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Ultrafast excitation of polar skyrons
Authors:
Huaiyu,
Wang,
Vladimir Stoica,
Cheng Dai,
Marek Paściak,
Sujit Das,
Tiannan Yang,
Mauro A. P. Gonçalves,
Jiri Kulda,
Margaret R. McCarter,
Anudeep Mangu,
Yue Cao,
Hari Padma,
Utkarsh Saha,
Diling Zhu,
Takahiro Sato,
Sanghoon Song,
Mathias Hoffmann,
Patrick Kramer,
Silke Nelson,
Yanwen Sun,
Quynh Nguyen,
Zhan Zhang,
Ramamoorthy Ramesh,
Lane Martin
, et al. (6 additional authors not shown)
Abstract:
Unraveling collective modes arising from coupled degrees of freedom is crucial for understanding complex interactions in solids and developing new functionalities. Unique collective behaviors emerge when two degrees of freedom, ordered on distinct length scales, interact. Polar skyrmions, three-dimensional electric polarization textures in ferroelectric superlattices, disrupt the lattice continuit…
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Unraveling collective modes arising from coupled degrees of freedom is crucial for understanding complex interactions in solids and developing new functionalities. Unique collective behaviors emerge when two degrees of freedom, ordered on distinct length scales, interact. Polar skyrmions, three-dimensional electric polarization textures in ferroelectric superlattices, disrupt the lattice continuity at the nanometer scale with nontrivial topology, leading to previously unexplored collective modes. Here, using terahertz-field excitation and femtosecond x-ray diffraction, we discovered subterahertz collective modes, dubbed 'skyrons', which appear as swirling patterns of atomic displacements functioning as atomic-scale gearsets. Momentum-resolved time-domain measurements of diffuse scattering revealed an avoided crossing in the dispersion relation of skyrons. We further demonstrated that the amplitude and dispersion of skyrons can be controlled by sample temperature and electric-field bias. Atomistic simulations and dynamical phase-field modeling provided microscopic insights into the three-dimensional crystallographic and polarization dynamics. The discovery of skyrons and their coupling with terahertz fields opens avenues for ultrafast control of topological polar structures.
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Submitted 15 May, 2025;
originally announced May 2025.
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PhaseT3M: 3D Imaging at 1.6 Å Resolution via Electron Cryo-Tomography with Nonlinear Phase Retrieval
Authors:
Juhyeok Lee,
Samuel W. Song,
Min Gee Cho,
Georgios Varnavides,
Stephanie M. Ribet,
Colin Ophus,
Mary C. Scott,
Michael L. Whittaker
Abstract:
Electron cryo-tomography (cryo-ET) enables 3D imaging of complex, radiation-sensitive structures with molecular detail. However, image contrast from the interference of scattered electrons is nonlinear with atomic density and multiple scattering further complicates interpretation. These effects degrade resolution, particularly in conventional reconstruction algorithms, which assume linearity. Part…
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Electron cryo-tomography (cryo-ET) enables 3D imaging of complex, radiation-sensitive structures with molecular detail. However, image contrast from the interference of scattered electrons is nonlinear with atomic density and multiple scattering further complicates interpretation. These effects degrade resolution, particularly in conventional reconstruction algorithms, which assume linearity. Particle averaging can reduce such issues but is unsuitable for heterogeneous or dynamic samples ubiquitous in biology, chemistry, and materials sciences. Here, we develop a phase retrieval-based cryo-ET method, PhaseT3M. We experimentally demonstrate its application to a ~7 nm Co3O4 nanoparticle on ~30 nm carbon substrate, achieving a maximum resolution of 1.6 Å, surpassing conventional limits using standard cryo-TEM equipment. PhaseT3M uses a multislice model for multiple scattering and Bayesian optimization for alignment and computational aberration correction, with a positivity constraint to recover 'missing wedge' information. Applied directly to biological particles, it enhances resolution and reduces artifacts, establishing a new standard for routine 3D imaging of complex, radiation-sensitive materials.
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Submitted 22 April, 2025;
originally announced April 2025.
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Extending the Low-Frequency Limit of Time-Domain Thermoreflectance via Periodic Waveform Analysis
Authors:
Mingzhen Zhang,
Tao Chen,
Shangzhi Song,
Yunjia Bao,
Ruiqiang Guo,
Weidong Zheng,
Puqing Jiang,
Ronggui Yang
Abstract:
Time-domain thermoreflectance (TDTR) is a powerful technique for characterizing the thermal properties of layered materials. However, its effectiveness at modulation frequencies below 0.1 MHz is hindered by pulse accumulation effects, limiting its ability to accurately measure in-plane thermal conductivities below 6 W/(m K). Here, we present a periodic waveform analysis-based TDTR (PWA-TDTR) metho…
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Time-domain thermoreflectance (TDTR) is a powerful technique for characterizing the thermal properties of layered materials. However, its effectiveness at modulation frequencies below 0.1 MHz is hindered by pulse accumulation effects, limiting its ability to accurately measure in-plane thermal conductivities below 6 W/(m K). Here, we present a periodic waveform analysis-based TDTR (PWA-TDTR) method that extends the measurable frequency range down to 50 Hz with minimal modifications to the conventional setup. This advancement greatly enhances measurement sensitivity, enabling accurate measurements of in-plane thermal conductivities as low as 0.2 W/(m K). We validate the technique by measuring polymethyl methacrylate (PMMA) and fused silica, using PWA-TDTR to obtain in-plane thermal diffusivity and conventional TDTR to measure cross-plane thermal effusivity. Together, these allow the extraction of both thermal conductivity and volumetric heat capacity, with results in excellent agreement with literature values. We further demonstrate the versatility of PWA-TDTR through (1) thermal conductivity and heat capacity measurements of thin liquid films and (2) depth-resolved thermal conductivity profiling in lithium niobate crystals, revealing point defect-induced inhomogeneities at depths up to 100 um. By overcoming frequency and sensitivity constraints, PWA-TDTR significantly expands the applicability of TDTR, enabling detailed investigations of thermal transport in materials and conditions that were previously challenging to study.
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Submitted 20 April, 2025;
originally announced April 2025.
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Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels
Authors:
Chloe Leblanc,
Hyunmin Cho,
Yinuo Zhang,
Seunguk Song,
Zachary Anderson,
Yunfei He,
Chen Chen,
Joan Redwing,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials offer promising solutions through enabling dual-purpose memory units capable of performing both storage and logic operations. In this study, we demonstrate fer…
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The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials offer promising solutions through enabling dual-purpose memory units capable of performing both storage and logic operations. In this study, we demonstrate ferroelectric field effect transistors (FeFETs) with MoS2 monolayer channels fabricated on ultrathin 5 nm and 10 nm ferroelectric Aluminum Scandium Nitride (AlScN) films. By decreasing the thickness of the ferroelectric film, we achieve significantly reduced gate voltages (<3V) required to switch the conductance of the devices, enabling operation at low voltages compatible with advanced CMOS. We observe a characteristic crossover in hysteresis behavior that varies with film thickness, channel fabrication method, and environmental conditions. Through systematic investigation of multiple parameters including channel fabrication methods, dimensional scaling, and environmental effects, we provide pathways to improve device performance. While our devices demonstrate clear ferroelectric switching behavior, further optimization is required to enhance the ON/OFF ratio at zero gate voltage while continuing to reduce the coercive field of these ultrathin films.
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Submitted 9 April, 2025;
originally announced April 2025.
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First-Principles Investigation of Auxetic Piezoelectric Effect in Nitride Perovskites
Authors:
Yanting Peng,
Zunyi Deng,
Siyu Song,
Gang Tang,
Jiawang Hong
Abstract:
The recently reported auxetic piezoelectric effect, which acts as the electrical counterpart of the negative Poisson's ratio, is of significant technical importance for applications in acoustic wave devices. However, this electric auxetic effect has not yet been reported in perovskite systems. In this work, we employ first-principles calculations to investigate the piezoelectric properties of six…
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The recently reported auxetic piezoelectric effect, which acts as the electrical counterpart of the negative Poisson's ratio, is of significant technical importance for applications in acoustic wave devices. However, this electric auxetic effect has not yet been reported in perovskite systems. In this work, we employ first-principles calculations to investigate the piezoelectric properties of six polar nitride perovskites with the chemical formula ABN3 (A = La, Sc, Y; B = W, Mo). Among these, all compounds except ScMoN3 exhibit the auxetic piezoelectric effect, which is characterized by an unusually positive transverse piezoelectric coefficient, along with a positive longitudinal piezoelectric coefficient. This behavior is in sharp contrast to previously reported results in HfO2, where both the longitudinal and transverse piezoelectric coefficients are negative. These unusual positive transverse piezoelectric coefficients originate from the domination of the positive internal-strain contribution. We further confirm the auxetic piezoelectric effect with finite electric field calculations. Our research enriches the understanding of the piezoelectric properties of nitride perovskites and provides a new compositional space for the design of novel auxetic piezoelectric materials.
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Submitted 28 March, 2025;
originally announced March 2025.
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Observation of giant remnant polarization in ultrathin AlScN at cryogenic temperatures
Authors:
Seunguk Song,
Dhiren K. Pradhan,
Zekun Hu,
Yinuo Zhang,
Rachael N. Keneipp,
Michael A. Susner,
Pijush Bhattacharya,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate…
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The discovery of wurtzite ferroelectrics opens new frontiers in polar materials, yet their behavior at cryogenic temperatures remains unexplored. Here, we reveal unprecedented ferroelectric properties in ultrathin (10 nm) Al$_{0.68}$Sc$_{0.32}$N (AlScN) at cryogenic temperatures where the properties are fundamentally distinct from those of conventional oxide ferroelectrics. At 12 K, we demonstrate a giant remnant polarization exceeding 250 $μ$C/cm$^2$ -- more than twice that of any known ferroelectric -- driven by an enhanced c/a ratio in the wurtzite structure. Our devices sustain remarkably high electric fields (~13 MV/cm) while maintaining reliable switching, achieving over 104 polarization reversal cycles at 12 K. Critically, this breakdown field strength approaches that of passive dielectric materials while maintaining ferroelectric functionality. The extraordinary polarization enhancement and high-field stability at cryogenic temperatures contrasts sharply with oxide ferroelectrics, establishing wurtzite ferroelectrics as a distinct class of polar materials with implications spanning fundamental physics to cryogenic non-volatile memory and quantum technologies.
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Submitted 25 March, 2025;
originally announced March 2025.
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Indium selenides for next-generation low-power computing devices
Authors:
Seunguk Song,
Michael Altvater,
Wonchan Lee,
Hyeon Suk Shin,
Nicholas Glavin,
Deep Jariwala
Abstract:
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alterna…
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As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alternative with distinct advantages for next-generation electronics. Unlike conventional 2D semiconductors, indium selenides combine exceptional electron mobility (exceeding 1,000 cm^2V^-1s^-1), high thermal velocity (>2x10^7 cm/s), thickness-tunable bandgaps (0.97-2.5 eV), and unique phase-dependent ferroelectric properties, enabling both high-performance logic and non-volatile memory functions within a single material system. This perspective critically evaluates the materials properties, fabrication challenges, and device applications of indium selenides, examining their potential to surpass silicon in ultra-scaled transistors through ballistic transport while simultaneously offering ferroelectric memory capabilities impossible in conventional semiconductors. We analyze recent breakthroughs in ballistic InSe transistors, tunnel field-effect transistors, and In2Se3-based ferroelectric devices for information storage, and identify key research priorities for addressing persistent challenges in scalable synthesis, phase control, and oxidation prevention. By bridging fundamental materials science with practical device engineering, we provide a roadmap for translating the exceptional properties of indium selenides into commercially viable, low-power computing technologies that can overcome the limitations of silicon while enabling novel computing architectures.
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Submitted 16 March, 2025;
originally announced March 2025.
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Topotactic Growth of Zintl Phase Eu$_5$In$_2$As$_6$ Nanowires with Antiferromagnetic Behavior
Authors:
Man Suk Song,
Lothar Houben,
Nadav Rothem,
Ambikesh Gupta,
Shai Rabkin,
Beena Kalisky,
Haim Beidenkopf,
Hadas Shtrikman
Abstract:
We demonstrate a topotactic transformation of zincblende InAs(Sb) nanowires into the Zintl phase Eu$_5$In$_2$As$_6$ through a vapor-solid mutual exchange process involving Eu and In in molecular beam epitaxy. This conversion preserves the polyhedral coordination lattice of the parent InAs(Sb) structure while inducing orthorhombic symmetry in the product phase, Eu$_5$In$_2$As$_6$, in which quasi-on…
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We demonstrate a topotactic transformation of zincblende InAs(Sb) nanowires into the Zintl phase Eu$_5$In$_2$As$_6$ through a vapor-solid mutual exchange process involving Eu and In in molecular beam epitaxy. This conversion preserves the polyhedral coordination lattice of the parent InAs(Sb) structure while inducing orthorhombic symmetry in the product phase, Eu$_5$In$_2$As$_6$, in which quasi-one-dimensional [InAs$_3$]$^6$$^-$ chains with tetrahedral sites align along the <110> direction of the zincblende structure. Local and global magnetic characterization identified two distinct antiferromagnetic phase transitions at approximately 7 K and 16 K in Eu$_5$In$_2$As$_6$ nanowires, potentially classified as altermagnetic phases. The versatility of the topotactic conversion of III-V semiconductor nanowires provides a platform for designing functional Zintl materials with tunable magnetic properties, making them promising candidates for spintronic applications.
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Submitted 4 March, 2025;
originally announced March 2025.
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Enhanced Charge Transport in A-site Ordered Perovskite Derivatives A2A'Bi2I9 (A = Cs; A'= Ag, Cu): A First-Principles Study
Authors:
Shuhan Li,
Siyu Song,
Peng Lv,
Shihao Wang,
Jiawang Hong,
Gang Tang
Abstract:
Recent experiments have synthesized Cs2AgBi2I9 by partially substituting Cs+ with Ag+ at the A-site of Cs3Bi2I9, resulting in enhanced charge transport properties compared to Cs3Bi2I9. However, the atomic-scale mechanisms behind this enhancement remain unclear. In this work, we investigate the carrier transport mechanisms in Cs2A'Bi2I9 (A' = Ag, Cu) using first-principles calculations and Boltzman…
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Recent experiments have synthesized Cs2AgBi2I9 by partially substituting Cs+ with Ag+ at the A-site of Cs3Bi2I9, resulting in enhanced charge transport properties compared to Cs3Bi2I9. However, the atomic-scale mechanisms behind this enhancement remain unclear. In this work, we investigate the carrier transport mechanisms in Cs2A'Bi2I9 (A' = Ag, Cu) using first-principles calculations and Boltzmann transport calculations. Our results reveal that A-site ordered Cs2A'Bi2I9 exhibits carrier mobilities that are 3-4 times higher than those of Cs3Bi2I9 within the 100-500 K temperature range. We identify polar phonon scattering as the dominant mechanism limiting mobility. Furthermore, the enhanced out-of-plane carrier mobility in Cs2A'Bi2I9, particularly between 100 and 200K, leads to reduced mobility anisotropy. These improvements are mainly due to the shorter A'-I bond lengths and increased Ag+/Cu+ s-I p orbital coupling. Notably, substitution with Cu+ results in a further reduction in the band gap and enhanced hole mobility compared to Ag+ substitution in Cs3Bi2I9. Further analysis reveals that the significant increase in carrier mobility in Cs2A'Bi2I9 can be largely explained by the smaller carrier effective masses (m*) and weaker Fröhlich coupling strengths (α), resulting in a lower polar mass α(m*/me), compared to Cs3Bi2I9. Our study provides valuable insights into the transport properties of Bi-based perovskite derivatives, paving the way for their future applications in optoelectronic devices.
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Submitted 4 March, 2025;
originally announced March 2025.
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Creation, stabilization, and study at ambient pressure of pressure-induced superconductivity in Bi$_{0.5}$Sb$_{1.5}$Te$_3$
Authors:
Liangzi Deng,
Busheng Wang,
Clayton Halbert,
Daniel J. Schulze,
Melissa Gooch,
Trevor Bontke,
Ting-Wei Kuo,
Xin Shi,
Shaowei Song,
Nilesh Salke,
Hung-Duen Yang,
Zhifeng Ren,
Russell J. Hemley,
Eva Zurek,
Rohit P. Prasankumar,
Ching-Wu Chu
Abstract:
In light of breakthroughs in superconductivity under high pressure, and considering that record critical temperatures (T$_c$s) across various systems have been achieved under high pressure, the primary challenge for higher Tc should no longer solely be to increase T$_c$ under extreme conditions but also to reduce, or ideally eliminate, the need for applied pressure in retaining pressure-induced or…
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In light of breakthroughs in superconductivity under high pressure, and considering that record critical temperatures (T$_c$s) across various systems have been achieved under high pressure, the primary challenge for higher Tc should no longer solely be to increase T$_c$ under extreme conditions but also to reduce, or ideally eliminate, the need for applied pressure in retaining pressure-induced or -enhanced superconductivity. The topological semiconductor Bi$_{0.5}$Sb$_{1.5}$Te$_3$ (BST) was chosen to demonstrate our approach to addressing this challenge and exploring its intriguing physics. Under pressures up to ~ 50 GPa, three superconducting phases (BST-I, -II, and -III) were observed. A superconducting phase in BST-I appears at ~ 4 GPa, without a structural transition, suggesting the possible topological nature of this phase. Using the pressure-quench protocol (PQP) recently developed by us, we successfully retained this pressure-induced phase at ambient pressure and revealed the bulk nature of the state. Significantly, this demonstrates recovery of a pressure-quenched sample from a diamond anvil cell at room temperature with the pressure-induced phase retained at ambient pressure. Other superconducting phases were retained in BST-II and -III at ambient pressure and subjected to thermal and temporal stability testing. Superconductivity was also found in BST with T$_c$ up to 10.2 K, the record for this compound series. While PQP maintains superconducting phases in BST at ambient pressure, both depressurization and PQP enhance its T$_c$, possibly due to microstructures formed during these processes, offering an added avenue to raise T$_c$. These findings are supported by our density-functional theory calculations.
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Submitted 3 February, 2025;
originally announced February 2025.
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High-field Breakdown and Thermal Characterization of Indium Tin Oxide Transistors
Authors:
Haotian Su,
Yuan-Mau Lee,
Tara Peña,
Sydney Fultz-Waters,
Jimin Kang,
Çağıl Köroğlu,
Sumaiya Wahid,
Christina J. Newcomb,
Young Suh Song,
H. -S. Philip Wong,
Shan X. Wang,
Eric Pop
Abstract:
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous ind…
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Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be severely limited by self-heating, especially at higher power and device densities. Here, we investigate the high-field breakdown of ultrathin (~4 nm) amorphous indium tin oxide (ITO) transistors with scanning thermal microscopy (SThM) and multiphysics simulations. The ITO devices break irreversibly at channel temperatures of ~180 °C and ~340 °C on SiO${_2}$ and HfO${_2}$ substrates, respectively, with failure primarily caused by thermally-induced compressive strain near the device contacts. Combining SThM measurements with simulations allows us to estimate a thermal boundary conductance (TBC) of 35 ${\pm}$ 12 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on SiO${_2}$, and 51 ${\pm}$ 14 MWm${^-}$${^2}$K${^-}$${^1}$ for ITO on HfO${_2}$. The latter also enables significantly higher breakdown power due to better heat dissipation and closer thermal expansion matching. These findings provide insights into the thermo-mechanical limitations of indium-based amorphous oxide transistors, which are important for more reliable and high-performance logic and memory applications.
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Submitted 22 April, 2025; v1 submitted 28 January, 2025;
originally announced January 2025.
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Metallicity and Anomalous Hall Effect in Epitaxially-Strained, Atomically-thin RuO2 Films
Authors:
Seung Gyo Jeong,
Seungjun Lee,
Bonnie Lin,
Zhifei Yang,
In Hyeok Choi,
Jin Young Oh,
Sehwan Song,
Seung wook Lee,
Sreejith Nair,
Rashmi Choudhary,
Juhi Parikh,
Sungkyun Park,
Woo Seok Choi,
Jong Seok Lee,
James M. LeBeau,
Tony Low,
Bharat Jalan
Abstract:
The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to dis…
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The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully-strained 2 nm TiO2/t nm RuO2/TiO2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a non-compensated magnetic ground state and reconfigures magnetic ordering in RuO2 (110) thin films. These findings establish ultrathin RuO2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies.
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Submitted 19 January, 2025;
originally announced January 2025.
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Exotic properties and manipulation in 2D semimetal Mn2B2(OH)2: a theoretical study
Authors:
Pingwei Liu,
Dan Liu,
Shixin Song,
Kang Li,
Xueyong Yuan,
Jie Guan
Abstract:
Most functional materials possess one single outstanding property and are limited to be used for a particular purpose. Instead of integrating materials with different functions into one module, designing materials with controllable multi-functions is more promising for the electronic industry. In this study, we investigate an unexplored alpha-phase of two-dimensional (2D) Mn2B2(OH)2 theoretically.…
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Most functional materials possess one single outstanding property and are limited to be used for a particular purpose. Instead of integrating materials with different functions into one module, designing materials with controllable multi-functions is more promising for the electronic industry. In this study, we investigate an unexplored alpha-phase of two-dimensional (2D) Mn2B2(OH)2 theoretically. Eighteen distinct electrical polarizations, characterized by three different magnitudes and twelve different directions, are found in this phase. The switch of the electrical polarizations is also linked to an observed splitting of band structures between different spin states and the ferroelasticity of the system. The manipulation of these properties can be realized through controlling the alignment of Mn-OH-Mn chains. Additionally, the approximately honeycomb lattice for the atomic layer of boron indicate the potential superconductivity in the system. The diverse and tunable properties make the proposed material as an outstanding candidate for sensing applications at the 2D limit.
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Submitted 6 December, 2024;
originally announced December 2024.
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Nanoscale control over single vortex motion in an unconventional superconductor
Authors:
Sang Yong Song,
Chengyun Hua,
Gábor B. Halász,
Wonhee Ko,
Jiaqiang Yan,
Benjamin J. Lawrie,
Petro Maksymovych
Abstract:
To realize braiding of vortex lines and understand the basic properties of the energy landscape for vortex motion, precise manipulation of superconducting vortices on the nanoscale is required. Here, we reveal that a localized trapping potential powerful enough to pull in the vortex line can be created with nanoscale precision on the surface of an FeSe superconductor using the tip of a scanning tu…
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To realize braiding of vortex lines and understand the basic properties of the energy landscape for vortex motion, precise manipulation of superconducting vortices on the nanoscale is required. Here, we reveal that a localized trapping potential powerful enough to pull in the vortex line can be created with nanoscale precision on the surface of an FeSe superconductor using the tip of a scanning tunneling microscope. The mechanism of tip-induced force is traced to local modification of electronic properties and reduction of the superconducting gap, most likely due to tip-induced strain. Intriguingly, the tip-induced trapping potential is much less pronounced along the twin boundaries, dramatically reducing the vortice's degree of motion relative to the surrounding lattice. By enabling nanoscale manipulation of single vortices in Fe-based superconductors, and likely similar materials with strong strain-susceptibility of the superconducting gap, our findings provide an important step toward further development of vortex-based quantum information processing.
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Submitted 18 November, 2024;
originally announced November 2024.
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Reconfigurable SWCNT ferroelectric field-effect transistor arrays
Authors:
Dongjoon Rhee,
Kwan-Ho Kim,
Jeffrey Zheng,
Seunguk Song,
Lian-Mao Peng,
Roy H. Olsson III,
Joohoon Kang,
Deep Jariwala
Abstract:
Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required continuous voltage application for programming gate terminal(s) in addition to the primary gate terminal, which undermines the advantages of reconfigurable devices in r…
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Reconfigurable devices have garnered significant attention for alleviating the scaling requirements of conventional CMOS technology, as they require fewer components to construct circuits with similar function. Prior works required continuous voltage application for programming gate terminal(s) in addition to the primary gate terminal, which undermines the advantages of reconfigurable devices in realizing compact and power-efficient integrated circuits. Here, we realize reconfigurable devices based on a single-gate field-effect transistor (FET) architecture by integrating semiconducting channels consisting of a monolayer film of highly aligned SWCNTs with a ferroelectric AlScN gate dielectric, all compatible with CMOS back-end-of-line (BEOL) processing. We demonstrated these SWCNT ferroelectric FETs (FeFETs) in a centimeter-scale array (~1 cm^2) comprising ~735 devices, with high spatial uniformity in device characteristics across the array. The devices exhibited ambipolar transfer characteristics with high on-state currents and current on/off ratios exceeding 10^5, demonstrating an excellent balance between electron and hole conduction (~270 μA/μm at a drain voltage of 3 V. When functioning as a non-volatile memory, the SWCNT FeFETs demonstrated large memory windows of 0.26 V/nm and 0.08 V/nm in the hole and electron conduction regions, respectively, combined with excellent retention behavior for up to 10^4 s. Repeated reconfiguration between p-FET and n-FET modes was also enabled by switching the spontaneous polarization in AlScN and operating the transistor within a voltage range below the coercive voltage. We revealed through circuit simulations that reconfigurable SWCNT transistors can realize ternary content-addressable memory (TCAM) with far fewer devices compared to circuits based on silicon CMOS technology or based on resistive non-volatile devices.
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Submitted 5 November, 2024;
originally announced November 2024.
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Inter-Cation Charge Transfer Mediated Antiferromagnetism in Co$_{1+x}$Ir$_{2-x}$S$_4$
Authors:
Liang-Wen Ji,
Si-Qi Wu,
Bai-Zhuo Li,
Wu-Zhang Yang,
Shi-Jie Song,
Yi Liu,
Jing Li,
Zhi Ren,
Guang-Han Cao
Abstract:
The antiferromagnetism in transition metal compounds is mostly mediated by the bridging anions through a so-called superexchange mechanism. However, in materials like normal spinels $AB_2X_4$ with local moments only at the $A$ site, such an anion-mediated superexchange needs to be modified. Here we report a new spinel compound Co$_{1+x}$Ir$_{2-x}$S$_4$ ($x$ = 0.3). The physical property measuremen…
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The antiferromagnetism in transition metal compounds is mostly mediated by the bridging anions through a so-called superexchange mechanism. However, in materials like normal spinels $AB_2X_4$ with local moments only at the $A$ site, such an anion-mediated superexchange needs to be modified. Here we report a new spinel compound Co$_{1+x}$Ir$_{2-x}$S$_4$ ($x$ = 0.3). The physical property measurements strongly suggest an antiferromagnetic-like transition at 292 K in the Co($A$) diamond sublattice. The first-principle calculations reveal that the nearest-neighbor Co($A$) spins align antiferromagnetically with an ordered magnetic moment of 1.67 $μ_\mathrm{B}$, smaller than the expected $S = 3/2$ for Co$^{2+}$. In the antiferromagnetic state, there exists an inter-cation charge-transfer gap between the non-bonding Ir-$t_\mathrm{2g}$ orbitals at the valence band maximum and the Co-S antibonding molecular orbitals at the conduction band minimum. The small charge transfer energy significantly enhances the virtual hopping between these two states, facilitating a robust long-range superexchange interaction between two neighboring CoS$_4$ complexes, which accounts for the high Néel temperature in Co$_{1+x}$Ir$_{2-x}$S$_4$. This inter-cation charge transfer mediated magnetic interaction expands the traditional superexchange theory, which could be applicable in complex magnetic materials with multiple cations.
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Submitted 20 October, 2024;
originally announced October 2024.
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An atomic-scale view at Fe4N as hydrogen barrier material
Authors:
Aleksander Albrecht,
Sang Yoon Song,
Chang-Gi Lee,
Mathias Krämer,
Su-Hyun Yoo,
Marcus Hans,
Baptiste Gault,
Yan Ma,
Dierk Raabe,
Seok-Su Sohn,
Yonghyuk Lee,
Se-Ho Kim
Abstract:
Hydrogen, while a promising sustainable energy carrier, presents challenges such as the embrittlement of materials due to its ability to penetrate and weaken their crystal structures. Here we investigate Fe4N nitride layers, formed on iron through a cost-effective gas nitriding process, as an effective hydrogen permeation barrier. A combination of screening using advanced characterization, density…
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Hydrogen, while a promising sustainable energy carrier, presents challenges such as the embrittlement of materials due to its ability to penetrate and weaken their crystal structures. Here we investigate Fe4N nitride layers, formed on iron through a cost-effective gas nitriding process, as an effective hydrogen permeation barrier. A combination of screening using advanced characterization, density functional theory calculations, and hydrogen permeation analysis reveals that a nitride layer reduces hydrogen diffusion by a factor of 20 at room temperature. This reduction is achieved by creating energetically unfavorable states due to stronger H-binding at the surface and high energy barriers for diffusion. The findings demonstrate the potential of Fe4N as a cost-efficient and easy-to-process solution to protecting metallic materials exposed to hydrogen, with great advantages for large-scale applications.
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Submitted 5 October, 2024;
originally announced October 2024.
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Spectroscopic Visualization of Hard Quasi-1D Superconductivity Induced in Nanowires Deposited on a Quasi-2D Indium film
Authors:
Ambikesh Gupta,
Pranab Kumar Nag,
Shai Kiriati,
Samuel D. Escribano,
Man Suk Song,
Hadas Shtrikman,
Yuval Oreg,
Nurit Avraham,
Haim Beidenkopf
Abstract:
Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to investigating the electronic structure at the buried superconducting-semiconducting interface and the nature of the induced superconducting correlations. The pro…
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Following significant progress in the visualization and characterization of hybrid superconducting-semiconducting systems, greatly propelled by reports of Majorana zero modes in nanowire devices, considerable attention has been devoted to investigating the electronic structure at the buried superconducting-semiconducting interface and the nature of the induced superconducting correlations. The properties of that interface and the structure of the electronic wave functions that occupy it determine the functionality and the topological nature of the induced superconducting state. Here, we introduce a novel hybrid platform for proximity-inducing superconductivity in InAs$_{0.6}$Sb$_{0.4}$ nanowires, leveraging a unique architecture and material combination. By dispersing these nanowires over a superconducting Indium film we exploit Indium's high critical temperature of 3.7~K and the anticipated high spin-orbit and Zeeman couplings of InAs$_{0.6}$Sb$_{0.4}$. This design preserves the pristine top facet of the nanowires, making it highly compatible with scanning tunneling spectroscopy. Using this architecture we demonstrate that the mechanical contact supports Cooper-pair transparency as high as 90\%, comparable with epitaxial interfaces. The anisotropic angular response to an applied magnetic field shows the quasi-two-dimensional nature of the parent superconductivity in the Indium film and the quasi-one-dimensional nature of the induced superconductivity in the nanowires. Our platform offers robust and advantageous foundations for studying the emergence of topological superconductivity and the interplay of superconductivity and magnetism using atomic-scale spectroscopic tools.
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Submitted 29 September, 2024;
originally announced September 2024.
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Absence of itinerant ferromagnetism in a cobalt-based oxypnictide
Authors:
Hua-Xun Li,
Hao Jiang,
Yi-Qiang Lin,
Jia-Xin Li,
Shi-Jie Song,
Qin-Qing Zhu,
Zhi Ren,
Guang-Han Cao
Abstract:
We report a layered transition-metal-ordered oxypnictide Sr$_{2}$CrCoAsO$_{3}$. The new material was synthesized by solid-state reactions under vacuum. It has an intergrowth structure with a perovskite-like Sr$_3$Cr$_2$O$_6$ unit and ThCr$_2$Si$_2$-type SrCo$_2$As$_2$ block stacking coherently along the crystallographic $c$ axis. The measurements of electrical resistivity, magnetic susceptibility,…
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We report a layered transition-metal-ordered oxypnictide Sr$_{2}$CrCoAsO$_{3}$. The new material was synthesized by solid-state reactions under vacuum. It has an intergrowth structure with a perovskite-like Sr$_3$Cr$_2$O$_6$ unit and ThCr$_2$Si$_2$-type SrCo$_2$As$_2$ block stacking coherently along the crystallographic $c$ axis. The measurements of electrical resistivity, magnetic susceptibility, and specific heat indicate metallic conductivity from the CoAs layers and short-range antiferromagnetic ordering in the CrO$_{2}$ planes. No itinerant-electron ferromagnetism expected in CoAs layers is observed. This result, combined with the first-principles calculations and the previous reports of other CoAs-layer-based materials, suggests that the Co$-$Co bondlength plays a crucial role in the emergence of itinerant ferromagnetism.
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Submitted 10 September, 2024;
originally announced September 2024.
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Imaging ultrafast electronic domain fluctuations with X-ray speckle visibility
Authors:
N. Hua,
Y. Sun,
P. Rao,
N. Zhou Hagström,
B. K. Stoychev,
E. S. Lamb,
M. Madhavi,
S. T. Botu,
S. Jeppson,
M. Clémence,
A. G. McConnell,
S. -W. Huang,
S. Zerdane,
R. Mankowsky,
H. T. Lemke,
M. Sander,
V. Esposito,
P. Kramer,
D. Zhu,
T. Sato,
S. Song,
E. E. Fullerton,
O. G. Shpyrko,
R. Kukreja,
S. Gerber
Abstract:
Speckle patterns manifesting from the interaction of coherent X-rays with matter offer a glimpse into the dynamics of nanoscale domains that underpin many emergent phenomena in quantum materials. While the dynamics of the average structure can be followed with time-resolved X-ray diffraction, the ultrafast evolution of local structures in nonequilibrium conditions have thus far eluded detection du…
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Speckle patterns manifesting from the interaction of coherent X-rays with matter offer a glimpse into the dynamics of nanoscale domains that underpin many emergent phenomena in quantum materials. While the dynamics of the average structure can be followed with time-resolved X-ray diffraction, the ultrafast evolution of local structures in nonequilibrium conditions have thus far eluded detection due to experimental limitations, such as insufficient X-ray coherent flux. Here we demonstrate a nonequilibrium speckle visibility experiment using a split-and-delay setup at an X-ray free-electron laser. Photoinduced electronic domain fluctuations of the magnetic model material Fe$_{3}$O$_{4}$ reveal changes of the trimeron network configuration due to charge dynamics that exhibit liquid-like fluctuations, analogous to a supercooled liquid phase. This suggests that ultrafast dynamics of electronic heterogeneities under optical stimuli are fundamentally different from thermally-driven ones.
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Submitted 19 August, 2024;
originally announced August 2024.
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Unconventional Hall effects in a quasi-kagome Kondo Weyl semimetal candidate Ce$_3$TiSb$_5$
Authors:
Xiaobo He,
Ying Li,
Yongheng Ge,
Hai Zeng,
Shi-Jie Song,
Shuo Zou,
Zhuo Wang,
Yuke Li,
Wenxin Ding,
Jianhui Dai,
Guang-Han Cao,
Xiao-Xiao Zhang,
Gang Xu,
Yongkang Luo
Abstract:
It is generally believed that electronic correlation, geometric frustration, and topology, \textit{individually}, can facilitate the emergence of various intriguing properties that have attracted a broad audience for both fundamental research and potential applications. Here, we report a systematic investigation on a quasi-kagome Kondo Weyl semimetal candidate Ce$_3$TiSb$_5$. A series of unconvent…
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It is generally believed that electronic correlation, geometric frustration, and topology, \textit{individually}, can facilitate the emergence of various intriguing properties that have attracted a broad audience for both fundamental research and potential applications. Here, we report a systematic investigation on a quasi-kagome Kondo Weyl semimetal candidate Ce$_3$TiSb$_5$. A series of unconventional Hall effects are observed. In the paramagnetic phase, signature of dynamic $c$-$f$ hybridization is revealed by a reduction of anomalous Hall effect and is connected to frustration-promoted incoherent Kondo scattering. A large topological Hall effect exceeding 0.2 $μΩ$ cm is found at low temperatures, which should be ascribed to the noncolinear magnetic structures of the frustrated quasi-kagome lattice. In addition, a peculiar loop-shaped Hall effect with switching chirality is also seen, which is inferred to be associated with magnetic domain walls that pin history-dependent spin chirality and / or Fermi-arc surface states projected from the in-gap Weyl nodes. These exotic results place Ce$_3$TiSb$_5$ in a regime of highly-frustrated antiferromagnetic dense Kondo lattice with a nontrivial topology on an ``extended" global phase diagram, and highlight the interplay among electronic correlation, geometric frustration and topology.
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Submitted 8 August, 2024;
originally announced August 2024.
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Dynamics of Nanoscale Phase Decomposition in Laser Ablation
Authors:
Yanwen Sun,
Chaobo Chen,
Thies J. Albert,
Haoyuan Li,
Mikhail I. Arefev,
Ying Chen,
Mike Dunne,
James M. Glownia,
Matthias Hoffmann,
Matthew J. Hurley,
Mianzhen Mo,
Quynh L. Nguyen,
Takahiro Sato,
Sanghoon Song,
Peihao Sun,
Mark Sutton,
Samuel Teitelbaum,
Antonios S. Valavanis,
Nan Wang,
Diling Zhu,
Leonid V. Zhigilei,
Klaus Sokolowski-Tinten
Abstract:
Femtosecond laser ablation is a process that bears both fundamental physics interest and has wide industrial applications. For decades, the lack of probes on the relevant time and length scales has prevented access to the highly nonequilibrium phase decomposition processes triggered by laser excitation. Enabled by the unprecedented intense femtosecond X-ray pulses delivered by an X-ray free electr…
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Femtosecond laser ablation is a process that bears both fundamental physics interest and has wide industrial applications. For decades, the lack of probes on the relevant time and length scales has prevented access to the highly nonequilibrium phase decomposition processes triggered by laser excitation. Enabled by the unprecedented intense femtosecond X-ray pulses delivered by an X-ray free electron laser, we report here results of time-resolved small angle scattering measurements on the dynamics of nanoscale phase decomposition in thin gold films upon femtosecond laser-induced ablation. By analyzing the features imprinted onto the small angle diffraction patterns, the transient heterogeneous density distributions within the ablation plume as obtained from molecular dynamics simulations get direct experimental confirmation.
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Submitted 15 July, 2024;
originally announced July 2024.
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Topological Fermi-arc surface state covered by floating electrons on a two-dimensional electride
Authors:
Chan-young Lim,
Min-Seok Kim,
Dong Cheol Lim,
Sunghun Kim,
Yeonghoon Lee,
Jaehoon Cha,
Gyubin Lee,
Sang Yong Song,
Dinesh Thapa,
Jonathan D. Denlinger,
Seong-Gon Kim,
Sung Wng Kim,
Jungpil Seo,
Yeongkwan Kim
Abstract:
Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromag…
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Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromagnetic electride $[Gd_{2}$C]^{2+}\cdot2e^{-}$. In particular, the presence of Weyl cones and Fermi-arc states is demonstrated through photon energy-dependent ARPES measurements, agreeing with theoretical band structure calculations. Notably, the STM measurements reveal that the Fermi-arc states exist underneath a floating quantum electron liquid on the top Gd layer, forming double-stacked surface states in a heterostructure. Our work thus not only unveils the non-trivial topology of the $[Gd_{2}$C]^{2+}\cdot2e^{-}$ electride but also realizes a surface heterostructure that can host phenomena distinct from the bulk.
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Submitted 12 July, 2024;
originally announced July 2024.
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Dimensionality Engineering of Magnetic Anisotropy from Anomalous Hall Effect in Synthetic SrRuO3 Crystals
Authors:
Seung Gyo Jeong,
Seong Won Cho,
Sehwan Song,
Jin Young Oh,
Do Gyeom Jeong,
Gyeongtak Han,
Hu Young Jeong,
Ahmed Yousef Mohamed,
Woo-suk Noh,
Sungkyun Park,
Jong Seok Lee,
Suyoun Lee,
Young-Min Kim,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designi…
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Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1,500% improvement of coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Submitted 3 July, 2024;
originally announced July 2024.
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Topotaxial Mutual-Exchange Growth of Magnetic Zintl Eu$_3$In$_2$As$_4$ Nanowires with Axion Insulator Classification
Authors:
Man Suk Song,
Lothar Houben,
Yufei Zhao,
Hyeonhu Bae,
Nadav Rothem,
Ambikesh Gupta,
Binghai Yan,
Beena Kalisky,
Magdalena Zaluska-Kotur,
Perla Kacman,
Hadas Shtrikman,
Haim Beidenkopf
Abstract:
Nanomaterials bring to expression unique electronic properties that promote advanced functionality and technologies. Albeit, nanoscale growth presents paramount challenges for synthesis limiting the diversity in structures and compositions. Here, we demonstrate solid-state topotactic exchange that converts Wurtzite InAs nanowires into Zintl phase Eu$_3$In$_2$As$_4$ nanowires. In situ evaporation o…
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Nanomaterials bring to expression unique electronic properties that promote advanced functionality and technologies. Albeit, nanoscale growth presents paramount challenges for synthesis limiting the diversity in structures and compositions. Here, we demonstrate solid-state topotactic exchange that converts Wurtzite InAs nanowires into Zintl phase Eu$_3$In$_2$As$_4$ nanowires. In situ evaporation of Eu and As over InAs nanowire cores in molecular beam epitaxy results in mutual exchange of Eu from the shell and In from the core. A continuous Eu$_3$In$_2$As$_4$ shell thereby grows that gradually consumes the InAs core and converts it into a single phase Eu$_3$In$_2$As$_4$ nanowire. Topotaxy, which facilitates the mutual exchange, is supported by the substructure of the As matrix which is similar across the Wurtzite InAs and Zintl Eu$_3$In$_2$As$_4$. We provide initial evidence of an antiferromagnetic transition at T$_N$ $\sim$ 6.5 K in the Zintl phase Eu$_3$In$_2$As$_4$ nanowires. Ab initio calculation confirms the antiferromagnetic state and classifies Eu$_3$In$_2$As$_4$ as a $C_2 T$ axion insulator hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange growth of Zintl Eu$_3$In$_2$As$_4$ nanowires thus enables the exploration of intricate magneto-topological states of nanomaterials. Moreover, it may open the path for topotactic mutual-exchange synthesis of nanowires made of other exotic compounds.
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Submitted 27 June, 2024;
originally announced June 2024.
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Janus graphene nanoribbons with a single ferromagnetic zigzag edge
Authors:
Shaotang Song,
Yu Teng,
Weichen Tang,
Zhen Xu,
Yuanyuan He,
Jiawei Ruan,
Takahiro Kojima,
Wenping Hu,
Franz J Giessibl,
Hiroshi Sakaguchi,
Steven G Louie,
Jiong Lu
Abstract:
Topological design of pi-electrons in zigzag-edged graphene nanoribbons (ZGNRs) leads to a wealth of magnetic quantum phenomena and exotic quantum phases. Symmetric ZGNRs typically exhibit antiferromagnetically coupled spin-ordered edge states. Eliminating cross-edge magnetic coupling in ZGNRs not only enables the realization of a new class of ferromagnetic quantum spin chains, enabling the explor…
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Topological design of pi-electrons in zigzag-edged graphene nanoribbons (ZGNRs) leads to a wealth of magnetic quantum phenomena and exotic quantum phases. Symmetric ZGNRs typically exhibit antiferromagnetically coupled spin-ordered edge states. Eliminating cross-edge magnetic coupling in ZGNRs not only enables the realization of a new class of ferromagnetic quantum spin chains, enabling the exploration of quantum spin physics and entanglement of multiple qubits in the 1D limit, but also establishes a long-sought carbon-based ferromagnetic transport channel, pivotal for ultimate scaling of GNR-based quantum electronics. However, designing such GNRs entails overcoming daunting challenges, including simultaneous breaking of structural and spin symmetries, and designing elegant precursors for asymmetric fabrication of reactive zigzag edges. Here, we report a general approach for designing and fabricating such ferromagnetic GNRs in the form of Janus GNRs with two distinct edge configurations. Guided by Lieb's theorem and topological classification theory, we devised two JGNRs by asymmetrically introduced a topological defect array of benzene motifs to one zigzag edge, while keeping the opposing zigzag edge unchanged. This breaks structural symmetry and creates a sublattice imbalance within each unit cell, initiating a spin symmetry breaking. Three Z-shape precursors are designed to fabricate one parent ZGNR and two JGNRs with an optimal lattice spacing of the defect array for a complete quench of the magnetic edge states at the defective edge. Characterization via scanning probe microscopy/spectroscopy and first-principles density functional theory confirms the successful fabrication of Janus GNRs with ferromagnetic ground state delocalised along the pristine zigzag edge.
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Submitted 19 October, 2024; v1 submitted 8 June, 2024;
originally announced June 2024.
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2D ferroelectrics and ferroelectrics with 2D: materials and device prospects
Authors:
Chloe Leblanc,
Seunguk Song,
Deep Jariwala
Abstract:
Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductor…
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Ferroelectric and two-dimensional materials are both heavily investigated classes of electronic materials. This is unsurprising since they both have superlative fundamental properties and high-value applications in computing, sensing etc. In this Perspective, we investigate the research topics where 2D semiconductors and ferroelectric materials both in 2D or 3D form come together. 2D semiconductors have unique attributes due to their van der Waals nature that permits their facile integration with any other electronic or optical materials. In addition, the emergence of ferroelectricity in 2D monolayers, multilayers, and artificial structures offers further advantages since traditionally ferroelectricity has been difficult to achieve in extremely thickness scaled materials. In this perspective, we elaborate on the applications of 2D materials + ferroelectricity in non-volatile memory devices highlighting their potential for in-memory computing, neuromorphic computing, optoelectronics, and spintronics. We also suggest the challenges posed by both ferroelectrics and 2D materials, including material/device preparation, and reliable characterizations to drive further investigations at the interface of these important classes of electronic materials.
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Submitted 8 May, 2024;
originally announced May 2024.
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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure
Authors:
Dongwon Shin,
Hyeonbeom Kim,
Sung Ju Hong,
Sehwan Song,
Yeongju Choi,
Youngkuk Kim,
Sungkyun Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid het…
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Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.
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Submitted 13 March, 2024;
originally announced March 2024.
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Hidden domain boundary dynamics towards crystalline perfection
Authors:
A. Mangu,
V. A. Stoica,
H. Zheng,
T. Yang,
M. Zhang,
H. Wang,
Q. L. Nguyen,
S. Song,
S. Das,
P. Meisenheimer,
E. Donoway,
M. Chollet,
Y. Sun,
J. J. Turner,
J. W. Freeland,
H. Wen,
L. W. Martin,
L. -Q. Chen,
V. Gopalan,
D. Zhu,
Y. Cao,
A. M. Lindenberg
Abstract:
A central paradigm of non-equilibrium physics concerns the dynamics of heterogeneity and disorder, impacting processes ranging from the behavior of glasses to the emergent functionality of active matter. Understanding these complex mesoscopic systems requires probing the microscopic trajectories associated with irreversible processes, the role of fluctuations and entropy growth, and the timescales…
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A central paradigm of non-equilibrium physics concerns the dynamics of heterogeneity and disorder, impacting processes ranging from the behavior of glasses to the emergent functionality of active matter. Understanding these complex mesoscopic systems requires probing the microscopic trajectories associated with irreversible processes, the role of fluctuations and entropy growth, and the timescales on which non-equilibrium responses are ultimately maintained. Approaches that illuminate these processes in model systems may enable a more general understanding of other heterogeneous non-equilibrium phenomena, and potentially define ultimate speed and energy cost limits for information processing technologies. Here, we apply ultrafast single shot x-ray photon correlation spectroscopy to resolve the non-equilibrium, heterogeneous, and irreversible mesoscale dynamics during a light-induced phase transition. This approach defines a new way of capturing the nucleation of the induced phase, the formation of transient mesoscale defects at the boundaries of the nuclei, and the eventual annihilation of these defects, even in systems with complex polarization topologies. A non-equilibrium response spanning >10 orders of magnitude in timescales is observed, with multistep behavior similar to the plateaus observed in supercooled liquids and glasses. We show how the observed time-dependent long-time correlations can be understood in terms of the stochastic dynamics of domain walls, encoded in effective waiting-time distributions with power-law tails. This work defines new possibilities for probing the non-equilibrium and correlated dynamics of disordered and heterogeneous media.
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Submitted 21 March, 2024; v1 submitted 7 February, 2024;
originally announced February 2024.
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Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films
Authors:
Rahma Dhani Prasetiyawati,
Seung Gyo Jeong,
Chan-Koo Park,
Sehwan Song,
Sungkyun Park,
Tuson Park,
Woo Seok Choi
Abstract:
4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Abov…
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4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Above $T^{*}$, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of $ρ(T)$ to rigorously determine the $T^{*}$. We further demonstrate that the $T^{*}$ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines $T^{*}$. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
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Submitted 24 January, 2024;
originally announced January 2024.
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In situ coherent X-ray scattering reveals polycrystalline structure and discrete annealing events in strongly-coupled nanocrystal superlattices
Authors:
Matthew J. Hurley,
Christian P. N. Tanner,
Joshua Portner,
James K. Utterback,
Igor Coropceanu,
Garth J. Williams,
Avishek Das,
Andrei Fluerasu,
Yanwen Sun,
Sanghoon Song,
Leo M. Hamerlynck,
Alexander H. Miller,
Priyadarshini Bhattacharyya,
Dmitri V. Talapin,
Naomi S. Ginsberg,
Samuel W. Teitelbaum
Abstract:
Solution-phase bottom up self-assembly of nanocrystals into superstructures such as ordered superlattices is an attractive strategy to generate functional materials of increasing complexity, including very recent advances that incorporate strong interparticle electronic coupling. While the self-assembly kinetics in these systems have been elucidated and related to the product characteristics, the…
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Solution-phase bottom up self-assembly of nanocrystals into superstructures such as ordered superlattices is an attractive strategy to generate functional materials of increasing complexity, including very recent advances that incorporate strong interparticle electronic coupling. While the self-assembly kinetics in these systems have been elucidated and related to the product characteristics, the weak interparticle bonding interactions suggest the superstructures formed could continue to order within the solution long after the primary nucleation and growth have occurred, even though the mechanism of annealing remains to be elucidated. Here, we use a combination of Bragg coherent diffractive imaging and X-ray photon correlation spectroscopy to create real-space maps of supercrystalline order along with a real-time view of the strain fluctuations in aging strongly coupled nanocrystal superlattices while they remain suspended and immobilized in solution. By combining the results, we deduce that the self-assembled superstructures are polycrystalline, initially comprising multiple nucleation sites, and that shear avalanches at grain boundaries continue to increase crystallinity long after growth has substantially slowed. This multimodal approach should be generalizable to characterize a breadth of materials in situ in their native chemical environments, thus extending the reach of high-resolution coherent X-ray characterization to the benefit of a much wider range of physical systems.
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Submitted 3 March, 2024; v1 submitted 11 January, 2024;
originally announced January 2024.
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Hard X-ray Generation and Detection of Nanometer-Scale Localized Coherent Acoustic Wave Packets in SrTiO$_3$ and KTaO$_3$
Authors:
Yijing Huang,
Peihao Sun,
Samuel W. Teitelbaum,
Haoyuan Li,
Yanwen Sun,
Nan Wang,
Sanghoon Song,
Takahiro Sato,
Matthieu Chollet,
Taito Osaka,
Ichiro Inoue,
Ryan A. Duncan,
Hyun D. Shin,
Johann Haber,
Jinjian Zhou,
Marco Bernardi,
Mingqiang Gu,
James M. Rondinelli,
Mariano Trigo,
Makina Yabashi,
Alexei A. Maznev,
Keith A. Nelson,
Diling Zhu,
David A. Reis
Abstract:
We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers.…
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We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers. We quantify key parameters of this process, including the localization size of the strain wavepacket and the energy absorption efficiency, which are determined by the photoelectron and Auger electron cascade dynamics, as well as the electron-phonon interaction. In particular, we obtain the localization size of the observed strain wave packet to be 1.5 and 2.5 nm for bulk SrTiO$_3$ and KTaO$_3$ single crystals, even though there are no nanoscale structures or light-intensity patterns that would ordinarily be required to generate acoustic waves of wavelengths much shorter than the penetration depth. Whereas in GaAs and GaP we do not observe a signal above background. The results provide crucial information on x-ray matter interactions, which sheds light on the mechanism of x-ray energy deposition, and the study of high wavevector acoustic phonons and thermal transport at the nanoscale.
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Submitted 2 January, 2024; v1 submitted 27 December, 2023;
originally announced December 2023.
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Directly observing atomic-scale relaxations of a glass forming liquid using femtosecond X-ray photon correlation spectroscopy
Authors:
Tomoki Fujita,
Yanwen Sun,
Haoyuan Li,
Thies J. Albert,
Sanghoon Song,
Takahiro Sato,
Jens Moesgaard,
Antoine Cornet,
Peihao Sun,
Ying Chen,
Mianzhen Mo,
Narges Amini,
Fan Yang,
Arune Makareviciute,
Garrett Coleman,
Pierre Lucas,
Jan Peter Embs,
Vincent Esposito,
Joan Vila-Comamala,
Nan Wang,
Talgat Mamyrbayev,
Christian David,
Jerome Hastings,
Beatrice Ruta,
Paul Fuoss
, et al. (3 additional authors not shown)
Abstract:
Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order i…
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Glass forming liquids exhibit structural relaxation behaviors, reflecting underlying atomic rearrangements on a wide range of timescales. These behaviors play a crucial role in determining many material properties. However, the relaxation processes on the atomic scale are not well understood due to the experimental difficulties in directly characterizing the evolving correlations of atomic order in disordered systems. Here, taking the model system Ge15Te85, we demonstrate an experimental approach that probes the relaxation dynamics by scattering the coherent X-ray pulses with femtosecond duration produced by X-ray free electron lasers (XFELs). By collecting the summed speckle patterns from two rapidly successive, nearly identical X-ray pulses generated using a split-delay system, we can extract the contrast decay of speckle patterns originating from sample dynamics and observe the full decorrelation of local order on the sub-picosecond timescale. This provides the direct atomic-level evidence of fragile liquid behavior of Ge15Te85. Our results demonstrate the strategy for XFEL-based X-ray photon correlation spectroscopy (XPCS), attaining femtosecond temporal and atomic-scale spatial resolutions. This twelve orders of magnitude extension from the millisecond regime of synchrotron-based XPCS opens a new avenue of experimental studies of relaxation dynamics in liquids, glasses, and other highly disordered systems.
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Submitted 8 June, 2024; v1 submitted 13 December, 2023;
originally announced December 2023.
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Exotic magnetic anisotropy near digitized dimensional Mott boundary
Authors:
Seung Gyo Jeong,
Jihyun Kim,
Taewon Min,
Sehwan Song,
Jin Young Oh,
Woo-suk Noh,
Sungkyun Park,
Tuson Park,
Jong Mok Ok,
Jaekwang Lee,
Woo Seok Choi
Abstract:
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed…
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The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. Our results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.
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Submitted 15 November, 2023;
originally announced November 2023.
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Optical detection of bond-dependent and frustrated spin in the two-dimensional cobalt-based honeycomb antiferromagnet Cu3Co2SbO6
Authors:
Baekjune Kang,
Uksam Choi,
Taek Sun Jung,
Seunghyeon Noh,
Gye-Hyeon Kim,
UiHyeon Seo,
Miju Park,
Jin-Hyun Choi,
Minjae Kim,
GwangCheol Ji,
Sehwan Song,
Hyesung Jo,
Seokjo Hong,
Nguyen Xuan Duong,
Tae Heon Kim,
Yongsoo Yang,
Sungkyun Park,
Jong Mok Ok,
Jung-Woo Yoo,
Jae Hoon Kim,
Changhee Sohn
Abstract:
Two-dimensional honeycomb antiferromagnet becomes an important class of materials as it can provide a route to Kitaev quantum spin liquid, characterized by massive quantum entanglement and fractional excitations. The signatures of its proximity to Kitaev quantum spin liquid in the honeycomb antiferromagnet includes anisotropic bond-dependent magnetic responses and persistent fluctuation by frustra…
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Two-dimensional honeycomb antiferromagnet becomes an important class of materials as it can provide a route to Kitaev quantum spin liquid, characterized by massive quantum entanglement and fractional excitations. The signatures of its proximity to Kitaev quantum spin liquid in the honeycomb antiferromagnet includes anisotropic bond-dependent magnetic responses and persistent fluctuation by frustration in paramagnetic regime. Here, we propose Cu3Co2SbO6 heterostructures as an intriguing honeycomb antiferromagnet for quantum spin liquid, wherein bond-dependent and frustrated spins interact with optical excitons. This system exhibits antiferromagnetism at 16 K with different spin-flip magnetic fields between a bond-parallel and bond-perpendicular directions, aligning more closely with the generalized Heisenberg-Kitaev than the XXZ model. Optical spectroscopy reveals a strong excitonic transition coupled to the antiferromagnetism, enabling optical detection of its spin states. Particularly, such spin-exciton coupling presents anisotropic responses between bond-parallel and bond-perpendicular magnetic field as well as a finite spin-spin correlation function around 40 K, higher than twice its Néel temperature. The characteristic temperature that remains barely changed even under strong magnetic fields highlights the robustness of the spin-fluctuation region. Our results demonstrate Cu3Co2SbO6 as a unique candidate for the quantum spin liquid phase, where the spin Hamiltonian and quasiparticle excitations can be probed and potentially controlled by light.
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Submitted 27 September, 2023;
originally announced September 2023.
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Multi-orbital Kondo screening in strongly correlated polyradical nanographenes
Authors:
Aitor Calvo-Fernández,
Diego Soler-Polo,
Andrés Pinar Solé,
Shaotang Song,
Oleksander Stetsovych,
Manish Kumar,
Guangwu Li,
Jishan Wu,
Jiong Lu,
Asier Eiguren,
María Blanco-Rey,
Pavel Jelínek
Abstract:
We discuss coexistence of Kondo and spin excitation signals in tunneling spectroscopy in strongly correlated polyradical $π$-magnetic nanographenes on a metal surface. The Kondo signal is rationalized by a multi-orbital Kondo screening of the unpaired electrons. The fundamental processes are spin-flips of antiferromagnetic (AFM) order involving charged molecular multiplets. We introduce a~perturba…
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We discuss coexistence of Kondo and spin excitation signals in tunneling spectroscopy in strongly correlated polyradical $π$-magnetic nanographenes on a metal surface. The Kondo signal is rationalized by a multi-orbital Kondo screening of the unpaired electrons. The fundamental processes are spin-flips of antiferromagnetic (AFM) order involving charged molecular multiplets. We introduce a~perturbative model, which provides simple rules to identify the presence of AFM channels responsible for Kondo screening. The Kondo regime is confirmed by numerical renormalization group calculations. This framework can be applied to similar strongly correlated open-shell systems.
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Submitted 15 September, 2023;
originally announced September 2023.
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Identifying Constitutive Parameters for Complex Hyperelastic Materials using Physics-Informed Neural Networks
Authors:
Siyuan Song,
Hanxun Jin
Abstract:
Identifying constitutive parameters in engineering and biological materials, particularly those with intricate geometries and mechanical behaviors, remains a longstanding challenge. The recent advent of Physics-Informed Neural Networks (PINNs) offers promising solutions, but current frameworks are often limited to basic constitutive laws and encounter practical constraints when combined with exper…
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Identifying constitutive parameters in engineering and biological materials, particularly those with intricate geometries and mechanical behaviors, remains a longstanding challenge. The recent advent of Physics-Informed Neural Networks (PINNs) offers promising solutions, but current frameworks are often limited to basic constitutive laws and encounter practical constraints when combined with experimental data. In this paper, we introduce a robust PINN-based framework designed to identify material parameters for soft materials, specifically those exhibiting complex constitutive behaviors, under large deformation in plane stress conditions. Distinctively, our model emphasizes training PINNs with multi-modal synthetic experimental datasets consisting of full-field deformation and loading history, ensuring algorithm robustness even with noisy data. Our results reveal that the PINNs framework can accurately identify constitutive parameters of the incompressible Arruda-Boyce model for samples with intricate geometries, maintaining an error below 5%, even with an experimental noise level of 5%. We believe our framework provides a robust modulus identification approach for complex solids, especially for those with geometrical and constitutive complexity.
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Submitted 23 June, 2024; v1 submitted 29 August, 2023;
originally announced August 2023.
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Topological soliton molecule in quasi 1D charge density wave
Authors:
Taehwan Im,
Sun Kyu Song,
Jae Whan Park,
Han Woong Yeom
Abstract:
Soliton molecules, bound states of two solitons, can be important for the informatics using solitons and the quest for exotic particles in a wide range of physical systems from unconventional superconductors to nuclear matter and Higgs field, but have been observed only in temporal dimension for classical wave optical systems. Here, we identify a topological soliton molecule formed spatially in an…
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Soliton molecules, bound states of two solitons, can be important for the informatics using solitons and the quest for exotic particles in a wide range of physical systems from unconventional superconductors to nuclear matter and Higgs field, but have been observed only in temporal dimension for classical wave optical systems. Here, we identify a topological soliton molecule formed spatially in an electronic system, a quasi 1D charge density wave of indium atomic wires. This system is composed of two coupled Peierls chains, which are endowed with a Z$_4$ topology and three distinct, right-chiral, left-chiral, and non-chiral, solitons. Our scanning tunneling microscopy measurements identify a bound state of right- and left-chiral solitons with distinct in-gap states and net zero phase shift. Our density functional theory calculations reveal the attractive interaction of these solitons and the hybridization of their electronic states. This result initiates the study of the interaction between solitons in electronic systems, which can provide novel manybody electronic states and extra data-handling capacity beyond the given soliton topology.
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Submitted 10 August, 2023;
originally announced August 2023.
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Absence of superconductivity in electron-doped chromium pnictides ThCrAsN$_{1-x}$O$_x$
Authors:
Zhi-Cheng Wang,
Ye-Ting Shao,
Yi-Qiang Lin,
Shi-Jie Song,
Bai-Zhuo Li,
Er-Jian Cheng,
Shi-Yan Li,
Qin-Qing Zhu,
Zhi Ren,
Guang-Han Cao
Abstract:
Theoretical studies predicted possible superconductivity in electron-doped chromium pnictides isostructural to their iron counterparts. Here, we report the synthesis and characterization of a new ZrCuSiAs-type Cr-based compound ThCrAsN, as well as its oxygen-doped variants. All samples of ThCrAsN$_{1-x}$O$_x$ show metallic conduction, but no superconductivity is observed above 30 mK even though th…
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Theoretical studies predicted possible superconductivity in electron-doped chromium pnictides isostructural to their iron counterparts. Here, we report the synthesis and characterization of a new ZrCuSiAs-type Cr-based compound ThCrAsN, as well as its oxygen-doped variants. All samples of ThCrAsN$_{1-x}$O$_x$ show metallic conduction, but no superconductivity is observed above 30 mK even though the oxygen substitution reaches 75\%. The magnetic structure of ThCrAsN is determined to be G-type antiferromagnetic by magnetization measurements and first-principles calculations jointly. The calculations also indicate that the in-plane Cr--Cr direct interaction of ThCrAsN is robust against the heavy electron doping. The calculated density of states of the orbital occupations of Cr for ThCrAs(N,O) is strongly spin-polarized. Our results suggest the similarities between chromium pnictides and iron-based superconductors shouldn't be overestimated.
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Submitted 9 August, 2023;
originally announced August 2023.
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MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors
Authors:
Seunguk Song,
Kwan-Ho Kim,
Srikrishna Chakravarthi,
Zirun Han,
Gwangwoo Kim,
Kyung Yeol Ma,
Hyeon Suk Shin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characte…
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Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).
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Submitted 31 July, 2023;
originally announced August 2023.
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Topological design and synthesis of high-spin aza-triangulenes without Jahn-Teller distortions
Authors:
James Lawrence,
Yuanyuan He,
Haipeng Wei,
Jie Su,
Shaotang Song,
Alina Wania Rodrigues,
Daniel Miravet,
Pawel Hawrylak,
Jianwei Zhao,
Jishan Wu,
Jiong Lu
Abstract:
The atomic doping of open-shell nanographenes enables the precise tuning of their electronic and magnetic state, which is crucial for their promising potential applications in optoelectronics and spintronics. Among this intriguing class of molecules, triangulenes stand out with their size-dependent electronic properties and spin states, which can also be influenced by the presence of dopant atoms…
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The atomic doping of open-shell nanographenes enables the precise tuning of their electronic and magnetic state, which is crucial for their promising potential applications in optoelectronics and spintronics. Among this intriguing class of molecules, triangulenes stand out with their size-dependent electronic properties and spin states, which can also be influenced by the presence of dopant atoms and functional groups. However, the occurrence of Jahn-Teller distortions in such systems can have a crucial impact on their total spin and requires further theoretical and experimental investigation. In this study, we examine the nitrogen-doped aza-triangulene series via a combination of density functional theory and on-surface synthesis. We identify a general trend in the calculated spin states of aza-[n]triangulenes of various sizes, separating them into two symmetry classes, one of which features molecules that are predicted to undergo Jahn-Teller distortions that reduce their symmetry and thus their total spin. We link this behavior to the location of the central nitrogen atom relative to the two underlying carbon sublattices of the molecules. Consequently, our findings reveal that centrally-doped aza-triangulenes have one less radical than their undoped counterparts, irrespective of their predicted symmetry. We follow this by demonstrating the on-surface synthesis of π-extended aza-[5]triangulene, a large member of the higher symmetry class without Jahn-Teller distortions, via a simple one-step annealing process on Cu(111) and Au(111). Using scanning probe microscopy and spectroscopy combined with theoretical calculations, we prove that the molecule is positively charged on the Au(111) substrate, with a high-spin quintet state of S = 2, the same total spin as undoped neutral [5]triangulene.
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Submitted 22 September, 2023; v1 submitted 3 July, 2023;
originally announced July 2023.
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Organic molecules as origin of visible-range single photon emission from hexagonal boron nitride and mica
Authors:
Michael Neumann,
Xu Wei,
Luis Morales-Inostroza,
Seunghyun Song,
Sung-Gyu Lee,
Kenji Watanabe,
Takashi Taniguchi,
Stephan Götzinger,
Young Hee Lee
Abstract:
The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candi…
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The discovery of room-temperature single-photon emitters (SPEs) hosted by two-dimensional hexagonal boron nitride (2D hBN) has sparked intense research interest. Although emitters in the vicinity of 2 eV have been studied extensively, their microscopic identity has remained elusive. The discussion of this class of SPEs has centered on point defects in the hBN crystal lattice, but none of the candidate defect structures have been able to capture the great heterogeneity in emitter properties that is observed experimentally. Employing a widely used sample preparation protocol but disentangling several confounding factors, we demonstrate conclusively that heterogeneous single-photon emission ~2 eV associated with hBN originates from organic molecules, presumably aromatic fluorophores. The appearance of those SPEs depends critically on the presence of organic processing residues during sample preparation, and emitters formed during heat treatment are not located within the hBN crystal as previously thought, but at the hBN/substrate interface. We further demonstrate that the same class of SPEs can be observed in a different 2D insulator, fluorophlogopite mica.
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Submitted 21 June, 2023;
originally announced June 2023.
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Tailoring Exciton Dynamics in TMDC Heterobilayers in the Quantum Plasmonic Regime
Authors:
Mahfujur Rahaman,
Gwangwoo Kim,
Kyung Yeol Ma,
Seunguk Song,
Hyeon Suk Shin,
Deep Jariwala
Abstract:
Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in wh…
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Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime.
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Submitted 9 June, 2023;
originally announced June 2023.
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Synthesis and physical properties of Ce$_2$Rh$_{3+δ}$Sb$_4$ single crystals
Authors:
Kangqiao Cheng,
Shuo Zou,
Huanpeng Bu,
Jiawen Zhang,
Shijie Song,
Hanjie Guo,
Huiqiu Yuan,
Yongkang Luo
Abstract:
Millimeter-sized Ce$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) single crystals were synthesized by a Bi-flux method and their physical properties were studied by a combination of electrical transport, magnetic and thermodynamic measurements. The resistivity anisotropy $ρ_{a,b}/ρ_{c}\sim2$, manifesting a quasi-one-dimensional electronic character. Magnetic susceptibility measurements confirm…
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Millimeter-sized Ce$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) single crystals were synthesized by a Bi-flux method and their physical properties were studied by a combination of electrical transport, magnetic and thermodynamic measurements. The resistivity anisotropy $ρ_{a,b}/ρ_{c}\sim2$, manifesting a quasi-one-dimensional electronic character. Magnetic susceptibility measurements confirm $\mathbf{ab}$ as the magnetic easy plane. A long-range antiferromagnetic transition occurs at $T_N=1.4$ K, while clear short-range ordering can be detected well above $T_N$. The low ordering temperature is ascribed to the large Ce-Ce distance as well as the geometric frustration. Kondo scale is estimated to be about 2.4 K, comparable to the strength of magnetic exchange. Ce$_2$Rh$_{3+δ}$Sb$_4$, therefore, represents a rare example of dense Kondo lattice whose Ruderman-Kittel-Kasuya-Yosida exchange and Kondo coupling are both weak but competing.
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Submitted 16 August, 2023; v1 submitted 15 May, 2023;
originally announced May 2023.
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Highly-Entangled Polyradical Nanographene with Coexisting Strong Correlation and Topological Frustration
Authors:
Shaotang Song,
Andrés Pinar Solé,
Adam Matěj,
Guangwu Li,
Oleksandr Stetsovych,
Diego Soler,
Huimin Yang,
Mykola Telychko,
Jing Li,
Manish Kumar,
Jiri Brabec,
Libor Veis,
Jishan Wu,
Pavel Jelinek,
Jiong Lu
Abstract:
Open-shell benzenoid polycyclic aromatic hydrocarbons, known as magnetic nanographenes, exhibit unconventional p-magnetism arising from topological frustration or strong electronic-electron (e-e) interaction. Imprinting multiple strongly entangled spins into polyradical nanographenes creates a major paradigm shift in realizing non-trivial collective quantum behaviors and exotic quantum phases in o…
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Open-shell benzenoid polycyclic aromatic hydrocarbons, known as magnetic nanographenes, exhibit unconventional p-magnetism arising from topological frustration or strong electronic-electron (e-e) interaction. Imprinting multiple strongly entangled spins into polyradical nanographenes creates a major paradigm shift in realizing non-trivial collective quantum behaviors and exotic quantum phases in organic quantum materials. However, conventional design approaches are limited by a single magnetic origin, which can restrict the number of correlated spins or the type of magnetic ordering in open-shell nanographenes. Here, we present a novel design strategy combing topological frustration and e-e interactions to fabricate the largest fully-fused open-shell nanographene reported to date, a 'butterfly'-shaped tetraradical on Au(111). We employed bond-resolved scanning tunneling microscopy and spin excitation spectroscopy to unambiguously resolve the molecular backbone and reveal the strongly correlated open-shell character, respectively. This nanographene contains four unpaired electrons with both ferromagnetic and anti-ferromagnetic interactions, harboring a many-body singlet ground state and strong multi-spin entanglement, which can be well described by many-body calculations. Furthermore, we demonstrate that the nickelocene magnetic probe can sense highly-correlated spin states in nanographene. The ability to imprint and characterize many-body strongly correlated spins in polyradical nanographenes not only presents exciting opportunities for realizing non-trivial quantum magnetism and phases in organic materials but also paves the way toward high-density ultrafast spintronic devices and quantum information technologies.
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Submitted 4 April, 2023;
originally announced April 2023.
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Atomic scale imaging of sign-changing order parameter in superconducting FeSe with Tunneling Andreev Reflection
Authors:
Wonhee Ko,
Sang Yong Song,
Jiaqiang Yan,
Jose L. Lado,
Petro Maksymovych
Abstract:
The pairing symmetry of the superconducting order parameter in iron-based superconductors has been a subject of debate, with various models proposing s-wave, d-wave, and mixed combinations as possible candidates. Here we probe the pairing symmetry of FeSe utilizing the new methodology of Tunneling Andreev Reflection (TAR). TAR directly exploits the transparency-dependence of tunneling current to d…
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The pairing symmetry of the superconducting order parameter in iron-based superconductors has been a subject of debate, with various models proposing s-wave, d-wave, and mixed combinations as possible candidates. Here we probe the pairing symmetry of FeSe utilizing the new methodology of Tunneling Andreev Reflection (TAR). TAR directly exploits the transparency-dependence of tunneling current to disentangle contributions of single-particle current and Andreev reflection. These measurements provided new direct evidence in favor of the sign-changing nature of the superconducting order in FeSe, in a distinctly complementary approach to nanoscale imaging of quasiparticle interference. Crucially TAR can also probe higher-order contributions to Andreev reflection. Quantitative comparison of the experimental signatures of higher-order Andreev reflections with those in concomitant tight-binding simulations revealed new evidence in support of the nodal gap structure of superconductivity in FeSe. Finally, the effect of structural topological defects can be directly probed with TAR owing to its atomic spatial resolution. In particular, we find that superconductivity is completely suppressed along the twin boundary while its electronic structure is characterized by a V-shaped signature of a pseudogap state. Our findings provide new insight into the pairing symmetry of an unconventional superconductor, demonstrating the potential of differential tunneling Andreev reflection to reveal microscopic properties of emerging quantum materials.
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Submitted 9 March, 2023;
originally announced March 2023.
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Wafer-scale growth of two-dimensional, phase-pure InSe
Authors:
Seunguk Song,
Sungho Jeon,
Mahfujur Rahaman,
Jason Lynch,
Pawan Kumar,
Srikrishna Chakravarthi,
Gwangwoo Kim,
Xingyu Du,
Eric Blanton,
Kim Kisslinger,
Michael Snure,
Nicholas R. Glavin,
Eric A. Stach,
Roy H. Olsson,
Deep Jariwala
Abstract:
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the d…
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Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes.
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Submitted 4 March, 2023;
originally announced March 2023.
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Effect of carbon doping on the structure and superconductivity in AlB$_{2}$-type (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$
Authors:
Wuzhang Yang,
Guorui Xiao,
Qinqing Zhu,
Shijie Song,
Guang-Han Cao,
Zhi Ren
Abstract:
We report the effect of carbon doping in Ti-stabilized nonstoichiometric molybdenum diboride (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, which exhibits bulk superconductivity below $T_{\rm c}$ = 7.0 K. It is found that (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$(B$_{1-x}$C$_{x}$)$_{2}$ maintains the AlB$_{2}$-type phase with a uniform elemental distribution for $x$ = 0.12 and 0.16. The substitution of carbon fo…
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We report the effect of carbon doping in Ti-stabilized nonstoichiometric molybdenum diboride (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, which exhibits bulk superconductivity below $T_{\rm c}$ = 7.0 K. It is found that (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$(B$_{1-x}$C$_{x}$)$_{2}$ maintains the AlB$_{2}$-type phase with a uniform elemental distribution for $x$ = 0.12 and 0.16. The substitution of carbon for boron leads to a slight increase in $a$-axis, a remarkable reduction in $c$-axis, the formation of planar defects along the (100) crystallographic planes, and a shift of the B 1$s$ peaks towards higher binding energies. Contrary to (Mo$_{0.96}$Ti$_{0.04}$)$_{0.8}$B$_{2}$, however, no superconductivity is observed down to 1.8 K for the C-doped samples, which is ascribed to the electron filling of boron $π$ bands resulting from the carbon doping.
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Submitted 27 February, 2023;
originally announced February 2023.
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Superconductivity with large upper critical field in noncentrosymmetric Cr-bearing high-entropy alloys
Authors:
Guorui Xiao,
Wuzhang Yang,
Qinqing Zhu,
Shijie Song,
Guang-han Cao,
Zhi Ren
Abstract:
A series of new Cr$_{5+x}$Mo$_{35-x}$W$_{12}$Re$_{35}$Ru$_{13}$C$_{20}$ high-entropy alloys (HEAs) have been synthesized and characterized by x-ray diffraction, scanning electron microscopy, electrical resistivity, magnetic susceptibility and specific heat measurements. It is found that the HEAs adopt a noncentrosymmetric cubic $β$-Mn type structure and exhibit bulk superconductivity for 0 $\leq$…
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A series of new Cr$_{5+x}$Mo$_{35-x}$W$_{12}$Re$_{35}$Ru$_{13}$C$_{20}$ high-entropy alloys (HEAs) have been synthesized and characterized by x-ray diffraction, scanning electron microscopy, electrical resistivity, magnetic susceptibility and specific heat measurements. It is found that the HEAs adopt a noncentrosymmetric cubic $β$-Mn type structure and exhibit bulk superconductivity for 0 $\leq$ $x$ $\leq$ 9. With increasing $x$, the cubic lattice parameter decreases from 6.7940(3) Å to 6.7516(3) Å. Meanwhile, the superconducting transition temperature $T_{\rm c}$ is suppressed from 5.49 K to 3.35 K due to the magnetic pair breaking caused by Cr moments. For all these noncentrosymmetric HEAs, the zero-temperature upper critical field $B_{\rm c2}$(0) is comparable to Pauli paramagnetic limit $B_{\rm P}$(0) = 1.86$T_{\rm c}$. In particular, the $B_{\rm c2}$(0)/$B_{\rm P}$(0) ratio reaches a maximum of $\sim$1.03 at $x$ = 6, which is among the highest for $β$-Mn type superconductors.
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Submitted 12 February, 2023;
originally announced February 2023.
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Mo$_{3}$ReRuC: A noncentrosymmetric superconductor formed in the MoReRu-Mo$_{2}$C system
Authors:
Qinqing Zhu,
Guorui Xiao,
Wuzhang Yang,
Shijie Song,
Guang-Han Cao,
Zhi Ren
Abstract:
A quaternary compound with the composition Mo$_{3}$ReRuC is obtained in a previously unexplored MoReRu-Mo$_{2}$C system. According to x-ray structural analysis, Mo$_{3}$ReRuC crystallizes in the noncentrosymmetric space group $P$4$_{1}$32 (cubic $β$-Mn type structure, $a$ = 6.8107(1) Å). Below 7.7 K, Mo$_{3}$ReRuC becomes a bulk type-II superconductor with an upper critical field close to the Paul…
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A quaternary compound with the composition Mo$_{3}$ReRuC is obtained in a previously unexplored MoReRu-Mo$_{2}$C system. According to x-ray structural analysis, Mo$_{3}$ReRuC crystallizes in the noncentrosymmetric space group $P$4$_{1}$32 (cubic $β$-Mn type structure, $a$ = 6.8107(1) Å). Below 7.7 K, Mo$_{3}$ReRuC becomes a bulk type-II superconductor with an upper critical field close to the Pauli paramagnetic limit. The specific heat data gives a large normalized jump $Δ$$C_{\rm p}$/$γ$$T_{\rm c}$ = 2.3 at $T_{\rm c}$, which points to a strongly coupled superconducting state. First principles calculations show that its electronic states at the Fermi level are mainly contributed by Mo, Re and Ru atoms and strongly increased by the spin-orbit coupling. Our finding suggests that the intermediate phase between alloys and carbides may be a good place to look for $β$-Mn type noncentrosymmetric superconductors.
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Submitted 8 February, 2023;
originally announced February 2023.