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Influence of strong-coupling and retardation effects on superconducting state in ${\rm YB_{6}}$ compound
Authors:
A. M. Bujak,
K. A. Szewczyk,
M. Kostrzewa,
K. M. Szczȩśniak,
M. A. Sowińska
Abstract:
In the framework of strong-coupling formalism, we have calculated the thermodynamic parameters of superconducting state in the ${\rm YB_{6}}$ compound. The values of critical temperature ($T_{C}$) are $9.5$~K and $7.9$~K for the Coulomb pseudopotential $μ^{\star}=0.1$ and $0.2$, respectively. In the paper, we have determined the low temperature values of order parameter ($Δ(0)$), specific heat jum…
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In the framework of strong-coupling formalism, we have calculated the thermodynamic parameters of superconducting state in the ${\rm YB_{6}}$ compound. The values of critical temperature ($T_{C}$) are $9.5$~K and $7.9$~K for the Coulomb pseudopotential $μ^{\star}=0.1$ and $0.2$, respectively. In the paper, we have determined the low temperature values of order parameter ($Δ(0)$), specific heat jump at the critical temperature ($ΔC(T_{C})$), and thermodynamic critical field ($H_C(0)$). The dimensionless thermodynamic ratios: $R_Δ=2Δ\left(0\right)/{k_BT_C}$, $R_C=ΔC\left(T_C\right)/C^N\left(T_C\right)$, and $R_H=T_CC^N\left(T_C\right)/H_C^2\left(0\right)$ are equal to: $R_Δ\left(μ^{\star}\right)\in\lbrace 4.48,4.35\rbrace$, $R_{C}\left(μ^{\star}\right)\in\lbrace 2.62,2.55\rbrace$, and $R_{H}\left(μ^{\star}\right)\in\lbrace 0.146,0.157\rbrace$. Due to the significant strong-coupling and retardation effects ($k_{B}T_{C} / ω_{\rm ln}\sim 0.1$) those values highly deviate from the predictions of BCS theory.
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Submitted 7 May, 2018;
originally announced May 2018.
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Direct growth of low-doped graphene on Ge/Si(001) surfaces
Authors:
J. Dabrowski,
G. Lippert,
J. Avila,
J. Baringhaus,
I. Colambo,
Yu. S. Dedkov,
F. Herziger,
G. Lupina,
J. Maultzsch,
T. Schaffus,
T. Schroeder,
M. Sowinska,
C. Tegenkamp,
D. Vignaud,
M. -C. Asensio
Abstract:
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD an…
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The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by $30^\circ$ with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
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Submitted 8 April, 2016;
originally announced April 2016.
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High-pressure superconducting state in hydrogen
Authors:
A. M. Duda,
R. Szczęśniak,
M. A. Sowińska,
A. H. Kosiacka
Abstract:
The paper determines the thermodynamic parameters of the superconducting state in the metallic atomic hydrogen under the pressure at $1$ TPa, $1.5$ TPa, and $2.5$ TPa. The calculations were conducted in the framework of the Eliashberg formalism. It has been shown that the critical temperature is very high (in the range from $301.2$ K to $437.3$ K), as well as high are the values of the electron ef…
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The paper determines the thermodynamic parameters of the superconducting state in the metallic atomic hydrogen under the pressure at $1$ TPa, $1.5$ TPa, and $2.5$ TPa. The calculations were conducted in the framework of the Eliashberg formalism. It has been shown that the critical temperature is very high (in the range from $301.2$ K to $437.3$ K), as well as high are the values of the electron effective mass (from $3.43$ $m_{e}$ to $6.88$ $m_{e}$), where $m_{e}$ denotes the electron band mass. The ratio of the low-temperature energy gap to the critical temperature explicitly violates the predictions of the BCS theory: $2Δ\left(0\right)/k_{B}T_{C}\in\left<4.84,5.85\right>$. Additionally, the free energy difference between the superconducting and normal state, the thermodynamic critical field, and the specific heat of the superconducting state have been determined. Due to the significant strong-coupling and retardation effects those quantities cannot be correctly described in the framework of the BCS theory.
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Submitted 23 February, 2016;
originally announced February 2016.
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Characteristics of the Eliashberg formalism on the example of high-pressure superconducting state in phosphor
Authors:
A. M. Duda,
R. Szczęśniak,
M. Sowińska,
I. Domagalska
Abstract:
The work describes the properties of the high-pressure superconducting state in phosphor: $p\in\{20, 30, 40, 70\}$ GPa. The calculations were performed in the framework of the Eliashberg formalism, which is the natural generalization of the BCS theory. The exceptional attention was paid to the accurate presentation of the used analysis scheme. With respect to the superconducting state in phosphor…
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The work describes the properties of the high-pressure superconducting state in phosphor: $p\in\{20, 30, 40, 70\}$ GPa. The calculations were performed in the framework of the Eliashberg formalism, which is the natural generalization of the BCS theory. The exceptional attention was paid to the accurate presentation of the used analysis scheme. With respect to the superconducting state in phosphor it was shown that: (i) the observed not-high values of the critical temperature ($\left[T_{C}\right]_{p=30{\rm GPa}}^{\rm max}=8.45$ K) result not only from the low values of the electron - phonon coupling constant, but also from the very strong depairing Coulomb interactions, (ii) the inconsiderable strong - coupling and retardation effects force the dimensionless ratios $R_Δ$, $R_{C}$, and $R_{H}$ - related to the critical temperature, the order parameter, the specific heat and the thermodynamic critical field - to take the values close to the BCS predictions.
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Submitted 21 January, 2016;
originally announced January 2016.
