Showing 1–1 of 1 results for author: Son, G v
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Combined electrical transport and capacitance spectroscopy of a ${\mathrm{MoS_2-LiNbO_3}}$ field effect transistor
Authors:
W. Michailow,
F. J. R. Schülein,
B. Möller,
E. Preciado,
A. E. Nguyen,
G. v. Son,
J. Mann,
A. L. Hörner,
A. Wixforth,
L. Bartels,
H. J. Krenner
Abstract:
We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. Th…
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We have measured both the current-voltage ($I_\mathrm{SD}$-$V_\mathrm{GS}$) and capacitance-voltage ($C$-$V_\mathrm{GS}$) characteristics of a $\mathrm{MoS_2-LiNbO_3}$ field effect transistor. From the measured capacitance we calculate the electron surface density and show that its gate voltage dependence follows the theoretical prediction resulting from the two-dimensional free electron model. This model allows us to fit the measured $I_\mathrm{SD}$-$V_\mathrm{GS}$ characteristics over the \emph{entire range} of $V_\mathrm{GS}$. Combining this experimental result with the measured current-voltage characteristics, we determine the field effect mobility as a function of gate voltage. We show that for our device this improved combined approach yields significantly smaller values (more than a factor of 4) of the electron mobility than the conventional analysis of the current-voltage characteristics only.
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Submitted 2 January, 2017;
originally announced January 2017.
