-
Quantum effects in atomically perfect specular spin valve structures
Authors:
J. M. Teixeira,
J. Ventura,
Yu. G. Pogorelov,
J. B. Sousa
Abstract:
A simple tight-binding theoretical model is proposed for spin dependent, current-in-plane transport in highly coherent spin valve structures under specularity conditions. Using quantum-mechanically coherent and spatially quantized Fermi states in the considered multilayered system, a system of partial Boltzmann kinetic equations is built for relevant subbands to yield the expressions for conduct…
▽ More
A simple tight-binding theoretical model is proposed for spin dependent, current-in-plane transport in highly coherent spin valve structures under specularity conditions. Using quantum-mechanically coherent and spatially quantized Fermi states in the considered multilayered system, a system of partial Boltzmann kinetic equations is built for relevant subbands to yield the expressions for conductance in parallel or antiparallel spin valve states and thus for the magneto-conductance. It is shown that specularity favors the magnetoresistance to reach its theoretical maximum for this structure close to 100%. This result is practically independent of the model parameters, in particular it does not even need that lifetimes of majority and minority carriers be different (as necessary for the quasiclassical regimes). The main MR effect in the considered limit is due to the transformation of coherent quantum states, induced by the relative rotation of magnetization in the FM layers. Numerical calculation based on the specific Boltzmann equation with an account of spin-dependent specular reflection at the interfaces is also performed for a typical choice of material parameters.
△ Less
Submitted 27 November, 2007;
originally announced November 2007.
-
Electrical current-driven pinhole formation and insulator-metal transition in tunnel junctions
Authors:
J. Ventura,
Z. Zhang,
Y. Liu,
J. B. Sousa,
P. P. Freitas
Abstract:
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 Å) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R)…
▽ More
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS effect is here studied in TJs with two thin (20 Å) non-magnetic (NM) Ta electrodes inserted above and below the insulating barrier. We observe resistance (R) switching for positive applied electrical current (flowing from the bottom to the top lead), characterized by a continuous resistance decrease and associated with current-driven displacement of metallic ions from the bottom electrode into the barrier (thin barrier state). For negative currents, displaced ions return into their initial positions in the electrode and the electrical resistance gradually increases (thick barrier state). We measured the temperature (T) dependence of the electrical resistance of both thin- and thick-barrier states ($R_b$ and R$_B$ respectively). Experiments showed a weaker R(T) variation when the tunnel junction is in the $R_b$ state, associated with a smaller tunnel contribution. By applying large enough electrical currents we induced large irreversible R-decreases in the studied TJs, associated with barrier degradation. We then monitored the evolution of the R(T) dependence for different stages of barrier degradation. In particular, we observed a smooth transition from tunnel- to metallic-dominated transport. The initial degradation-stages are related to irreversible barrier thickness decreases (without the formation of pinholes). Only for later barrier degradation stages do we have the appearance of metallic paths between the two electrodes that, however, do not lead to metallic dominated transport for small enough pinhole radius.
△ Less
Submitted 22 February, 2007; v1 submitted 21 February, 2007;
originally announced February 2007.
-
Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area
Authors:
J. Ventura,
R. Ferreira,
J. B. Sousa,
P. P. Freitas
Abstract:
Magnetic tunnel junctions (MTJs) with partially oxidized 9 ÅAlO$_x$-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized magnetic tunnel junctions, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown m…
▽ More
Magnetic tunnel junctions (MTJs) with partially oxidized 9 ÅAlO$_x$-barriers were recently shown to have the necessary characteristics to be used as magnetoresistive sensors in high-density storage devices. Here we study dielectric breakdown in such underoxidized magnetic tunnel junctions, focusing on its dependence on tunnel junction area and oxidation time. A clear relation between breakdown mechanism and junction area is observed for the MTJs with the highest studied oxidation time: samples with large areas fail usually due to extrinsic causes (characterized by a smooth resistance decrease at dielectric breakdown). Small area junctions fail mainly through an intrinsic mechanism (sharp resistance decrease at breakdown). However, this dependence changes for lower oxidation times, with extrinsic breakdown becoming dominant. In fact, in the extremely underoxidized magnetic tunnel junctions, failure is exclusively related with extrinsic causes, independently of MTJ-area. These results are related with the presence of defects in the barrier (weak spots that lead to intrinsic breakdown) and of metallic unoxidized Al nanoconstrictions (leading to extrinsic breakdown).
△ Less
Submitted 18 July, 2006;
originally announced July 2006.
-
Nanoscopic processes of Current Induced Switching in thin tunnel junctions
Authors:
J. Ventura,
J. P. Araujo,
J. B. Sousa,
Y. Liu,
Z. Zhang,
P. P. Freitas
Abstract:
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of low intensity. Such Current Induced Switching (CIS) was recently observed in thin magnetic tunnel junctions, and attributed to electromigration of atoms into/…
▽ More
In magnetic nanostructures one usually uses a magnetic field to commute between two resistance (R) states. A less common but technologically more interesting alternative to achieve R-switching is to use an electrical current, preferably of low intensity. Such Current Induced Switching (CIS) was recently observed in thin magnetic tunnel junctions, and attributed to electromigration of atoms into/out of the insulator. Here we study the Current Induced Switching, electrical resistance, and magnetoresistance of thin MnIr/CoFe/AlO$_x$/CoFe tunnel junctions. The CIS effect at room temperature amounts to 6.9% R-change between the high and low states and is attributed to nanostructural rearrangements of metallic ions in the electrode/barrier interfaces. After switching to the low R-state some electro-migrated ions return to their initial sites through two different energy channels. A low (high) energy barrier of $\sim$0.13 eV ($\sim$0.85 eV) was estimated. Ionic electromigration then occurs through two microscopic processes associated with different types of ions sites/defects. Measurements under an external magnetic field showed an additional intermediate R-state due to the simultaneous conjugation of the MR (magnetic) and CIS (structural) effects.
△ Less
Submitted 8 March, 2006;
originally announced March 2006.
-
Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications
Authors:
J. M. Teixeira,
R. F. A. Silva,
J. Ventura,
A. M. Pereira,
F. Carpinteiro,
J. P. Araujo,
J. B. Sousa,
S. Cardoso,
R. Ferreira,
P. P. Freitas
Abstract:
We present a detailed study on domain imaging, Kerr effect magnetometry (MOKE) and magnetoresistance (MR), for a series of 20 nm Co$_{73.8}$Fe$_{16.2}$B$_{10}$ thin films, both as-deposited (amorphous) and annealed (crystalline). By considering the two different (orthogonal) in-plane magnetization components, obtained by MOKE measurements, we were able to study the uniaxial anisotropy induced du…
▽ More
We present a detailed study on domain imaging, Kerr effect magnetometry (MOKE) and magnetoresistance (MR), for a series of 20 nm Co$_{73.8}$Fe$_{16.2}$B$_{10}$ thin films, both as-deposited (amorphous) and annealed (crystalline). By considering the two different (orthogonal) in-plane magnetization components, obtained by MOKE measurements, we were able to study the uniaxial anisotropy induced during CoFeB-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axis. MOKE magnetic imaging enabled us to observe the dominant magnetization processes, namely domain wall motion and moment rotation. These processes were correlated with the behavior of the magnetoresistance, which depends both on short-range spin disorder electron scattering and on the angle between the electrical current and the spontaneous magnetization ($\emph{\textbf{M}}_{S}$). A simple numerical treatment based on Stoner-Wolfarth model enables us to satisfactorily predict the magnetization behaviour observed in these films. A comparison between the results in Co$_{73.8}$Fe$_{16.2}$B$_{10}$ films and the previous ones obtained in annealed Co$_{80}$Fe$_{20}$ films, show that the introduction of boron in CoFe reduces significatively the coercive and saturation fields along the easy axis (e.g. $H_{c}$ from $\sim$ 2 down to $\sim$ 0.5 kAm$^{-1}$). Also, the magnetization along the hard axis saturates at lower fields. We conclude that amorphous and nanocrystalline CoFeB films show low coercive fields and abrupt switching, as well as absence of short range spin disorder effects after switching when compared with Co$_{80}$Fe$_{20}$.
△ Less
Submitted 16 January, 2006; v1 submitted 18 October, 2005;
originally announced October 2005.
-
Short-range effects and magnetization reversal in Co$_{80}$Fe$_{20}$ thin films: a MOKE magnetometry/domain imaging and AMR study
Authors:
J. M. Teixeira,
R. F. A. Silva,
J. Ventura,
A. Pereira,
J. P. Araujo,
M. Amado,
F. Carpinteiro,
J. B. Sousa,
S. Cardoso,
R. Ferreira,
P. Freitas
Abstract:
A MOKE magnetometry unit simultaneously sensitive to both in-plane magnetization components, based on an intensity differential detection method, allows us to observe the uniaxial anisotropy impressed during CoFe-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axes. Our MOKE imaging unit, using a CCD camera for Kerr effect doma…
▽ More
A MOKE magnetometry unit simultaneously sensitive to both in-plane magnetization components, based on an intensity differential detection method, allows us to observe the uniaxial anisotropy impressed during CoFe-deposition and to discriminate the magnetization processes under a magnetic field parallel and perpendicular to such axes. Our MOKE imaging unit, using a CCD camera for Kerr effect domain visualization provides direct evidence on the dominant M-processes, namely domain wall motion and moment rotation. Further magnetic information was obtained by AMR measurements due to the dependence of the electrical resistivity on the short-range spin disorder and also on the angle between the electrical current direction (I) and the spontaneous magnetization ($\emph{\textbf{M}}_{S}$).
△ Less
Submitted 29 July, 2006; v1 submitted 19 July, 2005;
originally announced July 2005.
-
Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures
Authors:
J. Ventura,
J. B. Sousa,
M. A. Salgueiro da Silva,
P. P. Freitas,
A. Veloso
Abstract:
We report magnetoresistance curves of CoFe nano-oxide specular spin valves of MnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at different temperatures from 300 to 20 K. We extend the Stoner-Wolfarth model of a common spin valve to a specular spin valve, introducing the separation of the pinned layer into two sublayers and their magnetic coupling across the nano-oxide. We study t…
▽ More
We report magnetoresistance curves of CoFe nano-oxide specular spin valves of MnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at different temperatures from 300 to 20 K. We extend the Stoner-Wolfarth model of a common spin valve to a specular spin valve, introducing the separation of the pinned layer into two sublayers and their magnetic coupling across the nano-oxide. We study the effect of different coupling/exchange (between the antiferromagnetic layer and the bottom sublayer) field ratios on the magnetization and magnetoresistance, corresponding with the experimentally observed anomalous bumps in low temperature magnetoresistance curves.
△ Less
Submitted 18 July, 2005;
originally announced July 2005.
-
Electromigration in thin tunnel junctions with ferromagnetic/nonmagnetic: nanoconstrictions, local heating, and direct and wind forces
Authors:
J. Ventura,
J. B. Sousa,
Y. Liu,
Z. Zhang,
P. P. Freitas
Abstract:
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO$_x$ insulating barrier…
▽ More
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions with ferromagnetic (FM) electrodes \emph{i.e} FM/I/FM. This effect was attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier (I). Here we study how the CIS effect is influenced by a thin non-magnetic (NM) Ta layer, deposited just below the AlO$_x$ insulating barrier in tunnel junctions of the type FM/NM/I/FM (FM=CoFe). Enhanced resistance switching occurs with increasing maximum applied current ($\Imax$), until a plateau of constant CIS is reached for $\Imax\sim65$ mA (CIS$\sim$60%) and above. However, such high electrical currents also lead to a large ($\sim$9%) irreversible resistance decrease, indicating barrier degradation. Anomalous voltage-current characteristics with negative derivative were also observed near $\pm\Imax$ and this effect is here attributed to heating in the tunnel junction. One observes that the current direction for which resistance switches in FM/NM/I/FM (clockwise) is opposite to that of FM/I/FM tunnel junctions (anti-clockwise). This effect will be discussed in terms of a competition between the electromigration contributions due to the so called direct and wind forces. It will be shown that the direct force is likely to dominate electromigration in the Ta (NM) layers, while the wind contribution likely dominates in the CoFe (FM) layers.
△ Less
Submitted 25 September, 2005; v1 submitted 29 April, 2005;
originally announced April 2005.
-
Magnetic tuning of tunnel conductivity
Authors:
Yu. G. Pogorelov,
J. B. Sousa,
J. -P. Araujo
Abstract:
Using the simplest two-subband Stoner model, it is shown that the variation of the Fermi energy under applied magnetic field is inverse proportional to the spontaneous magnetization and hence most pronounced close to the critical Stoner condition, that is to the quantum critical point of ferromagnetic transition. The perspectives of this result for magnetic tuning of tunnel conductivity in spint…
▽ More
Using the simplest two-subband Stoner model, it is shown that the variation of the Fermi energy under applied magnetic field is inverse proportional to the spontaneous magnetization and hence most pronounced close to the critical Stoner condition, that is to the quantum critical point of ferromagnetic transition. The perspectives of this result for magnetic tuning of tunnel conductivity in spintronics devices is discussed.
△ Less
Submitted 5 November, 2004;
originally announced November 2004.
-
Cole-Cole analysis of the superspin glass system Co80Fe20/Al2O3
Authors:
O. Petracic,
S. Sahoo,
Ch. Binek,
W. Kleemann,
J. B. Sousa,
S. Cardoso,
P. P. Freitas
Abstract:
Ac susceptibility measurements were performed on discontinuous magnetic multilayers [Co80Fe20(t)/Al2O3(3nm)]x10, t = 0.9 and 1.0nm, by Superconducting Quantum Interference Device (SQUID) magnetometry. The CoFe forms nearly spherical ferromagnetic single-domain nanoparticles in the diamagnetic Al2O3 matrix. Due to dipolar interactions and random distribution of anisotropy axes the system exhibits…
▽ More
Ac susceptibility measurements were performed on discontinuous magnetic multilayers [Co80Fe20(t)/Al2O3(3nm)]x10, t = 0.9 and 1.0nm, by Superconducting Quantum Interference Device (SQUID) magnetometry. The CoFe forms nearly spherical ferromagnetic single-domain nanoparticles in the diamagnetic Al2O3 matrix. Due to dipolar interactions and random distribution of anisotropy axes the system exhibits a spin-glass phase. We measured the ac susceptibility as a function of temperature 20 < T < 100K at different dc fields and as a function of frequency 0.01 < f < 1000Hz. The spectral data were successfully analysed by use of the phenomenological Cole-Cole model, giving a power-law temperature dependence of the characteristic relaxation time tau_c and a high value for the polydispersivity exponent, alpha = 0.8, typical of spin glass systems.
△ Less
Submitted 17 July, 2002;
originally announced July 2002.
