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Magnetic field induced exciton spin dynamics in indirect band gap (In,Al)As/AlAs quantum dots
Authors:
T. S. Shamirzaev,
D. R. Yakovlev,
D. S. Smirnov,
V. N. Mantsevich,
D. Kudlacik,
A. Yu. Gornov,
A. K. Gutakovskii,
M. Bayer
Abstract:
The exciton recombination and spin dynamics are investigated both experimentally and theoretically in an ensemble of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. The magnetic-field-induced circular polarization of the time-integrated photoluminescence changes sign across the emission spectrum with a width reflecting the QD size. It is negative on the low energy s…
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The exciton recombination and spin dynamics are investigated both experimentally and theoretically in an ensemble of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. The magnetic-field-induced circular polarization of the time-integrated photoluminescence changes sign across the emission spectrum with a width reflecting the QD size. It is negative on the low energy side, i.e. for emission from large QDs, but positive on the high energy side, i.e. for emission from small QDs. However, the exciton g factor, measured by spin-flip Raman scattering, is positive across the whole QD ensemble. The magnetic-field-induced circular polarization of the photoluminescence dynamics is studied as function of the magnetic field strength and direction. The dynamics are non-monotonic over a time range up to milliseconds. The time dependence of the photoluminescence circular polarization degree and sign strongly depends on the emission energy and changes with magnetic field orientation. The observed nonmonotonic behavior is provided by the interplay of bright and dark exciton states, contributing to the emission. The experiment is interpreted using a kinetic theory, which accounts for the dynamics of the spin states in the exciton level quartet in longitudinal and tilted magnetic fields, the radiative recombination processes, and the redistribution of the excitons between these states as result of spin relaxation. The model allows us to evaluate the electron and heavy hole spin relaxation times in QDs with different sizes.
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Submitted 4 July, 2025;
originally announced July 2025.
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Sharp spectroscopic fingerprints of disorder in an incompressible magnetic state
Authors:
Chaebin Kim,
Sumedh Rathi,
Naipeng Zhang,
Arnab Seth,
Nikolai V. Simonov,
Aya Rutherford,
Long Chen,
Haidong Zhou,
Cheng Peng,
Mingyu Xu,
Weiwei Xie,
Advik D. Vira,
Mengkun Tian,
Mykhaylo Ozerov,
Itamar Kimchi,
Martin Mourigal,
Dmitry Smirnov,
Zhigang Jiang
Abstract:
Disorder significantly impacts the electronic properties of conducting quantum materials by inducing electron localization and thus altering the local density of states and electric transport. In insulating quantum magnetic materials the effects of disorder are less understood and can drastically impact fluctuating spin states like quantum spin liquids. In the absence of transport tools, disorder…
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Disorder significantly impacts the electronic properties of conducting quantum materials by inducing electron localization and thus altering the local density of states and electric transport. In insulating quantum magnetic materials the effects of disorder are less understood and can drastically impact fluctuating spin states like quantum spin liquids. In the absence of transport tools, disorder is typically characterized using chemical methods or by semi-classical modeling of spin dynamics. This requires high magnetic fields that may not always be accessible. Here, we show that magnetization plateaus -- incompressible states found in many quantum magnets -- provide an exquisite platform to uncover otherwise undetectable amounts of disorder, regardless of the origin of the plateau. Using optical magneto-spectroscopy on the Ising-Heisenberg triangular-lattice antiferromagnet K$_2$Co(SeO$_3$)$_2$ exhibiting a 1/3 magnetization plateau, we identify sharp spectroscopic lines, the fine structure of which serves as a hallmark signature of disorder. Through analytical and numerical modeling, we show that these fingerprints not only enable us to quantify minute amounts of disorder but also reveal its nature -- as dilute vacancies. Remarkably, this model explains all details of the thermomagnetic response of our system, including the existence of multiple plateaus. Our findings provide a new approach to identifying disorder in quantum magnets.
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Submitted 9 June, 2025;
originally announced June 2025.
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Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Authors:
Wei Pan,
D. Bruce Burckel,
Catalin D. Spataru,
Keshab R. Sapkota,
Aaron J. Muhowski,
Samuel D. Hawkins,
John F. Klem,
Layla S. Smith,
Doyle A. Temple,
Zachery A. Enderson,
Zhigang Jiang,
Komalavalli Thirunavukkuarasu,
Li Xiang,
Mykhaylo Ozerov,
Dmitry Smirnov,
Chang Niu,
Peide D. Ye,
Praveen Pai,
Fan Zhang
Abstract:
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproduc…
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Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moire superlattices (MSL) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography defined semiconductor moires superlattices, in which three fundamental parameters, electron-electron interaction, spin-orbit coupling, and band topology, are designable. We experimentally investigate quantum transport properties in a moire specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum information and microelectronics technologies.
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Submitted 6 June, 2025;
originally announced June 2025.
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Inequivalence of the low-density insulating state and quantum Hall insulating states in a strongly correlated two-dimensional electron system
Authors:
M. Yu. Melnikov,
D. G. Smirnov,
A. A. Shashkin,
S. -H. Huang,
C. W. Liu,
S. V. Kravchenko
Abstract:
We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of electron solid formation at low densities, are not observed in the quan…
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We find that the behaviors of the voltage-current characteristics as one enters the low-density insulating state and integer quantum Hall insulating states in the ultra-clean two-dimensional electron system in SiGe/Si/SiGe quantum wells are qualitatively different. The double-threshold voltage-current curves, representative of electron solid formation at low densities, are not observed in the quantum Hall regime, which does not confirm the existence of a quasi-particle quantum Hall Wigner solid and indicates that quasi-particles near integer filling do not form an independent subsystem.
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Submitted 3 April, 2025;
originally announced April 2025.
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Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet
Authors:
S M Enamul Hoque Yousuf,
Yunong Wang,
Shreyas Ramachandran,
John Koptur-Palenchar,
Chiara Tarantini,
Li Xiang,
Stephen McGill,
Dmitry Smirnov,
Elton J. G. Santos,
Philip X. -L. Feng,
Xiao-Xiao Zhang
Abstract:
The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical mo…
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The coupling between the spin degrees of freedom and macroscopic mechanical motions, including striction, shearing, and rotation, has attracted wide interest with applications in actuation, transduction, and information processing. Experiments so far have established the mechanical responses to the long-range ordered or isolated single spin states. However, it remains elusive whether mechanical motions can couple to a different type of magnetic structure, the non-collinear spin textures, which exhibit nanoscale spatial variations of spin (domain walls, skyrmions, etc.) and are promising candidates to realize high-speed computing devices. Here, we report the detection of collective spin texture dynamics with nanoelectromechanical resonators made of two-dimensional antiferromagnetic (AFM) MnPS3 with $10^{-9}$ strain sensitivity. By examining radio frequency mechanical oscillations under magnetic fields, new magnetic transitions were identified with sharp dips in resonant frequency. They are attributed to the collective AFM domain wall motions as supported by the analytical modeling of magnetostriction and large-scale spin-dynamics simulations. Additionally, an abnormally large modulation in the mechanical nonlinearity at the transition field infers a fluid-like response due to the ultrafast domain motion. Our work establishes a strong coupling between spin texture and mechanical dynamics, laying the foundation for electromechanical manipulation of spin texture and developing quantum hybrid devices.
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Submitted 14 March, 2025;
originally announced March 2025.
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Spin noise reveals spin dynamics and recharging of lead halide perovskite nanocrystals
Authors:
V. O. Kozlov,
I. A. Smirnov,
M. S. Kuznetsova,
E. V. Kolobkova,
G. G. Kozlov,
V. S. Zapasskii,
D. S. Smirnov,
I. I. Ryzhov
Abstract:
The lead halide perovskite nanocrystals embedded into a glass matrix exhibit strong interaction with light and demonstrate exceptional optical and spin related features along with long-term chemical and physical stability. We apply the spin noise spectroscopy technique which offers a number of specific opportunities to study the spin system of CsPbI$_3$ nanocrystals in a fluorophosphate glass matr…
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The lead halide perovskite nanocrystals embedded into a glass matrix exhibit strong interaction with light and demonstrate exceptional optical and spin related features along with long-term chemical and physical stability. We apply the spin noise spectroscopy technique which offers a number of specific opportunities to study the spin system of CsPbI$_3$ nanocrystals in a fluorophosphate glass matrix. A pronounced spin precession peak with an isotropic $g$-factor absolute value of 2.7 and record dephasing time of T$_{2\text{,e}}$ = 2.7 ns is ascribed to resident electrons in the perovskite nanocrystals. The experimentally observed Faraday rotation noise with no noise of ellipticity is explained by saturation of the inhomogeneously broadened optical transition. Increasing the probe intensity, we went beyond the non-perturbative regime and observed a number of light-induced effects. In particular, the illumination with shorter wavelength light gives rise to a persistent recharging of the quantum dots by holes ($|g|=0.17$ and T$^*_{2\text{,h}}$ = 1.4 ns, T$^*_{1\text{,h}}$ $\geq$ 30 ns), which remains stable over multiple cycles of heating to the room temperature and cooling. In addition, elliptically polarized light induced an "optical" magnetic field on the system due to the AC Stark effect. It is confirmed using a new modification of polarization noise spectroscopy with a small degree of circular polarization of the probe light added with different frequencies.
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Submitted 24 February, 2025;
originally announced February 2025.
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Light-Induced Electron Pairing in a Bilayer Structure
Authors:
Qiaochu Wan,
Daniel Vaz,
Li Xiang,
Anshul Ramavath,
Brandon Vargo,
Juntong Ye,
Jonathan Beaumariage,
Kenji Watanabe,
Takashi Taniguchi,
Zheng Sun,
Dmitry Smirnov,
Nathan Youngblood,
Igor V. Bondarev,
David W. Snoke
Abstract:
Previous experimental and theoretical work has given evidence of the existence of doubly charged exciton states in strongly screened bilayers of transition metal dichalcogenide (TMD) layers. These complexes are important because they are performed electron pairs that can, in principle, undergo Bose-Einstein condensation (BEC), in which case they would also form a new type of superconductor, consis…
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Previous experimental and theoretical work has given evidence of the existence of doubly charged exciton states in strongly screened bilayers of transition metal dichalcogenide (TMD) layers. These complexes are important because they are performed electron pairs that can, in principle, undergo Bose-Einstein condensation (BEC), in which case they would also form a new type of superconductor, consisting of stable bosons with net charges. In this paper, we present key electrostatic and magnetic measurements that definitively confirm the existence of these charged bosons. These measurements include 1) continuous control of the doping density with both positive and negative carriers, showing the expected population dependencies on the free carrier density, and 2) measurement of the dependence on the magnetic field, showing that this new bound state is a spin triplet. These results imply that it is promising to look for BEC and superconductivity in this system.
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Submitted 12 December, 2024; v1 submitted 9 December, 2024;
originally announced December 2024.
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Magneto-optical evidence of tilting effect in coupled Weyl bands
Authors:
Seongphill Moon,
Yuxuan Jiang,
Jennifer Neu,
Theo Siegrist,
Mykhaylo Ozerov,
Zhigang Jiang,
Dmitry Smirnov
Abstract:
Theories have revealed the universality of the band tilting effect in topological Weyl semimetals (WSMs) and its implications for the material's physical properties. However, the experimental identification of tilted Weyl bands remains much less explored. Here, by combining magneto-infrared optical studies with a four-band coupled Weyl point model, we report spectroscopic evidence of the tilting e…
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Theories have revealed the universality of the band tilting effect in topological Weyl semimetals (WSMs) and its implications for the material's physical properties. However, the experimental identification of tilted Weyl bands remains much less explored. Here, by combining magneto-infrared optical studies with a four-band coupled Weyl point model, we report spectroscopic evidence of the tilting effect in the well-established WSM niobium phosphide. Specifically, we observe Landau level transitions with rich features that are well reproduced within a model of coupled tilted Weyl points. Our analysis indicates that the tilting effect relaxes the selection rules and gives rise to transitions that would otherwise be forbidden in the non-tilt case. Additionally, we observe unconventional interband transitions with flat and negative magnetic field dispersions, highlighting the importance of coupling between Weyl points. Our results not only emphasize the significance of the tilting effect in the optical responses of WSMs but also demonstrate magneto-optics as an effective tool for probing the tilting effect in electronic band structures.
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Submitted 20 February, 2025; v1 submitted 25 November, 2024;
originally announced November 2024.
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Hidden anisotropy controls spin-photon entanglement in a charged quantum dot
Authors:
Yuriy Serov,
Aidar Galimov,
Dmitry S. Smirnov,
Maxim Rakhlin,
Nikita Leppenen,
Grigorii Klimko,
Sergey Sorokin,
Irina Sedova,
Daria Berezina,
Yuliya Salii,
Marina Kulagina,
Yuriy Zadiranov,
Sergey Troshkov,
Tatiana V. Shubina,
Alexey Toropov
Abstract:
Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in…
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Photon entanglement is indispensable for optical quantum technologies. Measurement-based optical quantum computing and all-optical quantum networks rely on multiphoton cluster states consisting of indistinguishable entangled photons. A promising method for creating such cluster states on demand is spin-photon entanglement using the spin of a resident charge carrier in a quantum dot, precessing in a weak external magnetic field. In this work, we show theoretically and experimentally that spin-photon entanglement is strongly affected by the hidden anisotropy of quantum dots, which can arise from mechanical stress, shape anisotropy and even specific crystal structure. In the measurements of time-resolved photoluminescence and cross-polarized second-order photon correlation function in a magnetic field, the anisotropy manifests itself in the spin dynamics and, as a consequence, in the spin-photon concurrence. The measured time-filtered spin-photon Bell state fidelity depends strongly on the excitation polarization and reaches an extremely high value of 94% at maximum. We specify the magnetic field and excitation polarization directions that maximize spin-photon entanglement and thereby enhance the fidelity of multiphoton entangled states.
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Submitted 3 October, 2024;
originally announced October 2024.
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Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields
Authors:
M. Yu. Melnikov,
D. G. Smirnov,
A. A. Shashkin,
S. -H. Huang,
C. W. Liu,
S. V. Kravchenko
Abstract:
We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicula…
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We find that the double-threshold voltage-current characteristics in the insulating regime in the ultra-clean two-valley two-dimensional electron system in SiGe/Si/SiGe quantum wells are promoted by perpendicular magnetic fields, persisting to an order of magnitude lower voltages and considerably higher electron densities compared to the zero-field case. This observation indicates the perpendicular-magnetic-field stabilization of the quantum electron solid.
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Submitted 7 February, 2025; v1 submitted 10 September, 2024;
originally announced September 2024.
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Intervalley mixing of interface excitons at lateral heterojunctions
Authors:
M. V. Durnev,
D. S. Smirnov
Abstract:
$\require{mediawiki-texvc}$ We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of $\mathbf{K}_+$ and $\mathbf{K}_-$ valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of $0.2$ eV$\cdotÅ…
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$\require{mediawiki-texvc}$ We demonstrate that the low symmetry of armchair lateral heterojunction between transition metal dichalcogenide monolayers allows for the mixing of $\mathbf{K}_+$ and $\mathbf{K}_-$ valleys. From the tight binding model we estimate the strength of the valley coupling to be of the order of $0.2$ eV$\cdotÅ$ for typical heteropairs. We show that the valley mixing gives rise to the in-plane $g$-factor of localized electrons leading to the spin precession in the in-plane magnetic field. We further study the effects of the valley mixing on the fine structure and dynamics of excitons at type-II lateral heterojunctions. We find that the interplay of the valley mixing and long-range exchange interaction leads to the linear polarization of exciton photoluminescence along the armchair heterojunction with the degree of polarization up to $1/3$ under unpolarized excitation. Application of the in-plane magnetic field of the order of 10$-$100 mT in any direction leads to the depolarization of the photoluminescence.
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Submitted 19 August, 2024;
originally announced August 2024.
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Cooling and heating nuclear spins by strongly localized electrons
Authors:
D. S. Smirnov,
K. V. Kavokin
Abstract:
The concept of nuclear spin temperature has been a cornerstone of the theory of dynamic nuclear spin polarization by electrons in various semiconductor structures for decades. Still, it is not always applicable to strongly localized electrons due to their long spin correlation times. This motivated the use of the oversimplified central spin model for the description of the nuclear spin dynamics in…
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The concept of nuclear spin temperature has been a cornerstone of the theory of dynamic nuclear spin polarization by electrons in various semiconductor structures for decades. Still, it is not always applicable to strongly localized electrons due to their long spin correlation times. This motivated the use of the oversimplified central spin model for the description of the nuclear spin dynamics in quantum dots. Here, we present a microscopic theory that bridges the gap between these two approaches by describing the nuclear spin thermodynamics for systems with long electron spin correlation times. Importantly, our theory predicts that efficient nuclear spin cooling by strongly localized electrons requires an external magnetic field by far exceeding the local field of nuclear spin-spin interaction, and that the time of the nuclear spin heating by unpolarized electrons may change by several orders of magnitude depending on the magnetic field.
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Submitted 12 August, 2024; v1 submitted 12 June, 2024;
originally announced June 2024.
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Interplay between hyperfine and anisotropic exchange interactions in exciton luminescence of quantum dots
Authors:
D. S. Smirnov,
E. L. Ivchenko
Abstract:
The optical orientation and alignment of excitons in semiconductor indirect gap quantum dots have been studied theoretically. A special regime is analyzed in which the energy of the hyperfine interaction of an electron with lattice nuclei is small compared to the exchange splitting between bright and dark excitonic levels, but is comparable to the anisotropic exchange splitting of the radiative do…
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The optical orientation and alignment of excitons in semiconductor indirect gap quantum dots have been studied theoretically. A special regime is analyzed in which the energy of the hyperfine interaction of an electron with lattice nuclei is small compared to the exchange splitting between bright and dark excitonic levels, but is comparable to the anisotropic exchange splitting of the radiative doublet. The dependencies of degrees of circular and linear polarization on the external magnetic field under resonant excitation of excitons by polarized light are calculated.
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Submitted 24 May, 2024;
originally announced May 2024.
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Birefringent spin-photon interface generates polarization entanglement
Authors:
Nikita Leppenen,
Dmitry S. Smirnov
Abstract:
A spin-photon interface based on the luminescence of a singly charged quantum dot in a micropillar cavity allows for the creation of photonic entangled states. Current devices suffer from cavity birefringence, which limits the generation of spin-photon entanglement. In this paper, we theoretically study the light absorption and emission by the interface with an anisotropic cavity and derive the ma…
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A spin-photon interface based on the luminescence of a singly charged quantum dot in a micropillar cavity allows for the creation of photonic entangled states. Current devices suffer from cavity birefringence, which limits the generation of spin-photon entanglement. In this paper, we theoretically study the light absorption and emission by the interface with an anisotropic cavity and derive the maximal excitation and spin-photon entanglement conditions. We show that the concurrence of the spin-photon state equal to one and complete quantum dot population inversion can be reached for a micropillar cavity with any degree of birefringence by tuning the quantum dot resonance strictly between the cavity modes. This sweet spot is also valid for generating a multiphoton cluster state, as we demonstrate by calculating the three-tangle and fidelity with the maximally entangled state.
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Submitted 24 April, 2024;
originally announced April 2024.
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Exciton-activated effective phonon magnetic moment in monolayer MoS2
Authors:
Chunli Tang,
Gaihua Ye,
Cynthia Nnokwe,
Mengqi Fang,
Li Xiang,
Masoud Mahjouri-Samani,
Dmitry Smirnov,
Eui-Hyeok Yang,
Tingting Wang,
Lifa Zhang,
Rui He,
Wencan Jin
Abstract:
Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer…
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Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons.
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Submitted 7 April, 2024; v1 submitted 22 March, 2024;
originally announced March 2024.
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Comparative Raman Scattering Study of Crystal Field Excitations in Co-based Quantum Magnets
Authors:
Banasree S. Mou,
Xinshu Zhang,
Li Xiang,
Yuanyuan Xu,
Ruidan Zhong,
Robert J. Cava,
Haidong Zhou,
Zhigang Jiang,
Dmitry Smirnov,
Natalia Drichko,
Stephen M. Winter
Abstract:
Co-based materials have recently been explored due to potential to realise complex bond-dependent anisotropic magnetism. Prominent examples include Na$_2$Co$_2$TeO$_6$, BaCo$_2$(AsO$_4$)$_2$, Na$_2$BaCo(PO$_4$)$_2$, and CoX$_2$ (X = Cl, Br, I). In order to provide insight into the magnetic interactions in these compounds, we make a comparative analysis of their local crystal electric field excitat…
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Co-based materials have recently been explored due to potential to realise complex bond-dependent anisotropic magnetism. Prominent examples include Na$_2$Co$_2$TeO$_6$, BaCo$_2$(AsO$_4$)$_2$, Na$_2$BaCo(PO$_4$)$_2$, and CoX$_2$ (X = Cl, Br, I). In order to provide insight into the magnetic interactions in these compounds, we make a comparative analysis of their local crystal electric field excitations spectra via Raman scattering measurements. Combining these measurements with theoretical analysis confirms the validity of $j_{\rm eff} = 1/2$ single-ion ground states for all compounds, and provides accurate experimental estimates of the local crystal distortions, which play a prominent role in the magnetic couplings between spin-orbital coupled Co moments.
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Submitted 18 March, 2024;
originally announced March 2024.
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Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene
Authors:
Haidong Tian,
Emilio Codecido,
Dan Mao,
Kevin Zhang,
Shi Che,
Kenji Watanabe,
Takashi Taniguchi,
Dmitry Smirnov,
Eun-Ah Kim,
Marc Bockrath,
Chun Ning Lau
Abstract:
Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins;…
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Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins; much less explored is orbital geometric frustration. For electrons in twisted bilayer graphene (tBLG) at denominator 3 fractional filling, Coulomb interactions and the Wannier orbital shapes are predicted to strongly constrain spatial charge ordering, leading to geometrically frustrated ground states that produce a new class of correlated insulators (CIs). Here we report the observation of dominant denominator 3 fractional filling insulating states in large angle tBLG; these states persist in magnetic fields and display magnetic ordering signatures and tripled unit cell reconstruction. These results are in agreement with a strong-coupling theory of symmetry-breaking of geometrically frustrated fractional states.
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Submitted 22 February, 2024;
originally announced February 2024.
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Tunneling spin Nernst effect for a single quantum dot
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
We describe theoretically the spin Nernst effect for electrons tunneling to a quantum dot from a quantum wire with the heat flowing along it. Such a tunneling spin Nernst effect is shown to take place due to the spin-dependent electron tunneling produced by the spin-orbit coupling. The Coulomb interaction of electrons in the quantum dot is taken into account using nonequilibrium Green's functions…
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We describe theoretically the spin Nernst effect for electrons tunneling to a quantum dot from a quantum wire with the heat flowing along it. Such a tunneling spin Nernst effect is shown to take place due to the spin-dependent electron tunneling produced by the spin-orbit coupling. The Coulomb interaction of electrons in the quantum dot is taken into account using nonequilibrium Green's functions and is shown to increase significantly the accumulated spin in a single quantum dot. The largest possible degree of spin polarization is discussed.
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Submitted 6 August, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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In-situ Synchrotron X-Ray Photoelectron Spectroscopy Study of Medium-Temperature Baking of Niobium for SRF Application
Authors:
Alena Prudnikava,
Yegor Tamashevich,
Anna Makarova,
Dmitry Smirnov,
Jens Knobloch
Abstract:
In the present work the chemical composition of niobium surface upon 200-400 °C baking similar to "medium-temperature baking" and "furnace baking" of cavities is explored in-situ by synchrotron X-ray photoelectron spectroscopy (XPS). Our findings imply that below the critical thickness of $Nb_2O_5$ layer (about 1 nm) niobium starts to interact actively with surface impurities, such as carbon and p…
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In the present work the chemical composition of niobium surface upon 200-400 °C baking similar to "medium-temperature baking" and "furnace baking" of cavities is explored in-situ by synchrotron X-ray photoelectron spectroscopy (XPS). Our findings imply that below the critical thickness of $Nb_2O_5$ layer (about 1 nm) niobium starts to interact actively with surface impurities, such as carbon and phosphorus. By studying the kinetics of the native oxide reduction, the activation energy and the rate-constant relation have been determined and used for the calculation of the oxygen-concentration depth profiles. It has been established that the controlled diffusion of oxygen when the native-oxide layer represents an oxygen source is realized at temperatures 200-300 °C, while at 400 °C the pentoxide is completely reduced and the doping level is determined by an ambient oxygen partial pressure. Fluorine (F to Nb atomic ratio is about 0.2) after the buffered chemical polishing was found to be incorporated into the surface layer probed by XPS (about 4.6 nm), and its concentration increased during the low-temperature baking (F/Nb up to 0.35 at 230 °C) and depleted at higher temperatures (F/Nb=0.11 at 400 °C). Thus, the influence of fluorine on the performance of mid-T baked, mild-baked (120 °C/48 h) and nitrogen-doped cavities must be considered. The possible role of fluorine in the educed $Nb^{+5}$ to $Nb^{+4}$ reaction under the impact of an X-ray beam at room temperature and during the thermal treatment is also discussed. The range of temperature and duration parameters of the thermal treatment at which the niobium surface would not be contaminated with impurities is determined for industrial applications.
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Submitted 8 February, 2024; v1 submitted 11 December, 2023;
originally announced December 2023.
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Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells
Authors:
Dmitry Shcherbakov,
Greyson Voigt,
Shahriar Memaran,
Gui-Bin Liu,
Qiyue Wang,
Kenji Watanabe,
Takashi Taniguchi,
Dmitry Smirnov,
Luis Balicas,
Fan Zhang,
Chun Ning Lau
Abstract:
A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we…
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A two-dimensional (2D) quantum electron system is characterized by the quantized energy levels, or subbands, in the out-of-plane direction. Populating higher subbands and controlling the inter-subband transitions have wide technological applications such as optical modulators and quantum cascade lasers. In conventional materials, however, the tunability of intersubband spacing is limited. Here we demonstrate electrostatic population and characterization of the second subband in few-layer InSe quantum wells, with giant tunability of its energy, population, and spin-orbit coupling strength, via the control of not only layer thickness but also out-of-plane displacement field. A modulation of as much as 350% or over 250 meV is achievable, underscoring the promise of InSe for tunable infrared and THz sources, detectors and modulators.
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Submitted 23 February, 2024; v1 submitted 5 December, 2023;
originally announced December 2023.
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Spin noise of a halide perovskite
Authors:
V. O. Kozlov,
N. I. Selivanov,
C. C. Stoumpos,
G. G. Kozlov,
V. S. Zapasskii,
Yu. V. Kapitonov,
D. S. Smirnov,
I. I. Ryzhov
Abstract:
We report on first observation of spin noise in a strongly birefringent semiconductor -- halide perovskite single crystal MAPbI$_3$. The observed spin noise resonance is ascribed to free holes with a record spin dephasing time of 4 ns. The spin dynamics is found to be affected by the residual light absorption of the crystal providing renormalization of the Larmor frequency. Extended spin noise spe…
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We report on first observation of spin noise in a strongly birefringent semiconductor -- halide perovskite single crystal MAPbI$_3$. The observed spin noise resonance is ascribed to free holes with a record spin dephasing time of 4 ns. The spin dynamics is found to be affected by the residual light absorption of the crystal providing renormalization of the Larmor frequency. Extended spin noise spectroscopy with rotating magnetic field allowed us not only to evaluate the $g$-factor anisotropy, but also to distinguish two different spin subsystems tentatively associated to twinning of the crystal.
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Submitted 10 November, 2023;
originally announced November 2023.
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Semi-Dirac Fermions in a Topological Metal
Authors:
Yinming Shao,
Seongphill Moon,
A. N. Rudenko,
Jie Wang,
Jonah Herzog-Arbeitman,
Mykhaylo Ozerov,
David Graf,
Zhiyuan Sun,
Raquel Queiroz,
Seng Huat Lee,
Yanglin Zhu,
Zhiqiang Mao,
M. I. Katsnelson,
B. Andrei Bernevig,
Dmitry Smirnov,
Andrew. J. Millis,
D. N. Basov
Abstract:
Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions (2D), a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted sixteen years ago. These highly exotic quasiparticles - the semi-Dirac fermions - ignited intense theoretical and experimental interest but…
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Topological semimetals with massless Dirac and Weyl fermions represent the forefront of quantum materials research. In two dimensions (2D), a peculiar class of fermions that are massless in one direction and massive in the perpendicular direction was predicted sixteen years ago. These highly exotic quasiparticles - the semi-Dirac fermions - ignited intense theoretical and experimental interest but remain undetected. Using magneto-optical spectroscopy, we demonstrate the defining feature of semi-Dirac fermions - $B^{2/3}$ scaling of Landau levels - in a prototypical nodal-line metal ZrSiS. In topological metals, including ZrSiS, nodal-lines extend the band degeneracies from isolated points to lines, loops or even chains in the momentum space. With $\textit{ab initio}$ calculations and theoretical modeling, we pinpoint the observed semi-Dirac spectrum to the crossing points of nodal-lines in ZrSiS. Crossing nodal-lines exhibit a continuum absorption spectrum but with singularities that scale as $B^{2/3}$ at the crossing. Our work sheds light on the hidden quasiparticles emerging from the intricate topology of crossing nodal-lines and highlights the potential to explore quantum geometry with linear optical responses.
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Submitted 31 October, 2024; v1 submitted 7 November, 2023;
originally announced November 2023.
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Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2
Authors:
Yuxin Zhang,
Haidong Tian,
Huaixuan Li,
Chiho Yoon,
Ryan A. Nelson,
Ziling Li,
Kenji Watanabe,
Takashi Taniguchi,
Dmitry Smirnov,
Roland Kawakami,
Joshua E. Goldberger,
Fan Zhang,
Chun Ning Lau
Abstract:
Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compa…
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Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
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Submitted 19 October, 2023;
originally announced October 2023.
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$g$-factor engineering with InAsSb alloys toward zero band gap limit
Authors:
Yuxuan Jiang,
Maksim Ermolaev,
Seongphill Moon,
Gela Kipshidze,
Gregory Belenky,
Stefan Svensson,
Mykhaylo Ozerov,
Dmitry Smirnov,
Zhigang Jiang,
Sergey Suchalkin
Abstract:
Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap o…
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Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.
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Submitted 9 September, 2023;
originally announced September 2023.
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Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots
Authors:
D. S. Smirnov,
E. L. Ivchenko
Abstract:
In this work, we theoretically investigate the optical orientation and alignment of excitons in quantum dots with weak electron-hole exchange interaction and long exciton radiative lifetimes. This particular regime is realized in semiconductor heterosystems where excitons are indirect in the $\boldsymbol r$ or $\boldsymbol k$ space. The main role in the fine structure of excitonic levels in these…
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In this work, we theoretically investigate the optical orientation and alignment of excitons in quantum dots with weak electron-hole exchange interaction and long exciton radiative lifetimes. This particular regime is realized in semiconductor heterosystems where excitons are indirect in the $\boldsymbol r$ or $\boldsymbol k$ space. The main role in the fine structure of excitonic levels in these systems is played by the hyperfine interaction of the electron in the confined exciton and fluctuations of the Overhauser field. Along with it, the effects of nonradiative recombination and exchange interaction are considered. We start with the model of vanishing exchange interaction and nonradiative exciton recombination and then include them into consideration in addition to the strong Overhauser field. In the nanoobjects under study, the polarization properties of the resonant photoluminescence are shown to vary with the external magnetic filed in completely different way as compared with the behaviour of the conventional quantum dot structures.
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Submitted 29 August, 2023;
originally announced August 2023.
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Spin light emitting diode based on exciton fine structure tuning in quantum dots
Authors:
A. V. Shumilin,
T. S. Shamirzaev,
D. S. Smirnov
Abstract:
We propose a concept of quantum dot based light emitting diode that produces circularly polarized light due to the tuning of the exciton fine structure by magnetic field and electron nuclear hyperfine interaction. The device operates under injection of electrons and holes from nonmagnetic contacts in a small field of the order of milliteslas. Its size can be parametrically smaller than the light w…
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We propose a concept of quantum dot based light emitting diode that produces circularly polarized light due to the tuning of the exciton fine structure by magnetic field and electron nuclear hyperfine interaction. The device operates under injection of electrons and holes from nonmagnetic contacts in a small field of the order of milliteslas. Its size can be parametrically smaller than the light wavelength, and circular polarization degree of electroluminescence can reach 100%. The proposed concept is compatible with the micropillar cavities, which allows for the deterministic electrical generation of single circularly polarized photons.
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Submitted 22 June, 2023;
originally announced June 2023.
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Disorder-enriched magnetic excitations in the Kitaev quantum spin liquid candidate Na$_2$Co$_2$TeO$_6$
Authors:
Li Xiang,
Ramesh Dhakal,
Mykhaylo Ozerov,
Yuxuan Jiang,
Banasree S. Mou,
Andrzej Ozarowski,
Qing Huang,
Haidong Zhou,
Jiyuan Fang,
Stephen M. Winter,
Zhigang Jiang,
Dmitry Smirnov
Abstract:
Using optical magneto-spectroscopy, we investigate the magnetic excitations of Na$_2$Co$_2$TeO$_6$ in a broad magnetic field range ($0\ \rm{T}\leq B\leq 17.5\ \rm{T}$) at low temperature. Our measurements reveal rich spectra of in-plane magnetic excitations with a surprisingly large number of modes, even in the high-field spin-polarized state. Theoretical calculations find that the Na-occupation d…
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Using optical magneto-spectroscopy, we investigate the magnetic excitations of Na$_2$Co$_2$TeO$_6$ in a broad magnetic field range ($0\ \rm{T}\leq B\leq 17.5\ \rm{T}$) at low temperature. Our measurements reveal rich spectra of in-plane magnetic excitations with a surprisingly large number of modes, even in the high-field spin-polarized state. Theoretical calculations find that the Na-occupation disorder in \NCTO plays a crucial role in generating these modes. Our work demonstrates the necessity to consider disorder in the spin environment in the search for Kitaev quantum spin liquid states in practicable materials.
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Submitted 12 May, 2023;
originally announced May 2023.
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Kondo enhancement of current induced spin accumulation in a quantum dot
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire taking into account the spin dependent electron tunneling from the wire to the dot. Using the nonequilibrium…
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Weak spin-orbit coupling produces very limited current induced spin accumulation in semiconductor nanostructures. We demonstrate a possibility to increase parametrically the spin polarization using the Kondo effect. As a model object we consider a quantum dot side coupled to a quantum wire taking into account the spin dependent electron tunneling from the wire to the dot. Using the nonequilibrium Green's functions, we show that the many body correlations between the quantum dot and the quantum wire can increase the current induced spin accumulation at low temperatures by almost two orders of magnitude for the moderate system parameters. The enhancement is related to the Kondo peak formation in the density of states and the spin instability due to the strong Coulomb interaction. This effect may be useful to electrically manipulate the localized electron spins in quantum dots for their quantum applications.
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Submitted 21 March, 2023;
originally announced March 2023.
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Evidencing the squeezed dark nuclear spin state in lead halide perovskites
Authors:
E. Kirstein,
D. S. Smirnov,
E. A. Zhukov,
D. R. Yakovlev,
N. E. Kopteva,
D. N. Dirin,
O. Hordiichuk,
M. V. Kovalenko,
M. Bayer
Abstract:
Coherent many-body states are highly promising for robust and scalable quantum information processing. While far-reaching theoretical predictions have been made for various implementations, direct experimental evidence of their appealing properties can be challenging. Here, we demonstrate coherent optical manipulation of the nuclear spin ensemble in the lead halide perovskite semiconductor FAPbBr…
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Coherent many-body states are highly promising for robust and scalable quantum information processing. While far-reaching theoretical predictions have been made for various implementations, direct experimental evidence of their appealing properties can be challenging. Here, we demonstrate coherent optical manipulation of the nuclear spin ensemble in the lead halide perovskite semiconductor FAPbBr$_3$ (FA=formamidinium), targeting a long-postulated collective dark state that is insensitive to optical pumping. Via optical orientation of localized hole spins we drive the nuclear many-body system into an entangled state, requiring a weak magnetic field of only a few Millitesla strength at cryogenic temperatures. During its fast build-up, the nuclear polarization along the optical axis remains small, while the transverse nuclear spin fluctuations are strongly reduced, corresponding to spin squeezing as evidenced by a strong violation of the generalized nuclear squeezing-inequality with $ξ_s < 0.3$. The dark state evidenced in this process corresponds to an approximately 750-body entanglement between the nuclei. Dark nuclear spin states can be exploited to store quantum information benefiting from their long-lived many-body coherence and to perform quantum measurements with a precision beyond the standard limit.
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Submitted 26 January, 2023;
originally announced January 2023.
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Optical orientation of excitons in a longitudinal magnetic field in indirect band gap (In,Al)As/AlAs quantum dots with type-I band alignment
Authors:
T. S. Shamirzaev,
A. V. Shumilin,
D. S. Smirnov,
D. Kudlacik,
S. V. Nekrasov,
Yu. G. Kusrayev,
D. R. Yakovlev,
M. Bayer
Abstract:
The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polar…
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The exciton recombination and spin dynamics in (In,Al)As/AlAs quantum dots (QDs) with indirect band gap and type-I band alignment are studied. The negligible (less than $0.2~μ$eV) value of the anisotropic exchange interaction in these QDs prevents a mixing of the excitonic basis states with pure spin and allows for the formation of spin polarized bright excitons for quasi-resonant circularly polarized excitation. In a longitudinal magnetic field, the recombination and spin dynamics of the excitons are controlled by the hyperfine interaction between the electron and nuclear spins. A QD blockade by dark excitons is observed in magnetic field eliminating the impact of the nuclear spin fluctuations. A kinetic equation model, which accounts for the population dynamics of the bright and dark exciton states as well as for the spin dynamics, has been developed, which allows for a quantitative description of the experimental data.
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Submitted 26 January, 2023;
originally announced January 2023.
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Tuning the nuclei-induced spin relaxation of localized electrons by the quantum Zeno and anti-Zeno effects
Authors:
V. Nedelea,
N. V. Leppenen,
E. Evers,
D. S. Smirnov,
M. Bayer,
A. Greilich
Abstract:
Quantum measurement back action is fundamentally unavoidable when manipulating electron spins. Here we demonstrate that this back action can be efficiently exploited to tune the spin relaxation of localized electrons induced by the hyperfine interaction. In optical pump-probe experiments, powerful probe pulses suppress the spin relaxation of electrons on Si donors in an InGaAs epilayer due to the…
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Quantum measurement back action is fundamentally unavoidable when manipulating electron spins. Here we demonstrate that this back action can be efficiently exploited to tune the spin relaxation of localized electrons induced by the hyperfine interaction. In optical pump-probe experiments, powerful probe pulses suppress the spin relaxation of electrons on Si donors in an InGaAs epilayer due to the quantum Zeno effect. By contrast, an increase of the probe power leads to a speed up of the spin relaxation for electrons in InGaAs quantum dots due to the quantum anti-Zeno effect. The microscopic description shows that the transition between the two regimes occurs when the spin dephasing time is comparable to the probe pulse repetition period.
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Submitted 15 December, 2022;
originally announced December 2022.
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Revealing temperature evolution of the Dirac band in ZrTe$_5$ via magneto-infrared spectroscopy
Authors:
Yuxuan Jiang,
Tianhao Zhao,
Luojia Zhang,
Qiang Chen,
Haidong Zhou,
Mykhaylo Ozerov,
Dmitry Smirnov,
Zhigang Jiang
Abstract:
We report the temperature evolution of the Dirac band in semiconducting zirconium pentatelluride (ZrTe$_5$) using magneto-infrared spectroscopy. We find that the band gap is temperature independent at low temperatures and increases with temperature at elevated temperatures. Although such an observation seems to support a weak topological insulator phase at all temperatures and defy the previously…
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We report the temperature evolution of the Dirac band in semiconducting zirconium pentatelluride (ZrTe$_5$) using magneto-infrared spectroscopy. We find that the band gap is temperature independent at low temperatures and increases with temperature at elevated temperatures. Although such an observation seems to support a weak topological insulator phase at all temperatures and defy the previously reported topological phase transition (TPT) at an intermediate temperature in ZrTe$_5$, we show that it is also possible to explain the observation by considering the effect of conduction-valence band mixing and band inversion with a strong topological insulator phase at low temperatures. Our work provides an alternative picture of the band gap evolution across TPT.
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Submitted 27 July, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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Thickness and twist angle dependent interlayer excitons in metal monochalcogenide heterostructures
Authors:
Wenkai Zheng,
Li Xiang,
Felipe de Quesada,
Mathias Augustin,
Zhengguang Lu,
Matthew Wilson,
Aditya Sood,
Fengcheng Wu,
Dmitry Shcherbakov,
Shahriar Memaran,
Ryan E. Baumbach,
Gregory T. McCandless,
Julia Y. Chan,
Song Liu,
James Edgar,
Chun Ning Lau,
Chun Hung Lui,
Elton Santos,
Aaron Lindenberg,
Dmitry Smirnov,
Luis Balicas
Abstract:
Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in…
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Interlayer excitons, or bound electron-hole pairs whose constituent quasiparticles are located in distinct stacked semiconducting layers, are being intensively studied in heterobilayers of two dimensional semiconductors. They owe their existence to an intrinsic type-II band alignment between both layers that convert these into p-n junctions. Here, we unveil a pronounced interlayer exciton (IX) in heterobilayers of metal monochalcogenides, namely gamma-InSe on epsilon-GaSe, whose pronounced emission is adjustable just by varying their thicknesses given their number of layers dependent direct bandgaps. Time-dependent photoluminescense spectroscopy unveils considerably longer interlayer exciton lifetimes with respect to intralayer ones, thus confirming their nature. The linear Stark effect yields a bound electron-hole pair whose separation d is just (3.6 \pm 0.1) Å with d being very close to dSe = 3.4 Å which is the calculated interfacial Se separation. The envelope of IX is twist angle dependent and describable by superimposed emissions that are nearly equally spaced in energy, as if quantized due to localization induced by the small moiré periodicity. These heterostacks are characterized by extremely flat interfacial valence bands making them prime candidates for the observation of magnetism or other correlated electronic phases upon carrier doping.
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Submitted 15 October, 2022;
originally announced October 2022.
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Energy gap of topological surface states in proximity to a magnetic insulator
Authors:
Jiashu Wang,
Tianyi Wang,
Mykhaylo Ozerov,
Zhan Zhang,
Joaquin Bermejo-Ortiz,
Seul-Ki Bac,
Hoai Trinh,
Maksym Zhukovskyi,
Tatyana Orlova,
Haile Ambaye,
Jong Keum,
Louis-Anne de Vaulchier,
Yves Guldner,
Dmitry Smirnov,
Valeria Lauter,
Xinyu Liu,
Badih A. Assaf
Abstract:
Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topolo…
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Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb1-xSnxSe/EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.
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Submitted 13 September, 2023; v1 submitted 15 July, 2022;
originally announced July 2022.
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Tuning Spin Transport in a Graphene Antiferromagnetic Insulator
Authors:
Petr Stepanov,
Dmitry L. Shcherbakov,
Shi Che,
Marc W. Bockrath,
Yafis Barlas,
Dmitry Smirnov,
Kenji Watanabe,
Takashi Taniguchi,
Roger K. Lake,
Chun Ning Lau
Abstract:
Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an…
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Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented tuneability of spin-polarization and charge carrier density in QH edge states. Here, using gate-controlled QH edges as spin-dependent injectors and detectors in an all-graphene electrical circuit, for the first time we demonstrate a selective tuning of ambipolar spin transport through graphene $ν$=0 AFMIs. By modulating polarities of the excitation bias, magnetic fields, and charge carriers that host opposite chiralities, we show that the difference between spin chemical potentials of adjacent edge channels in the spin-injector region is crucial in tuning spin-transport observed across graphene AFMI. We demonstrate that non-local response vanishes upon reversing directions of the co-propagating edge channels when the spin-filters in our devices are no longer selective for a particular spin-polarization. Our results establish a versatile set of methods to tune pure spin transport via an anti-ferromagnetic media and open a pathway to explore their applications for a broad field of antiferromagnetic spintronics research.
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Submitted 25 May, 2022;
originally announced May 2022.
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Valley-magnetophonon resonance for interlayer excitons
Authors:
D. S. Smirnov,
J. Holler,
M. Kempf,
J. Zipfel,
P. Nagler,
M. V. Ballottin,
A. A. Mitioglu,
A. Chernikov,
P. C. M. Christianen,
C. Schüller,
T. Korn
Abstract:
Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magn…
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Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Tesla for H-type and R-type stacking configurations despite their vastly different excitonic energy splittings. As a microscopic mechanism of the hole intervalley scattering we identify the scattering with chiral TA phonons of MoSe$_2$ between excitonic states mixed by the long-range electron hole exchange interaction.
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Submitted 6 May, 2022;
originally announced May 2022.
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Optical measurement of electron spins in quantum dots: Quantum Zeno effects
Authors:
N. V. Leppenen,
D. S. Smirnov
Abstract:
We describe the effects of the quantum back action under continuous optical measurement of electron spins in quantum dots. We consider the system excitation by elliptically polarized light close to the trion resonance, which allows for the simultaneous spin orientation and measurement. We microscopically demonstrate that the nuclei-induced spin relaxation can be both suppressed and accelerated by…
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We describe the effects of the quantum back action under continuous optical measurement of electron spins in quantum dots. We consider the system excitation by elliptically polarized light close to the trion resonance, which allows for the simultaneous spin orientation and measurement. We microscopically demonstrate that the nuclei-induced spin relaxation can be both suppressed and accelerated by the continuous spin measurement due to the quantum Zeno and anti-Zeno effects, respectively. Our theoretical predictions can be directly compared with the future experimental results and straightforwardly generalized for the pump-probe experiments.
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Submitted 28 February, 2022;
originally announced February 2022.
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Spin noise in birefringent and inhomogeneous media
Authors:
V. O. Kozlov,
N. S. Kuznetsov,
D. S. Smirnov,
I. I. Ryzhov,
G. G. Kozlov,
V. S. Zapasskii
Abstract:
It is known that linear birefringence of the medium essentially hinders measuring the Faraday effect. For this reason, optically anisotropic materials have never been considered as objects of the Faraday-rotation-based spin noise spectroscopy (SNS). We show, both theoretically and experimentally, that strong optical anisotropy that may badly suppress the regular Faraday rotation of the medium, pra…
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It is known that linear birefringence of the medium essentially hinders measuring the Faraday effect. For this reason, optically anisotropic materials have never been considered as objects of the Faraday-rotation-based spin noise spectroscopy (SNS). We show, both theoretically and experimentally, that strong optical anisotropy that may badly suppress the regular Faraday rotation of the medium, practically does not affect the measurement of the spatially uncorrelated spin fluctuations. An important consequence of this result is that the Faraday-rotation noise should be also insensitive to spatially nonuniform birefringence, which makes the SNS applicable to a wide class of optically anisotropic and inhomogeneous materials. We also show that the birefringent media provide additional opportunity to measure spatial spin correlations. Results of the experimental measurements of the spin-noise spectra performed on 4$f$--4$f$ transitions of Nd$^{3+}$ ions in the CaWO$_4$ and LiYF$_4$ crystals well agree with the theory.
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Submitted 24 January, 2022;
originally announced January 2022.
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Giant $g$-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices
Authors:
Yuxuan Jiang,
Maksim Ermolaev,
Gela Kipshidze,
Seongphill Moon,
Mykhaylo Ozerov,
Dmitry Smirnov,
Zhigang Jiang,
Sergey Suchalkin
Abstract:
Realizing a large Landé $g$-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of $g\approx 104$, twice larger than that in bulk InSb, and fully spin-polarized states at…
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Realizing a large Landé $g$-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of $g\approx 104$, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the $g$-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward $g$-factor engineering in semiconductor structures.
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Submitted 3 July, 2022; v1 submitted 6 January, 2022;
originally announced January 2022.
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Light sources with bias tunable spectrum based on van der Waals interface transistors
Authors:
Hugo Henck,
Diego Mauro,
Daniil Domaretskiy,
Marc Philippi,
Shahriar Memaran,
Wenkai Zheng,
Zhengguang Lu,
Dmitry Shcherbakov,
Chun Ning Lau,
Dmitry Smirnov,
Luis Balicas,
Kenji Watanabe,
Vladimir I. Fal'ko,
Ignacio Gutiérrez-Lezama,
Nicolas Ubrig,
Alberto F. Morpurgo
Abstract:
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broa…
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Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Controlling the spectrum of the emitted light electrically, by simply acting on the device bias conditions, is an important goal with potential technological repercussions. However, identifying a material platform enabling broad electrical tuning of the spectrum of electroluminescent devices remains challenging. Here, we propose light-emitting field-effect transistors based on van der Waals interfaces of atomically thin semiconductors as a promising class of devices to achieve this goal. We demonstrate that large spectral changes in room-temperature electroluminescence can be controlled both at the device assembly stage -- by suitably selecting the material forming the interfaces -- and on-chip, by changing the bias to modify the device operation point. Even though the precise relation between device bias and kinetics of the radiative transitions remains to be understood, our experiments show that the physical mechanism responsible for light emission is robust, making these devices compatible with simple large areas device production methods.
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Submitted 8 July, 2022; v1 submitted 4 January, 2022;
originally announced January 2022.
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Correlations in the Electronic Structure of van der Waals NiPS$_3$ Crystals: An X-Ray Absorption and Resonant Photoelectron Spectroscopy Study
Authors:
Mouhui Yan,
Yichen Jin,
Zhicheng Wu,
Arshak Tsaturyan,
Anna Makarova,
Dmitry Smirnov,
Elena Voloshina,
Yuriy Dedkov
Abstract:
The electronic structure of high-quality van der Waals NiPS$_3$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES) in combination with density functional theory (DFT) approach. The experimental spectroscopic methods, being element specific, allow to discriminate between atomic contributions in the valence and conduction band…
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The electronic structure of high-quality van der Waals NiPS$_3$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES) in combination with density functional theory (DFT) approach. The experimental spectroscopic methods, being element specific, allow to discriminate between atomic contributions in the valence and conduction band density of states and give direct comparison with the results of DFT calculations. Analysis of the NEXAFS and ResPES data allows to identify the NiPS$_3$ material as a charge-transfer insulator. Obtained spectroscopic and theoretical data are very important for the consideration of possible correlated-electron phenomena in such transition-metal layered materials, where the interplay between different degrees of freedom for electrons defines their electronic properties, allowing to understand their optical and transport properties and to propose further possible applications in electronics, spintronics and catalysis.
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Submitted 22 December, 2021;
originally announced December 2021.
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Topological Quasi-2D Semimetal Co$_3$Sn$_2$S$_2$: Insights To Electronic Structure From NEXAFS and Resonant Photoelectron Spectroscopy
Authors:
Mouhui Yan,
Yichen Jin,
Xiaofei Hou,
Yanfeng Guo,
Arshak Tsaturyan,
Anna Makarova,
Dmitry Smirnov,
Yuriy Dedkov,
Elena Voloshina
Abstract:
The electronic structure of the natural topological semimetal Co$_3$Sn$_2$S$_2$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES). Although, the significant increase of the Co\,$3d$ valence band emission is observed at the Co\,$2p$ absorption edge in the ResPES experiments, the spectral weight at these photon energies is do…
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The electronic structure of the natural topological semimetal Co$_3$Sn$_2$S$_2$ crystals was studied using near-edge x-ray absorption spectroscopy (NEXAFS) and resonant photoelectron spectroscopy (ResPES). Although, the significant increase of the Co\,$3d$ valence band emission is observed at the Co\,$2p$ absorption edge in the ResPES experiments, the spectral weight at these photon energies is dominated by the normal Auger contribution. This observation indicates the delocalised character of photoexcited Co\,$3d$ electrons and is supported by the first-principle calculations. Our results on the investigations of the element- and orbital-specific electronic states near the Fermi level of Co$_3$Sn$_2$S$_2$ are of importance for the comprehensive description of the electronic structure of this materials, which is significant for future applications of this material in different areas of science and technology, including catalysis and water splitting applications.
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Submitted 22 December, 2021;
originally announced December 2021.
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Weyl Fermion Magneto-Electrodynamics and Ultra-low Field Quantum Limit in TaAs
Authors:
Zhengguang Lu,
Patrick Hollister,
Mykhaylo Ozerov,
Seongphill Moon,
Eric D. Bauer,
Filip Ronning,
Dmitry Smirnov,
Long Ju,
B. J. Ramshaw
Abstract:
Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. TaAs is the prototypical example, where 24 Weyl points and 8 trivial Fermi surfaces make the interpretation of any experiment in terms of band topology ambiguous. We report magneto-infrared reflection spectroscopy measure…
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Topological semimetals are predicted to exhibit unconventional electrodynamics, but a central experimental challenge is singling out the contributions from the topological bands. TaAs is the prototypical example, where 24 Weyl points and 8 trivial Fermi surfaces make the interpretation of any experiment in terms of band topology ambiguous. We report magneto-infrared reflection spectroscopy measurements on TaAs. We observed sharp inter-Landau level transitions from a single pocket of Weyl Fermions in magnetic fields as low as 0.4 tesla. We determine the W2 Weyl point to be 8.3 meV below the Fermi energy, corresponding to a quantum limit - the field required to reach the lowest LL - of 0.8 Tesla - unprecedentedly low for Weyl Fermions. LL spectroscopy allows us to isolate these Weyl Fermions from all other carriers in TaAs and our result provides a new way for directly exploring the more exotic quantum phenomena in Weyl semimetals, such as the chiral anomaly.
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Submitted 11 November, 2021;
originally announced November 2021.
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Nuclear spin dynamics and noise in anisotropic large box model
Authors:
A. V. Shumilin,
D. S. Smirnov
Abstract:
We consider the central spin model in the box approximation taking into account external magnetic field and anisotropy of the hyperfine interaction. From the exact Hamiltonian diagonalization we obtain analytical expressions for the nuclear spin dynamics in the limit of many nuclear spins. We predict the nuclear spin precession in zero magnetic field for the case of anisotropic interaction between…
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We consider the central spin model in the box approximation taking into account external magnetic field and anisotropy of the hyperfine interaction. From the exact Hamiltonian diagonalization we obtain analytical expressions for the nuclear spin dynamics in the limit of many nuclear spins. We predict the nuclear spin precession in zero magnetic field for the case of anisotropic interaction between electron and nuclear spins. We calculate and describe the nuclear spin noise spectra in the thermodynamic equilibrium. The obtained results can be used for the analysis of the nuclear spin induced current fluctuations in organic semiconductors.
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Submitted 8 November, 2021;
originally announced November 2021.
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Magneto-transport evidence for strong topological insulator phase in ZrTe5
Authors:
Jingyue Wang,
Yuxuan Jiang,
Tianhao Zhao,
Zhiling Dun,
Anna L. Miettinen,
Xiaosong Wu,
Martin Mourigal,
Haidong Zhou,
Wei Pan,
Dmitry Smirnov,
Zhigang Jiang
Abstract:
The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicat…
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The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe$_5$), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.
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Submitted 2 November, 2021;
originally announced November 2021.
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Dynamic Valley Polarization in Moire Quantum Dots
Authors:
D. S. Smirnov
Abstract:
We describe the effects of the crossing of the exciton levels in moire quantum dots in external magnetic field. We demonstrate that the unpolarized light can create significant dynamic valley polarization of interlayer excitons in the conditions where the Zeeman energy is much smaller than the thermal energy. The angular momentum is gained by the excitons from the nuclear spin fluctuations. In the…
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We describe the effects of the crossing of the exciton levels in moire quantum dots in external magnetic field. We demonstrate that the unpolarized light can create significant dynamic valley polarization of interlayer excitons in the conditions where the Zeeman energy is much smaller than the thermal energy. The angular momentum is gained by the excitons from the nuclear spin fluctuations. In the $n$-type moire quantum dots for the typical experimental parameters, the unpolarized light can lead to the complete valley polarization of the resident electrons.
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Submitted 2 September, 2021;
originally announced September 2021.
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Current Induced Hole Spin Polarization in Quantum Dot via Chiral Quasi Bound State
Authors:
V. N. Mantsevich,
D. S. Smirnov
Abstract:
We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to the quantum wire with heavy holes is enough to creat…
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We put forward a mechanism for current induced spin polarization for a hole in a quantum dot side-coupled to a quantum wire, that is based on the spin-orbit splitting of the valence band. We predict that in a stark contrast with the traditional mechanisms based on the linear in momentum spin-orbit coupling, an exponentially small bias applied to the quantum wire with heavy holes is enough to create the 100% spin polarization of a localized light hole. Microscopically, the effect is related with the formation of chiral quasi bound states and the spin dependent tunneling of holes from the quantum wire to the quantum dot. This novel current induced spin polarization mechanism is equally relevant for the GaAs, Si and Ge based semiconductor nanostructures.
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Submitted 14 July, 2021;
originally announced July 2021.
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Dynamic polarization of electron spins in indirect band gap (In,Al)As/AlAs quantum dots in weak magnetic field: experiment and theory
Authors:
T. S. Shamirzaev,
A. V. Shumilin,
D. S. Smirnov,
J. Rautert,
D. R. Yakovlev,
M. Bayer
Abstract:
A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of a few millitesla. In this paper we demonstrate experimentally and theoretically that the dynamic electron spin polarization degree changes sign as a function o…
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A novel spin orientation mechanism - dynamic electron spin polarization has been recently suggested in Phys. Rev. Lett. $\mathbf{125}$, 156801 (2020). It takes place for unpolarized optical excitation in weak magnetic fields of the order of a few millitesla. In this paper we demonstrate experimentally and theoretically that the dynamic electron spin polarization degree changes sign as a function of time, strength of the applied magnetic field and its direction. The studies are performed on indirect band-gap (In,Al)As/AlAs quantum dots and their results are explained in the framework of a theoretical model developed for our experimental setting.
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Submitted 31 May, 2021;
originally announced June 2021.
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Resonant spin amplification in Faraday geometry
Authors:
P. Schering,
E. Evers,
V. Nedelea,
D. S. Smirnov,
E. A. Zhukov,
D. R. Yakovlev,
M. Bayer,
G. S. Uhrig,
A. Greilich
Abstract:
We demonstrate the realization of the resonant spin amplification (RSA) effect in Faraday geometry where a magnetic field is applied parallel to the optically induced spin polarization so that no RSA is expected. However, model considerations predict that it can be realized for a central spin interacting with a fluctuating spin environment. As a demonstrator, we choose an ensemble of singly-charge…
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We demonstrate the realization of the resonant spin amplification (RSA) effect in Faraday geometry where a magnetic field is applied parallel to the optically induced spin polarization so that no RSA is expected. However, model considerations predict that it can be realized for a central spin interacting with a fluctuating spin environment. As a demonstrator, we choose an ensemble of singly-charged (In,Ga)As/GaAs quantum dots, where the resident electron spins interact with the surrounding nuclear spins. The observation of RSA in Faraday geometry requires intense pump pulses with a high repetition rate and can be enhanced by means of the spin-inertia effect. Potentially, it provides the most direct and reliable tool to measure the longitudinal $g$ factor of the charge carriers.
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Submitted 20 May, 2021; v1 submitted 4 February, 2021;
originally announced February 2021.
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Landau quantization in tilted Weyl semimetals with broken symmetry
Authors:
Luojia Zhang,
Yuxuan Jiang,
Dmitry Smirnov,
Zhigang Jiang
Abstract:
Broken symmetry and tilting effects are ubiquitous in Weyl semimetals (WSMs). Therefore, it is crucial to understand their impacts on the materials' electronic and optical properties. Here, using a realistic four-band model for WSMs that incorporates both the symmetry breaking and tilting effects, we study its Landau quantization and the associated magneto-absorption spectrum. We show that the Lan…
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Broken symmetry and tilting effects are ubiquitous in Weyl semimetals (WSMs). Therefore, it is crucial to understand their impacts on the materials' electronic and optical properties. Here, using a realistic four-band model for WSMs that incorporates both the symmetry breaking and tilting effects, we study its Landau quantization and the associated magneto-absorption spectrum. We show that the Landau levels in tilted Weyl bands can be obtained by considering a non-tilt Hamiltonian through Lorentz boost. However, broken symmetry effects can generate an additional term in the Hamiltonian, which equivalently leads to band reconstruction. Our work provides a more realistic view of the magnetic field response of WSMs that shall be taken into account in relevant future device applications.
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Submitted 14 March, 2021; v1 submitted 29 December, 2020;
originally announced December 2020.