Showing 1–36 of 36 results for author: Spataru, C

Enhancement of hydrogen absorption and hypervalent metal hydride formation in lanthanum using cryogenic ball milling

Authors: Sakun Duwal, Vitalie Stavila, Catalin Spataru, Mohana Shivanna, Portia Allen, Timothy Elmslie, Christopher T. Seagle, Jason Jeffries, Nenad Velisavljevic, Jesse Smith, Paul Chow, Yuming Xiao, Maddury Somayazulu, Peter A. Sharma

Abstract: Rare earth superhydrides exhibit high temperature superconductivity but are difficult to characterize and use in applications due to their high formation and stability pressures, which are typically in excess of 100 GPa. We studied how modification of the rare earth precursor improves hydrogen reactivity and hydrogen uptake for forming such metal hydrides at lower pressures. An elemental lanthanum… ▽ More Rare earth superhydrides exhibit high temperature superconductivity but are difficult to characterize and use in applications due to their high formation and stability pressures, which are typically in excess of 100 GPa. We studied how modification of the rare earth precursor improves hydrogen reactivity and hydrogen uptake for forming such metal hydrides at lower pressures. An elemental lanthanum precursor was milled at liquid nitrogen temperatures for different time intervals. After exposure to gaseous hydrogen at 380 C and 100 bar, we found a systematic enhancement of hydrogen absorption with increasing ball milling time for forming the LaHx, x=2-3 phase. Exposing the precursor to pressures up to 60 GPa with an ammonia borane (BNH6) hydrogen source resulted in a hypervalent LaH4 phase. This LaH4 phase is associated with the suppression of a rhombohedral distortion of the Fm3-m cubic structure after cryomilling the precursor. △ Less

Submitted 30 June, 2025; originally announced June 2025.

Lithography defined semiconductor moires with anomalous in-gap quantum Hall states

Authors: Wei Pan, D. Bruce Burckel, Catalin D. Spataru, Keshab R. Sapkota, Aaron J. Muhowski, Samuel D. Hawkins, John F. Klem, Layla S. Smith, Doyle A. Temple, Zachery A. Enderson, Zhigang Jiang, Komalavalli Thirunavukkuarasu, Li Xiang, Mykhaylo Ozerov, Dmitry Smirnov, Chang Niu, Peide D. Ye, Praveen Pai, Fan Zhang

Abstract: Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproduc… ▽ More Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies. △ Less

Submitted 6 June, 2025; originally announced June 2025.

Comments: published by Nano Letters

Topological phenomena in artificial quantum materials revealed by local Chern markers

Authors: Catalin D. Spataru, Wei Pan, Alexander Cerjan

Abstract: A striking example of frustration in physics is Hofstadter's butterfly, a fractal structure that emerges from the competition between a crystal's lattice periodicity and the magnetic length of an applied field. Current methods for predicting the topological invariants associated with Hofstadter's butterfly are challenging or impossible to apply to a range of materials, including those that are dis… ▽ More A striking example of frustration in physics is Hofstadter's butterfly, a fractal structure that emerges from the competition between a crystal's lattice periodicity and the magnetic length of an applied field. Current methods for predicting the topological invariants associated with Hofstadter's butterfly are challenging or impossible to apply to a range of materials, including those that are disordered or lack a bulk spectral gap. Here, we demonstrate a framework for predicting a material's local Chern markers using its position-space description and validate it against experimental observations of quantum transport in artificial graphene in a semiconductor heterostructure, inherently accounting for fabrication disorder strong enough to close the bulk spectral gap. By resolving local changes in the system's topology, we reveal the topological origins of antidot-localized states that appear in artificial graphene in the presence of a magnetic field. Moreover, we show the breadth of this framework by simulating how Hofstadter's butterfly emerges from an initially unpatterned 2D electron gas as the system's potential strength is increased, and predict that artificial graphene becomes a topological insulator at the critical magnetic field. Overall, we anticipate that a position-space approach to determine a material's Chern invariant without requiring prior knowledge of its occupied states or bulk spectral gaps will enable a broad array of fundamental inquiries and provide a novel route to material discovery, especially in metallic, aperiodic, and disordered systems. △ Less

Submitted 1 March, 2025; originally announced March 2025.

Comments: 8 pages, 4 figures, supplemental materials. In press at Phys. Rev. Lett

Ab initio calculations of low-energy quasiparticle lifetimes in bilayer graphene

Authors: Catalin D. Spataru, François Léonard

Abstract: Motivated by recent experimental results we calculate from first-principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). We take into account the scattering rate arising from electron-electron interactions within the $GW$ approximation for the electron self-energy and consider several p-type doping levels ranging from $0$ to $ρ\approx 2.4\times 10^{12}$ holes/cm$^2$. In the… ▽ More Motivated by recent experimental results we calculate from first-principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). We take into account the scattering rate arising from electron-electron interactions within the $GW$ approximation for the electron self-energy and consider several p-type doping levels ranging from $0$ to $ρ\approx 2.4\times 10^{12}$ holes/cm$^2$. In the undoped case we find that the average inverse lifetime scales linearly with energy away from the charge neutrality point, with values in good agreement with experiments. The decay rate is approximately three times larger than in monolayer graphene, a consequence of the enhanced screening in BLG. In the doped case, the dependence of the inverse lifetime on quasiparticle energy acquires a non-linear component due to the opening of an additional decay channel mediated by acoustic plasmons. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Comments: 15 pages, 3 figures, accepeted for publication in Applied Physics Letters

Tunable intervalence charge transfer in ruthenium Prussian blue analogue enables stable and efficient biocompatible artificial synapses

Authors: Donald A. Robinson, Michael E. Foster, Christopher H. Bennett, Austin Bhandarkar, Elizabeth R. Webster, Aleyna Celebi, Nisa Celebi, Elliot J. Fuller, Vitalie Stavila, Catalin D. Spataru, David S. Ashby, Matthew J. Marinella, Raga Krishnakumar, Mark D. Allendorf, A. Alec Talin

Abstract: Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and elec… ▽ More Emerging concepts for neuromorphic computing, bioelectronics, and brain-computer interfacing inspire new research avenues aimed at understanding the relationship between oxidation state and conductivity in unexplored materials. Here, we present ruthenium Prussian blue analogue (RuPBA), a mixed valence coordination compound with an open framework structure and ability to conduct both ionic and electronic charge, for flexible artificial synapses that reversibly switch conductance by more than four orders of magnitude based on electrochemically tunable oxidation state. Retention of programmed states is improved by nearly two orders of magnitude compared to the extensively studied organic polymers, thus reducing the frequency, complexity and energy costs associated with error correction schemes. We demonstrate dopamine detection using RuPBA synapses and biocompatibility with neuronal cells, evoking prospective application for brain-computer interfacing. By application of electron transfer theory to in-situ spectroscopic probing of intervalence charge transfer, we elucidate a switching mechanism whereby the degree of mixed valency between N-coordinated Ru sites controls the carrier concentration and mobility, as supported by DFT. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Tuning the critical Li intercalation concentrations for MoX$_2$ bilayer phase transitions

Authors: C. D. Spataru, M. D. Witman, R. E. Jones

Abstract: Transition metal dichalcogenides (TMDs), such as MoS$_2$, are known to undergo a structural phase transformation as well as a change in the electronic conductivity upon Li intercalation. These properties make them candidates for charge-tunable ion-insertion materials that could be used in electro-chemical devices. In this work we study the phase stability and electronic structure of H and T… ▽ More Transition metal dichalcogenides (TMDs), such as MoS$_2$, are known to undergo a structural phase transformation as well as a change in the electronic conductivity upon Li intercalation. These properties make them candidates for charge-tunable ion-insertion materials that could be used in electro-chemical devices. In this work we study the phase stability and electronic structure of H and T$^\prime$ Li-intercalated MoX$_2$ bilayers with X=S, Se, or Te. Using first-principles calculations in combination with classical and machine learning modeling approaches, we find that the H phase is more stable at low Li concentration for all X, and the critical Li concentration at which the T$^\prime\to$H transition occurs decreases with increasing mass of X. Furthermore the relative free energy of the two phases becomes less sensitive to Li insertion with increasing atomic mass of the chalcogen atom X. While the electronic conductivity increases with increasing ion concentration at low concentrations, we do not observe a (positive) conductivity jump at the phase transition from H to T$^\prime$. △ Less

Submitted 26 July, 2021; originally announced July 2021.

Comments: 34 pages, 15 figures, accepted for publication in Phys. Rev. Materials

Nanoscale functionalized superconducting transport channels as photon detectors

Authors: Catalin D. Spataru, François Léonard

Abstract: Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could provide improved performance in addition to decoupling the absorption and transduction processes. Here we study the properties of such a detector consisting of a nano… ▽ More Single-photon detectors have typically consisted of macroscopic materials where both the photon absorption and transduction to an electrical signal happen. Newly proposed designs suggest that large arrays of nanoscale detectors could provide improved performance in addition to decoupling the absorption and transduction processes. Here we study the properties of such a detector consisting of a nanoscale superconducting (SC) transport channel functionalized by a photon absorber. We explore two detection mechanisms based on photo-induced electrostatic gating and magnetic effects. To this end we model the narrow channel as a one-dimensional atomic chain and use a self-consistent Keldysh-Nambu Green's function formalism to describe non-equilibrium effects and SC phenomena. We consider cases where the photon creates electrostatic and magnetic changes in the absorber, as well as devices with strong and weak coupling to the metal leads. Our results indicate that the most promising case is when the SC channel is weakly coupled to the leads and in the presence of a background magnetic field, where photo-excitation of a magnetic molecule can trigger a SC-to-normal transition in the channel that leads to a change in the device current several times larger than in the case of a normal-phase channel device. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Comments: 12 pages, 12 figures, Phys. Rev. B in press

Journal ref: Physical Review B 103, 134512 (2021)

Quantum dynamics of single-photon detection using functionalized quantum transport electronic channels

Authors: Catalin D. Spataru, François Léonard

Abstract: Single photon detectors have historically consisted of macroscopic-sized materials but recent experimental and theoretical progress suggests new approaches based on nanoscale and molecular electronics. Here we present a theoretical study of photodetection in a system composed of a quantum electronic transport channel functionalized by a photon absorber. Notably, the photon field, absorption proces… ▽ More Single photon detectors have historically consisted of macroscopic-sized materials but recent experimental and theoretical progress suggests new approaches based on nanoscale and molecular electronics. Here we present a theoretical study of photodetection in a system composed of a quantum electronic transport channel functionalized by a photon absorber. Notably, the photon field, absorption process, transduction mechanism, and measurement process are all treated as part of one fully-coupled quantum system, with explicit interactions. Using non-equilibrium, time-dependent quantum transport simulations, we reveal the unique temporal signatures of the single photon detection process, and show that the system can be described using optical Bloch equations, with a new non-linearity as a consequence of time-dependent detuning caused by the backaction from the transport channel via the dynamical Stark effect. We compute the photodetector signal-to-noise ratio and demonstrate that single photon detection at high count rate is possible for realistic parameters by exploiting a novel non-equilibrium control of backaction. △ Less

Submitted 6 August, 2019; originally announced August 2019.

Comments: 12 pages, 8 figures, to appear in Phys. Rev. Research

Journal ref: Phys. Rev. Research 1, 013018 (2019)

Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

Authors: Gunta Kunakova, Luca Galletti, Sophie Charpentier, Jana Andzane, Donats Erts, Francois Leonard, Catalin D. Spataru, Thilo Bauch, Floriana Lombardi

Abstract: Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se… ▽ More Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that size confinement should help reduce contributions from bulk carriers. Here we demonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by size confinement, thus revealing the high mobility topological surface states. Magneto transport and Hall conductance measurements, in single nanoribbons, show that at thicknesses below 30nm the bulk transport is completely suppressed which is supported by self-consistent band-bending calculations. The results highlight the importance of material growth and geometrical confinement to properly exploit the unique properties of the topological surface states. △ Less

Submitted 22 March, 2019; originally announced March 2019.

Journal ref: Nanoscale 2018, 10, 19595

Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride

Authors: D. L. Medlin, N. Yang, C. D. Spataru, L. M. Hale, Y. Mishin

Abstract: Tetradymite-structured chalcogenides such as bismuth telluride Bi_{2}Te_{3} are of significant interest for thermoelectric energy conversion and as topological insulators. Dislocations play a critical role during synthesis and processing of such materials and can strongly affect their functional properties. The dislocations between quintuple layers present special interest since their core structu… ▽ More Tetradymite-structured chalcogenides such as bismuth telluride Bi_{2}Te_{3} are of significant interest for thermoelectric energy conversion and as topological insulators. Dislocations play a critical role during synthesis and processing of such materials and can strongly affect their functional properties. The dislocations between quintuple layers present special interest since their core structure is controlled by the van der Waals interactions between the layers. In this work, using atomic-resolution electron microscopy, we resolve the basal dislocation core structure in Bi_{2}Te_{3}, quantifying the disregistry of the atomic planes across the core. We show that, despite the existence of a stable stacking fault in the basal plane gamma surface, the dislocation core spreading is mainly due to the weak bonding between the layers, which leads to a small energy penalty for layer sliding parallel to the van der Waals gap. Calculations within a semidiscrete variational Peierls-Nabarro model informed by first-principles calculations support our experimental findings. △ Less

Submitted 23 April, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 10, 1820 (2019)

Atomistic study of an ideal metal/thermoelectric contact: the full-Heusler/half-Heusler interface

Authors: Catalin D. Spataru, Yuping He, François Léonard

Abstract: Half-Heusler alloys such as the (Zr,Hf)NiSn intermetallic compounds are important thermoelectric materials for converting waste heat into electricity. Reduced electrical resistivity at the hot interface between the half-Heusler material and a metal contact is critical for device performance, however this has yet to be achieved in practice. Recent experimental work suggests that a coherent interfac… ▽ More Half-Heusler alloys such as the (Zr,Hf)NiSn intermetallic compounds are important thermoelectric materials for converting waste heat into electricity. Reduced electrical resistivity at the hot interface between the half-Heusler material and a metal contact is critical for device performance, however this has yet to be achieved in practice. Recent experimental work suggests that a coherent interface between half-Heusler and full-Heusler compounds can form due to diffusion of transition metal atoms into the vacant sublattice of the half-Heusler lattice. We study theoretically the structural and electronic properties of such an interface using a first-principles based approach that combines {\it ab initio} calculations with macroscopic modeling. We find that the prototypical interface HfNi$_2$Sn/HfNiSn provides very low contact resistivity and almost ohmic behavior over a wide range of temperatures and doping levels. Given the potential of these interfaces to remain stable over a wide range of temperatures, our study suggests that full-Heuslers might provide nearly ideal electrical contacts to half-Heuslers that can be harnessed for efficient thermoelectric generator devices. △ Less

Submitted 18 December, 2018; originally announced December 2018.

Comments: 8 pages, 8 figures

Journal ref: APL Materials 7, 013202 (2019)

First principles study of hBN-AlN short-period superlattice heterostructures

Authors: Catalin D. Spataru, Mary H. Crawford, Andrew A. Allerman

Abstract: We report a theoretical study of the structural, electronic and optical properties of hBN-AlN superlattice heterostructures (SL) using a first-principles approach based on standard and hybrid Density Functional Theory. We consider short-period ($L<10$ nm) SL and find that their properties depend strongly on the AlN layer thickness $L_{AlN}$. For $L_{AlN}\lesssim1$ nm, AlN stabilizes into the hexag… ▽ More We report a theoretical study of the structural, electronic and optical properties of hBN-AlN superlattice heterostructures (SL) using a first-principles approach based on standard and hybrid Density Functional Theory. We consider short-period ($L<10$ nm) SL and find that their properties depend strongly on the AlN layer thickness $L_{AlN}$. For $L_{AlN}\lesssim1$ nm, AlN stabilizes into the hexagonal phase and SL display insulating behavior with type II interface band alignment and optical gaps as small as $5.2$ eV. The wurtzite phase forms for thicker AlN layers. In these cases built-in electric fields lead to formation of polarization compensating charges as well as two-dimensional conductive behavior for electronic transport along interfaces. We also find defect-like states localized at interfaces which are optically active in the visible range. △ Less

Submitted 18 December, 2018; originally announced December 2018.

Comments: 5 pages, 5 figures + Suppl. Mat., to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 114, 011903 (2019)

Atomistic Study of the Electronic Contact Resistivity Between the Half-Heusler Alloys (HfCoSb, HfZrCoSb, HfZrNiSn) and the Metal Ag

Authors: Yuping He, François Léonard, Catalin D. Spataru

Abstract: Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts, and the expected values of con… ▽ More Half-Heusler(HH) alloys have shown promising thermoelectric properties in the medium and high temperature range. To harness these material properties for thermoelectric applications, it is important to realize electrical contacts with low electrical contact resistivity. However, little is known about the detailed structural and electronic properties of such contacts, and the expected values of contact resistivity. Here, we employ atomistic ab initio calculations to study electrical contacts in a subclass of HH alloys consisting of the compounds HfCoSb, HfZrCoSb, and HfZrNiSn. By using Ag as a prototypical metal, we show that the termination of the HH material critically determines the presence or absence of strong deformations at the interface. Our study includes contacts to doped materials, and the results indicate that the p-type materials generally form ohmic contacts while the n-type materials have a small Schottky barrier. We calculate the temperature dependence of the contact resistivity in the low to medium temperature range and provide quantitative values that set lower limits for these systems. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Comments: 20 pages, 7 figures + Suppl. Mat., accepted for publication in Phys. Rev. Materials

Journal ref: Physical Review MATERIALS 2, 065401 (2018)

Interlayer coupling and gate-tunable excitons in transition metal dichalcogenide heterostructures

Authors: Shiyuan Gao, Li Yang, Catalin D. Spataru

Abstract: Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy excitonic state. In this work, we calculate the electronic and optical properties of such heterostructures with the first-principles GW+Bethe-Salpeter Equation (BSE) me… ▽ More Bilayer van der Waals (vdW) heterostructures such as MoS2/WS2 and MoSe2/WSe2 have attracted much attention recently, particularly because of their type II band alignments and the formation of interlayer exciton as the lowest-energy excitonic state. In this work, we calculate the electronic and optical properties of such heterostructures with the first-principles GW+Bethe-Salpeter Equation (BSE) method and reveal the important role of interlayer coupling in deciding the excited-state properties, including the band alignment and excitonic properties. Our calculation shows that due to the interlayer coupling, the low energy excitons can be widely tunable by a vertical gate field. In particular, the dipole oscillator strength and radiative lifetime of the lowest energy exciton in these bilayer heterostructures is varied by over an order of magnitude within a practical external gate field. We also build a simple model that captures the essential physics behind this tunability and allows the extension of the ab initio results to a large range of electric fields. Our work clarifies the physical picture of interlayer excitons in bilayer vdW heterostructures and predicts a wide range of gate-tunable excited-state properties of 2D optoelectronic devices. △ Less

Submitted 13 December, 2017; originally announced December 2017.

Comments: 16 pages with 4 figures and 1 table

Journal ref: Nano Letters, 17, 7809 (2017)

High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts

Authors: Yuping He, François Léonard, Douglas L. Medlin, Nicholas Baldasaro, Dorota S. Temple, Philip Barletta, Catalin D. Spataru

Abstract: V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-tellurid… ▽ More V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. Here we present a combination of experimental and theoretical efforts to understand, design and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, we develop an experimental approach to fabricate low resistivity metal contacts to V-telluride thin film superlattices, achieving a 100-fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy show the unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, we harness the improved contacts to realize an improved high-performance thermoelectric cooling module. △ Less

Submitted 22 November, 2017; originally announced November 2017.

Comments: 36 pages, 11 figures (includes SI) to appear in Advanced Electronic Materials

Dynamic Wavelength-Tunable Photodetector Using Subwavelength Graphene Field-Effect Transistors

Authors: François Léonard, Catalin D. Spataru, Michael Goldflam, David W. Peters, Thomas E. Beechem

Abstract: Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to… ▽ More Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the simple expectations based on vertical transitions. We find strong focusing of the electromagnetic fields at the contact edges over the same length scale as the band-bending. Both of these spatially-varying potentials lead to an enhancement of non-vertical optical transitions, which dominate even the absence of phonon or impurity scattering. We also show that the vanishing density of states near the Dirac point leads to contact blocking and a gate-dependent modulation of the photocurrent. △ Less

Submitted 6 March, 2017; originally announced March 2017.

Comments: To appear in Scientific Reports

Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators

Authors: Catalin D. Spataru, Francois Leonard

Abstract: Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fe… ▽ More Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fermi level is located in the conduction band, leading to n-type Ohmic contact to the first quintuplet. Furthermore, we find strong charge transfer and band-bending in the first few quintuplets, with no Schottky barrier for charge injection even when the topoplogical insulator is undoped. Our calculations indicate that Au and graphene leave the spin-momentum locking mostly unaltered, but on the other hand, Ni, Pd, and Pt strongly hybridize with Bi2Se3 and relax spin-momentum locking. Our results indicate that judicious choice of the contact metal is essential to reveal the unique surface features of topological insulators. △ Less

Submitted 21 July, 2014; originally announced July 2014.

Comments: Manuscript + Supplemental Material

Electronic and optical gap renormalization in carbon nanotubes near a metallic surface

Authors: Catalin D. Spataru

Abstract: Renormalization of quasiparticles and excitons in carbon nanotubes (CNTs) near a metallic surface has been studied within a many-body formalism using an embedding approach newly implemented in the GW and Bethe-Salpeter methods. The quasiparticle bandgap renormalization in semiconducting CNTs is found to scale as -1/(2h_a), with h_a the apparent nanotube height, and it can exceed half an eV. Also,… ▽ More Renormalization of quasiparticles and excitons in carbon nanotubes (CNTs) near a metallic surface has been studied within a many-body formalism using an embedding approach newly implemented in the GW and Bethe-Salpeter methods. The quasiparticle bandgap renormalization in semiconducting CNTs is found to scale as -1/(2h_a), with h_a the apparent nanotube height, and it can exceed half an eV. Also, the binding energy of excitons is reduced dramatically -by as much as 75%- near the surface. Compensation between quasiparticle and excitonic effects results in small changes in the optical gap. The important role played by the nanotube screening response in establishing these effects is emphasized and a simple electrostatic model with no adjustable parameters explains the results of state-of-the-art calculations and generalizes them to a large variety of CNTs. △ Less

Submitted 29 August, 2013; originally announced August 2013.

Comments: 8 pages, 3 figures, Phys. Rev. B

Journal ref: Physical Review B, 88, 125412 (2013)

Many-body effects on the electronic and optical properties of strained semiconducting carbon nanotubes

Authors: Catalin D. Spataru, François Léonard

Abstract: We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined with the Bethe-Salpeter equation to obtain the optical absorption spectrum. We find that the dependence of the electronic bandgaps on strain is more complex tha… ▽ More We present many-body \textit{ab initio} calculations of the electronic and optical properties of semiconducting zigzag carbon nanotubes under uniaxial strain. The GW approach is utilized to obtain the quasiparticle bandgaps and is combined with the Bethe-Salpeter equation to obtain the optical absorption spectrum. We find that the dependence of the electronic bandgaps on strain is more complex than previously predicted based on tight-binding models or density-functional theory. In addition, we show that the exciton energy and exciton binding energy depend significantly on strain, with variations of tens of meVs per percent strain, but that despite these strong changes the absorbance is found to be nearly independent of strain. Our results provide new guidance for the understanding and design of optomechanical systems based on carbon nanotubes. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Comments: To appear in Physical Review B

Scaling properties of the Anderson model in the Kondo regime studied by $σG σW$ formalism

Authors: Catalin D. Spataru

Abstract: The symmetric Anderson model for a single impurity coupled to two leads is studied at strong interaction using the GW approximation within the $σG σW$ formalism. We find that the low energy properties show universal scaling behavior in the asymptotic regime. While the GW scaling functions are similar in form to the scaling functions known from the numerically exact solution, they are characterized… ▽ More The symmetric Anderson model for a single impurity coupled to two leads is studied at strong interaction using the GW approximation within the $σG σW$ formalism. We find that the low energy properties show universal scaling behavior in the asymptotic regime. While the GW scaling functions are similar in form to the scaling functions known from the numerically exact solution, they are characterized by a different parameter value indicating that GW fails to describe correctly spin correlations between the impurity and lead electrons. We also compare the GW and exact Kondo scales for a broad range of the interaction strength. In contrast to the exponential behavior shown by the exact solution, the GW Kondo scale depends algebraically on the interaction strength. △ Less

Submitted 4 November, 2010; originally announced November 2010.

Comments: accepted for publication in Phys. Rev. B

Tunable bandgaps and excitons in doped semiconducting carbon nanotubes made possible by acoustic plasmons

Authors: Catalin D. Spataru, François Léonard

Abstract: Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, bandgaps and exciton binding… ▽ More Doping of semiconductors is essential in modern electronic and photonic devices. While doping is well understood in bulk semiconductors, the advent of carbon nanotubes and nanowires for nanoelectronic and nanophotonic applications raises some key questions about the role and impact of doping at low dimensionality. Here we show that for semiconducting carbon nanotubes, bandgaps and exciton binding energies can be dramatically reduced upon experimentally relevant doping, and can be tuned gradually over a broad range of energies in contrast to higher dimensional systems. The later feature is made possible by a novel mechanism involving strong dynamical screening effects mediated by acoustic plasmons. △ Less

Submitted 2 May, 2010; originally announced May 2010.

Comments: 5 pages, 4 figures, published in Phys. Rev. Lett.

Journal ref: PRL 104, 177402 (2010)

Angle-resolved photoemission spectra of graphene from first-principles calculations

Authors: Cheol-Hwan Park, Feliciano Giustino, Catalin D. Spataru, Marvin L. Cohen, Steven G. Louie

Abstract: Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for directly probing electron dynamics in solids. The energy vs. momentum dispersion relations and the associated spectral broadenings measured by ARPES provide a wealth of information on quantum many-body interaction effects. In particular, ARPES allows studies of the Coulomb interaction among electrons (elec… ▽ More Angle-resolved photoemission spectroscopy (ARPES) is a powerful experimental technique for directly probing electron dynamics in solids. The energy vs. momentum dispersion relations and the associated spectral broadenings measured by ARPES provide a wealth of information on quantum many-body interaction effects. In particular, ARPES allows studies of the Coulomb interaction among electrons (electron-electron interactions) and the interaction between electrons and lattice vibrations (electron-phonon interactions). Here, we report ab initio simulations of the ARPES spectra of graphene including both electron-electron and electron-phonon interactions on the same footing. Our calculations reproduce some of the key experimental observations related to many-body effects, including the indication of a mismatch between the upper and lower halves of the Dirac cone. △ Less

Submitted 15 January, 2010; originally announced January 2010.

Journal ref: Nano Lett. 9, 4234-4239 (2009)

GW approach to Anderson model out of equilibrium: Coulomb blockade and false hysteresis in the I-V characteristics

Authors: Catalin D. Spataru, Mark S. Hybertsen, Steven G. Louie, Andrew J. Millis

Abstract: The Anderson model for a single impurity coupled to two leads is studied using the $GW$ approximation in the strong electron-electron interaction regime as a function of the alignment of the impurity level relative to the chemical potentials in the leads. We employ a non-equilibrium Green's function technique to calculate the electron self-energy, the spin density and the current as a function o… ▽ More The Anderson model for a single impurity coupled to two leads is studied using the $GW$ approximation in the strong electron-electron interaction regime as a function of the alignment of the impurity level relative to the chemical potentials in the leads. We employ a non-equilibrium Green's function technique to calculate the electron self-energy, the spin density and the current as a function of bias across the junction. In addition we develop an expression for the change in the expectation value of the energy of the system that results when the impurity is coupled to the leads, including the role of Coulomb interactions through the electron self energy in the region of the junction. The current-voltage characteristics calculated within the GW approximation exhibit Coulomb blockade. Depending on the gate voltage and applied bias, we find that there can be more than one steady-state solution for the system, which may give rise to a hysteresis in the I-V characteristics. We show that the hysteresis is an artifact of the $GW$ approximation and would not survive if quantum fluctuations beyond the $GW$ approximation are included. △ Less

Submitted 15 March, 2009; originally announced March 2009.

First-Principles Study of Electron Linewidths in Graphene

Authors: Cheol-Hwan Park, Feliciano Giustino, Catalin D. Spataru, Marvin L. Cohen, Steven G. Louie

Abstract: We present first-principles calculations of the linewidths of low-energy quasiparticles in n-doped graphene arising from both the electron-electron and the electron-phonon interactions. The contribution to the electron linewidth arising from the electron-electron interactions vary significantly with wavevector at fixed energy; in contrast, the electron-phonon contribution is virtually wavevector… ▽ More We present first-principles calculations of the linewidths of low-energy quasiparticles in n-doped graphene arising from both the electron-electron and the electron-phonon interactions. The contribution to the electron linewidth arising from the electron-electron interactions vary significantly with wavevector at fixed energy; in contrast, the electron-phonon contribution is virtually wavevector-independent. These two contributions are comparable in magnitude at a binding energy of ~0.2 eV, corresponding to the optical phonon energy. The calculated linewidths, with both electron-electron and electron-phonon interactions included, explain to a large extent the linewidths seen in recent photoemission experiments. △ Less

Submitted 20 February, 2009; originally announced February 2009.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 102, 076803 (2009)

Electronic correlation in nanoscale junctions: Comparison of the GW approximation to a numerically exact solution of the single-impurity Anderson model

Authors: Xin Wang, Catalin D. Spataru, Mark S. Hybertsen, Andrew J. Millis

Abstract: The impact of electronic correlation in nanoscale junctions, e.g. formed by single molecules, is analyzed using the single-impurity Anderson model. Numerically exact Quantum Monte Carlo calculations are performed to map out the orbital filling, linear response conductance and spectral function as a function of the Coulomb interaction strength and the impurity level position. These numerical resu… ▽ More The impact of electronic correlation in nanoscale junctions, e.g. formed by single molecules, is analyzed using the single-impurity Anderson model. Numerically exact Quantum Monte Carlo calculations are performed to map out the orbital filling, linear response conductance and spectral function as a function of the Coulomb interaction strength and the impurity level position. These numerical results form a benchmark against which approximate, but more broadly applicable, approaches to include electronic correlation in transport can be compared. As an example, the self consistent GW approximation has been implemented for the Anderson model and the results compared to this benchmark. For weak coupling or for level positions such that the impurity is either nearly empty or nearly full, the GW approximation is found to be accurate. However, for intermediate or strong coupling, the GW approximation does not properly represent the impact of spin or charge fluctuations. Neither the spectral function nor the linear response conductance are accurately given across the Coulomb blockade plateau and well into the mixed valence regimes. △ Less

Submitted 14 December, 2007; v1 submitted 16 October, 2007; originally announced October 2007.

Comments: 11 pages, 10 figures

Journal ref: Phys. Rev. B 77, 045119 (2008)

First direct observation of Dirac fermions in graphite

Authors: S. Y. Zhou, G. -H. Gweon, J. Graf, A. V. Fedorov, C. D. Spataru, R. D. Diehl, Y. Kopelevich, D. -H. Lee, Steven G. Louie, A. Lanzara

Abstract: Originating from relativistic quantum field theory, Dirac fermions have been recently applied to study various peculiar phenomena in condensed matter physics, including the novel quantum Hall effect in graphene, magnetic field driven metal-insulator-like transition in graphite, superfluid in 3He, and the exotic pseudogap phase of high temperature superconductors. Although Dirac fermions are prop… ▽ More Originating from relativistic quantum field theory, Dirac fermions have been recently applied to study various peculiar phenomena in condensed matter physics, including the novel quantum Hall effect in graphene, magnetic field driven metal-insulator-like transition in graphite, superfluid in 3He, and the exotic pseudogap phase of high temperature superconductors. Although Dirac fermions are proposed to play a key role in these systems, so far direct experimental evidence of Dirac fermions has been limited. Here we report the first direct observation of massless Dirac fermions with linear dispersion near the Brillouin zone (BZ) corner H in graphite, coexisting with quasiparticles with parabolic dispersion near another BZ corner K. In addition, we report a large electron pocket which we attribute to defect-induced localized states. Thus, graphite presents a novel system where massless Dirac fermions, quasiparticles with finite effective mass, and defect states all contribute to the low energy electronic dynamics. △ Less

Submitted 2 August, 2006; originally announced August 2006.

Comments: Nature Physics, in press

Journal ref: Nature Phys. 2, 595-599 (2006)

Selection Rules for One- and Two-Photon Absorption by Excitons in Carbon Nanotubes

Authors: Eduardo B. Barros, Rodrigo. B. Capaz, Ado Jorio, Georgii G. Samsonidze, Antonio G. Souza Filho, Sohrab Ismail-Beigi, Catalin D. Spataru, Steven G. Louie, Gene Dresselhaus, Mildred S. Dresselhaus

Abstract: Recent optical absorption/emission experiments showed that the lower energy optical transitions in carbon nanotubes are excitonic in nature, as predicted by theory. These experiments were based on the symmetry aspects of free electron-hole states and bound excitonic states. The present work shows, however, that group theory does not predict the selection rules needed to explain the two photon ex… ▽ More Recent optical absorption/emission experiments showed that the lower energy optical transitions in carbon nanotubes are excitonic in nature, as predicted by theory. These experiments were based on the symmetry aspects of free electron-hole states and bound excitonic states. The present work shows, however, that group theory does not predict the selection rules needed to explain the two photon experiments. We obtain the symmetries and selection rules for the optical transitions of excitons in single-wall carbon nanotubes within the approach of the group of the wavevector, thus providing important information for the interpretation of theoretical and experimental optical spectra of these materials. △ Less

Submitted 29 June, 2006; originally announced June 2006.

Comments: 4 pages, 1 figure, 1 table

Journal ref: Phys. Rev. B 73, 241406 (2006)

Diameter and Chirality Dependence of Exciton Properties in Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Sohrab Ismail-Beigi, Steven G. Louie

Abstract: We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes (SWNTs). Using results and insights from {\it ab initio} calculations, we employ a symmetry-based, variational method based on the effective-mass and envelope-function approximations using tight-binding wavefunctions. Binding en… ▽ More We calculate the diameter and chirality dependences of the binding energies, sizes, and bright-dark splittings of excitons in semiconducting single-wall carbon nanotubes (SWNTs). Using results and insights from {\it ab initio} calculations, we employ a symmetry-based, variational method based on the effective-mass and envelope-function approximations using tight-binding wavefunctions. Binding energies and spatial extents show a leading dependence with diameter as $1/d$ and $d$, respectively, with chirality corrections providing a spread of roughly 20% with a strong family behavior. Bright-dark exciton splittings show a $1/d^2$ leading dependence. We provide analytical expressions for the binding energies, sizes, and splittings that should be useful to guide future experiments. △ Less

Submitted 18 June, 2006; originally announced June 2006.

Excitons and Many-Electron Effects in the Optical Response of Single-Walled Boron Nitride Nanotubes

Authors: Cheol-Hwan Park, Catalin D. Spataru, Steven G. Louie

Abstract: We report first-principles calculations of the effects of quasiparticle self-energy and electron-hole interaction on the optical properties of single-walled BN nanotubes. Excitonic effects are shown to be even more important in BN nanotubes than in carbon nanotubes. Electron-hole interactions give rise to complexes of bright (and dark) excitons, which qualitatively alter the optical response. Ex… ▽ More We report first-principles calculations of the effects of quasiparticle self-energy and electron-hole interaction on the optical properties of single-walled BN nanotubes. Excitonic effects are shown to be even more important in BN nanotubes than in carbon nanotubes. Electron-hole interactions give rise to complexes of bright (and dark) excitons, which qualitatively alter the optical response. Excitons with binding energy larger than 2 eV are found in the (8,0) BN nanotubes. Moreover, unlike the carbon nanotubes, theory predicts that these exciton states are comprised of coherent supposition of transitions from several different subband pairs, giving rise to novel behaviors. △ Less

Submitted 29 August, 2005; originally announced August 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 96, 126105 (2006)

Theory and it ab initio calculation of radiative lifetime of excitons in semiconducting carbon nanotubes

Authors: Catalin D. Spataru, Sohrab Ismail-Beigi, Rodrigo B. Capaz, Steven G. Louie

Abstract: We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is however a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the ex… ▽ More We present theoretical analysis and first-principles calculation of the radiative lifetime of excitons in semiconducting carbon nanotubes. An intrinsic lifetime of the order of 10 ps is computed for the lowest optically active bright excitons. The intrinsic lifetime is however a rapid increasing function of the exciton momentum. Moreover, the electronic structure of the nanotubes dictates the existence of dark excitons nearby in energy to each bright exciton. Both effects strongly influence measured lifetime. Assuming a thermal occupation of bright and dark exciton bands, we find an effective lifetime of the order of 10 ns at room temperature, in good accord with recent experiments. △ Less

Submitted 7 July, 2005; v1 submitted 4 July, 2005; originally announced July 2005.

Comments: 12 pages, 3 figures

Coexistence of sharp quasiparticle dispersions and disorder features in graphite

Authors: S. Y. Zhou, G. -H. Gweon, C. D. Spataru, J. Graf, D. -H. Lee, Steven G. Louie, A. Lanzara

Abstract: Angle resolved photoelectron spectroscopy (ARPES) on azimuthally disordered graphite demonstrates that sharp quasiparticle dispersions along the radial direction can coexist with a complete lack of dispersion along the azimuthal direction. This paradoxical coexistence can be explained in terms of van Hove singularities in the angular density of states. In addition, nondispersive features at the… ▽ More Angle resolved photoelectron spectroscopy (ARPES) on azimuthally disordered graphite demonstrates that sharp quasiparticle dispersions along the radial direction can coexist with a complete lack of dispersion along the azimuthal direction. This paradoxical coexistence can be explained in terms of van Hove singularities in the angular density of states. In addition, nondispersive features at the energies of band maxima and saddle points are observed and possible explanations are discussed. This work opens a possibility of studying the electronic structure of layered materials using ARPES even when large single crystals are difficult to obtain. △ Less

Submitted 10 June, 2005; originally announced June 2005.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 71, 161403(R) (2005)

Temperature Dependence of the Band Gap of Semiconducting Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Paul Tangney, Marvin L. Cohen, Steven G. Louie

Abstract: The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality dependence of $E_g(T)$ is obtained, including non-monotonic behavior for certain tubes and distinct ``family'' behavior. These results are traced to a strong and c… ▽ More The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality dependence of $E_g(T)$ is obtained, including non-monotonic behavior for certain tubes and distinct ``family'' behavior. These results are traced to a strong and complex coupling between band-edge states and the lowest-energy optical phonon modes in SWNTs. The $E_g(T)$ curves are modeled by an analytic function with diameter and chirality dependent parameters; these provide a valuable guide for systematic estimates of $E_g(T)$ for any given SWNT. Magnitudes of the temperature shifts at 300 K are smaller than 12 meV and should not affect $(n,m)$ assignments based on optical measurements. △ Less

Submitted 9 December, 2004; originally announced December 2004.

Comments: To appear in Phys. Rev. Lett

Hydrostatic Pressure Effects on the Structural and Electronic Properties of Carbon Nanotubes

Authors: Rodrigo B. Capaz, Catalin D. Spataru, Paul Tangney, Marvin L. Cohen, Steven G. Louie

Abstract: We study the structural and electronic properties of isolated single-wall carbon nanotubes (SWNTs) under hydrostatic pressure using a combination of theoretical techniques: Continuum elasticity models, classical molecular dynamics simulations, tight-binding electronic structure methods, and first-principles total energy calculations within the density-functional and pseudopotential frameworks. F… ▽ More We study the structural and electronic properties of isolated single-wall carbon nanotubes (SWNTs) under hydrostatic pressure using a combination of theoretical techniques: Continuum elasticity models, classical molecular dynamics simulations, tight-binding electronic structure methods, and first-principles total energy calculations within the density-functional and pseudopotential frameworks. For pressures below a certain critical pressure $P_c$, the SWNTs' structure remains cylindrical and the Kohn-Sham energy gaps of semiconducting SWNTs have either positive or negative pressure coefficients depending on the value of $(n,m)$, with a distinct "family" (of the same $n-m$) behavior. The diameter and chirality dependence of the pressure coefficients can be described by a simple analytical expression. At $P_c$, molecular-dynamics simulations predict that isolated SWNTs undergo a pressure-induced symmetry-breaking transformation from a cylindrical shape to a collapsed geometry. This transition is described by a simple elastic model as arising from the competition between the bond-bending and $PV$ terms in the enthalpy. The good agreement between calculated and experimental values of $P_c$ provides a strong support to the ``collapse'' interpretation of the experimental transitions in bundles. △ Less

Submitted 9 September, 2004; originally announced September 2004.

Comments: To appear in the Proceedings of the 11th International Conference on High Pressure Semiconductor Physics (invited paper)

Ab Initio calculation of band gap renormalization in highly excited GaAs

Authors: Catalin D. Spataru, Lorin X. Benedict, Steven G. Louie

Abstract: We present ab initio quasiparticle self-energy calculations in crystalline GaAs for cases of intense electronic excitation (~ 10% of valence electrons excited into conduction band), relevant for high-intensity ultra-short pulsed laser experiments. Calculations are performed using an out-of-equilibrium generalization of the GW approximation based on the Keldysh Green's function approach. Our resu… ▽ More We present ab initio quasiparticle self-energy calculations in crystalline GaAs for cases of intense electronic excitation (~ 10% of valence electrons excited into conduction band), relevant for high-intensity ultra-short pulsed laser experiments. Calculations are performed using an out-of-equilibrium generalization of the GW approximation based on the Keldysh Green's function approach. Our results indicate that while the band gap is a sensitive function of the amount of excitation, it is not possible to induce complete band gap closure in this system by purely electronic means. △ Less

Submitted 11 August, 2004; v1 submitted 21 January, 2004; originally announced January 2004.

Comments: 14 pages, 7 figures, submitted Phys. Rev. B

Excitonic Effects and Optical Spectra of Single-Walled Carbon Nanotubes

Authors: Catalin D. Spataru, Sohrab Ismail-Beigi, Lorin X. Benedict, Steven G. Louie

Abstract: Many-electron effects often dramatically modify the properties of reduced dimensional systems. We report calculations, based on an many-electron Green's function approach, of electron-hole interaction effects on the optical spectra of small-diameter single-walled carbon nanotubes. Excitonic effects qualitatively alter the optical spectra of both semiconducting and metallic tubes. Excitons are bo… ▽ More Many-electron effects often dramatically modify the properties of reduced dimensional systems. We report calculations, based on an many-electron Green's function approach, of electron-hole interaction effects on the optical spectra of small-diameter single-walled carbon nanotubes. Excitonic effects qualitatively alter the optical spectra of both semiconducting and metallic tubes. Excitons are bound by ~ 1 eV in the semiconducting (8,0) tube and by ~ 100 meV in the metallic (3,3) tube. These large many-electron effects explain the discrepancies between previous theories and experiments. △ Less

Submitted 11 August, 2004; v1 submitted 9 October, 2003; originally announced October 2003.

Comments: 6 pages, 3 figures, 2 tables

Anomalous Quasiparticle Lifetime in Graphite: Band Structure Effects

Authors: Catalin D. Spataru, Miguel A. Cazalilla, Angel Rubio, Lorin X. Benedict, Pedro M. Echenique, Steven G. Louie

Abstract: We report ab initio calculation of quasiparticle lifetimes in graphite, as determined from the imaginary part of the self-energy operator within the GW aproximation. The inverse lifetime in the energy range from 0.5 to 3.5 eV above the Fermi level presents significant deviations from the quadratic behavior naively expected from Fermi liquid theory. The deviations are explained in terms of the un… ▽ More We report ab initio calculation of quasiparticle lifetimes in graphite, as determined from the imaginary part of the self-energy operator within the GW aproximation. The inverse lifetime in the energy range from 0.5 to 3.5 eV above the Fermi level presents significant deviations from the quadratic behavior naively expected from Fermi liquid theory. The deviations are explained in terms of the unique features of the band structure of this material. We also discuss the experimental results from different groups and make some predictions for future experiments. △ Less

Submitted 2 July, 2001; originally announced July 2001.

Comments: 4 pages, 4 figures, submitted PRL

Journal ref: Phys. Rev. Lett. 87, 246405 (2001)