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Mutual control of critical temperature, RRR, stress, and surface quality for sputtered Nb films
Authors:
E. V. Zikiy,
I. A. Stepanov,
S. V. Bukatin,
D. A. Baklykov,
M. I. Teleganov,
E. A. Krivko,
N. S. Smirnov,
I. A. Ryzhikov,
S. P. Bychkov,
S. A. Kotenkov,
N. D. Korshakov,
J. A. Agafonova,
I. A. Rodionov
Abstract:
Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical, electrical, and cryogenic properties of Nb thin films. In this work, we focus on the comprehensive relationship study between 200-nm Nb film characteristics and…
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Superconducting single quantum logic integrated circuits traditionally exploit magnetron sputtered niobium thin films on silicon oxide substrates. The sputtering depends on multiple process parameters, which dramatically affect mechanical, electrical, and cryogenic properties of Nb thin films. In this work, we focus on the comprehensive relationship study between 200-nm Nb film characteristics and their intrinsic stress. It is shown that there is a critical value of the working pressure pcritical at the fixed sputtering power above which stress in the film relaxes whereas the film properties degrade significantly. Below pcritical one can control intrinsic stress in the wide range from -400 MPa to +600 MPa maintaining perfect film surface with a 0.8 nm roughness (Rq), electrical resistivity less than 20 uOhm*cm, critical superconducting transition temperature above 8.9 K and residual resistance ratio over 6.4. We suggest a modified kinetic model to predict Nb films stress with the linear dependence of high-energy parameters on the working pressure replaced with an exponential one, which allowed reduction of the approximation error from 20 to 8%.
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Submitted 5 February, 2025;
originally announced February 2025.
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Lattice dynamics and mixing of polar phonons in the rare-earth orthoferrite TbFeO$_{3}$
Authors:
R. M. Dubrovin,
E. M. Roginskii,
V. A. Chernyshev,
N. N. Novikova,
M. A. Elistratova,
I. A. Eliseyev,
A. N. Smirnov,
A. I. Brulev,
K. N. Boldyrev,
V. Yu. Davydov,
R. V. Mikhaylovskiy,
A. M. Kalashnikova,
R. V. Pisarev
Abstract:
Rare-earth orthoferrites are a promising platform for antiferromagnetic spintronics with a rich variety of terahertz spin and lattice dynamics phenomena. For instance, it has been experimentally demonstrated that the light-driven optical phonons can coherently manipulate macroscopic magnetic states via nonlinear magnetophononic effects. Here using TbFeO$_{3}$ as an example, we reveal the origin of…
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Rare-earth orthoferrites are a promising platform for antiferromagnetic spintronics with a rich variety of terahertz spin and lattice dynamics phenomena. For instance, it has been experimentally demonstrated that the light-driven optical phonons can coherently manipulate macroscopic magnetic states via nonlinear magnetophononic effects. Here using TbFeO$_{3}$ as an example, we reveal the origin of the mode mixing between the LO and TO phonons, which is important for understanding of nonlinear phononics. We performed a comprehensive study of the lattice dynamics of the TbFeO$_{3}$ single crystal by polarized infrared and Raman scattering spectroscopic techniques, and experimentally obtained and carefully analyzed the spectra of anisotropic complex dielectric functions in the far-infrared spectral range. This allowed us to reliably identify the symmetries and parameters of most infrared- and Raman-active phonons. Next, the experimental studies were supplemented by the lattice dynamics calculations which allowed us to propose the normal mode assignments. We reveal that the relation between LO and TO polar phonons is complex and does not strictly follow the ``LO-TO rule'' due to the strong mode mixing. We further analyze how displacements of different ions contribute to phonon modes and reveal that magnetic Fe ions are not involved in Raman-active phonons, thus shedding light on a lack of spin phonon coupling for such phonons. The obtained results establish a solid basis for further in-depth experimental research in the field of nonlinear phononics and magnetophononics in rare-earth orthoferrites.
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Submitted 15 October, 2024;
originally announced October 2024.
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Angstrom-scale ion-beam engineering of ultrathin buried oxides for quantum and neuro-inspired computing
Authors:
N. Smirnov,
E. Krivko,
D. Moskaleva,
D. Moskalev,
A. Solovieva,
V. Echeistov,
E. Zikiy,
N. Korshakov,
A. Ivanov,
E. Malevannaya,
A. Matanin,
V. Polozov,
M. Teleganov,
N. Zhitkov,
R. Romashkin,
I. Korobenko,
A. Yanilkin,
A. Lebedev,
I. Ryzhikov,
A. Andriyash,
I. Rodionov
Abstract:
Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides e…
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Multilayer nanoscale systems incorporating buried ultrathin tunnel oxides, 2D materials, and solid electrolytes are crucial for next-generation logics, memory, quantum and neuro-inspired computing. Still, an ultrathin layer control at angstrom scale is challenging for cutting-edge applications. Here we introduce a scalable approach utilizing focused ion-beam annealing for buried ultrathin oxides engineering with angstrom-scale thickness control. Our molecular dynamics simulations of Ne+ irradiation on Al/a-AlOx/Al structure confirms the pivotal role of ion generated crystal defects. We experimentally demonstrate its performance on Josephson junction tunning in the resistance range of 2 to 37% with a standard deviation of 0.86% across 25x25 mm chip. Moreover, we showcase +-17 MHz frequency control (+-0.172 A tunnel barrier thickness) for superconducting transmon qubits with coherence times up to 500 us, which is promising for useful fault-tolerant quantum computing. This work ensures ultrathin multilayer nanosystems engineering at the ultimate scale by depth-controlled crystal defects generation.
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Submitted 21 August, 2024; v1 submitted 19 August, 2024;
originally announced August 2024.
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Wiring surface loss of a superconducting transmon qubit
Authors:
Nikita S. Smirnov,
Elizaveta A. Krivko,
Anastasiya A. Solovieva,
Anton I. Ivanov,
Ilya A. Rodionov
Abstract:
Quantum processors using superconducting qubits suffer from dielectric loss leading to noise and dissipation. Qubits are usually designed as large capacitor pads connected to a non-linear Josephson junction (or SQUID) by a superconducting thin metal wiring. Here, we report on finite-element simulation and experimental results confirming that more than 50% of surface loss in transmon qubits can ori…
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Quantum processors using superconducting qubits suffer from dielectric loss leading to noise and dissipation. Qubits are usually designed as large capacitor pads connected to a non-linear Josephson junction (or SQUID) by a superconducting thin metal wiring. Here, we report on finite-element simulation and experimental results confirming that more than 50% of surface loss in transmon qubits can originated from Josephson junctions wiring and can limit qubit relaxation time. Extracting dielectric loss tangents capacitor pads and wiring based on their participation ratios, we show dominant surface loss of wiring can occur for real qubits designs. Then, we simulate a qubit coupled to a bath of individual TLS defects and show that only a small fraction (~18%) of coupled defects is located within the wiring interfaces, however, their coupling strength is much higher due to stronger electromagnetic field. Finally, we fabricate six tunable floating transmon qubits and experimentally demonstrate up to 20% improvement in qubit quality factor by wiring design optimization.
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Submitted 28 November, 2023;
originally announced November 2023.
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Laser-induced Demagnetization in van der Waals $XY$- and Ising-like Antiferromagnets NiPS$_3$ and FePS$_3$
Authors:
D. V. Kuntu,
E. A. Arkhipova,
L. A. Shelukhin,
F. Mertens,
M. A. Prosnikov,
I. A. Eliseyev,
A. N. Smirnov,
V. Yu. Davydov,
S. Mañas-Valero,
E. Coronado,
M. Cinchetti,
A. M. Kalashnikova
Abstract:
The critical behaviour of laser-induced changes in magnetic ordering is studied experimentally in two-dimensional zigzag antiferromagnets $XY$-like NiPS$_3$ and Ising-like FePS$_3$. To examine laser-induced dynamics in flakes of these compounds, we employ time-resolved exchange linear dichroism effect sensitive to zigzag magnetic ordering and independent of the orientation of the antiferromagnetic…
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The critical behaviour of laser-induced changes in magnetic ordering is studied experimentally in two-dimensional zigzag antiferromagnets $XY$-like NiPS$_3$ and Ising-like FePS$_3$. To examine laser-induced dynamics in flakes of these compounds, we employ time-resolved exchange linear dichroism effect sensitive to zigzag magnetic ordering and independent of the orientation of the antiferromagnetic vector. In both compounds laser excitation in the vicinity of the absorption edge induces partial quenching of the antiferromagnetic ordering manifested by exchange linear dichroism reduction. The amplitude of the effect varies with temperature as the derivative of the antiferromagnetic vector and exhibits a critical behaviour with the exponents corresponding to $XY$- and Ising-models for NiPS$_3$ and FePS$_3$, respectively. Critical slowing down of the demagnetization in the vicinity of Néel temperature is found, however, only in FePS$_3$. In contrast, the increase of the demagnetization time near the ordering temperature in NiPS$_3$ is minor. We show that the difference in the demagnetization times correlates well with the spin specific heat in both compounds. Beyond the range of slowing down, the demagnetization times in NiPS$_3$ and FePS$_3$ are comparable, about 5 - 10 ps, and are longer than those reported earlier for CoPS$_3$ and considerably shorter than for MnPS$_3$. This points to the importance of the unquenched angular momentum of transition-metal ions in laser-induced demagnetization process.
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Submitted 31 January, 2024; v1 submitted 21 November, 2023;
originally announced November 2023.
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\emph{Ab initio} calculations of structural stability, thermodynamic and elastic properties of Ni, Pd, Rh, and Ir at high pressures
Authors:
N. A. Smirnov
Abstract:
The paper presents results of a comprehensive study from first principles into the properties of Ni, Pd, Rh, and Ir crystals under pressure. We calculated elastic constants, phonon spectra, isotherms, Hugoniots, sound velocities, relative structural stability, and phase diagrams. It is shown that in nickel and palladium under high pressures ($>$0.14 TPa) and temperatures ($>$4 kK), the body-center…
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The paper presents results of a comprehensive study from first principles into the properties of Ni, Pd, Rh, and Ir crystals under pressure. We calculated elastic constants, phonon spectra, isotherms, Hugoniots, sound velocities, relative structural stability, and phase diagrams. It is shown that in nickel and palladium under high pressures ($>$0.14 TPa) and temperatures ($>$4 kK), the body-centered cubic structure is thermodynamically most stable instead of the face-centered cubic one. Calculated results suggest that nickel under Earth-core conditions ($P$$\sim$0.3 TPa, $T$$\sim$6 kK) have a bcc structure. No structural changes were found to occur in Rh and Ir under pressures to 1 TPa at least. The paper also provides estimations for the pressure and temperature at which the metals of interest begin to melt under shock compression.
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Submitted 11 May, 2023;
originally announced May 2023.
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Interaction of thin tungsten and tantalum films with ultrashort laser pulses: calculations from first principles
Authors:
N. A. Smirnov
Abstract:
The interaction of ultrashort laser pulses with thin tungsten and tantalum films is investigated through the full-potential band-structure calculations. Our calculations show that at relatively low absorbed energies (the electron temperature $T_e$$\lesssim$7 kK), the lattice of tantalum undergoes noticeable hardening. The hardening leads to the change of the tantalum complete melting threshold und…
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The interaction of ultrashort laser pulses with thin tungsten and tantalum films is investigated through the full-potential band-structure calculations. Our calculations show that at relatively low absorbed energies (the electron temperature $T_e$$\lesssim$7 kK), the lattice of tantalum undergoes noticeable hardening. The hardening leads to the change of the tantalum complete melting threshold under these conditions. Calculations suggest that for the isochorically heated Ta film, if such hardening really occurs, the complete melting threshold will be at least 25% higher. It is also shown that the body-centered cubic structures of W and Ta crystals become dynamically unstable when the electronic subsystem is heated to sufficiently high temperatures ($T_e$$>$22 kK). This lead to their complete melting on the sub-picosecond time scale.
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Submitted 20 January, 2023;
originally announced January 2023.
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Comparative analysis for the behavior of beryllium and magnesium crystals at ultrahigh pressures
Authors:
N. A. Smirnov
Abstract:
The paper presents ab initio results on the structural phase stability of beryllium and magnesium crystals under high and ultrahigh pressures (multi-terapascal regime). Magnesium is shown to undergo a number of structural transformations which markedly reduce the crystal packing factor. As for beryllium, its high-pressure body-centered cubic phase remains stable even under ultrahigh pressures. Cha…
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The paper presents ab initio results on the structural phase stability of beryllium and magnesium crystals under high and ultrahigh pressures (multi-terapascal regime). Magnesium is shown to undergo a number of structural transformations which markedly reduce the crystal packing factor. As for beryllium, its high-pressure body-centered cubic phase remains stable even under ultrahigh pressures. Changes in the electronic structure of Be and Mg crystals under compression are analyzed and some interesting effects are revealed. Specifically, a narrow band gap appears in the electronic structure of magnesium under pressures above 2.5 TPa. For the metals of interest, PT-diagrams are constructed and compared with available experimental and theoretical results from other investigations.
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Submitted 24 April, 2024; v1 submitted 29 December, 2022;
originally announced December 2022.
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Improving Josephson junction reproducibility for superconducting quantum circuits: junction area fluctuation
Authors:
A. A. Pishchimova,
N. S. Smirnov,
D. A. Ezenkova,
E. A. Krivko,
E. V. Zikiy,
D. O. Moskalev,
A. I. Ivanov,
N. D. Korshakov,
I. A. Rodionov
Abstract:
Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. With the growing complexity of such devices, the requirements for reproducibility of their electrical properties across a chip have become stricter. Thus, the critical current $I_c$ variation of the Josephson junction, as the most imp…
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Josephson superconducting qubits and parametric amplifiers are prominent examples of superconducting quantum circuits that have shown rapid progress in recent years. With the growing complexity of such devices, the requirements for reproducibility of their electrical properties across a chip have become stricter. Thus, the critical current $I_c$ variation of the Josephson junction, as the most important electrical parameter, needs to be minimized. Critical current, in turn, is related to normal-state resistance the Ambegaokar-Baratoff formula, which can be measured at room temperature. Here, we focus on the dominant source of Josephson junction critical current non-uniformity junction area variation. We optimized Josephson junctions fabrication process and demonstrate resistance variation of $9.8-4.4\%$ and $4.8-2.3\%$ across $22{\times}22$ $mm^2$ and $5{\times}10$ $mm^2$ chip areas, respectively. For a wide range of junction areas from $0.008$ $μm^2$ to $0.12$ $μm^2$ we ensure a small linewidth standard deviation of $4$ $nm$ measured over 4500 junctions with linear dimensions from $80$ to $680$ $nm$. The developed process was tested on superconducting highly coherent transmon qubits $(T_1 > 100\:μs)$ and a nonlinear asymmetric inductive element parametric amplifier.
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Submitted 27 October, 2022;
originally announced October 2022.
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Towards highly efficient broadband superconducting quantum memory
Authors:
A. R. Matanin,
K. I. Gerasimov,
E. S. Moiseev,
N. S. Smirnov,
A. I. Ivanov,
E. I. Malevannaya,
V. I. Polozov,
E. V. Zikiy,
A. A. Samoilov,
I. A. Rodionov,
S. A. Moiseev
Abstract:
Microwave quantum memory promises advanced capabilities for noisy intermediate-scale superconducting quantum computers. Existing approaches to microwave quantum memory lack complete combination of high efficiency, long storage time, noiselessness and multi-qubit capacity. Here we report an efficient microwave broadband multimode quantum memory. The memory stores two spectral modes of single photon…
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Microwave quantum memory promises advanced capabilities for noisy intermediate-scale superconducting quantum computers. Existing approaches to microwave quantum memory lack complete combination of high efficiency, long storage time, noiselessness and multi-qubit capacity. Here we report an efficient microwave broadband multimode quantum memory. The memory stores two spectral modes of single photon level microwave radiation in on-chip system of eight coplanar superconducting resonators. Single mode storage shows a power efficiency of up to $60\pm 3\%$ at single photon energy and more than $73\pm 3\%$ at higher intensity. The demonstrated efficiency is an order of magnitude larger than the previously reported multimode microwave quantum memory. The noiseless character of the storage is confirmed by coherent state quantum process tomography. The demonstrated results pave the way to further increase in efficiency and hence building a practical multimode microwave memory for superconducting quantum circuits.
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Submitted 3 March, 2023; v1 submitted 28 July, 2022;
originally announced July 2022.
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Strong photoluminescence enhancement in indirect bandgap MoSe$_2$ nanophotonic resonator
Authors:
Bogdan R. Borodin,
Fedor A. Benimetskiy,
Valery Yu. Davydov,
Ilya A. Eliseyev,
Alexander N. Smirnov,
Dmitry A. Pidgayko,
Sergey I. Lepeshov,
Andrey A. Bogdanov,
Prokhor A. Alekseev
Abstract:
Transition metal dichalcogenides (TMDs) is a promising platform for new generation optoelectronics and nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMDs monolayers, bulk samples have an indirect bandgap that restricts their application as light emitters. On the other hand, the high refractive index of these materials seems ideal for creating high-qua…
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Transition metal dichalcogenides (TMDs) is a promising platform for new generation optoelectronics and nanophotonics due to their unique optical properties. However, in contrast to direct bandgap TMDs monolayers, bulk samples have an indirect bandgap that restricts their application as light emitters. On the other hand, the high refractive index of these materials seems ideal for creating high-quality nanophotonic resonators with a strong Purcell effect. In this work, we fabricate Whispering-gallery mode (WGM) resonators from bulk (i.e., indirect bandgap) MoSe$_2$ using resistless scanning probe lithography and study their optical properties. Micro-photoluminescence($μ$-PL) investigation revealed WGM spectra of resonators with an enhancement factor of 100 compared to pristine flake. Scattering experiments and modeling also confirm the WGM nature of spectra observed. Temperature dependence of PL revealed two components of photoluminescence. The first one quenches with decreasing temperature, the second one does not and becomes dominant. Therefore, this suggests that resonators amplify both direct and temperature-activated indirect PL. Thus, here we demonstrated the novel approach to fabricating nanophotonic resonators from bulk TMDs and obtaining PL from indirect bandgap materials. We believe that the suggested approach and structures have great prospects in nanophotonics.
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Submitted 4 September, 2022; v1 submitted 29 May, 2022;
originally announced May 2022.
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Topological photon pairs in a superconducting quantum metamaterial
Authors:
Ilya S. Besedin,
Maxim A. Gorlach,
Nikolay N. Abramov,
Ivan Tsitsilin,
Ilya N. Moskalenko,
Alina A. Dobronosova,
Dmitry O. Moskalev,
Alexey R. Matanin,
Nikita S. Smirnov,
Ilya A. Rodionov,
Alexander N. Poddubny,
Alexey V. Ustinov
Abstract:
Recent discoveries in topological physics hold a promise for disorder-robust quantum systems and technologies. Topological states provide the crucial ingredient of such systems featuring increased robustness to disorder and imperfections. Here, we use an array of superconducting qubits to engineer a one-dimensional topologically nontrivial quantum metamaterial. By performing microwave spectroscopy…
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Recent discoveries in topological physics hold a promise for disorder-robust quantum systems and technologies. Topological states provide the crucial ingredient of such systems featuring increased robustness to disorder and imperfections. Here, we use an array of superconducting qubits to engineer a one-dimensional topologically nontrivial quantum metamaterial. By performing microwave spectroscopy of the fabricated array, we experimentally observe the spectrum of elementary excitations. We find not only the single-photon topological states but also the bands of exotic bound photon pairs arising due to the inherent anharmonicity of qubits. Furthermore, we detect the signatures of the two-photon bound edge-localized state which hints towards interaction-induced localization in our system. Our work demonstrates an experimental implementation of the topological model with attractive photon-photon interaction in a quantum metamaterial.
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Submitted 23 June, 2020;
originally announced June 2020.
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State-of-the-art and prospects for intense red radiation from core-shell InGaN/GaN nanorods
Authors:
E. A. Evropeitsev,
D. R. Kazanov,
Y. Robin,
A. N. Smirnov,
I. A. Eliseyev,
V. Yu. Davydov,
A. A. Toropov,
S. Nitta,
T. V. Shubina,
H. Amano
Abstract:
Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photolumine…
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Core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) are promising for monolithic white light-emitting diodes and multicolor displays. Such applications, however, are still a challenge because intensity of red band is too weak as compared with blue and green ones. To clarify the problem, we have performed power and temperature dependent, as well as time-resolved measurements of photoluminescence (PL) in NRs of different In content and diameter. These studies have shown that the dominant PL bands originate from nonpolar and semipolar QWs, while a broad yellow-red band arises mostly from defects in the GaN core. Intensity of red emission from the polar QWs at the NR tip is fatally small. Our calculation of electromagnetic field distribution inside the NRs shows a low density of photon states in the tip that suppresses the red radiation. We suggest a design of hybrid NRs, in which polar QWs, located inside the GaN core, are pumped by UV-blue radiation of nonpolar QWs. Possibilities of radiative recombination rate enhancement by means of the Purcell effect are discussed.
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Submitted 10 March, 2020;
originally announced March 2020.
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Lattice and magnetic dynamics in polar chiral incommensurate antiferromagnet Ni$_2$InSbO$_6$
Authors:
M. A. Prosnikov,
A. N. Smirnov,
V. Yu. Davydov,
Y. Araki,
T. Arima,
R. V. Pisarev
Abstract:
Complex systems with coexisting polarity, chirality and incommensurate magnetism are of great interest because they open new degrees of freedom in interaction between different subsystems and therefore they host a plethora of intriguing physical properties. Here we report on optical properties and lattice and spin dynamics of Ni$_2$InSbO$_6$ single crystals studied with the use of polarized optica…
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Complex systems with coexisting polarity, chirality and incommensurate magnetism are of great interest because they open new degrees of freedom in interaction between different subsystems and therefore they host a plethora of intriguing physical properties. Here we report on optical properties and lattice and spin dynamics of Ni$_2$InSbO$_6$ single crystals studied with the use of polarized optical microscopy and micro-Raman spectroscopy in the temperature range 10-300 K. Ni$_2$InSbO$_6$ crystallizes in a polar structure described by the noncentrosymmetric space group R3 and two types of structural domains were visualized due to natural optical activity of opposite chirality. Raman tensor elements of most A and E phonons along with their symmetry were determined. The manifestation of LO-TO splitting was observed for the A modes. By tracking the temperature dependencies of phonon frequencies the well pronounced spin-phonon interaction was observed for several modes below and above the Néel transition temperature TN = 76 K. In antiferromagnetic phase a wide excitation centred at 247 cm-1 was detected and assigned to the two-magnon mode and this value was used for estimating exchange parameters through linear spin-wave theory calculations.
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Submitted 28 June, 2019;
originally announced June 2019.
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Multiwall nanotubes of molybdenum disulfide as optical resonators
Authors:
D. R. Kazanov,
A. V. Poshakinskiy,
V. Yu. Davydov,
A. N. Smirnov,
D. A. Kirilenko,
M. Remškar,
S. Fathipour,
A. Mintairov,
A. Seabaugh,
B. Gil,
T. V. Shubina
Abstract:
We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall…
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We study the optical properties of MoS$_2$ nanotubes (NTs) with walls comprising dozens of monolayers. We reveal strong peaks in micro-photoluminescence ($μ$-PL) spectra when detecting the light polarized along the NT axis. We develop a model describing the optical properties of the nanotubes acting as optical resonators which support the quantization of whispering gallery modes inside the NT wall. The experimental observation of the resonances in $μ$-PL allows one to use them as a contactless method of the estimation of the wall width. Our findings open a way to use such NTs as polarization-sensitive components of nanophotonic devices.
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Submitted 4 July, 2018;
originally announced July 2018.
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Unified mechanism of the surface Fermi level pinning in III-As nanowires
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
G. E. Cirlin,
R. R. Reznik,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level.…
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Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al$_{x}$Ga$_{1-x}$As and Ga$_{x}$In$_{1-x}$As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.
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Submitted 17 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
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Lattice dynamics and electronic transitions in a structurally-complex layered copper borate Cu$_3$(BO$_3$)$_2$
Authors:
A. D. Molchanova,
M. A. Prosnikov,
R. M. Dubrovin,
V. Yu. Davydov,
A. N. Smirnov,
R. V. Pisarev,
K. N. Boldyrev,
M. N. Popova
Abstract:
Copper borate Cu$_3$(BO$_3$)$_2$ is a complex compound with a layered crystallographic structure in which the Jahn-Teller active and magnetic copper Cu$^{2+}$ ions occupy sixteen nonequivalent positions in the unit cell displaying controversial magnetic behavior. In this paper, we report on the infrared and Raman spectroscopic studies of the lattice dynamics and the electronic structure of 3$d^9$…
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Copper borate Cu$_3$(BO$_3$)$_2$ is a complex compound with a layered crystallographic structure in which the Jahn-Teller active and magnetic copper Cu$^{2+}$ ions occupy sixteen nonequivalent positions in the unit cell displaying controversial magnetic behavior. In this paper, we report on the infrared and Raman spectroscopic studies of the lattice dynamics and the electronic structure of 3$d^9$ copper states below the fundamental absorption band. The lattice dynamics is characterized by a large number of phonons due to a low $P\overline{1}$ space group symmetry and a large unit cell with Z=10. Unusually rich set of phonons was found in the low-energy part of the infrared and Raman spectra below 100 cm$^{-1}$, which we tentatively assign to interlayer vibrations activated by a crystal superstructure and/or to weak force constants for modes related to some structural groups. Several phonons show anomalous behavior in the vicinity of the magnetic phase transition at $T_N$=10 K thus evidencing magnetoelastic interaction. No new phonons were found below $T_N$, which excludes the spin-Peierls type of the magnetic transition. In the region of electronic transitions, a strong broad absorption band centered at $\sim$1.8 eV is observed, which we assign to overlapping of transitions between the 3$d^9$ states of Cu$^{2+}$ ions split by the crystal field in nonequivalent positions. The fundamental charge-transfer absorption band edge has a complex structure and is positioned around $\sim$2.8-3.0 eV.
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Submitted 27 November, 2017; v1 submitted 9 October, 2017;
originally announced October 2017.
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Lattice and spin dynamics in a low-symmetry antiferromagnet NiWO$_4$
Authors:
M. A. Prosnikov,
V. Yu. Davydov,
A. N. Smirnov,
M. P. Volkov,
R. V. Pisarev,
P. Becker,
L. Bohatý
Abstract:
Lattice and magnetic dynamics of NiWO$_4$ single crystals were studied with the use of polarized Raman spectroscopy in a wide temperature range of 10-300 K including the antiferromagnetic ordering temperature $T_N$=62 K. Static magnetic measurements were used for characterizing the single crystals. All Raman-active phonons predicted by the group theory were observed and characterized. Magnetic sym…
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Lattice and magnetic dynamics of NiWO$_4$ single crystals were studied with the use of polarized Raman spectroscopy in a wide temperature range of 10-300 K including the antiferromagnetic ordering temperature $T_N$=62 K. Static magnetic measurements were used for characterizing the single crystals. All Raman-active phonons predicted by the group theory were observed and characterized. Magnetic symmetry analysis was used to determine possible magnetic space groups for NiWO$_4$ which can be also applied to any other isostructural crystal with the same magnetic propagation vector k=(1/2,0,0). Though the magnetic structure of NiWO$_4$ is relatively simple, a rich set of narrow and broad magnetic excitations with different polarization properties and temperature behavior in the very broad frequency range of 10-200 cm$^{-1}$ was observed, with some modes surviving at temperatures much higher than $T_N$ up to 220 K. Part of the magnetic excitations was identified as acoustic and optical spin-wave branches which allow us to construct exchange structure and estimate exchange and anisotropy constants with the use of linear spin-wave theory. Since the magnetic structure can be described as exchange-coupled AFM chains of $S=1$ ions, previously unobserved magnetic excitation at 24 cm$^{-1}$ is tentatively assigned to a Haldane gap mode.
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Submitted 31 May, 2017;
originally announced May 2017.
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Strain broadening of the 1042-nm zero-phonon line of the NV- center in diamond: a promising spectroscopic tool for defect tomography
Authors:
T. B. Biktagirov,
A. N. Smirnov,
V. Yu. Davydov,
M. W. Doherty,
A. Alkauskas,
B. C. Gibson,
V. A. Soltamov
Abstract:
The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center's infrared (IR) zero-phonon line (ZPL). We develop a model for these effects that accounts for the strain induced by photo-dependent microscopic distributions of defects. We apply this model to interpret observed variati…
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The negatively charged nitrogen-vacancy (NV-) center in diamond is a promising candidate for many quantum applications. Here, we examine the splitting and broadening of the center's infrared (IR) zero-phonon line (ZPL). We develop a model for these effects that accounts for the strain induced by photo-dependent microscopic distributions of defects. We apply this model to interpret observed variations of the IR ZPL shape with temperature and photoexcitation conditions. We identify an anomalous temperature dependent broadening mechanism and that defects other than the substitutional nitrogen center significantly contribute to strain broadening. The former conclusion suggests the presence of a strong Jahn-Teller effect in the center's singlet levels and the latter indicates that major sources of broadening are yet to be identified. These conclusions have important implications for the understanding of the center and the engineering of diamond quantum devices. Finally, we propose that the IR ZPL can be used as a sensitive spectroscopic tool for probing microscopic strain fields and performing defect tomography.
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Submitted 19 January, 2017;
originally announced January 2017.
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Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
D. A. Kirilenko,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under…
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We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO$_{x}$. The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals occurs. Observed transformation of WZ-GaAs to $β$-Ga$_{2}$O$_{3}$ nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/$β$-Ga$_{2}$O$_{3}$ for optoelectronic and photonic applications.
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Submitted 17 January, 2017;
originally announced January 2017.
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Raman and nuclear magnetic resonance investigation of alkali metal vapor interaction with alkene-based anti-relaxation coating
Authors:
O. Yu. Tretiak,
J. W. Blanchard,
D. Budker,
P. K. Olshin,
S. N. Smirnov,
M. V. Balabas
Abstract:
The use of anti-relaxation coatings in alkali vapor cells yields substantial performance improvements by reducing the probability of spin relaxation in wall collisions by several orders of magnitude. Some of the most effective anti-relaxation coating materials are alpha-olefins, which (as in the case of more traditional paraffin coatings) must undergo a curing period after cell manufacturing in or…
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The use of anti-relaxation coatings in alkali vapor cells yields substantial performance improvements by reducing the probability of spin relaxation in wall collisions by several orders of magnitude. Some of the most effective anti-relaxation coating materials are alpha-olefins, which (as in the case of more traditional paraffin coatings) must undergo a curing period after cell manufacturing in order to achieve the desired behavior. Until now, however, it has been unclear what physicochemical processes occur during cell curing, and how they may affect relevant cell properties. We present the results of nondestructive Raman-spectroscopy and magnetic-resonance investigations of the influence of alkali metal vapor (Cs or K) on an alpha-olefin, 1-nonadecene coating the inner surface of a glass cell. It was found that during the curing process, the alkali metal catalyzes migration of the carbon-carbon double bond, yielding a mixture of cis- and trans-2-nonadecene.
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Submitted 25 January, 2016;
originally announced January 2016.
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Lattice dynamics and a magnetic-structural phase transition in the nickel orthoborate $Ni_{3}(BO_{3})_{2}$
Authors:
R. V. Pisarev,
M. A. Prosnikov,
V. Yu. Davydov,
A. N. Smirnov,
E. M. Roginskii,
K. N. Boldyrev,
A. D. Molchanova,
M. N. Popova,
M. B. Smirnov,
V. Yu. Kazimirov
Abstract:
Nickel orthoborate $Ni_{3}(BO_{3})_{2}$ having a complex orthorhombic structure $P_{nnm}$ (#58, Z=2) of the kotoite type is known for quite a long time as an antiferromagnetic material below $T_{N}$ = 46 K, but up to now its physical properties including the lattice dynamics have not been explored. Six magnetic nickel $Ni^{2+}$ ions (S=1) in the unit cell are distributed over the 2a and 4f positio…
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Nickel orthoborate $Ni_{3}(BO_{3})_{2}$ having a complex orthorhombic structure $P_{nnm}$ (#58, Z=2) of the kotoite type is known for quite a long time as an antiferromagnetic material below $T_{N}$ = 46 K, but up to now its physical properties including the lattice dynamics have not been explored. Six magnetic nickel $Ni^{2+}$ ions (S=1) in the unit cell are distributed over the 2a and 4f positions in the centers of distorted $[O_{6}]$ octahedra. The $[NiO_{6}]$ units are linked via rigid $[BO_{3}]$ groups and these structural particularities impose restrictions on the lattice dynamics and spin-phonon interactions. We performed the symmetry analysis of the phonon modes at the center of the Brillouin zone. The structural parameters and phonon modes were calculated using Dmol3 program. We report and analyze results of infrared and Raman studies of phonon spectra measured in all required polarizations. Most of the even and odd phonons predicted on the basis of the symmetry analysis and theoretical calculations were reliably identified in the measured spectra. Absorption measurements in the infrared region showed emergence of several very narrow and weak phonons at the magnetic ordering temperature $T_{N}$. This observation proves the existence of a structural phase transition not reported before which is evidently coupled intrinsically with the magnetic dynamics of $Ni_{3}(BO_{3})_{2}$. A clear evidence of spin-phonon interaction was observed for some particular phonons below $T_{N}$.
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Submitted 27 January, 2016; v1 submitted 1 September, 2015;
originally announced September 2015.
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Structure, elastic moduli and thermodynamics of sodium and potassium at ultra-high pressures
Authors:
M. I. Katsnelson,
G. V. Sinko,
N. A. Smirnov,
A. V. Trefilov,
K. Yu. Khromov
Abstract:
The equations of state at room temperature as well as the energies of crystal structures up to pressures exceeding 100 GPa are calculated for Na and K . It is shown that the allowance for generalized gradient corrections (GGA) in the density functional method provides a precision description of the equation of state for Na, which can be used for the calibration of pressure scale. It is establish…
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The equations of state at room temperature as well as the energies of crystal structures up to pressures exceeding 100 GPa are calculated for Na and K . It is shown that the allowance for generalized gradient corrections (GGA) in the density functional method provides a precision description of the equation of state for Na, which can be used for the calibration of pressure scale. It is established that the close-packed structures and BCC structure are not energetically advantageous at high enough compressions. Sharply non-monotonous pressure dependences of elastic moduli for Na and K are predicted and melting temperatures at high pressures are estimated from various melting criteria. The phase diagram of K is calculated and found to be in good agreement with experiment.
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Submitted 30 March, 2000; v1 submitted 14 December, 1999;
originally announced December 1999.
