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Structure-Property Correlations in Sb, Ge, and Ga Doped AlFe$_2$B$_2$ for Magnetocaloric Applications
Authors:
R. Preyadarshini,
S. Kavita,
Ashutosh Kumar,
D. Sivaprahasam
Abstract:
This study investigates the effects of Sb, Ge, and Ga doping in AlFe$_2$B$_2$ on magnetic and magneto-caloric properties. Samples of AlFe$_2$B$_2$ and AlFe$_{1.9}$M$_{0.1}$B$_2$ (M= Ge, Ga and Sb) with 20\% excess Al were synthesized by arc melting, and the powder processed were investigated for their phase constituents, microstructure, magnetic and magneto-caloric effect. The parent compounds pre…
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This study investigates the effects of Sb, Ge, and Ga doping in AlFe$_2$B$_2$ on magnetic and magneto-caloric properties. Samples of AlFe$_2$B$_2$ and AlFe$_{1.9}$M$_{0.1}$B$_2$ (M= Ge, Ga and Sb) with 20\% excess Al were synthesized by arc melting, and the powder processed were investigated for their phase constituents, microstructure, magnetic and magneto-caloric effect. The parent compounds prepared showed the AlFe$_2$B$_2$ phase with a FeB secondary phase. However, in Sb and Ga-doped samples, an additional impurity phase, Al$_{13}$Fe$_4$, was observed apart from FeB, while in Ge-doped, only the AlB$_2$ impurity phase was present. The Curie temperature of AlFe$_2$B$_2$ is 277 K, increasing with Sb, Ge, and Ga doping to 287\,K, 297\,K, and 296\,K, respectively. The magnetization ($M$) is also higher with Ge and Ga addition in the 100-300\,K range; however, with Sb doping, the $M$ decreases significantly compared to parent AlFe$_2$B$_2$. The magnetic entropy change under 2\,T reached 2.93 JKg$^{-1}$K$^{-1}$ near 274\,K in AlFe$_2$B$_2$, which decreases to 2.53 JKg$^{-1}$K$^{-1}$ and 1.92 JKg$^{-1}$K$^{-1}$ with Ge and Ga, respectively. With Sb doping, the MC change was affected dramatically to 0.32 JKg$^{-1}$K$^{-1}$. However, the relative cooling power of Ge doped is the same as that of parent AlFe$_2$B$_2$. This research advances the understanding of the relationship between doping elements and magnetic properties in AlFe$_2$B$_2$ and opens pathways for designing magneto-caloric materials with tailored magnetic characteristics.
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Submitted 27 June, 2025;
originally announced June 2025.
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Structural and Thermoelectric Properties of Al$_{1+x}$Fe$_{2-y}$M$_y$B$_2$ (M=Ag, Ni, Sb, Ga, and Ge) Intermetallic Borides
Authors:
D. Sivaprahasam,
R. Preyadarshini,
Ashutosh Kumar
Abstract:
AlFe$_2$B$_2$, a ternary transition metal boride doped with Ag, Ni, Sb, Ga, and Ge was investigated for the phase constituents, microstructure, and thermoelectric properties. The parent compound with 20\% excess Al (Al$_{1.2}$Fe$_2$B$_2$) prepared by vacuum arc melting contains orthorhombic AlFe$_2$B$_2$ and FeB upon doping form additional phases such as Ag$_5$Al, AlNi$_3$, Al$_3$Ni$_2$, AlSb, and…
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AlFe$_2$B$_2$, a ternary transition metal boride doped with Ag, Ni, Sb, Ga, and Ge was investigated for the phase constituents, microstructure, and thermoelectric properties. The parent compound with 20\% excess Al (Al$_{1.2}$Fe$_2$B$_2$) prepared by vacuum arc melting contains orthorhombic AlFe$_2$B$_2$ and FeB upon doping form additional phases such as Ag$_5$Al, AlNi$_3$, Al$_3$Ni$_2$, AlSb, and AlB$_2$. The structural parameters of the AlFe$_2$B$_2$ phase in Ag, Ni, and Sb-doped samples are nearly the same as the un-doped one. The lattice parameters and cell volume increase noticeably in Ga and Ge-doped compounds. The Ga-doped sample shows only FeB as a secondary phase; however, the AlB$_2$ phase is observed in Ge-doped AlFe$_2$B$_2$. The microstructure investigated in FEG-SEM with EDS shows the AlFe$_2$B$_2$ matrix is chemically homogenous in all samples, except the Ga-doped one, with uniformly distributed single or multiple secondary phases. The DSC-TG results show that all the dopants decrease the AlFe$_2$B$_2$ phase peritectic decomposition reaction temperature, indicating the structure destabilizes. The thermoelectric properties measured show that AlFe$_2$B$_2$ is an n-type compound with electrical conductivity in the range of 0.35-0.46$\times$10$^6$ S/m. The addition of Ag, Ni, Ga, and Ge marginally alters the Seebeck and electrical conductivity. The noticeable improvement in Seebeck coefficient and with negligible change in electrical conductivity resulted in a highest power factor of 0.4 mW/mK$^2$ for Sb-doped sample. The thermal conductivity of AlFe$_2$B$_2$, which is in the range of 6.4-9.1 W/m-K between 300 to 773\,K, decreases with Sb doping to 5.2-8.5 W/m-K resulting in a maximum zT of 0.04 at 773K.
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Submitted 16 October, 2024;
originally announced October 2024.
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Effect of crystal field engineering and Fermi level optimization on thermoelectric properties of Ge$_{1.01}$Te: Experimental investigation and theoretical insight
Authors:
Ashutosh Kumar,
Preeti Bhumla,
D. Sivaprahasam,
Saswata Bhattacharya,
Nita Dragoe
Abstract:
This study shows a method of enhancing the thermoelectric properties of GeTe-based materials by Ti and Bi co-doping on cation sites along with self-doping with Ge via simultaneous optimization of electronic (via crystal field engineering, and precise Fermi level optimization) and thermal (via point-defect scattering) transport properties. The pristine GeTe possesses high carrier concentration (…
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This study shows a method of enhancing the thermoelectric properties of GeTe-based materials by Ti and Bi co-doping on cation sites along with self-doping with Ge via simultaneous optimization of electronic (via crystal field engineering, and precise Fermi level optimization) and thermal (via point-defect scattering) transport properties. The pristine GeTe possesses high carrier concentration ($n$) due to intrinsic Ge vacancies, low Seebeck coefficient ($α$), and high thermal conductivity ($κ$). The Ge vacancy optimization and crystal field engineering results in an enhanced $α$ via excess Ge and Ti doping, which is further improved by band structure engineering through Bi doping. As a result of improved $α$ and optimized Fermi level (carrier concentration), an enhanced power factor ($α^2σ$) is obtained for Ti--Bi co-doped Ge$_{1.01}$Te. These experimental results are also evidenced by theoretical calculations of band structure, and thermoelectric parameters using density functional theory and Boltztrap calculations, respectively. A significant reduction in the phonon thermal conductivity ($κ_{ph}$) from $\sim$ 3.5 W.m$^{-1}$.K$^{-1}$ to $\sim$ 1.06 W.m$^{-1}$.K$^{-1}$ at 300\,K for Ti--Bi co-doping in GeTe, attributed to point-defect scattering due to mass and strain field fluctuation, in line with the Debye-Callaway model. The phonon dispersion calculations show a decreasing group velocity in Ti--Bi co-doped GeTe, supporting the obtained reduced $κ_{ph}$. The strategies used in the present study can significantly increase the effective mass, optimize the carrier concentration, and decrease phonon thermal conductivity while achieving an impressive maximum zT value of 1.75 at 773\,K and average zT (zT$_{av}$) of 1.03 for Ge$_{0.91}$Ti$_{0.02}$Bi$_{0.08}$Te over a temperature range of 300-773\,K.
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Submitted 30 January, 2023;
originally announced January 2023.
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Thermoelectric properties of Sb doped AlFe$_2$B$_2$
Authors:
Duraisamy Sivaprahasam,
Ashutosh Kumar,
Babu Jayachandran,
Raghavan Gopalan
Abstract:
In this work, thermoelectric properties of Al$_{1.2}$Fe$_2$B$_2$ compound were investigated over a temperature range from 300\,K to 773\,K. Al$_{1.2}$Fe$_2$B$_2$ compound was produced by vacuum arc melting of Al, Fe, and B followed by annealing at 1323 K under argon atmosphere. The annealed ingots were subsequently crushed into powder and hot pressed at 1273 K under vacuum. The hot-pressed alloy p…
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In this work, thermoelectric properties of Al$_{1.2}$Fe$_2$B$_2$ compound were investigated over a temperature range from 300\,K to 773\,K. Al$_{1.2}$Fe$_2$B$_2$ compound was produced by vacuum arc melting of Al, Fe, and B followed by annealing at 1323 K under argon atmosphere. The annealed ingots were subsequently crushed into powder and hot pressed at 1273 K under vacuum. The hot-pressed alloy predominantly contained Al$_{1.2}$Fe$_2$B$_2$ phase with a small fraction of FeB, which decreases further upon 0.1 \% Sb doping in Al$_{1.2}$Fe$_2$B$_2$. The pristine Al$_{1.2}$Fe$_2$B$_2$ exhibits n-type conductivity with a maximum figure of merit (zT) of 0.03 at 773\,K. The Sb doping improves the Seebeck coefficient at high temperatures and also reduces the phonon thermal conductivity across the temperature range studied. The decrease in phonon thermal conductivity is attributed to the point-defect phonon scattering due to mass fluctuation between the Fe and Sb atoms. The 0.1 at\% Sb doping at the Fe site results in improved zT of 0.056 at 773\,K in spite of its limited dissolution in Al$_{1.2}$Fe$_2$B$_2$ and forms FeSb$_2$ secondary phase.
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Submitted 2 December, 2022;
originally announced December 2022.
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Improved Thermoelectric Properties in (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 Composite
Authors:
Ashutosh Kumar,
D. Sivaprahasam,
Ajay D. Thakur
Abstract:
A high Seebeck coefficient (S), large electrical conductivity (σ), and reduced thermal conductivity (κ) are required to achieve a high figure-of-merit (zT) in an ideal thermoelectric (TE) system, which is challenging in a single system due to the interdependence of TE parameters. Composite approach is promising to manipulate the TE parameters. In this study, TE properties of (1-x)LaCoO3/(x)La0.7Sr…
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A high Seebeck coefficient (S), large electrical conductivity (σ), and reduced thermal conductivity (κ) are required to achieve a high figure-of-merit (zT) in an ideal thermoelectric (TE) system, which is challenging in a single system due to the interdependence of TE parameters. Composite approach is promising to manipulate the TE parameters. In this study, TE properties of (1-x)LaCoO3/(x)La0.7Sr0.3CoO3 (0.00 \leq x \leq 0.05) composite is discussed. The structural analysis confirms individual phases in the composite, which is further supported by electron microscopy analysis. The x-ray photoelectron analysis indicates that oxygen vacancies (VO) are present in the parent LaCoO3 system and increase with the addition of La0.7Sr0.3CoO3 (LSCO) in the composite. The increase in VO raises the degenerate states of cobalt and hence improves S in the composites. Temperature variation in S and σ are consistent with the spin-state transition and shows the correlation between these two parameters. The reduction in κ and σ with the addition of ball-milled La0.7Sr0.3CoO3 in the composite is attributed to the enhanced phonon-phonon and charge carrier scattering, respectively. A synergistic effect of enhanced S and reduced κ} result in five times improvement in zT of the composite compared to the parent LaCoO3 system at 800 K. This approach also improves the operating temperature for LaCoO3 based systems.
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Submitted 22 July, 2021; v1 submitted 14 July, 2020;
originally announced July 2020.
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Colossal Seebeck coefficient in Aurivillius Phase-Perovskite Oxide Composite
Authors:
Ashutosh Kumar,
D. Sivaprahasam,
Ajay D. Thakur
Abstract:
We propose an inexpensive scalable approach for achieving extremely high values of Seebeck coefficient ($α$) by exploiting the natural superlattice structure in Aurivillius phase oxides. In particular, we report an $α\approx $ 319\,mV/K at 300\,K in a composite of Aurivillius phase compound SrBi$_4$Ti$_4$O$_{15}$ (as a matrix) and a perovskite phase material (e.g., La$_{0.7}$Sr$_{0.3}$MnO$_3$ or,…
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We propose an inexpensive scalable approach for achieving extremely high values of Seebeck coefficient ($α$) by exploiting the natural superlattice structure in Aurivillius phase oxides. In particular, we report an $α\approx $ 319\,mV/K at 300\,K in a composite of Aurivillius phase compound SrBi$_4$Ti$_4$O$_{15}$ (as a matrix) and a perovskite phase material (e.g., La$_{0.7}$Sr$_{0.3}$MnO$_3$ or, La$_{0.7}$Sr$_{0.3}$CoO$_3$ as filler). Such a colossal value of $α$ can be attributed to contributions from the enhanced density of states due to the effective low dimensional character of Bi$_2$O$_2$ layer. The corresponding thermal conductivity ($κ$) and the electrical conductivity ($σ$) lies in the range 0.7 - 1.25 W/m-K and 10 - 100 $μ$S/m, respectively at 300\,K. Attributed to the high $α$ values, such oxide composites can be used as thermopile sensors and highly sensitive bolometric applications. We anticipate that the demonstration of colossal $α$ in oxide composites using a simple synthesis strategy also sets the stage for future material innovations for high temperature thermoelectric applications.
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Submitted 4 September, 2020; v1 submitted 1 July, 2020;
originally announced July 2020.
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Thermoelectric Properties of (1-x)LaCoO$_{3.x}$La$_{0.7}$Sr$_{0.3}$MnO$_3$ Composite
Authors:
Ashutosh Kumar,
Karuna Kumari,
B. Jayachandran,
D. Sivaprahasam,
Ajay D Thakur
Abstract:
We report the thermoelectric (TE) properties of (1-x)LaCoO3.xLa0.7Sr0.3MnO3 (0 < x < 0.10) composite in a temperature range 320-800 K. Addition of La0.7Sr0.3MnO3 to LaCoO3 in small amount (5 weight %) improves the overall Seebeck coefficient (α) at higher temperatures. The electrical conductivity, however, decreases due to a decrease in carrier concentration of the composite. The decrease in elect…
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We report the thermoelectric (TE) properties of (1-x)LaCoO3.xLa0.7Sr0.3MnO3 (0 < x < 0.10) composite in a temperature range 320-800 K. Addition of La0.7Sr0.3MnO3 to LaCoO3 in small amount (5 weight %) improves the overall Seebeck coefficient (α) at higher temperatures. The electrical conductivity, however, decreases due to a decrease in carrier concentration of the composite. The decrease in electrical conductivity of the composite at high temperature may be attributed to the insulating nature of the LSMO above room temperature. Thermal conductivity (\k{appa}) of all the samples increases with an increase in the temperature but decreases with increasing LSMO content. We also report the local variation of the Seebeck coefficient across the composite samples measured using a precision Seebeck measurement system. A maximum value of 0.09 for the figure of merit (ZT) is obtained for 0.95LaCoO3.0.05La0.7Sr0.3MnO3 at 620 K which is significantly higher than the ZT of either of LaCoO3 or La0.7Sr0.3MnO3 at 620 K. This suggests the potential for enhancement of operating temperatures of hitherto well known low-temperature thermoelectric materials through suitable compositing approach.
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Submitted 15 July, 2018;
originally announced July 2018.
