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Engineering of a Layered Ferromagnet via Graphitization: An Overlooked Polymorph of GdAlSi
Authors:
Dmitry V. Averyanov,
Ivan S. Sokolov,
Alexander N. Taldenkov,
Oleg E. Parfenov,
Konstantin V. Larionov,
Pavel B. Sorokin,
Oleg A. Kondratev,
Andrey M. Tokmachev,
Vyacheslav G. Storchak
Abstract:
Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of such compounds is rather narrow, prompting the search for new members. Graphitization - stabilization of layered graphitic structures in the 2D limit - is being discussed for cubic materials. We suggest the phenomenon to extend beyond cubic s…
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Layered magnets are stand-out materials because of their range of functional properties that can be controlled by external stimuli. Regretfully, the class of such compounds is rather narrow, prompting the search for new members. Graphitization - stabilization of layered graphitic structures in the 2D limit - is being discussed for cubic materials. We suggest the phenomenon to extend beyond cubic structures; it can be employed as a viable route to a variety of layered materials. Here, the idea of graphitization is put into practice to produce a new layered magnet, GdAlSi. The honeycomb material, based on graphene-like layers AlSi, is studied both experimentally and theoretically. Epitaxial films of GdAlSi are synthesized on silicon; the critical thickness for the stability of the layered polymorph is around 20 monolayers. Notably, the layered polymorph of GdAlSi demonstrates ferromagnetism stemming from the open 4f-shells of Gd, in contrast to the non-layered, tetragonal polymorph. The ferromagnetism is further supported by electron transport measurements revealing negative magnetoresistance and the anomalous Hall effect. The results show that graphitization can be a powerful tool in the design of functional layered materials.
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Submitted 6 March, 2024;
originally announced March 2024.
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Nano-thermodynamics of chemically induced graphene-diamond transformation
Authors:
Sergey V. Erohin,
Qiyuan Ruan,
Pavel B. Sorokin,
Boris I. Yakobson
Abstract:
Nearly two-dimensional diamond, or diamane, is coveted as ultrathin $sp^3$-carbon film with unique mechanics and electro-optics. The very thinness ($~h$) makes it possible for the surface chemistry, e.g. adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only th…
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Nearly two-dimensional diamond, or diamane, is coveted as ultrathin $sp^3$-carbon film with unique mechanics and electro-optics. The very thinness ($~h$) makes it possible for the surface chemistry, e.g. adsorbed atoms, to shift the bulk phase thermodynamics in favor of diamond, from multilayer graphene. Thermodynamic theory coupled with atomistic first principles computations predicts not only the reduction of required pressure ($p/p_{\infty}>1-h_0/h$), but also the nucleation barriers, definitive for the kinetic feasibility of diamane formation. Moreover, the optimal adsorbent chair-pattern on a bilayer graphene results in a cubic diamond lattice, while for thicker precursors the adsorbent boat-structure tends to produce hexagonal diamond (lonsdaleite), if graphene was in AA` stacking to start with. As adsorbents, H and F are conducive to diamond formation, while Cl appears sterically hindered.
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Submitted 25 October, 2020;
originally announced October 2020.
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Insights into regularity of 2D 3d transition metal monocarbides formation
Authors:
Konstantin V. Larionov,
Gotthard Seifert,
Pavel B. Sorokin
Abstract:
Recently several theoretical predictions were made about 2D planar FeC, CoC, NiC, and CuC while their bulk phases still remain unknown. Here, we present generalization of 2D family of 3d transition metal monocarbides (TMC) by searching their stable configurations with DFT methods and evolutionary algorithm. It is found that in the TMC row (TM = Sc-Cu) a tendency of 3D rocksalt phase formation is m…
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Recently several theoretical predictions were made about 2D planar FeC, CoC, NiC, and CuC while their bulk phases still remain unknown. Here, we present generalization of 2D family of 3d transition metal monocarbides (TMC) by searching their stable configurations with DFT methods and evolutionary algorithm. It is found that in the TMC row (TM = Sc-Cu) a tendency of 3D rocksalt phase formation is monotonously interchanging by 2D phase appearance, namely planar orthorhombic TMC characterized by carbon dimers inside metal hexagons. Among them, orthorhombic CoC and FeC monocarbides would be likely formed rather than any other 2D metal carbide phase or metal/graphene interface.
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Submitted 2 July, 2020;
originally announced July 2020.
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Quantum oscillation and unusual protection mechanism of the surface state in nonsymmorphic semimetals
Authors:
Xue Liu,
Chunlei Yue,
Sergey V. Erohin,
Yanglin Zhu,
Abin Joshy,
Jinyu Liu,
Ana M Sanchez,
David Graf,
Pavel B. Sorokin,
Zhiqiang Mao,
Jin Hu,
Jiang Wei
Abstract:
In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at…
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In a topological semimetal with Dirac or Weyl points, the bulk edge correspondence principle predicts a gapless edge mode if the essential symmetry is still preserved at the surface. The detection of such topological surface state has been considered as the fingerprint prove for crystals with nontrivial topological bulk band. On the contrary, it has been proposed that even with symmetry broken at the surface, a new surface band can emerge in nonsymmorphic topological semimetals. The symmetry reduction at the surface lifts the bulk band degeneracies, produces an unusual floating surface band with trivial topology. Here, we report quantum transport probing to ZrSiSe thin flakes and reveal transport signatures of this new surface state. Remarkably, though topologically trivial, such a surface band exhibit substantial two dimensional Shubnikov de Haas quantum oscillations with high mobility, which signifies a new protection mechanism and may open applications for surface-related devices.
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Submitted 16 June, 2020; v1 submitted 15 November, 2019;
originally announced November 2019.
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High yield production of ultrathin fibroid semiconducting nanowire of Ta$_2$Pd$_3$Se$_8$
Authors:
Xue Liu,
Sheng Liu,
Liubov Yu. Antipina,
Yibo Zhu,
Jinliang Ning,
Jinyu Liu,
Chunlei Yue,
Abin Joshy,
Yu Zhu,
Jianwei Sun,
Ana M Sanchez,
Pavel B. Sorokin,
Zhiqiang Mao,
Qihua Xiong,
Jiang Wei
Abstract:
Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with…
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Immediately after the demonstration of the high-quality electronic properties in various two dimensional (2D) van der Waals (vdW) crystals fabricated with mechanical exfoliation, many methods have been reported to explore and control large scale fabrications. Comparing with recent advancements in fabricating 2D atomic layered crystals, large scale production of one dimensional (1D) nanowires with thickness approaching molecular or atomic level still remains stagnant. Here, we demonstrate the high yield production of a 1D vdW material, semiconducting Ta2Pd3Se8 nanowires, by means of liquid-phase exfoliation. The thinnest nanowire we have readily achieved is around 1 nm, corresponding to a bundle of one or two molecular ribbons. Transmission electron microscopy and transport measurements reveal the as-fabricated Ta2Pd3Se8 nanowires exhibit unexpected high crystallinity and chemical stability. Our low frequency Raman spectroscopy reveals clear evidence of the existing of weak inter-ribbon bindings. The fabricated nanowire transistors exhibit high switching performance and promising applications for photodetectors.
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Submitted 15 November, 2019;
originally announced November 2019.
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Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions
Authors:
János Pető,
Tamás Ollár,
Péter Vancsó,
Zakhar I. Popov,
Gábor Zsolt Magda,
Gergely Dobrik,
Chanyong Hwang,
Pavel B. Sorokin,
Levente Tapasztó
Abstract:
The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural in…
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The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.
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Submitted 2 April, 2019;
originally announced April 2019.
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Effect of Ultrahigh Stiffness of Defective Graphene from Atomistic Point of View
Authors:
Dmitry G. Kvashnin,
Pavel B. Sorokin
Abstract:
Well-known effect of mechanical stiffness degradation under the influence of point defects in macroscopic solids can be controversially reversed in the case of low-dimensional materials. Using atomistic simulation, we showed here that a single-layered graphene film can be sufficiently stiffened by monovacancy defects at a tiny concentration. Our results correspond well with recent experimental dat…
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Well-known effect of mechanical stiffness degradation under the influence of point defects in macroscopic solids can be controversially reversed in the case of low-dimensional materials. Using atomistic simulation, we showed here that a single-layered graphene film can be sufficiently stiffened by monovacancy defects at a tiny concentration. Our results correspond well with recent experimental data and suggest that the effect of mechanical stiffness augmentation is mainly originated from specific bonds distribution in the surrounded monovacancy defects regions. We showed that such unusual mechanical response is the feature of presence of specifically monovacancies, whereas other types of point defects such as divacancy, 555-777 and Stone-Wales defects, lead to the ordinary degradation of the graphene mechanical stiffness.
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Submitted 14 August, 2015;
originally announced August 2015.
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Enhancing Electron Coherence via Quantum Phonon Confinement in Atomically Thin Nb3SiTe6
Authors:
J. Hu,
X. Liu,
C. L. Yue,
J. Y. Liu,
H. W. Zhu,
J. B. He,
J. Wei,
Z. Q. Mao,
L. Yu. Antipina,
Z. I. Popov,
P. B. Sorokin,
T. J. Liu,
P. W. Adams,
S. M. A Radmanesh,
L. Spinu,
H. Ji,
D. Natelson
Abstract:
The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priori…
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The extraordinary properties of two dimensional (2D) materials, such as the extremely high carrier mobility in graphene and the large direct band gaps in transition metal dichalcogenides MX2 (M = Mo or W, X = S, Se) monolayers, highlight the crucial role quantum confinement can have in producing a wide spectrum of technologically important electronic properties. Currently one of the highest priorities in the field is to search for new 2D crystalline systems with structural and electronic properties that can be exploited for device development. In this letter, we report on the unusual quantum transport properties of the 2D ternary transition metal chalcogenide - Nb3SiTe6. We show that the micaceous nature of Nb3SiTe6 allows it to be thinned down to one-unit-cell thick 2D crystals using microexfoliation technique. When the thickness of Nb3SiTe6 crystal is reduced below a few unit-cells thickness, we observed an unexpected, enhanced weak-antilocalization signature in magnetotransport. This finding provides solid evidence for the long-predicted suppression of electron-phonon interaction caused by the crossover of phonon spectrum from 3D to 2D.
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Submitted 1 April, 2015;
originally announced April 2015.
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Spontaneous graphitization of ultrathin cubic structures: A computational study
Authors:
Pavel B. Sorokin,
Alexander G. Kvashnin,
Zhen Zhu,
David Tománek
Abstract:
Results based on {\em ab initio} density functional calculations indicate a general graphitization tendency in ultrathin slabs of cubic diamond, boron nitride, and many other cubic structures including rocksalt. Whereas such compounds often show an energy preference for cubic rather than layered atomic arrangements in the bulk, the surface energy of layered systems is commonly lower than that of t…
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Results based on {\em ab initio} density functional calculations indicate a general graphitization tendency in ultrathin slabs of cubic diamond, boron nitride, and many other cubic structures including rocksalt. Whereas such compounds often show an energy preference for cubic rather than layered atomic arrangements in the bulk, the surface energy of layered systems is commonly lower than that of their cubic counterparts. We determine the critical slab thickness for a range of systems, below which a spontaneous conversion from a cubic to a layered graphitic structure occurs, driven by surface energy reduction in surface-dominated structures.
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Submitted 23 June, 2014;
originally announced June 2014.
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The high hydrogen adsorption rate material based on graphane decorated with alkali metals
Authors:
Liubov Yu. Antipina,
Pavel V. Avramov,
Seiji Sakai,
Hiroshi Naramoto,
Manabu Ohtomo,
Shiro Entani,
Yoshihiro Matsumoto,
Pavel B. Sorokin
Abstract:
The graphane with chemically bonded alkali metals (Li, Na, K) was considered as potential material for hydrogen storage. The ab initio calculations show that such material can adsorb as many as 4 hydrogen molecules per Li, Na and K metal atoms. These values correspond to 12.20 wt%, 10.33 wt% and 8.56 wt% of hydrogen, respectively and exceed the DOE requirements. The thermodynamic analysis shows th…
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The graphane with chemically bonded alkali metals (Li, Na, K) was considered as potential material for hydrogen storage. The ab initio calculations show that such material can adsorb as many as 4 hydrogen molecules per Li, Na and K metal atoms. These values correspond to 12.20 wt%, 10.33 wt% and 8.56 wt% of hydrogen, respectively and exceed the DOE requirements. The thermodynamic analysis shows that Li-graphane complex is the most promising for hydrogen storage with ability to adsorb 3 hydrogen molecules per metal atom at 300 K and pressure in the range from 5 to 250 atm.
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Submitted 21 June, 2013;
originally announced June 2013.
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The impact of edges and dopants on the work function of graphene nanostructures. The way to high electronic emission from pure carbon medium
Authors:
Dmitry G. Kvashnin,
Pavel B. Sorokin,
Jochen W. Bruning,
Leonid A. Chernozatonskii
Abstract:
The impact of the edges and presence of dopants to the work function (WF) of graphene nanoribbons (GNR) and nanoflakes was studied by an ab initio approach. The strong dependence of the WF upon the GNR structure was found and a promising character for the field emission by the donor type impurities was observed. Basing on the predominant impact of the nanostructure edges to the emission properties…
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The impact of the edges and presence of dopants to the work function (WF) of graphene nanoribbons (GNR) and nanoflakes was studied by an ab initio approach. The strong dependence of the WF upon the GNR structure was found and a promising character for the field emission by the donor type impurities was observed. Basing on the predominant impact of the nanostructure edges to the emission properties, the small graphene flakes were investigated as a possible source for the electron emission. The obtained weak dependence of the low WF values of the graphene flakes on their size and shape allows to suggest that the pure carbon medium with high and uniform emission properties can be fabricated by today technology.
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Submitted 13 June, 2013;
originally announced June 2013.
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The influence of size effect on the electronic and elastic properties of diamond films with nanometer thickness
Authors:
Leonid A. Chernozatonskii,
Pavel B. Sorokin,
Alexander A. Kuzubov,
Boris P. Sorokin,
Alexander G. Kvashnin,
Dmitry G. Kvashnin,
Pavel V. Avramov,
Boris I. Yakobson
Abstract:
The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum conf…
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The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum confinement response upon the thickness. Elastic properties of diamanes reveal complex dependence upon increasing of the number of <111> layers. All theoretical results were compared with available experimental data.
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Submitted 31 March, 2011;
originally announced March 2011.
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Patterning Nanoroads and Quantum Dots on Fluorinated Graphene
Authors:
Morgana A. Ribas,
Abhishek K. Singh,
Pavel B. Sorokin,
Boris I. Yakobson
Abstract:
Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electroni…
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Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C$_{4}$F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties.
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Submitted 25 January, 2011; v1 submitted 19 December, 2010;
originally announced December 2010.
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Diamond-Like C2H Nanolayer, Diamane: Simulation of the Structure and Properties
Authors:
Leonid A. Chernozatonskii,
Pavel B. Sorokin,
Alexander G. Kvashnin,
Dmitry G. Kvashnin
Abstract:
We consider a new C2H nanostructure based on bilayer graphene transformed under the covalent bond of hydrogen atoms adsorbed on its external surface, as well as compounds of carbon atoms located opposite each other in neighboring layers. They constitute a "film" of the <111> diamond with a thickness of less than 1 nm, which is called diamane. The energy characteristics and electron spectra of di…
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We consider a new C2H nanostructure based on bilayer graphene transformed under the covalent bond of hydrogen atoms adsorbed on its external surface, as well as compounds of carbon atoms located opposite each other in neighboring layers. They constitute a "film" of the <111> diamond with a thickness of less than 1 nm, which is called diamane. The energy characteristics and electron spectra of diamane, graphene, and diamond are calculated using the density functional theory and are compared with each other. The effective Young's moduli and destruction thresholds of diamane and graphene membranes are determined by the molecular dynamics method. It is shown that C2H diamane is more stable than CH graphane, its dielectric "gap" is narrower than the band gap of bulk diamond (by 0.8 eV) and graphane (by 0.3 eV), and is harder and more brittle than the latter.
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Submitted 2 February, 2010;
originally announced February 2010.
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Metallic beta-phase silicon nanowires: structure and electronic properties
Authors:
Pavel B. Sorokin,
Pavel V. Avramov,
Viktor A. Demin,
Leonid A. Chernozatonskii
Abstract:
Electronic band structure and energetic stability of two types of and oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn nanowires are metastable with zero band gap against to alpha-diamond nanowires. The relative energy of the studied wires tends to the energy of the bulk silicon cryst…
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Electronic band structure and energetic stability of two types of and oriented silicon nanowires in beta-Sn phase with the surface terminated by hydrogen atoms were studied using density functional theory. It was found that beta-Sn nanowires are metastable with zero band gap against to alpha-diamond nanowires. The relative energy of the studied wires tends to the energy of the bulk silicon crystal in beta-Sn phase.
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Submitted 12 June, 2009;
originally announced June 2009.
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Theoretical Study of Atomic Structure and Elastic Properties of Branched Silicon Nanowires
Authors:
Pavel B. Sorokin,
Alexander G. Kvashnin,
Dmitry G. Kvashnin,
Pavel V. Avramov,
Alexander S. Fedorov,
Leonid A. Chernozatonskii
Abstract:
The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the…
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The atomic structure and elastic properties of Y-silicon nanowire junctions of fork- and bough-types were theoretically studied and effective Young modulus were calculated using the Tersoff interatomic potential. In the final stages of bending, new bonds between different parts of the Y-shaped wires are formed. It was found that the stiffness of the nanowires considered can be compared with the stiffness of carbon nanotube Y-junctions.
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Submitted 16 May, 2009;
originally announced May 2009.
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Theoretical Study of Elastic Properties of SiC nanowires of Different Shapes
Authors:
Pavel B. Sorokin,
Dmitry G. Kvashnin,
Alexander G. Kvashnin,
Pavel V. Avramov,
Leonid A. Chernozatonskii
Abstract:
The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular dynamics. The surface relaxation led to surface reconstruction with splitting of the wire geometry to hexagonal (surface) and cubic (bulk) phases. Theoretical calculations of effective Young's modulus and strain ener…
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The atomic structure and elastic properties of silicon carbide nanowires of different shapes and effective sizes were studied using density functional theory and classical molecular dynamics. The surface relaxation led to surface reconstruction with splitting of the wire geometry to hexagonal (surface) and cubic (bulk) phases. Theoretical calculations of effective Young's modulus and strain energies allowed us to explain the key experimental data of the SiC nanowires of different types.
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Submitted 23 March, 2009;
originally announced March 2009.
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Band gap unification of partially Si-substituted single wall carbon nanotubes
Authors:
Pavel V. Avramov,
Pavel B. Sorokin,
Alexander S. Fedorov,
Dmitri G. Fedorov,
Yoshihito Maeda
Abstract:
The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si c…
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The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon atoms by Si leads to a gap opening in the energetic spectrum of the metallic (8,8) SWCNT with approximately quadratic dependence of the band gap upon the Si concentration. The same substitution for the semiconductor (10,0) SWCNT results in a band gap minimum (0.27 eV) at ~25% of Si concentration. In the Si concentration region of 12-18%, both types of nanotubes have less than 0.5 eV direct band gaps at the Gamma-Gamma point. The calculation of the chiral (8,2) SWSi_0.15C_0.85NT system gives a similar (0.6 eV) direct band gap. The regular distribution of Si atoms in the atomic lattice is by ~0.1 eV/atom energetically preferable in comparison with a random distribution. Time dependent DFT calculations showed that the silicon substitution sufficiently increases (roughly by one order of magnitude) the total probability of optical transitions in the near infrared region, which is caused by the opening of the direct band gap in metallic SWCNTs, the unification of the nature and energy of band gaps of all SWCNT species, the large values of <Si3p|r|Si3s> radial integrals and participation of Si3d states in chemical bonding in both valence and conductance bands.
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Submitted 18 September, 2007; v1 submitted 17 September, 2007;
originally announced September 2007.
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The theoretical DFT study of electronic structure of thin Si/SiO2 quantum nanodots and nanowires
Authors:
Pavel V. Avramov,
Alexander A. Kuzubov,
Alexander S. Fedorov,
Pavel B. Sorokin,
Felix N. Tomilin,
Yoshihito Maeda
Abstract:
The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in cluster and PBC approaches using B3LYP/6-31G* and PW PP LDA approximations. The total density of states (TDOS) of the smallest quasispherical silicon quantum dot…
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The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in cluster and PBC approaches using B3LYP/6-31G* and PW PP LDA approximations. The total density of states (TDOS) of the smallest quasispherical silicon quantum dot (Si85) corresponds well to the TDOS of the bulk silicon. The elongated silicon nanodots and 1D nanowires demonstrate the metallic nature of the electronic structure. The surface oxidized layer opens the bandgap in the TDOS of the Si/SiO2 species. The top of the valence band and the bottom of conductivity band of the particles are formed by the silicon core derived states. The energy width of the bandgap is determined by the length of the Si/SiO2 clusters and demonstrates inverse dependence upon the size of the nanostructures. The theoretical data describes the size confinement effect in photoluminescence spectra of the silica embedded nanocrystalline silicon with high accuracy.
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Submitted 15 September, 2007;
originally announced September 2007.
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New symmetric families of silicon quantum dots and their conglomerates as a tunable source of photoluminescence in nanodevices
Authors:
Pavel V. Avramov,
Dmitri G. Fedorov,
Pavel B. Sorokin,
Leonid A. Chernozatonskii,
Mark S. Gordon
Abstract:
We propose a new variety of silicon quantum dots containing fullerene-derived hollows of nearly arbitrary symmetry. Conglomerate structures are designed by connecting the quantum dots through two kinds of junctions. The quantum confinement effect is investigated using semiempirical quantum-mechanical method. It is shown that within each family of quantum dots, the band gap and the stability are…
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We propose a new variety of silicon quantum dots containing fullerene-derived hollows of nearly arbitrary symmetry. Conglomerate structures are designed by connecting the quantum dots through two kinds of junctions. The quantum confinement effect is investigated using semiempirical quantum-mechanical method. It is shown that within each family of quantum dots, the band gap and the stability are inversely proportional to the particle effective size. Quantum dots inherit a wide variety of structural and symmetry properties from their parent fullerenes. The conglomerates confine electrons like quasi-molecules with a peculiar electronic structure related to the junctions. Quantum dots and their conglomerates can host guest atoms in their hollows and therefore present a new promising type of tunable photoluminescent nanomaterials.
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Submitted 14 September, 2007;
originally announced September 2007.
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Multiterminal Nanowire Junctions of Silicon: A Theoretical Prediction of Atomic Structure and Electronic Properties
Authors:
Pavel V. Avramov,
Leonid A. Chernozatonskii,
Pavel B. Sorokin,
Mark S. Gordon
Abstract:
Using empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The E…
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Using empirical scheme, atomic structure of a new exotic class of silicon nanoclusters was elaborated upon the central icosahedral core (Si-IC) and pentagonal petals (Si-PP) growing from Si-IC vertexes. It was shown that Si-IC/Si-PP interface formation is energetically preferable. Some experimental observations of silicon nanostructures can be explained by presence of the proposed objects. The Extended Huckel Theory electronic structure calculations demonstrate an ability of the proposed objects to act as nanoscale tunnel junctions.
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Submitted 14 September, 2007;
originally announced September 2007.
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Two-dimensional semiconducting nanostructures based on single graphene sheets with lines of adsorbed hydrogen atoms
Authors:
Leonid A. Chernozatonskii,
Pavel B. Sorokin,
Jochen W. Bruning
Abstract:
It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the forming of 2HG-SL drastically changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillati…
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It is shown that lines of adsorbed hydrogen pair atoms divide the graphene sheet into strips and form hydrogen-based superlattice structures (2HG-SL). We show that the forming of 2HG-SL drastically changes the electronic properties of graphene from semimetal to semiconductor. The electronic spectra of "zigzag" (n,0) 2HG-SL is similar to that of (n,0) carbon nanotubes and have a similar oscillation of band gap with number n, but with non-zero minimal values. The composite dual-periodic (n,0)+(m,0) 2HG-SLs of "zigzag" strips are analyzed, with the conclusion that they may be treated as quasi-two-dimensional heterostructures. We also suggest an experimental way of fabricating hydrogen superlattices.
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Submitted 7 September, 2007;
originally announced September 2007.
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Superlattices Consisting of "Lines" of Adsorbed Hydrogen Atom Pairs on Graphene
Authors:
L. A. Chernozatonskii,
P. B. Sorokin,
E. E. Belova,
J. Bruning,
A. S. Fedorov
Abstract:
The structures and electron properties of new superlattices formed on graphene by adsorbed hydrogen molecules are theoretically described. It has been shown that superlattices of the (n, 0) zigzag type with linearly arranged pairs of H atoms have band structures similar to the spectra of (n, 0) carbon nanotubes. At the same time, superlattices of the (n, n) type with a "staircase" of adsorbed pa…
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The structures and electron properties of new superlattices formed on graphene by adsorbed hydrogen molecules are theoretically described. It has been shown that superlattices of the (n, 0) zigzag type with linearly arranged pairs of H atoms have band structures similar to the spectra of (n, 0) carbon nanotubes. At the same time, superlattices of the (n, n) type with a "staircase" of adsorbed pairs of H atoms are substantially metallic with a high density of electronic states at the Fermi level and this property distinguishes their spectra from the spectra of the corresponding (n, n) nanotubes. The features of the spectra have the Van Hove form, which is characteristic of each individual superlattice. The possibility of using such planar structures with nanometer thickness is discussed.
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Submitted 9 March, 2007;
originally announced March 2007.
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Metal-semiconductor (semimetal) superlattices on a graphite sheet with vacancies
Authors:
L. A. Chernozatonskii,
P. B. Sorokin,
E. E. Belova,
J. Bruning,
A. S. Fedorov
Abstract:
It has been found that periodically closely spaced vacancies on a graphite sheet cause a significant rearrange-ment of its electronic spectrum: metallic waveguides with a high density of states near the Fermi level are formed along the vacancy lines. In the direction perpendicular to these lines, the spectrum exhibits a semimetal or semiconductor character with a gap where a vacancy miniband is…
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It has been found that periodically closely spaced vacancies on a graphite sheet cause a significant rearrange-ment of its electronic spectrum: metallic waveguides with a high density of states near the Fermi level are formed along the vacancy lines. In the direction perpendicular to these lines, the spectrum exhibits a semimetal or semiconductor character with a gap where a vacancy miniband is degenerated into impurity levels.
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Submitted 13 November, 2006;
originally announced November 2006.
