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Single-photon detection enabled by negative differential conductivity in moiré superlattices
Authors:
Krystian Nowakowski,
Hitesh Agarwal,
Sergey Slizovskiy,
Robin Smeyers,
Xueqiao Wang,
Zhiren Zheng,
Julien Barrier,
David Barcons Ruiz,
Geng Li,
Riccardo Bertini,
Matteo Ceccanti,
Iacopo Torre,
Bert Jorissen,
Antoine Reserbat-Plantey,
Kenji Watanabe,
Takashi Taniguchi,
Lucian Covaci,
Milorad V. Milošević,
Vladimir Fal'ko,
Pablo Jarillo-Herrero,
Roshan Krishna Kumar,
Frank H. L. Koppens
Abstract:
Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive non-equilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal-boron nitride superlattices, we engineer negative differential condu…
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Detecting individual light quanta is essential for quantum information, space exploration, advanced machine vision, and fundamental science. Here, we introduce a novel single photon detection mechanism using highly photosensitive non-equilibrium electron phases in moiré materials. Using tunable bands in bilayer graphene/hexagonal-boron nitride superlattices, we engineer negative differential conductance and a sensitive bistable state capable of detecting single photons. Operating in this regime, we demonstrate single-photon counting at mid-infrared (11.3 microns) and visible wavelengths (675 nanometres) and temperatures up to 25 K. This detector offers new prospects for broadband, high-temperature quantum technologies with CMOS compatibility and seamless integration into photonic integrated circuits (PICs). Our analysis suggests the mechanism underlying our device operation originates from negative differential velocity, and represents an important milestone in the field of high-bias transport in two-dimensional moiré quantum materials.
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Submitted 19 May, 2025;
originally announced May 2025.
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Machine-Learning Interatomic Potential for Twisted Hexagonal Boron Nitride: Accurate Structural Relaxation and Emergent Polarization
Authors:
Wilson Nieto Luna,
Robin Smeyers,
Cem Sevik,
Lucian Covaci,
Milorad V. Milošević
Abstract:
The emerging ferroelectric properties of two-dimensional (2D) heterostructures are at the forefront of science and prospective technology. In moiré bilayers, twisting or heterostructuring causes local atomic reconstruction, which even at picometer scale, can lead to pronounced ferroelectric polarization. Accurately determining this reconstruction utilizing ab initio methods is unfeasible for the r…
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The emerging ferroelectric properties of two-dimensional (2D) heterostructures are at the forefront of science and prospective technology. In moiré bilayers, twisting or heterostructuring causes local atomic reconstruction, which even at picometer scale, can lead to pronounced ferroelectric polarization. Accurately determining this reconstruction utilizing ab initio methods is unfeasible for the relevant system sizes, but modern machine-learning interatomic potentials offer a viable solution. Here, we present the Gaussian Approximation Potential for twisted hexagonal boron nitride (hBN) layers validated against ab initio datasets. This approach enables the precise analysis of their structural properties, which is particularly relevant at small twist angles. We couple the structural information to a tight-binding model based on accurate interatomic positioning, and determine the twist-dependent polarization, yielding results that closely align with previous experimental findings - even at room temperature. This methodology enables further studies that are unattainable otherwise and is transferable to other 2D materials of interest.
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Submitted 14 March, 2025;
originally announced March 2025.
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Elastic Screening of Pseudogauge Fields in Graphene
Authors:
Christophe De Beule,
Robin Smeyers,
Wilson Nieto Luna,
E. J. Mele,
Lucian Covaci
Abstract:
Lattice deformations in graphene couple to the low-energy electronic degrees of freedom as effective scalar and gauge fields. Using molecular dynamics simulations, we show that the optical component of the displacement field, i.e., the relative motion of different sublattices, contributes at equal order as the acoustic component and effectively screens the pseudogauge fields. In particular, we con…
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Lattice deformations in graphene couple to the low-energy electronic degrees of freedom as effective scalar and gauge fields. Using molecular dynamics simulations, we show that the optical component of the displacement field, i.e., the relative motion of different sublattices, contributes at equal order as the acoustic component and effectively screens the pseudogauge fields. In particular, we consider twisted bilayer graphene and corrugated monolayer graphene. In both cases, optical lattice displacements significantly reduce the overall magnitude of the pseudomagnetic fields. For corrugated graphene, optical contributions also reshape the pseudomagnetic field and significantly modify the electronic bands near charge neutrality. Previous studies based on continuum elasticity, which ignores this effect, have therefore systematically overestimated the strength of the strain-induced pseudomagnetic field. Our results have important consequences for the interpretation of experiments and design of straintronic applications.
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Submitted 10 April, 2025; v1 submitted 3 September, 2024;
originally announced September 2024.
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Strong gate-tunability of flat bands in bilayer graphene due to moiré encapsulation between hBN monolayers
Authors:
Robin Smeyers,
Lucian Covaci,
Milorad V. Milošević
Abstract:
When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moiré pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moiré stacking may offer even richer benefits. Using advanced tight-binding simulations on atomistically-relaxed heterostructures, here we show that the gap at the secondary Dirac point can…
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When using hexagonal boron-nitride (hBN) as a substrate for graphene, the resulting moiré pattern creates secondary Dirac points. By encapsulating a multilayer graphene within aligned hBN sheets the controlled moiré stacking may offer even richer benefits. Using advanced tight-binding simulations on atomistically-relaxed heterostructures, here we show that the gap at the secondary Dirac point can be opened in selected moiré-stacking configurations, and is independent of any additional vertical gating of the heterostructure. On the other hand, gating can broadly tune the gap at the principal Dirac point, and may thereby strongly compress the first moiré mini-band in width against the moiré-induced gap at the secondary Dirac point. We reveal that in hBN-encapsulated bilayer graphene this novel mechanism can lead to isolated bands flatter than 10~meV under moderate gating, hence presenting a convenient pathway towards electronically-controlled strongly-correlated states on demand.
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Submitted 2 February, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
