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Novel structures of Gallenene intercalated in epitaxial Graphene
Authors:
Emanuele Pompei,
Katarzyna Skibińska,
Giulio Senesi,
Ylea Vlamidis,
Antonio Rossi,
Stiven Forti,
Camilla Coletti,
Fabio Beltram,
Lucia Sorba,
Stefan Heun,
Stefano Veronesi
Abstract:
The creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the s…
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The creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.
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Submitted 8 May, 2025;
originally announced May 2025.
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Biharmonic-drive tunable Josephson diode
Authors:
L. Borgongino,
R. Seoane Souto,
A. Paghi,
G. Senesi,
K. Skibinska,
L. Sorba,
F. Giazotto,
E. Strambini
Abstract:
The superconducting diode effect has garnered significant interest due to its prospective applications in cryogenic electronics and computing, characterized by zero resistance and no energy dissipation. This phenomenon has been demonstrated across various superconducting platforms, which typically necessitate unconventional materials with broken spatial symmetries or external magnetic fields, posi…
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The superconducting diode effect has garnered significant interest due to its prospective applications in cryogenic electronics and computing, characterized by zero resistance and no energy dissipation. This phenomenon has been demonstrated across various superconducting platforms, which typically necessitate unconventional materials with broken spatial symmetries or external magnetic fields, posing scalability and integration challenges. This work introduces an innovative method to realize the superconducting diode effect by disrupting spatio-temporal symmetries in a conventional Josephson junction utilizing a biharmonic AC drive signal. We achieve wireless modulation of the diode's polarity and efficiency with an antenna. Our findings indicate a diode efficiency reaching the ideal $100\%$ over a broad frequency range, with a temperature resilience up to 800 mK, and efficient AC signal rectification. This versatile and platform-independent superconducting diode signifies a promising component for advancing future superconducting digital electronics, including efficient logic gates, ultra-fast switches, and dynamic half-wave supercurrent rectifiers.
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Submitted 11 April, 2025;
originally announced April 2025.
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Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
Authors:
Giulio Senesi,
Katarzyna Skibinska,
Alessandro Paghi,
Gaurav Shukla,
Francesco Giazotto,
Fabio Beltram,
Stefan Heun,
Lucia Sorba
Abstract:
Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.…
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Indium Arsenide is a III-V semiconductor with low electron effective mass, a small band gap, strong spin-orbit coupling, and a large g-factor. These properties and its surface Fermi level pinned in the conduction band make InAs a good candidate for developing superconducting solid-state quantum devices. Here, we report the epitaxial growth of very thin InAs layers with thicknesses ranging from 12.5 nm to 500 nm grown by Molecular Beam Epitaxy on InxAl1-xAs metamorphic buffers. Differently than InAs substrates, these buffers have the advantage of being insulating at cryogenic temperatures, which allows for multiple device operations on the same wafer and thus making the approach scalable. The structural properties of the InAs layers were investigated by high-resolution X-ray diffraction, demonstrating the high crystal quality of the InAs layers. Furthermore, their transport properties, such as total and sheet carrier concentration, sheet resistance, and carrier mobility, were measured in the van der Pauw configuration at room temperature. A simple conduction model was employed to quantify the surface, bulk, and interface contributions to the overall carrier concentration and mobility.
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Submitted 23 January, 2025;
originally announced January 2025.
