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First-Principles Calculation of Superconducting $T_c$ in Superhard B-C-N Metals
Authors:
Adam D. Smith,
Yogesh K. Vohra,
Cheng-Chien Chen
Abstract:
We perform first-principles electron-phonon calculations to evaluate the superconducting transition temperature $T_c$ for ternary superhard metals B$_2$C$_3$N and B$_4$C$_5$N$_3$. These materials are predicted to exhibit a wide distribution of electron-phonon coupling parameters on their multiple Fermi surface sheets, which necessitates solving the anisotropic Eliashberg equations for accurate det…
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We perform first-principles electron-phonon calculations to evaluate the superconducting transition temperature $T_c$ for ternary superhard metals B$_2$C$_3$N and B$_4$C$_5$N$_3$. These materials are predicted to exhibit a wide distribution of electron-phonon coupling parameters on their multiple Fermi surface sheets, which necessitates solving the anisotropic Eliashberg equations for accurate determination of $T_c$. An ambient-pressure $T_c$ of $\sim 40$ K and $\sim 20$ K is obtained respectively for B$_2$C$_3$N and B$_4$C$_5$N$_3$ from the anisotropic gap equations. The relatively high $T_c$ of these compounds is due in part to their high Debye temperatures associated with superhardness. The materials under study are potentially synthesizable, as their formation energies are comparable to those of other recently synthesized superhard B-C-N compounds. Therefore, studying superhard metals could hold the promise of realizing new higher-$T_c$ superconductors at ambient pressure.
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Submitted 2 October, 2024;
originally announced October 2024.
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Dynamical Approach to Realize Room-Temperature Superconductivity in LaH$_{10}$
Authors:
Chendi Xie,
Adam D. Smith,
Haoran Yan,
Wei-Chih Chen,
Yao Wang
Abstract:
Metallic hydrogen and hydride materials stand as promising avenues to achieve room-temperature superconductivity. Characterized by their high phonon frequencies and moderate coupling strengths, several high-pressure hydrides were theoretically predicted to exhibit transition temperatures ($T_c$) exceeding 250\,K, a claim further substantiated by experimental evidence. In an effort to push $T_c$ be…
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Metallic hydrogen and hydride materials stand as promising avenues to achieve room-temperature superconductivity. Characterized by their high phonon frequencies and moderate coupling strengths, several high-pressure hydrides were theoretically predicted to exhibit transition temperatures ($T_c$) exceeding 250\,K, a claim further substantiated by experimental evidence. In an effort to push $T_c$ beyond room temperature, we introduce a dynamical method that involves stimulating hydrides with mid-infrared lasers. Employing Floquet first-principles simulations, we observe that in a nonequilibrium state induced by light, both the electronic density of states and the coupling to high-energy phonons see notable enhancements. These simultaneous improvements collectively result in an estimated 20\%-30\% rise in $T_c$ in practical pump conditions. Our theoretical investigation, therefore, offers a novel strategy to potentially raise the $T_c$ of hydrides above room temperature.
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Submitted 19 December, 2023;
originally announced December 2023.
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Machine learning the relationship between Debye temperature and superconducting transition temperature
Authors:
Adam D. Smith,
Sumner B. Harris,
Renato P. Camata,
Da Yan,
Cheng-Chien Chen
Abstract:
Recently a relationship between the Debye temperature $Θ_D$ and the superconducting transition temperature $T_c$ of conventional superconductors has been proposed [npj Quantum Materials $\mathbf{3}$, 59 (2018)]. The relationship indicates that $T_c \le A Θ_D$ for phonon-mediated BCS superconductors, with $A$ being a pre-factor of order $\sim 0.1$. In order to verify this bound, we train machine le…
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Recently a relationship between the Debye temperature $Θ_D$ and the superconducting transition temperature $T_c$ of conventional superconductors has been proposed [npj Quantum Materials $\mathbf{3}$, 59 (2018)]. The relationship indicates that $T_c \le A Θ_D$ for phonon-mediated BCS superconductors, with $A$ being a pre-factor of order $\sim 0.1$. In order to verify this bound, we train machine learning (ML) models with 10,330 samples in the Materials Project database to predict $Θ_D$. By applying our ML models to 9,860 known superconductors in the NIMS SuperCon database, we find that the conventional superconductors in the database indeed follow the proposed bound. We also perform first-principles phonon calculations for H$_{3}$S and LaH$_{10}$ at 200 GPa. The calculation results indicate that these high-pressure hydrides essentially saturate the bound of $T_c$ versus $Θ_D$.
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Submitted 27 November, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
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Chemical vapor deposited graphene: From synthesis to applications
Authors:
Satender Kataria,
Stefan Wagner,
Jasper Ruhkopf,
Aamit Gahoi,
Himadri Pandey,
Rainer Bornemann,
Sam Vaziri,
Anderson D. Smith,
Mikael Östling,
Max C. Lemme
Abstract:
Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD…
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Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
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Submitted 27 March, 2021;
originally announced March 2021.
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Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers
Authors:
Xuge Fan,
Fredrik Forsberg,
Anderson D. Smith,
Stephan Schröder,
Stefan Wagner,
Mikael Östling,
Max C. Lemme,
Frank Niklaus
Abstract:
Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitati…
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Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully-clamped at their circumference and that have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents and are able to suspend larger silicon proof masses, as compared to the previously graphene ribbon devices. These findings are an important step towards bringing ultra-miniaturized piezoresistive graphene NEMS closer towards deployment in emerging applications such as in wearable electronics, biomedical implants and internet of things (IoT) devices.
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Submitted 16 March, 2020;
originally announced March 2020.
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Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications
Authors:
Xuge Fan,
Anderson D. Smith,
Fredrik Forsberg,
Stefan Wagner,
Stephan Schröder,
Sayedeh Shirin Afyouni Akbari,
Andreas C. Fischer,
Luis Guillermo Villanueva,
Mikael Östling,
Max C. Lemme,
Frank Niklaus
Abstract:
Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological…
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Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes in micro- and nanoelectromechanical systems (MEMS and NEMS). However, the integration of graphene into MEMS or NEMS devices and suspended structures such as proof masses on graphene membranes raises several technological challenges, including collapse and rupture of the graphene. We have developed a robust route for realizing membranes made of double-layer CVD graphene and suspending large silicon proof masses on membranes with high yields. We have demonstrated the manufacture of square graphene membranes with side lengths from 7 micro meter to 110 micro meter and suspended proof masses consisting of solid silicon cubes that are from 5 micro meter multiply 5 micro meter multiply 16.4 micro meter to 100 micro meter multiply 100 micro meter multiply 16.4 micro meter in size. Our approach is compatible with wafer-scale MEMS and semiconductor manufacturing technologies, and the manufacturing yields of the graphene membranes with suspended proof masses were greater than 90%, with more than 70% of the graphene membranes having more than 90% graphene area without visible defects. The graphene membranes with suspended proof masses were extremely robust and were able to withstand indentation forces from an atomic force microscope (AFM) tip of up to ~7000 nN. The measured resonance frequencies of the realized structures ranged from tens to hundreds of kHz, with quality factors ranging from 63 to 148. The proposed approach for the reliable and large-scale manufacture of graphene membranes with suspended proof masses will enable the development and study of innovative NEMS devices with new functionalities and improved performances.
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Submitted 16 March, 2020;
originally announced March 2020.
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Study of phonons in irradiated epitaxial thin films of UO$_2$
Authors:
S. Rennie,
E. Lawrence Bright,
J. E. Darnbrough,
L. Paolasini,
A. Bosak,
A. D. Smith,
N. Mason,
G. H. Lander,
R. Springell
Abstract:
We report experiments to determine the effect of radiation damage on the phonon spectra of the most common nuclear fuel, UO$_2$. We have irradiated thin ($\sim$ 300 nm) epitaxial films of UO$_2$ with 2.1 MeV He$^{2+}$ ions to 0.15 dpa and a lattice swelling of $Δ$a/a $\sim$ 0.6 %, and then used grazing-incidence inelastic X-ray scattering to measure the phonon spectrum. We succeeded to observe the…
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We report experiments to determine the effect of radiation damage on the phonon spectra of the most common nuclear fuel, UO$_2$. We have irradiated thin ($\sim$ 300 nm) epitaxial films of UO$_2$ with 2.1 MeV He$^{2+}$ ions to 0.15 dpa and a lattice swelling of $Δ$a/a $\sim$ 0.6 %, and then used grazing-incidence inelastic X-ray scattering to measure the phonon spectrum. We succeeded to observe the acoustic modes, both transverse and longitudinal, across the Brillouin zone. The phonon energies, in both the pristine and irradiated samples, are unchanged from those observed in bulk material. On the other hand, the phonon linewidths (inversely proportional to the phonon lifetimes), show a significant broadening when comparing the pristine and irradiated samples. This effect is shown to increase with phonon energy across the Brillouin zone. The decreases in the phonon lifetimes of the acoustic modes are roughly consistent with a 50 % reduction in the thermal conductivity.
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Submitted 23 February, 2018;
originally announced February 2018.
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Multiple Topological Electronic Phases in Superconductor MoC
Authors:
Angus Huang,
Adam D. Smith,
Madison Schwinn,
Qiangsheng Lu,
Tay-Rong Chang,
Weiwei Xie,
Horng-Tay Jeng,
Guang Bian
Abstract:
The search for a superconductor with non-s-wave pairing is important not only for understanding unconventional mechanisms of superconductivity but also for finding new types of quasiparticles such as Majorana bound states. Materials with both topological band structure and superconductivity are promising candidates as $p+ip$ superconducting states can be generated through pairing the spin-polarize…
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The search for a superconductor with non-s-wave pairing is important not only for understanding unconventional mechanisms of superconductivity but also for finding new types of quasiparticles such as Majorana bound states. Materials with both topological band structure and superconductivity are promising candidates as $p+ip$ superconducting states can be generated through pairing the spin-polarized topological surface states. In this work, the electronic and phonon properties of the superconductor molybdenum carbide (MoC) are studied with first-principles methods. Our calculations show that nontrivial band topology and superconductivity coexist in both structural phases of MoC, namely, the cubic $α$ and hexagonal $γ$ phases. The $α$ phase is a strong topological insulator and the $γ$ phase is a topological nodal line semimetal with drumhead surface states. In addition, hole doping can stabilize the crystal structure of the $α$ phase and elevate the transition temperature in the $γ$ phase. Therefore, MoC in different structural forms can be a practical material platform for studying topological superconductivity and elusive Majorana fermions.
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Submitted 24 September, 2017;
originally announced September 2017.
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Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors
Authors:
Anderson D. Smith,
Frank Niklaus,
Alan Paussa,
Stephan Schröder,
Andreas C. Fischer,
Mikael Sterner,
Stefan Wagner,
Sam Vaziri,
Fredrik Forsberg,
David Esseni,
Mikael Östling,
Max C. Lemme
Abstract:
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive press…
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Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive pressure sensors. A detailed model that utilizes a linearized Boltzman transport equation describes accurately the charge carrier density and mobility in strained graphene, and hence the gauge factor. The gauge factor is found to be practically independent of the doping concentration and crystallographic orientation of the graphene films. These investigations provide deeper insight into the piezoresistive behavior of graphene membranes.
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Submitted 13 August, 2017;
originally announced August 2017.
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Non-invasive Scanning Raman Spectroscopy and Tomography for Graphene Membrane Characterization
Authors:
Stefan Wagner,
Thomas Dieing,
Alba Centeno,
Amaia Zurutuza,
Anderson D. Smith,
Mikael Östling,
Satender Kataria,
Max C. Lemme
Abstract:
Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale charact…
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Graphene has extraordinary mechanical and electronic properties, making it a promising material for membrane based nanoelectromechanical systems (NEMS). Here, chemical-vapor-deposited graphene is transferred onto target substrates to suspend it over cavities and trenches for pressure-sensor applications. The development of such devices requires suitable metrology methods, i.e., large-scale characterization techniques, to confirm and analyze successful graphene transfer with intact suspended graphene membranes. We propose fast and noninvasive Raman spectroscopy mapping to distinguish between freestanding and substrate-supported graphene, utilizing the different strain and doping levels. The technique is expanded to combine two-dimensional area scans with cross-sectional Raman spectroscopy, resulting in three-dimensional Raman tomography of membrane-based graphene NEMS. The potential of Raman tomography for in-line monitoring is further demonstrated with a methodology for automated data analysis to spatially resolve the material composition in micrometer-scale integrated devices, including free-standing and substrate-supported graphene. Raman tomography may be applied to devices composed of other two-dimensional materials as well as silicon micro- and nanoelectromechanical systems.
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Submitted 24 February, 2017;
originally announced February 2017.
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Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout
Authors:
Anderson David Smith,
Karim Elgammal,
Frank Niklaus,
Anna Delin,
Andreas Fischer,
Sam Vaziri,
Fredrik Forsberg,
Mikael Råsander,
Håkan W. Hugosson,
Lars Bergqvist,
Stephan Schröder,
Satender Kataria,
Mikael Östling,
Max C. Lemme
Abstract:
We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order…
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We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. Results from the interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate, which in turn leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical read out and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.
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Submitted 25 October, 2015;
originally announced October 2015.
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Going Ballistic: Graphene Hot Electron Transistors
Authors:
Sam Vaziri,
Anderson D. Smith,
Mikael Östling,
Grzegorz Lupina,
Jarek Dabrowski,
Gunther Lippert,
Francesco Driussi,
Stefano Venica,
Valerio Di Lecce,
Antonio Gnudi,
Matthias König,
Günther Ruhl,
Melkamu Belete,
Max C. Lemme
Abstract:
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly d…
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This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
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Submitted 3 September, 2015;
originally announced September 2015.
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Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
Authors:
A. D. Smith,
F. Niklaus,
A. Paussa,
S. Vaziri,
A. C. Fischer,
M. Sterner,
F. Forsberg,
A. Delin,
D. Esseni,
P. Palestri,
M. Östling,
M. C. Lemme
Abstract:
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nano-electromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an importan…
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Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively demonstrate the piezoresistive effect in graphene in a nano-electromechanical membrane configuration that provides direct electrical readout of pressure to strain transduction. This makes it highly relevant for an important class of nano-electromechanical system (NEMS) transducers. This demonstration is consistent with our simulations and previously reported gauge factors and simulation values. The membrane in our experiment acts as a strain gauge independent of crystallographic orientation and allows for aggressive size scalability. When compared with conventional pressure sensors, the sensors have orders of magnitude higher sensitivity per unit area.
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Submitted 25 June, 2013;
originally announced June 2013.
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A Graphene-based Hot Electron Transistor
Authors:
Sam Vaziri,
Grzegorz Lupina,
Christoph Henkel,
Anderson D. Smith,
Mikael Östling,
Jarek Dabrowski,
Gunther Lippert,
Wolfgang Mehr,
Max C. Lemme
Abstract:
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. T…
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We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.
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Submitted 2 June, 2013; v1 submitted 13 November, 2012;
originally announced November 2012.
