphite to several covalently bonded non-magnetic compounds, the influence of defects like vacancies and/or non-magnetic ad-atoms on triggering magnetic order has attracted the interest of experimentalists and theoreticians. We review and discuss the main theoretical approach as well as recently obtained experimental evidence based on different experimental methods that supports the existence of defect-induced magnetism (DIM) in non-magnetic as well as in magnetic materials.
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Submitted 30 March, 2013;
originally announced April 2013.
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Comment on: "Revealing common artifacts due to ferromagnetic inclusions in highly oriented pyrolytic graphite", by M. Sepioni, R.R. Nair, I.-Ling Tsai, A.K. Geim and I.V. Grigorieva, EPL 97 (2012) 47001
Authors:
D. Spemann,
M. Rothermel,
P. Esquinazi,
M. Ramos,
Y. Kopelevich,
H. Ohldag
Abstract:
This comment addresses several issues in the paper by Sepioni et al., where it is stated that the ferromagnetism in pristine highly oriented pyrolytic graphite (HOPG) reported by several groups in the previous years is most likely due to impurity contamination. In this comment, clear arguments are given why this statement is not justified. Furthermore, it is pointed out, that there are already mea…
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This comment addresses several issues in the paper by Sepioni et al., where it is stated that the ferromagnetism in pristine highly oriented pyrolytic graphite (HOPG) reported by several groups in the previous years is most likely due to impurity contamination. In this comment, clear arguments are given why this statement is not justified. Furthermore, it is pointed out, that there are already measurements using element-sensitive microscopic techniques, e.g. X-ray Magnetic Circular Dichroism (XMCD) that directly proved the intrinsic origin of the ferromagnetism in graphite, also in pristine HOPG.
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Submitted 13 April, 2012;
originally announced April 2012.
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Hydrogen mediated ferromagnetism in ZnO single crystals
Authors:
M. Khalid,
P. Esquinazi,
D. Spemann,
W. Anwand,
G. Brauer
Abstract:
We investigated the magnetic properties of hydrogen plasma treated ZnO single crystals by SQUID magnetometry. In agreement with the expected hydrogen penetration depth we found ferromagnetic behavior located at the first 20 nm of the H-treated surface of ZnO with magnetization at saturation up to 6 emu/g at 300 K and Curie temperature T$_c$ $\gtrsim $ 400 K. In the ferromagnetic samples a hydrogen…
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We investigated the magnetic properties of hydrogen plasma treated ZnO single crystals by SQUID magnetometry. In agreement with the expected hydrogen penetration depth we found ferromagnetic behavior located at the first 20 nm of the H-treated surface of ZnO with magnetization at saturation up to 6 emu/g at 300 K and Curie temperature T$_c$ $\gtrsim $ 400 K. In the ferromagnetic samples a hydrogen concentration of a few atomic percent in the first 20 nm surface layer was determined by nuclear reaction analysis. The saturation magnetization of H-treated ZnO increases with the concentration of hydrogen.
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Submitted 11 April, 2011;
originally announced April 2011.
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The role of hydrogen in room-temperature ferromagnetism at graphite surfaces
Authors:
H. Ohldag,
P. Esquinazi,
E. Arenholz,
D. Spemann,
M. Rothermel,
A. Setzer,
T. Butz
Abstract:
We present a x-ray dichroism study of graphite surfaces that addresses the origin and magnitude of ferromagnetism in metal-free carbon. We find that, in addition to carbon $π$ states, also hydrogen-mediated electronic states exhibit a net spin polarization with significant magnetic remanence at room temperature. The observed magnetism is restricted to the top $\approx$10 nm of the irradiated samp…
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We present a x-ray dichroism study of graphite surfaces that addresses the origin and magnitude of ferromagnetism in metal-free carbon. We find that, in addition to carbon $π$ states, also hydrogen-mediated electronic states exhibit a net spin polarization with significant magnetic remanence at room temperature. The observed magnetism is restricted to the top $\approx$10 nm of the irradiated sample where the actual magnetization reaches $ \simeq 15$ emu/g at room temperature. We prove that the ferromagnetism found in metal-free untreated graphite is intrinsic and has a similar origin as the one found in proton bombarded graphite.
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Submitted 17 May, 2010; v1 submitted 26 May, 2009;
originally announced May 2009.
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Magnetic order in Graphite: Experimental evidence, intrinsic and extrinsic difficulties
Authors:
P. Esquinazi,
J. Barzola-Quiquia,
D. Spemann,
M. Rothermel,
H. Ohldag,
N. García,
A. Setzer,
T. Butz
Abstract:
We discuss recently obtained data using different experimental methods including magnetoresistance measurements that indicate the existence of metal-free high-temperature magnetic order in graphite. Intrinsic as well as extrinsic difficulties to trigger magnetic order by irradiation of graphite are discussed in view of recently published theoretical work.
We discuss recently obtained data using different experimental methods including magnetoresistance measurements that indicate the existence of metal-free high-temperature magnetic order in graphite. Intrinsic as well as extrinsic difficulties to trigger magnetic order by irradiation of graphite are discussed in view of recently published theoretical work.
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Submitted 10 February, 2009;
originally announced February 2009.
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Experimental Evidence for Two-Dimensional Magnetic Order in Proton Bombarded Graphite
Authors:
J. Barzola-Quiquia,
P. Esquinazi,
M. Rothermel,
D. Spemann,
T. Butz,
N. García
Abstract:
We have prepared magnetic graphite samples bombarded by protons at low temperatures and low fluences to attenuate the large thermal annealing produced during irradiation. An overall optimization of sample handling allowed us to find Curie temperatures $ T_c \gtrsim 350$ K at the used fluences. The magnetization versus temperature shows unequivocally a linear dependence, which can be interpreted…
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We have prepared magnetic graphite samples bombarded by protons at low temperatures and low fluences to attenuate the large thermal annealing produced during irradiation. An overall optimization of sample handling allowed us to find Curie temperatures $ T_c \gtrsim 350$ K at the used fluences. The magnetization versus temperature shows unequivocally a linear dependence, which can be interpreted as due to excitations of spin waves in a two dimensional Heisenberg model with a weak uniaxial anisotropy.
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Submitted 16 June, 2007;
originally announced June 2007.
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Proton-induced magnetic order in carbon: SQUID measurements
Authors:
J. Barzola-Quiquia,
S. Petriconi,
P. Esquinazi,
M. Rothermel,
D. Spemann,
A. Setzer,
T. Butz
Abstract:
In this work we have studied systematically the changes in the magnetic behavior of highly oriented pyrolytic graphite (HOPG) samples after proton irradiation in the MeV energy range. Superconducting quantum interferometer device (SQUID) results obtained from samples with thousands of localized spots of micrometer size as well on samples irradiated with a broad beam confirm previously reported r…
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In this work we have studied systematically the changes in the magnetic behavior of highly oriented pyrolytic graphite (HOPG) samples after proton irradiation in the MeV energy range. Superconducting quantum interferometer device (SQUID) results obtained from samples with thousands of localized spots of micrometer size as well on samples irradiated with a broad beam confirm previously reported results. Both, the para- and ferromagnetic contributions depend strongly on the irradiation details. The results indicate that the magnetic moment at saturation of spots of micrometer size is of the order of $10^{-10}$ emu.
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Submitted 11 October, 2006;
originally announced October 2006.
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$π$-Electron Ferromagnetism in Metal Free Carbon Probed by Soft X-Ray Dichroism
Authors:
H. Ohldag,
T. Tyliszczak,
R. Hoehne,
D. Spemann,
P. Esquinazi,
M. Ungureanu,
T. Butz
Abstract:
Elemental carbon represents a fundamental building block of matter and the possibility of ferromagnetic order in carbon attracted widespread attention. However, the origin of magnetic order in such a light element is only poorly understood and has puzzled researchers. We present a spectromicroscopy study at room temperature of proton irradiated metal free carbon using the elemental and chemical…
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Elemental carbon represents a fundamental building block of matter and the possibility of ferromagnetic order in carbon attracted widespread attention. However, the origin of magnetic order in such a light element is only poorly understood and has puzzled researchers. We present a spectromicroscopy study at room temperature of proton irradiated metal free carbon using the elemental and chemical specificity of x-ray magnetic circular dichroism (XMCD). We demonstrate that the magnetic order in the investigated system originates only from the carbon $π$-electron system.
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Submitted 2 April, 2007; v1 submitted 19 September, 2006;
originally announced September 2006.
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3D-Hydrogen Analysis of Ferromagnetic Microstructures in Proton Irradiated Graphite
Authors:
P. Reichart,
D. Spemann,
A. Hauptner,
A. Bergmaier,
V. Hable,
R. Hertenberger,
C. Greubel,
A. Setzer,
G. Dollinger,
D. N. Jamieson,
T. Butz,
P. Esquinazi
Abstract:
Recently, magnetic order in highly oriented pyrolytic graphite (HOPG) induced by proton broad- and microbeam irradiation was discovered. Theoretical models propose that hydrogen could play a major role in the magnetism mechanism. We analysed the hydrogen distribution of pristine as well as irradiated HOPG samples, which were implanted to micrometer-sized spots as well as extended areas with vari…
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Recently, magnetic order in highly oriented pyrolytic graphite (HOPG) induced by proton broad- and microbeam irradiation was discovered. Theoretical models propose that hydrogen could play a major role in the magnetism mechanism. We analysed the hydrogen distribution of pristine as well as irradiated HOPG samples, which were implanted to micrometer-sized spots as well as extended areas with various doses of 2.25 MeV protons at the Leipzig microprobe LIPSION. For this we used the sensitive 3D hydrogen microscopy system at the Munich microprobe SNAKE. The background hydrogen level in pristine HOPG is determined to be less than 0.3 at-ppm. About 4.8e15 H-atoms/cm^2 are observed in the near-surface region (4 um depth resolution). The depth profiles of the implants show hydrogen located within a confined peak at the end of range, in agreement with SRIM Monte Carlo simulations, and no evidence of diffusion broadening along the c-axis. At sample with microspots, up to 40 at-% of the implanted hydrogen is not detected, providing support for lateral hydrogen diffusion.
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Submitted 12 December, 2005;
originally announced December 2005.
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Magnetic properties of carbon phases synthesized using high pressure-high temperature treatment
Authors:
K. -H. Han,
A. Talyzin,
A. Dzwilewski,
T. L. Makarova,
R. Hohne,
P. Esquinazi,
D. Spemann,
L. S. Dubrovinsky
Abstract:
Two sets of samples were synthesized at 3.5 GPa near the point of C60 cage collapse at different annealing times. A clear structural transformation from mixture of C60 polymeric phases to graphite-like hard carbon phase was confirmed by X-ray diffraction and Raman spectroscopy. Magnetic force microscopy and superconducting quantum interference device were used to characterize the magnetic proper…
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Two sets of samples were synthesized at 3.5 GPa near the point of C60 cage collapse at different annealing times. A clear structural transformation from mixture of C60 polymeric phases to graphite-like hard carbon phase was confirmed by X-ray diffraction and Raman spectroscopy. Magnetic force microscopy and superconducting quantum interference device were used to characterize the magnetic properties of the synthesized samples. We found that the sample preparation conditions used in this study are not suitable to produce bulk magnetic carbon.
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Submitted 1 November, 2005;
originally announced November 2005.
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Induced Magnetic Order by Ion Irradiation of Carbon-Based Structures
Authors:
P. Esquinazi,
R. Höhne,
K. -H. Han,
D. Spemann,
A. Setzer,
M. Diaconu,
H. Schmidt,
T. Butz
Abstract:
In this chapter we review the magnetic effects produced by proton irradiation on graphite, disordered carbon and fullerene films. The advantage of proton irradiation is twofold: it enables us to make an impurity analysis simultaneously to the implantation of hydrogen. In this chapter we will review the main effects obtained after proton irradiation in different carbon-based structures. This chap…
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In this chapter we review the magnetic effects produced by proton irradiation on graphite, disordered carbon and fullerene films. The advantage of proton irradiation is twofold: it enables us to make an impurity analysis simultaneously to the implantation of hydrogen. In this chapter we will review the main effects obtained after proton irradiation in different carbon-based structures. This chapter is organized as follows. In section 2 we provide the main characteristics of our irradiation facility. In this section we show an example of element analysis obtained in one of the graphite samples used for the irradiation studies. The irradiation effects are reviewed in section 3. This section is divided in two main subsections that describe the effects in oriented graphite and carbon-based thin films. In section 4 we discuss some of the effects observed after annealing the sample at high temperatures in vacuum or after leaving it at room temperature for a long period of time.
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Submitted 20 September, 2005;
originally announced September 2005.
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Induced Magnetic Ordering by Proton Irradiation in Graphite
Authors:
P. Esquinazi,
D. Spemann,
R. Höhne,
A. Setzer,
K. -H. Han,
T. Butz
Abstract:
We provide evidence that proton irradiation of energy 2.25 MeV on highly-oriented pyrolytic graphite samples triggers ferro- or ferrimagnetism. Measurements performed with a superconducting quantum interferometer device (SQUID) and magnetic force microscopy (MFM) reveal that the magnetic ordering is stable at room temperature.
We provide evidence that proton irradiation of energy 2.25 MeV on highly-oriented pyrolytic graphite samples triggers ferro- or ferrimagnetism. Measurements performed with a superconducting quantum interferometer device (SQUID) and magnetic force microscopy (MFM) reveal that the magnetic ordering is stable at room temperature.
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Submitted 5 September, 2003;
originally announced September 2003.
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Ferromagnetism in Oriented Graphite Samples
Authors:
P. Esquinazi,
A. Setzer,
R. Hoehne,
C. Semmelhack,
Y. Kopelevich,
D. Spemann,
T. Butz,
B. Kohlstrunk,
M. Loesche
Abstract:
We have studied the magnetization of various, well characterized samples of highly oriented pyrolitic graphite (HOPG), Kish graphite and natural graphite to investigate the recently reported ferromagnetic-like signal and its possible relation to ferromagnetic impurities. The magnetization results obtained for HOPG samples for applied fields parallel to the graphene layers - to minimize the diama…
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We have studied the magnetization of various, well characterized samples of highly oriented pyrolitic graphite (HOPG), Kish graphite and natural graphite to investigate the recently reported ferromagnetic-like signal and its possible relation to ferromagnetic impurities. The magnetization results obtained for HOPG samples for applied fields parallel to the graphene layers - to minimize the diamagnetic background - show no correlation with the magnetic impurity concentration. Our overall results suggest an intrinsic origin for the ferromagnetism found in graphite. We discuss possible origins of the ferromagnetic signal.
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Submitted 7 March, 2002;
originally announced March 2002.
