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Ultrafast electronic line width broadening in the C 1s core level of graphene
Authors:
Davide Curcio,
Sahar Pakdel,
Klara Volckaert,
Jill A. Miwa,
Søren Ulstrup,
Nicola Lanatà,
Marco Bianchi,
Dmytro Kutnyakhov,
Federico Pressacco,
Günter Brenner,
Siarhei Dziarzhytski,
Harald Redlin,
Steinn Agustsson,
Katerina Medjanik,
Dmitry Vasilyev,
Hans-Joachim Elmers,
Gerd Schönhense,
Christian Tusche,
Ying-Jiun Chen,
Florian Speck,
Thomas Seyller,
Kevin Bühlmann,
Rafael Gort,
Florian Diekmann,
Kai Rossnagel
, et al. (9 additional authors not shown)
Abstract:
Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the…
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Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the detailed energy distribution of the photoelectrons. Ultrafast pump-probe techniques add a new dimension to such studies, introducing the ability to probe a transient state of the many-body system. Here we use a free electron laser to investigate the effect of a transiently excited electron gas on the core level spectrum of graphene, showing that it leads to a large broadening of the C 1s peak. Confirming a decade-old prediction, the broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron system, rather than by vibrational excitations. This interpretation is supported by a line shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in agreement with electronic temperature values obtained from valence band data. Furthermore, making use of time- and momentum-resolved C 1s spectra, we illustrate how the momentum change of the outgoing core electrons leads to a small but detectable change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the narrow $σ$-band in the C 1s state. The results demonstrate that the XPS line shape can be used as an element-specific and local probe of the excited electron system and that X-ray photoelectron diffraction investigations remain feasible at very high electronic temperatures.
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Submitted 21 May, 2021;
originally announced May 2021.
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Silicon carbide stacking-order-induced doping variation in epitaxial graphene
Authors:
Davood Momeni Pakdehi,
Philip Schädlich,
T. T. Nhung Nguyen,
Alexei A. Zakharov,
Stefan Wundrack,
Florian Speck,
Klaus Pierz,
Thomas Seyller,
Christoph Tegenkamp,
Hans. W. Schumacher
Abstract:
Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identi…
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Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization doping induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identical SiC terraces, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. We attribute this correlation to a proximity effect of the SiC termination-dependent polarization doping on the overlying graphene layer. Our findings open a new approach for a nano-scale doping-engineering by self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates.
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Submitted 30 May, 2020;
originally announced June 2020.
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Substrate induced nanoscale resistance variation in epitaxial graphene
Authors:
Anna Sinterhauf,
Georg Alexander Traeger,
Davood Momeni Pakdehi,
Philip Schädlich,
Philip Willke,
Florian Speck,
Thomas Seyller,
Christoph Tegenkamp,
Klaus Pierz,
Hans Werner Schumacher,
Martin Wenderoth
Abstract:
Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively invest…
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Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively investigate the local transport properties of graphene prepared by polymer assisted sublimation growth (PASG) using scanning tunneling potentiometry. PASG graphene is characterized by a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H-SiC substrate as well as with the distance between the graphene sheet and the substrate. Our results experimentally quantify the strong impact of the graphene-substrate interaction on the local transport properties of graphene.
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Submitted 28 January, 2020; v1 submitted 8 August, 2019;
originally announced August 2019.
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Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC
Authors:
Jianing Chen,
Maxim L. Nesterov,
Alexey Yu. Nikitin,
Sukosin Thongrattanasiri,
Pablo Alonso-González,
Tetiana M. Slipchenko,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Iris Crassee,
Frank H. L Koppens,
Luis Martin-Moreno,
F. Javier García de Abajo,
Alexey B. Kuzmenko,
Rainer Hillenbrand
Abstract:
We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders…
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We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations, and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultra-narrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene.
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Submitted 25 November, 2013;
originally announced November 2013.
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Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Authors:
Andrew L. Walter,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Keun Su Kim,
Young Jun Chang,
Luca Moreschini,
Davide Innocenti,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulat…
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Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.
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Submitted 21 September, 2012;
originally announced September 2012.
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Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Authors:
Daniel Waldmann,
Johannes Jobst,
Felix Fromm,
Florian Speck,
Thomas Seyller,
Michael Krieger,
Heiko B. Weber
Abstract:
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard…
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We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.
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Submitted 27 September, 2011;
originally announced September 2011.
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Effective screening and the plasmaron bands in Graphene
Authors:
Andrew L. Walter,
Aaron Bostwick,
Ki-Joon Jeon,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Young Jun Chang,
Marco Polini,
Reza Asgari,
Allan H. MacDonald,
Karsten Horn,
Eli Rotenberg
Abstract:
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua…
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Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.
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Submitted 21 July, 2011;
originally announced July 2011.
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High-Transconductance Graphene Solution-Gated Field Effect Transistors
Authors:
Lucas H. Hess,
Moritz V. Hauf,
Max Seifert,
Florian Speck,
Thomas Seyller,
Martin Stutzmann,
Ian D. Sharp,
Jose A. Garrido
Abstract:
In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance…
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In this work, we report on the electronic properties of solution-gated field effect transistors (SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu exhibit high transconductances, which are a consequence of the high mobility of charge carriers in graphene and the large capacitance at the graphene/water interface. The performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET technologies and found to be clearly superior, confirming the potential of graphene SGFETs for sensing applications in electrolytic environments.
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Submitted 31 May, 2011;
originally announced May 2011.
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Highly p-doped graphene obtained by fluorine intercalation
Authors:
Andrew L. Walter,
Ki-Joon Jeon,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Yong Su Kim,
Young Jun Chang,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l…
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .
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Submitted 14 April, 2011;
originally announced April 2011.
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The quasi-free-standing nature of graphene on H-saturated SiC(0001)
Authors:
F. Speck,
J. Jobst,
F. Fromm,
M. Ostler,
D. Waldmann,
M. Hundhausen,
H. B. Weber,
Th. Seyller
Abstract:
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The laye…
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We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".
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Submitted 5 September, 2011; v1 submitted 21 March, 2011;
originally announced March 2011.
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Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions
Authors:
S. Weingart,
C. Bock,
U. Kunze,
F. Speck,
Th. Seyller,
L. Ley
Abstract:
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.
We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.
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Submitted 21 October, 2009;
originally announced October 2009.
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How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
Authors:
Johannes Jobst,
Daniel Waldmann,
Florian Speck,
Roland Hirner,
Duncan K. Maude,
Thomas Seyller,
Heiko B. Weber
Abstract:
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mo…
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We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.
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Submitted 13 August, 2009;
originally announced August 2009.
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Electronic structure of graphite/6H-SiC interfaces
Authors:
Th. Seyller,
K. V. Emtsev,
F. Speck,
K. -Y. Gao,
L. Ley
Abstract:
We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is…
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We have studied the electronic structure of the interface between 6H-SiC{0001} and graphite. On n-type and p-type 6H-SiC(0001) we observe Schottky barriers of Phi_b,n^Si= 0.3+-0.1eV and Phi_b,p^Si=2.7+-0.1eV, respectively. The observed barrier is face specific: on n-type 6H-SiC(000-1) we find Phi_b,n^C=1.3+-0.1eV. The impact of these barriers on the electrical properties of metal/SiC contacts is discussed.
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Submitted 9 October, 2006;
originally announced October 2006.
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Initial stages of the graphite-SiC(0001) interface formation studied by photoelectron spectroscopy
Authors:
K. V. Emtsev,
Th. Seyller,
F. Speck,
L. Ley,
P. Stojanov,
J. D. Riley,
R. G. C. Leckey
Abstract:
Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization - the 6root3 reconstructed surface - we observe sigma-bands characteristic of graphitic sp2-bonded carbon. The pi-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this laye…
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Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization - the 6root3 reconstructed surface - we observe sigma-bands characteristic of graphitic sp2-bonded carbon. The pi-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6root3 surface at TA=1250-1300 degree C has an unperturbed electronic structure. The annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6root3 reconstructed layer.
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Submitted 15 September, 2006;
originally announced September 2006.
