Showing 1–2 of 2 results for author: Sometani, M
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Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements
Authors:
Tetsuo Hatakeyama,
Yuji Kiuchi,
Mitsuru Sometani,
Shinsuke Harada,
Dai Okamoto,
Hiroshi Yano,
Yoshiyuki Yonezawa,
Hajime Okumura
Abstract:
The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as wel…
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The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces near the conduction band edge were qualitatively examined by a simple, newly developed characterization method that utilizes Hall effect measurements and split capacitance-voltage measurements. The results showed a significant reduction in the density of interface traps near the conduction band edge by nitridation, as well as the high density of interface traps that was not eliminated by nitridation.
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Submitted 1 March, 2017;
originally announced March 2017.
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Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy
Authors:
Tetsuo Hatakeyama,
Mitsuru Sometani,
Yoshiyuki Yonezawa,
Kenji Fukuda,
Hajime Okumura,
Tsunenobu Kimoto
Abstract:
The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the low-mobility interfaces oxidized in a N$_2$O atmosphere with those of the high-mobility interfaces on C-face oxidized in a wet atmosphere, it was found that a high den…
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The effects of the oxidation atmosphere and crystal faces on the interface-trap density was examined by using constant-capacitance deep-level transient spectroscopy to clarify the origin of them. By comparing the DLTS spectra of the low-mobility interfaces oxidized in a N$_2$O atmosphere with those of the high-mobility interfaces on C-face oxidized in a wet atmosphere, it was found that a high density of traps are commonly observed around the energy of 0.16 eV from the edge of the conduction band ($C1$ traps) in low-mobility interfaces irrespective of crystal faces. It was also found that the generation and elimination of traps specific to crystal faces: (1) the $C1$ traps can be eliminated by wet oxidation only on the C-face, and (2) the $O2$ traps (0.37 eV) can be observed in the SiC/SiO$_2$ interface only on the Si-face. The generation of $O2$ traps on the Si-face and the elimination of $C1$ traps on the C-face by wet oxidation may be caused by the oxidation reaction specific to the crystal faces.
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Submitted 25 September, 2014;
originally announced September 2014.
