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Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors
Authors:
Robert K. A. Bennett,
Jan-Lucas Uslu,
Harmon F. Gault,
Asir Intisar Khan,
Lauren Hoang,
Tara Peña,
Kathryn Neilson,
Young Suh Song,
Zhepeng Zhang,
Andrew J. Mannix,
Eric Pop
Abstract:
We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from electrical measurements, enabling automated parameter extraction and technology computer-aided design (TCAD) fitting. To facilitate this task, we implement a simple data augmentation and pre-training approach by training a se…
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We present a deep learning approach to extract physical parameters (e.g., mobility, Schottky contact barrier height, defect profiles) of two-dimensional (2D) transistors from electrical measurements, enabling automated parameter extraction and technology computer-aided design (TCAD) fitting. To facilitate this task, we implement a simple data augmentation and pre-training approach by training a secondary neural network to approximate a physics-based device simulator. This method enables high-quality fits after training the neural network on electrical data generated from physics-based simulations of ~500 devices, a factor >40$\times$ fewer than other recent efforts. Consequently, fitting can be achieved by training on physically rigorous TCAD models, including complex geometry, self-consistent transport, and electrostatic effects, and is not limited to computationally inexpensive compact models. We apply our approach to reverse-engineer key parameters from experimental monolayer WS$_2$ transistors, achieving a median coefficient of determination ($R^2$) = 0.99 when fitting measured electrical data. We also demonstrate that this approach generalizes and scales well by reverse-engineering electrical data on high-electron-mobility transistors while fitting 35 parameters simultaneously. To facilitate future research on deep learning approaches for inverse transistor design, we have published our code and sample data sets online.
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Submitted 7 July, 2025;
originally announced July 2025.
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High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Authors:
Haotian Su,
Yuan-Mau Lee,
Tara Peña,
Sydney Fultz-Waters,
Jimin Kang,
Çağıl Köroğlu,
Sumaiya Wahid,
Christina J. Newcomb,
Young Suh Song,
H. -S. Philip Wong,
Shan X. Wang,
Eric Pop
Abstract:
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous ind…
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Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of ~180 °C and ~340 °C on SiO${_2}$ and HfO${_2}$ substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance (TBC) of 35 ${\pm}$ 12 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on SiO${_2}$, and 51 ${\pm}$ 14 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on HfO${_2}$. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications.
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Submitted 22 April, 2025; v1 submitted 28 January, 2025;
originally announced January 2025.
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The key parameters that govern translation efficiency
Authors:
Dan D. Erdmann-Pham,
Khanh Dao Duc,
Yun S. Song
Abstract:
Translation of mRNA into protein is a fundamental yet complex biological process with multiple factors that can potentially affect its efficiency. Here, we study a stochastic model describing the traffic flow of ribosomes along the mRNA (namely, the inhomogeneous $\ell$-TASEP), and identify the key parameters that govern the overall rate of protein synthesis, sensitivity to initiation rate changes…
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Translation of mRNA into protein is a fundamental yet complex biological process with multiple factors that can potentially affect its efficiency. Here, we study a stochastic model describing the traffic flow of ribosomes along the mRNA (namely, the inhomogeneous $\ell$-TASEP), and identify the key parameters that govern the overall rate of protein synthesis, sensitivity to initiation rate changes, and efficiency of ribosome usage. By analyzing a continuum limit of the model, we obtain closed-form expressions for stationary currents and ribosomal densities, which agree well with Monte Carlo simulations. Furthermore, we completely characterize the phase transitions in the system, and by applying our theoretical results, we formulate design principles that detail how to tune the key parameters we identified to optimize translation efficiency. Using ribosome profiling data from S. cerevisiae, we shows that its translation system is generally consistent with these principles. Our theoretical results have implications for evolutionary biology, as well as synthetic biology.
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Submitted 16 January, 2020; v1 submitted 15 March, 2018;
originally announced March 2018.
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Observation of the predicted charge collective mode of the Tc = 45 K superconducting phase of La2CuO4+δ
Authors:
Y. H. Kim,
Y. S. Song,
P. H. Hor
Abstract:
We report the far-infrared (far-IR) observation of the Goldstone mode at ~ 72 cm-1 (~ 9 meV) predicted to exist in the superconducting phase of the transition temperature (Tc) at 45 K in the La2CuO4-based superconductors. Our observation furthers the experimental support for the two-component picture where the localized charge texture, formed at a specific planar hole density (Ppl), is tied to the…
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We report the far-infrared (far-IR) observation of the Goldstone mode at ~ 72 cm-1 (~ 9 meV) predicted to exist in the superconducting phase of the transition temperature (Tc) at 45 K in the La2CuO4-based superconductors. Our observation furthers the experimental support for the two-component picture where the localized charge texture, formed at a specific planar hole density (Ppl), is tied to the HTS at Tc = 15 K, 30 K, and 45 K in a hierarchical fashion at the so-called "magic" doping level at Ppl = 1/16, 2/16, and 3/16 respectively.
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Submitted 7 September, 2011;
originally announced September 2011.
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The composite picture of the charge carriers in La2-xSrxCuO4 (0.063 < x < 0.11) superconductors
Authors:
Y. H. Kim,
P. H. Hor,
X. L. Dong,
F. Zhou,
Z. X. Zhao,
Y. S. Song,
W. X. Ti
Abstract:
Through far-infrared studies of La2-xSrxCuO4 single crystals for x = 0.063, 0.07, 0.09, and 0.11, we found that only ~ 0.2 % of the total holes participated in the nearly dissipationless normal state charge transport and superconductivity. We have also observed characteristic collective modes at w ~ 18 cm-1 and 22 cm-1 due to the bound carriers in an electronic lattice (EL) state and the free ca…
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Through far-infrared studies of La2-xSrxCuO4 single crystals for x = 0.063, 0.07, 0.09, and 0.11, we found that only ~ 0.2 % of the total holes participated in the nearly dissipationless normal state charge transport and superconductivity. We have also observed characteristic collective modes at w ~ 18 cm-1 and 22 cm-1 due to the bound carriers in an electronic lattice (EL) state and the free carriers are massively screened by the EL. Our findings lead us to propose a composite picture of the charge system where the free carriers are coupled to and riding on the EL. This unique composite system of charge carriers may provide further insights into the understanding of the cuprate physics.
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Submitted 2 December, 2003; v1 submitted 1 March, 2003;
originally announced March 2003.
