Showing 1–30 of 30 results for author: Sipahigil, A

Long-lived entanglement of a spin-qubit register in silicon photonics

Authors: Hanbin Song, Xueyue Zhang, Lukasz Komza, Niccolo Fiaschi, Yihuang Xiong, Yiyang Zhi, Scott Dhuey, Adam Schwartzberg, Thomas Schenkel, Geoffroy Hautier, Zi-Huai Zhang, Alp Sipahigil

Abstract: Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and a long-lived electron spin in a scalable photonics platform. In this work, we demonstrate the initialization, coherent control, and state readout of a three-qubit regist… ▽ More Color centers provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T center in silicon is an emerging spin-photon interface that combines telecom O-band optical transitions and a long-lived electron spin in a scalable photonics platform. In this work, we demonstrate the initialization, coherent control, and state readout of a three-qubit register based on the electron spin of a T center coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits long spin echo coherence times of $0.41(2)$ ms for the electron spin, $112(12)$ ms for the hydrogen nuclear spin, and $67(7)$ ms for the silicon nuclear spin. We use nuclear-nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of $F=0.77(3)$ and a coherence time of $T^*_2=2.60(8)$ ms. Our results show that T centers can realize a long-lived multi-qubit register with an optical interface in silicon photonics. △ Less

Submitted 21 April, 2025; originally announced April 2025.

Laser-induced spectral diffusion of T centers in silicon nanophotonic devices

Authors: Xueyue Zhang, Niccolo Fiaschi, Lukasz Komza, Hanbin Song, Thomas Schenkel, Alp Sipahigil

Abstract: Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. W… ▽ More Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T center frequency and a probe pulse to measure frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time leads to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral diffusion mechanism for T centers in devices, and inform materials and feedback strategies for indistinguishable photon generation. △ Less

Submitted 11 April, 2025; originally announced April 2025.

Multiplexed color centers in a silicon photonic cavity array

Authors: Lukasz Komza, Xueyue Zhang, Hanbin Song, Yu-Lung Tang, Xin Wei, Alp Sipahigil

Abstract: Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interface… ▽ More Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interfaces. Here, we develop a silicon photonics platform consisting of arrays of bus-coupled cavities. The coupling to a common bus waveguide enables simultaneous access to individually addressable cavity-enhanced T center arrays. We demonstrate frequency-multiplexed operation of two T centers in separate photonic crystal cavities. In addition, we investigate the cavity enhancement of a T center through hybridized modes formed between physically distant cavities. Our results show that bus-coupled arrays of cavity-enhanced color centers could enable efficient on-chip and long-distance entanglement distribution. △ Less

Submitted 28 January, 2025; originally announced January 2025.

Observation of Interface Piezoelectricity in Superconducting Devices on Silicon

Authors: Haoxin Zhou, Eric Li, Kadircan Godeneli, Zi-Huai Zhang, Shahin Jahanbani, Kangdi Yu, Mutasem Odeh, Shaul Aloni, Sinéad Griffin, Alp Sipahigil

Abstract: The evolution of superconducting quantum processors is driven by the need to reduce errors and scale for fault-tolerant computation. Reducing physical qubit error rates requires further advances in the microscopic modeling and control of decoherence mechanisms in superconducting qubits. Piezoelectric interactions contribute to decoherence by mediating energy exchange between microwave photons and… ▽ More The evolution of superconducting quantum processors is driven by the need to reduce errors and scale for fault-tolerant computation. Reducing physical qubit error rates requires further advances in the microscopic modeling and control of decoherence mechanisms in superconducting qubits. Piezoelectric interactions contribute to decoherence by mediating energy exchange between microwave photons and acoustic phonons. Centrosymmetric materials like silicon and sapphire do not display piezoelectricity and are the preferred substrates for superconducting qubits. However, the broken centrosymmetry at material interfaces may lead to piezoelectric losses in qubits. While this loss mechanism was predicted two decades ago, interface piezoelectricity has not been experimentally observed in superconducting devices. Here, we report the observation of interface piezoelectricity at an aluminum-silicon junction and show that it constitutes an important loss channel for superconducting devices. We fabricate aluminum interdigital surface acoustic wave transducers on silicon and demonstrate piezoelectric transduction from room temperature to millikelvin temperatures. We find an effective electromechanical coupling factor of $K^2\approx 2 \times 10^{-5}\%$ comparable to weakly piezoelectric substrates. We model the impact of the measured interface piezoelectric response on superconducting qubits and find that the piezoelectric surface loss channel limits qubit quality factors to $Q\sim10^4-10^8$ for designs with different surface participation ratios and electromechanical mode matching. These results identify electromechanical surface losses as a significant dissipation channel for superconducting qubits, and show the need for heterostructure and phononic engineering to minimize errors in next-generation superconducting qubits. △ Less

Submitted 16 September, 2024; originally announced September 2024.

A Nanomechanical Atomic Force Qubit

Authors: Shahin Jahanbani, Zi-Huai Zhang, Binhan Hua, Kadircan Godeneli, Boris Müllendorff, Xueyue Zhang, Haoxin Zhou, Alp Sipahigil

Abstract: Silicon nanomechanical resonators display ultra-long lifetimes at cryogenic temperatures and microwave frequencies. Achieving quantum control of single-phonons in these devices has so far relied on nonlinearities enabled by coupling to ancillary qubits. In this work, we propose using atomic forces to realize a silicon nanomechanical qubit without coupling to an ancillary qubit. The proposed qubit… ▽ More Silicon nanomechanical resonators display ultra-long lifetimes at cryogenic temperatures and microwave frequencies. Achieving quantum control of single-phonons in these devices has so far relied on nonlinearities enabled by coupling to ancillary qubits. In this work, we propose using atomic forces to realize a silicon nanomechanical qubit without coupling to an ancillary qubit. The proposed qubit operates at 60 MHz with a single-phonon level anharmonicity of 5 MHz. We present a circuit quantum acoustodynamics architecture where electromechanical resonators enable dispersive state readout and multi-qubit operations. The combination of strong anharmonicity, ultrahigh mechanical quality factors, and small footprints achievable in this platform could enable quantum-nonlinear phononics for quantum information processing and transduction. △ Less

Submitted 22 July, 2024; originally announced July 2024.

Acceptor-induced bulk dielectric loss in superconducting circuits on silicon

Authors: Zi-Huai Zhang, Kadircan Godeneli, Justin He, Mutasem Odeh, Haoxin Zhou, Srujan Meesala, Alp Sipahigil

Abstract: The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLS). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In t… ▽ More The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLS). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a strongly coupled TLS bath for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits, and demonstrates the need for ultrahigh purity substrates for next-generation superconducting quantum processors. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Journal ref: Physical Review X 14, 041022 (2024)

Toward high-fidelity quantum information processing and quantum simulation with spin qubits and phonons

Authors: I. Arrazola, Y. Minoguchi, M. -A. Lemonde, A. Sipahigil, P. Rabl

Abstract: We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous dynamical decoupling techniques can substantially boost the coherence of the qubit states while increasing at the same time the variety of effective spin models that… ▽ More We analyze the implementation of high-fidelity, phonon-mediated gate operations and quantum simulation schemes for spin qubits associated with silicon vacancy centers in diamond. Specifically, we show how the application of continuous dynamical decoupling techniques can substantially boost the coherence of the qubit states while increasing at the same time the variety of effective spin models that can be implemented in this way. Based on realistic models and detailed numerical simulations, we demonstrate that this decoupling technique can suppress gate errors by more than two orders of magnitude and enable gate infidelities below $\sim 10^{-4}$ for experimentally relevant noise parameters. Therefore, when generalized to phononic lattices with arrays of implanted defect centers, this approach offers a realistic path toward moderate- and large-scale quantum devices with spins and phonons, at a level of control that is competitive with other leading quantum-technology platforms. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Comments: 12+10 pages, 6+3 figures

Compressive-Sensing-Enhanced First-Principles Calculation of Photoluminescence Spectra in Color Centers: A Comparison between Theory and Experiment for the G Center in Silicon

Authors: Jiongzhi Zheng, Lukasz Komza, Yihuang Xiong, Natalya Sheremetyeva, Changpeng Lin, Sinéad M. Griffin, Alp Sipahigil, Geoffroy Hautier

Abstract: Photoluminescence (PL) spectra are a versatile tool for exploring the electronic and optical properties of quantum defect systems. In this work, we investigate the PL spectra of the G center in silicon by combining first-principles computations with a machine-learned compressive-sensing technique and experiment. We show that the compressive-sensing technique provides a speed up of approximately 20… ▽ More Photoluminescence (PL) spectra are a versatile tool for exploring the electronic and optical properties of quantum defect systems. In this work, we investigate the PL spectra of the G center in silicon by combining first-principles computations with a machine-learned compressive-sensing technique and experiment. We show that the compressive-sensing technique provides a speed up of approximately 20 times compared with the finite-displacement method with similar numerical accuracy. We compare theory and experiment and show good agreement for the historically proposed configuration B of the G center. In particular, we attribute the experimentally observed E-line of the G center to a local vibration mode mainly involving two substitutional C atoms and one interstitial Si atom. Our theoretical results also well reproduce and explain the experimental E-line energy shifts originating from the carbon isotopic effect. In addition, our results demonstrate that some highly anharmonic modes that are apparent in computed spectra could be absent experimentally because of their short lifetime. Our work not only provides a deeper understanding of the G-center defect but also paves the way to accelerate the calculation of PL spectra for color centers. △ Less

Submitted 16 February, 2024; v1 submitted 12 February, 2024; originally announced February 2024.

High-throughput identification of spin-photon interfaces in silicon

Authors: Yihuang Xiong, Céline Bourgois, Natalya Sheremetyeva, Wei Chen, Diana Dahliah, Hanbin Song, Sinéad M. Griffin, Alp Sipahigil, Geoffroy Hautier

Abstract: Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum… ▽ More Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum defects from experiments only extremely challenging. Here, we use high-throughput first principles computational screening to identify spin-photon interfaces among more than 1000 substitutional and interstitial charged defects in silicon. We evaluate the most promising defects by considering their optical properties, spin multiplicity, and formation energies. The use of a single-shot hybrid functional approach is critical in enabling the screening of a large number of defects with a reasonable accuracy in the calculated optical and electronic properties. We identify three new promising spin-photon interface as potential bright emitters in the telecom band: $\rm Ti_{i}^{+}$, $\rm Fe_{i}^{0}$, and $\rm Ru_{i}^{0}$. These candidates are excited through defect-bound excitons, stressing the importance of considering these type of defects in silicon if operations in the telecom band is targeted. Our work paves the way to further large scale computational screening for quantum defects in silicon and other hosts. △ Less

Submitted 2 March, 2023; originally announced March 2023.

Midgap state requirements for optically active quantum defects

Authors: Yihuang Xiong, Milena Mathew, Sinéad M. Griffin, Alp Sipahigil, Geoffroy Hautier

Abstract: Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their opto-electronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied… ▽ More Optically active quantum defects play an important role in quantum sensing, computing, and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their opto-electronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied and unoccupied single-particle states. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies as they mimic an isolated atom embedded in the host. In this perspective, we contradict this common assumption and show that optically active defects with energy levels close to the band edges can display similar properties. We highlight quantum defects that are excited through transitions to or from a band-like level (bound exciton), such as the T center and Se$\rm _{Si}^+$ in silicon. We also present how defects such as the silicon divacancy in diamond can involve transitions between localized levels that are above the conduction band or below the valence band. Loosening the commonly assumed requirement on the electronic structure of quantum defects offers opportunities in quantum defects design and discovery, especially in smaller band gap hosts such as silicon. We discuss the challenges in terms of operating temperature for photoluminescence or radiative lifetime in this regime. We also highlight how these alternative type of defects bring their own needs in terms of theoretical developments and fundamental understanding. This perspective clarifies the electronic structure requirement for quantum defects and will facilitate the identification and design of new color centers for quantum applications especially driven by first principles computations. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Indistinguishable photons from an artificial atom in silicon photonics

Authors: Lukasz Komza, Polnop Samutpraphoot, Mutasem Odeh, Yu-Lung Tang, Milena Mathew, Jiu Chang, Hanbin Song, Myung-Ki Kim, Yihuang Xiong, Geoffroy Hautier, Alp Sipahigil

Abstract: Silicon is the ideal material for building electronic and photonic circuits at scale. Spin qubits and integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources, two-photon gates, and spin-photon interfaces in silicon poses a major cha… ▽ More Silicon is the ideal material for building electronic and photonic circuits at scale. Spin qubits and integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources, two-photon gates, and spin-photon interfaces in silicon poses a major challenge to scalability. In this work, we show a new type of indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source highly coherent single photons suitable for photonic quantum networks and processors. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 10 pages, 9 figures

Journal ref: Nature Communications 15, 6920 (2024)

First principles study of the T-center in Silicon

Authors: Diana Dhaliah, Yihuang Xiong, Alp Sipahigil, Sinéad M. Griffin, Geoffroy Hautier

Abstract: The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent… ▽ More The T-center in silicon is a well-known carbon-based color center that has been recently considered for quantum technology applications. Using first principles computations, we show that the excited state is formed by a defect-bound exciton made of a localized defect state occupied by an electron to which a hole is bound. The localized state is of strong carbon \textit{p} character and reminiscent of the localization of the unpaired electron in the ethyl radical molecule. The radiative lifetime for the defect-bound exciton is calculated to be on the order of $μ$s, much longer than other quantum defects such as the NV center in diamond and in agreement with experiments. The longer lifetime is associated with the small transition dipole moment as a result of the very different nature of the localized and delocalized states forming the defect-bound exciton. Finally, we use first principles calculations to assess the stability of the T-center. We find the T-center to be stable against decomposition into simpler defects when keeping the stoichiometry fixed. However, we identify that the T-center is easily prone to (de)hydrogenation and so requires very precise annealing conditions (temperature and atmosphere) to be efficiently formed. △ Less

Submitted 30 March, 2022; v1 submitted 8 February, 2022; originally announced February 2022.

Collapse and Revival of an Artificial Atom Coupled to a Structured Photonic Reservoir

Authors: Vinicius S. Ferreira, Jash Banker, Alp Sipahigil, Matthew H. Matheny, Andrew J. Keller, Eunjong Kim, Mohammad Mirhosseini, Oskar Painter

Abstract: A structured electromagnetic reservoir can result in novel dynamics of quantum emitters. In particular, the reservoir can be tailored to have a memory of past interactions with emitters, in contrast to memory-less Markovian dynamics of typical open systems. In this Article, we investigate the non-Markovian dynamics of a superconducting qubit strongly coupled to a superconducting slow-light wavegui… ▽ More A structured electromagnetic reservoir can result in novel dynamics of quantum emitters. In particular, the reservoir can be tailored to have a memory of past interactions with emitters, in contrast to memory-less Markovian dynamics of typical open systems. In this Article, we investigate the non-Markovian dynamics of a superconducting qubit strongly coupled to a superconducting slow-light waveguide reservoir. Tuning the qubit into the spectral vicinity of the passband of this waveguide, we find non-exponential energy relaxation as well as substantial changes to the qubit emission rate. Further, upon addition of a reflective boundary to one end of the waveguide, we observe revivals in the qubit population on a timescale 30 times longer than the inverse of the qubit's emission rate, corresponding to the round-trip travel time of an emitted photon. By tuning of the qubit-waveguide interaction strength, we probe a crossover between Markovian and non-Markovian qubit emission dynamics. These attributes allow for future studies of multi-qubit circuits coupled to structured reservoirs, in addition to constituting the necessary resources for generation of multiphoton highly entangled states. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Comments: 19 pages, 11 figures with appendices

Phononic bandgap nano-acoustic cavity with ultralong phonon lifetime

Authors: Gregory S. MacCabe, Hengjiang Ren, Jie Luo, Justin D. Cohen, Hengyun Zhou, Alp Sipahigil, Mohammad Mirhosseini, Oskar Painter

Abstract: We present measurements at millikelvin temperatures of the microwave-frequency acoustic properties of a crystalline silicon nanobeam cavity incorporating a phononic bandgap clamping structure for acoustic confinement. Utilizing pulsed laser light to excite a co-localized optical mode of the nanobeam cavity, we measure the dynamics of cavity acoustic modes with single-phonon sensitivity. Energy rin… ▽ More We present measurements at millikelvin temperatures of the microwave-frequency acoustic properties of a crystalline silicon nanobeam cavity incorporating a phononic bandgap clamping structure for acoustic confinement. Utilizing pulsed laser light to excite a co-localized optical mode of the nanobeam cavity, we measure the dynamics of cavity acoustic modes with single-phonon sensitivity. Energy ringdown measurements for the fundamental $5$~GHz acoustic mode of the cavity shows an exponential increase in phonon lifetime versus number of periods in the phononic bandgap shield, increasing up to $τ\approx 1.5$~seconds. This ultralong lifetime, corresponding to an effective phonon propagation length of several kilometers, is found to be consistent with damping from non-resonant two-level system defects on the surface of the silicon device. Potential applications of these ultra-coherent nanoscale mechanical resonators range from tests of various collapse models of quantum mechanics to miniature quantum memory elements in hybrid superconducting quantum circuits. △ Less

Submitted 13 January, 2019; originally announced January 2019.

Comments: 43 pages, 22 figures

Journal ref: Science, Vol. 370, Issue 6518, pp. 840-843, November 13, 2020

Photon-mediated interactions between quantum emitters in a diamond nanocavity

Authors: Ruffin E. Evans, Mihir K. Bhaskar, Denis D. Sukachev, Christian T. Nguyen, Alp Sipahigil, Michael J. Burek, Bartholomeus Machielse, Grace H. Zhang, Alexander S. Zibrov, Edward Bielejec, Hongkun Park, Marko Lončar, Mikhail D. Lukin

Abstract: Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode r… ▽ More Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes. △ Less

Submitted 11 July, 2018; originally announced July 2018.

Comments: 8 pages and 4 figures. Supplementary Material, 23 pages and 9 figures, available as an ancillary file

Strain engineering of the silicon-vacancy center in diamond

Authors: Srujan Meesala, Young-Ik Sohn, Benjamin Pingault, Linbo Shao, Haig A. Atikian, Jeffrey Holzgrafe, Mustafa Gundogan, Camille Stavrakas, Alp Sipahigil, Cleaven Chia, Michael J. Burek, Mian Zhang, Lue Wu, Jose L. Pacheco, John Abraham, Edward Bielejec, Mikhail D. Lukin, Mete Atature, Marko Loncar

Abstract: We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing larg… ▽ More We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multi-qubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain suseptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator. △ Less

Submitted 31 January, 2018; v1 submitted 29 January, 2018; originally announced January 2018.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 97, 205444 (2018)

All-optical nanoscale thermometry with silicon-vacancy centers in diamond

Authors: Christian T. Nguyen, Ruffin E. Evans, Alp Sipahigil, Mihir K. Bhaskar, Denis D. Sukachev, Viatcheslav N. Agafonov, Valery A. Davydov, Liudmila F. Kulikova, Fedor Jelezko, Mikhail D. Lukin

Abstract: We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs i… ▽ More We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Δλ/ΔT= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs in $200\,\mathrm{nm}$ nanodiamonds as local temperature probes with $521\,\mathrm{ mK/\sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems. △ Less

Submitted 17 August, 2017; originally announced August 2017.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 112, 203102 (2018)

Controlling the coherence of a diamond spin qubit through strain engineering

Authors: Young-Ik Sohn, Srujan Meesala, Benjamin Pingault, Haig A. Atikian, Jeffrey Holzgrafe, Mustafa Gundogan, Camille Stavrakas, Megan J. Stanley, Alp Sipahigil, Joonhee Choi, Mian Zhang, Jose L. Pacheco, John Abraham, Edward Bielejec, Mikhail D. Lukin, Mete Atature, Marko Loncar

Abstract: The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of opera… ▽ More The uncontrolled interaction of a quantum system with its environment is detrimental for quantum coherence. In the context of solid-state qubits, techniques to mitigate the impact of fluctuating electric and magnetic fields from the environment are well-developed. In contrast, suppression of decoherence from thermal lattice vibrations is typically achieved only by lowering the temperature of operation. Here, we use a nano-electro-mechanical system (NEMS) to mitigate the effect of thermal phonons on a solid-state quantum emitter without changing the system temperature. We study the silicon-vacancy (SiV) colour centre in diamond which has optical and spin transitions that are highly sensitive to phonons. First, we show that its electronic orbitals are highly susceptible to local strain, leading to its high sensitivity to phonons. By controlling the strain environment, we manipulate the electronic levels of the emitter to probe, control, and eventually, suppress its interaction with the thermal phonon bath. Strain control allows for both an impressive range of optical tunability and significantly improved spin coherence. Finally, our findings indicate that it may be possible to achieve strong coupling between the SiV spin and single phonons, which can lead to the realisation of phonon-mediated quantum gates and nonlinear quantum phononics. △ Less

Submitted 31 January, 2018; v1 submitted 12 June, 2017; originally announced June 2017.

Comments: 11 pages, 3 figures

A fiber-coupled diamond quantum nanophotonic interface

Authors: Michael J. Burek, Charles Meuwly, Ruffin E. Evans, Mihir K. Bhaskar, Alp Sipahigil, Srujan Meesala, Denis D. Sukachev, Christian T. Nguyen, Jose L. Pacheco, Edward Bielejec, Mikhail D. Lukin, Marko Lončar

Abstract: Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power… ▽ More Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances. △ Less

Submitted 29 March, 2017; v1 submitted 15 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. Applied 8, 024026 (2017)

Quantum Nonlinear Optics with a Germanium-Vacancy Color Center in a Nanoscale Diamond Waveguide

Authors: Mihir K. Bhaskar, Denis D. Sukachev, Alp Sipahigil, Ruffin E. Evans, Michael J. Burek, Christian T. Nguyen, Lachlan J. Rogers, Petr Siyushev, Mathias H. Metsch, Hongkun Park, Fedor Jelezko, Marko Lončar, Mikhail D. Lukin

Abstract: We demonstrate a quantum nanophotonics platform based on germanium-vacancy (GeV) color centers in fiber-coupled diamond nanophotonic waveguides. We show that GeV optical transitions have a high quantum efficiency and are nearly lifetime-broadened in such nanophotonic structures. These properties yield an efficient interface between waveguide photons and a single GeV without the use of a cavity or… ▽ More We demonstrate a quantum nanophotonics platform based on germanium-vacancy (GeV) color centers in fiber-coupled diamond nanophotonic waveguides. We show that GeV optical transitions have a high quantum efficiency and are nearly lifetime-broadened in such nanophotonic structures. These properties yield an efficient interface between waveguide photons and a single GeV without the use of a cavity or slow-light waveguide. As a result, a single GeV center reduces waveguide transmission by $18 \pm 1\%$ on resonance in a single pass. We use a nanophotonic interferometer to perform homodyne detection of GeV resonance fluorescence. By probing the photon statistics of the output field, we demonstrate that the GeV-waveguide system is nonlinear at the single-photon level. △ Less

Submitted 31 May, 2017; v1 submitted 9 December, 2016; originally announced December 2016.

Comments: 5 pages and 5 figures. Supplemental Material, 4 pages and 1 figure, available as an ancillary file

Journal ref: Phys. Rev. Lett. 118, 223603 (2017)

Optical and microwave control of germanium-vacancy center spins in diamond

Authors: Petr Siyushev, Mathias H. Metsch, Aroosa Ijaz, Jan M. Binder, Mihir K. Bhaskar, Denis D. Sukachev, Alp Sipahigil, Ruffin E. Evans, Christian T. Nguyen, Mikhail D. Lukin, Philip R. Hemmer, Yuri N. Palyanov, Igor N. Kupriyanov, Yuri M. Borzdov, Lachlan J. Rogers, Fedor Jelezko

Abstract: A solid-state system combining a stable spin degree of freedom with an efficient optical interface is highly desirable as an element for integrated quantum optical and quantum information systems. We demonstrate a bright color center in diamond with excellent optical properties and controllable electronic spin states. Specifically, we carry out detailed optical spectroscopy of a Germanium Vacancy… ▽ More A solid-state system combining a stable spin degree of freedom with an efficient optical interface is highly desirable as an element for integrated quantum optical and quantum information systems. We demonstrate a bright color center in diamond with excellent optical properties and controllable electronic spin states. Specifically, we carry out detailed optical spectroscopy of a Germanium Vacancy (GeV) color center demonstrating optical spectral stability. Using an external magnetic field to lift the electronic spin degeneracy, we explore the spin degree of freedom as a controllable qubit. Spin polarization is achieved using optical pumping, and a spin relaxation time in excess of 20 $μ$s is demonstrated. Optically detected magnetic resonance (ODMR) is observed in the presence of a resonant microwave field. ODMR is used as a probe to measure the Autler-Townes effect in a microwave-optical double resonance experiment. Superposition spin states were prepared using coherent population trapping, and a pure dephasing time of about 19 ns was observed. Prospects for realizing coherent quantum registers based on optically controlled GeV centers are discussed. △ Less

Submitted 12 December, 2016; v1 submitted 9 December, 2016; originally announced December 2016.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 96, 081201 (2017)

Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures

Authors: Tim Schröder, Matthew E. Trusheim, Michael Walsh, Luozhou Li, Jiabao Zheng, Marco Schukraft, Jose L. Pacheco, Ryan M. Camacho, Edward S. Bielejec, Alp Sipahigil, Ruffin E. Evans, Denis D. Sukachev, Christian T. Nguyen, Mikhail D. Lukin, Dirk Englund

Abstract: The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm… ▽ More The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices. △ Less

Submitted 29 October, 2016; originally announced October 2016.

Single-Photon Switching and Entanglement of Solid-State Qubits in an Integrated Nanophotonic System

Authors: Alp Sipahigil, Ruffin E. Evans, Denis D. Sukachev, Michael J. Burek, Johannes Borregaard, Mihir K. Bhaskar, Christian T. Nguyen, Jose L. Pacheco, Haig A. Atikian, Charles Meuwly, Ryan M. Camacho, Fedor Jelezko, Edward Bielejec, Hongkun Park, Marko Lončar, Mikhail D. Lukin

Abstract: Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize… ▽ More Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks. △ Less

Submitted 17 August, 2016; originally announced August 2016.

Comments: 15 pages and 5 figures. Supplementary Material, 36 pages and 10 figures, available as an ancillary file

Journal ref: Science, 354, 847-850 (2016)

Narrow-linewidth homogeneous optical emitters in diamond nanostructures via silicon ion implantation

Authors: Ruffin E. Evans, Alp Sipahigil, Denis D. Sukachev, Alexander S. Zibrov, Mikhail D. Lukin

Abstract: The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon durin… ▽ More The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices. △ Less

Submitted 25 April, 2016; v1 submitted 11 December, 2015; originally announced December 2015.

Comments: 9 pages, 5 figures. (v3) Updated to make consistent with journal version. Some material from SI incorporated into main text. Minor stylistic updates compared to previous version

Journal ref: Phys. Rev. Applied 5, 044010 (2016)

State-selective intersystem crossing in nitrogen-vacancy centers

Authors: M. L. Goldman, M. W. Doherty, A. Sipahigil, N. Y. Yao, S. D. Bennett, N. B. Manson, A. Kubanek, M. D. Lukin

Abstract: The intersystem crossing (ISC) is an important process in many solid-state atomlike impurities. For example, it allows the electronic spin state of the nitrogen-vacancy (NV) center in diamond to be initialized and read out using optical fields at ambient temperatures. This capability has enabled a wide array of applications in metrology and quantum information science. Here, we develop a microscop… ▽ More The intersystem crossing (ISC) is an important process in many solid-state atomlike impurities. For example, it allows the electronic spin state of the nitrogen-vacancy (NV) center in diamond to be initialized and read out using optical fields at ambient temperatures. This capability has enabled a wide array of applications in metrology and quantum information science. Here, we develop a microscopic model of the state-selective ISC from the optical excited state manifold of the NV center. By correlating the electron-phonon interactions that mediate the ISC with those that induce population dynamics within the NV center's excited state manifold and those that produce the phonon sidebands of its optical transitions, we quantitatively demonstrate that our model is consistent with recent ISC measurements. Furthermore, our model constrains the unknown energy spacings between the center's spin-singlet and spin-triplet levels. Finally, we discuss prospects to engineer the ISC in order to improve the spin initialization and readout fidelities of NV centers. △ Less

Submitted 3 March, 2015; v1 submitted 15 December, 2014; originally announced December 2014.

Journal ref: Phys. Rev. B 91, 165201 (2015)

Electron-phonon processes of the silicon-vacancy centre in diamond

Authors: Kay D. Jahnke, Alp Sipahigil, Jan M. Binder, Marcus W. Doherty, Mathias Metsch, Lachlan J. Rogers, Neil B. Manson, Mikhail D. Lukin, Fedor Jelezko

Abstract: We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($\mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A micro… ▽ More We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy ($\mathrm{SiV}^-$) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic model of the thermal broadening in the excited and ground states of the $\mathrm{SiV}^-$ centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures. We discuss the implications of our findings for coherence of qubit states in the ground states and propose methods to extend coherence times of $\mathrm{SiV}^-$ qubits. △ Less

Submitted 11 November, 2014; originally announced November 2014.

Comments: 19 pages, 6 figures

Journal ref: New J. Phys. 17 043011 (2015)

All-optical initialization, readout, and coherent preparation of single silicon-vacancy spins in diamond

Authors: Lachlan J. Rogers, Kay D. Jahnke, Mathias H. Metsch, Alp Sipahigil, Jan M. Binder, Tokuyuki Teraji, Hitoshi Sumiya, Junichi Isoya, Mikhail D. Lukin, Philip Hemmer, Fedor Jelezko

Abstract: The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a… ▽ More The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show high fidelity optical initialization and readout of electronic spin in a single $\mathrm{SiV}^-$ center with a spin relaxation time of $T_1=2.4\pm0.2$ ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of $T_2^\star=35\pm3$ ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherences by engineering interactions with phonons. These results establish the $\mathrm{SiV}^-$ center as a solid-state spin-photon interface. △ Less

Submitted 6 October, 2014; originally announced October 2014.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Lett. 113, 263602 (2014)

Indistinguishable photons from separated silicon-vacancy centers in diamond

Authors: Alp Sipahigil, Kay D. Jahnke, Lachlan J. Rogers, T. Teraji, J. Isoya, Alexander S. Zibrov, Fedor Jelezko, Mikhail D. Lukin

Abstract: We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for r… ▽ More We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, and demonstrate generation of indistinguishable single photons from separate emitters in a Hong-Ou-Mandel (HOM) interference experiment.Prospects for realizing efficient quantum network nodes using SiV centers are discussed. △ Less

Submitted 1 July, 2014; v1 submitted 17 June, 2014; originally announced June 2014.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. Lett. 113, 113602 (2014)

Phonon-Induced Population Dynamics and Intersystem Crossing in Nitrogen-Vacancy Centers

Authors: M. L. Goldman, A. Sipahigil, M. W. Doherty, N. Y. Yao, S. D. Bennett, M. Markham, D. J. Twitchen, N. B. Manson, A. Kubanek, M. D. Lukin

Abstract: We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing… ▽ More We report direct measurement of population dynamics in the excited state manifold of a nitrogen-vacancy (NV) center in diamond. We quantify the phonon-induced mixing rate and demonstrate that it can be completely suppressed at low temperatures. Further, we measure the intersystem crossing (ISC) rate for different excited states and develop a theoretical model that unifies the phonon-induced mixing and ISC mechanisms. We find that our model is in excellent agreement with experiment and that it can be used to predict unknown elements of the NV center's electronic structure. We discuss the model's implications for enhancing the NV center's performance as a room-temperature sensor. △ Less

Submitted 3 March, 2015; v1 submitted 16 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. Lett. 114, 145502 (2015)

Quantum interference of single photons from remote nitrogen-vacancy centers in diamond

Authors: Alp Sipahigil, Michael L. Goldman, Emre Togan, Yiwen Chu, Matthew Markham, Daniel J. Twitchen, Alexander S. Zibrov, Alexander Kubanek, Mikhail D. Lukin

Abstract: We demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection efficiency. Quantum interference is verified by measuring a value of the second-order cross-correlation function $g^{(2)}(0) = 0.35 \pm 0.04<0.5$. In addition,… ▽ More We demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection efficiency. Quantum interference is verified by measuring a value of the second-order cross-correlation function $g^{(2)}(0) = 0.35 \pm 0.04<0.5$. In addition, optical transition frequencies of two separated NV centers are tuned into resonance with each other by applying external electric fields. Extension of the present approach to generate entanglement of remote solid-state qubits is discussed. △ Less

Submitted 11 April, 2012; v1 submitted 16 December, 2011; originally announced December 2011.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 108, 143601 (2012)