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Electrically tuned hyperfine spectrum in neutral Tb(II)(Cp$^{\rm{iPr5}}$)$_2$ single-molecule magnet
Authors:
Robert L. Smith,
Aleksander L. Wysocki,
Kyungwha Park
Abstract:
Molecular spin qubits with long spin coherence time as well as non-invasive operation methods on such qubits are in high demand. It was shown that both molecular electronic and nuclear spin levels can be used as qubits. In solid state systems with dopants, an electric field was shown to effectively change the spacing between the nuclear spin qubit levels when the electron spin density is high at t…
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Molecular spin qubits with long spin coherence time as well as non-invasive operation methods on such qubits are in high demand. It was shown that both molecular electronic and nuclear spin levels can be used as qubits. In solid state systems with dopants, an electric field was shown to effectively change the spacing between the nuclear spin qubit levels when the electron spin density is high at the nucleus of the dopant. Inspired by such solid-state systems, we propose that divalent lanthanide (Ln) complexes with an unusual electronic configuration of Ln$^{2+}$ have a strong interaction between the Ln nuclear spin and the electronic degrees of freedom, which renders electrical tuning of the interaction. As an example, we study electronic structure and hyperfine interaction of the $^{159}$Tb nucleus in a neutral Tb(II)(Cp$^{\rm{iPr5}}$)$_2$ single-molecule magnet (SMM) using the complete active space self-consistent field method with spin-orbit interaction included within the restricted active space state interaction. Our calculations show that the low-energy states arise from $4f^8(6s,5d_{z^2})^1$, 4$f^8$(5$d_{x^2-y^2}$)$^1$, and $4f^8(5d_{xy})^1$ configurations. We compute the hyperfine interaction parameters and the electronic-nuclear spectrum within our multiconfigurational approach. We find that the hyperfine interaction is about one order of magnitude greater than that for Tb(III)Pc$_2$ SMMs. This stems from the strong Fermi contact interaction between the Tb nuclear spin and the electron spin density at the nucleus that originates from the occupation of the $(6s,5d)$ orbitals. We also uncover that the response of the Fermi contact term to electric field results in electrical tuning of the electronic-nuclear level separations. This hyperfine Stark effect may be useful for applications of molecular nuclear spins for quantum computing.
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Submitted 30 July, 2020;
originally announced July 2020.
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Alane adsorption and dissociation on the Si(001) surface
Authors:
Richard L. Smith,
David R. Bowler
Abstract:
We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, sig…
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We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We calculated the energies of various structures along the pathway of successive dehydrogenation events following adsorption: AlH2, AlH and Al, finding a gradual, significant decrease in energy. For each stage, we analyse the structure and bonding, and present simulated STM images of the lowest energy structures. Finally, we find that the energy of Al atoms incorporated into the surface, ejecting a Si atom, is comparable to Al adatoms. These findings show that Al incorporation is likely to be as precisely controlled as P incorporation, if slightly less easy to achieve.
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Submitted 21 April, 2017; v1 submitted 20 April, 2017;
originally announced April 2017.
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Infrared properties of micromachined vanadium oxide thin films
Authors:
Martin Rees,
Haifei Wang,
Thomas Decker,
Robinson L. Smith
Abstract:
This paper discusses questions of synthesizing and pressing vanadium oxides to create film-forming materials that can be used in producing optical coatings. Based on the film-forming materials thus created, technological processes have been developed for fabricating coatings from vanadium dioxide by two methods of producing thin films: vacuum evaporation and magnetron sputtering. Questions of usin…
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This paper discusses questions of synthesizing and pressing vanadium oxides to create film-forming materials that can be used in producing optical coatings. Based on the film-forming materials thus created, technological processes have been developed for fabricating coatings from vanadium dioxide by two methods of producing thin films: vacuum evaporation and magnetron sputtering. Questions of using films made from vanadium oxide in optical instrumentation are considered.
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Submitted 28 February, 2017;
originally announced March 2017.
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Bolometric arrays and infrared sensitivity of VO2 films with varying stoichiometry
Authors:
Y. Hu,
C. H. Lin,
S. Min,
R. L. Smith,
S. Roberts
Abstract:
Here we propose a linear microbolometric array based on VOx thin films. The linear microbolometric array is fabricated by using micromachining technology, and its thermo-sensitive VOx thin film has excellent infrared response spectrum and TCR characteristics. Nano-scale VOx thin films deposited on SiO2/Si substrates were obtained by e-beam vapor deposition. The VOx films were then annealed at temp…
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Here we propose a linear microbolometric array based on VOx thin films. The linear microbolometric array is fabricated by using micromachining technology, and its thermo-sensitive VOx thin film has excellent infrared response spectrum and TCR characteristics. Nano-scale VOx thin films deposited on SiO2/Si substrates were obtained by e-beam vapor deposition. The VOx films were then annealed at temperatures between 300 to 500 C with various deposition duration time. The crystal structures and microstructures were examined by XRD, SEM and ESCA. These films showed a predominant phase of rhombohedral VO2 and the crystallinity of the VO2 increased as the annealing temperature increased. Integrated with CMOS circuit, an experimentally prototypical monolithic linear microbolometric array is designed and fabricated. The testing results of the experimental linear array show that the responsivity of linear array can approach 18KV/W and is potential for infrared image systems.
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Submitted 16 February, 2017;
originally announced February 2017.
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Nanoscale force sensor and actuator with carbon-nanotube network
Authors:
Zhiping Zhang,
Li Huang,
Haifei Wang,
Tracy Bay,
Robinson L. Smith
Abstract:
Actuators at the nanoscale are assuming great important in todays shrinking electronics industry where a system-on-chip approach is used to integrate multi-functional systems and devices. Integration of sensors, actuators, information processing, and storage have become extremely important, more so at the sub-micrometer scale. Here we utilized vertically aligned carbon nanotube forests bonded onto…
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Actuators at the nanoscale are assuming great important in todays shrinking electronics industry where a system-on-chip approach is used to integrate multi-functional systems and devices. Integration of sensors, actuators, information processing, and storage have become extremely important, more so at the sub-micrometer scale. Here we utilized vertically aligned carbon nanotube forests bonded onto a piezoelectric substrate to provide sensing of nanoscale forces and actuation on the same platform. This is a demonstration of integration of two important functions using the functionality of nanomaterials. This has immediate utility in many areas including outer space exploration, portable consumer electronics, embedded systems, etc.
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Submitted 11 October, 2016; v1 submitted 3 September, 2016;
originally announced September 2016.
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Resonant optical gating of suspended carbon nanotube transistor
Authors:
Robert McCoy,
Fredrick Anderson,
Eric L. Carter,
Robinson L. Smith
Abstract:
Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube (CNT) using feedback-enabled radiation pressure of a near-field focused laser that enabled significant changes in conductivity of the CNT. Further, using in-situ…
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Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube (CNT) using feedback-enabled radiation pressure of a near-field focused laser that enabled significant changes in conductivity of the CNT. Further, using in-situ tip-enhanced Raman spectroscopy, we show that the change in conductivity of over five orders in magnitude is accompanied by self-induced defect states within the CNT. The entire structure is less than 10 nm in dimension and shows promise of scalability. This is a novel method for achieving logic operations at the nanoscale.
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Submitted 9 July, 2016;
originally announced July 2016.
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Pressure sensing using vertically aligned carbon nanotubes on a flexible substrate
Authors:
E. L. Carter,
P. Brown,
R. L. Smith,
J. Griffin
Abstract:
Sensing technologies have been under research and development for their varied applications from microelectronics to space exploration. With the end of Moores law in sight, there is growing demand for shrinking materials and improving sensitivity and range of sensing of sensors. Carbon nanotubes (CNTs) offer an excellent combination of small size (in the order of nanometers in two dimensions and m…
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Sensing technologies have been under research and development for their varied applications from microelectronics to space exploration. With the end of Moores law in sight, there is growing demand for shrinking materials and improving sensitivity and range of sensing of sensors. Carbon nanotubes (CNTs) offer an excellent combination of small size (in the order of nanometers in two dimensions and micrometers in the third dimension), varied current conductivity (from insulating to metallic), flexibility, mechanical strength and feasibility of mass production. Here we used CNTs to fabricate pressure sensors to sense static loads of pressure and studied the characteristics of different methods of building the sensors. We offer an adhesive-absorption technique of fabrication of pressure sensors that tackles the issue of endurance of the sensors to repeated operation. We demonstrate a significant change in resistance of a vertically aligned forest of nanotubes upon application of static loads. This study will enable building of better pressure sensors for several applications.
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Submitted 10 June, 2016;
originally announced June 2016.
