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Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers
Authors:
J. M. Simmons,
B. M. Nichols,
Matthew S. Marcus,
O. M. Castellini,
R. J. Hamers,
M. A. Eriksson
Abstract:
The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the growth of single-walled carbon nanotubes on bare silicon and on ultra-thin oxides is greatly inhibited due to the formation of a non-catalytic silici…
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The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the growth of single-walled carbon nanotubes on bare silicon and on ultra-thin oxides is greatly inhibited due to the formation of a non-catalytic silicide. Using x-ray photoelectron spectroscopy, we show that silicide formation occurs on ultra-thin oxides due to thermally activated metal diffusion through the oxide. Silicides affect the growth of single-walled nanotubes more than multi-walled nanotubes due to the increased kinetics at the higher single-walled nanotube growth temperature. We demonstrate that nickel and iron catalysts, when deposited on clean silicon or ultra-thin silicon dioxide layers, begin to form silicides at relatively low temperatures, and that by 900C, all of the catalyst has been incorporated into the silicide, rendering it inactive for subsequent single-walled nanotube growth. We further show that a 4 nm silicon dioxide layer is the minimum diffusion barrier thickness which allows for efficient single-walled nanotube growth.
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Submitted 9 October, 2007;
originally announced October 2007.
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Photo-gating Carbon Nanotube Transistors
Authors:
Matthew S. Marcus,
J. M. Simmons,
O. M. Castellini,
R. J. Hamers,
M. A. Eriksson
Abstract:
Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light absorption in the silicon substrate generates a photovoltage that can electrically gate the nanotube device. The photocurrent induced by the changing gate voltage ca…
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Optoelectronic measurements of carbon nanotube transistors have shown a wide variety of sensitivites to the incident light. Direct photocurrent processes compete with a number of extrinsic mechanisms. Here we show that visible light absorption in the silicon substrate generates a photovoltage that can electrically gate the nanotube device. The photocurrent induced by the changing gate voltage can be significantly larger than that due to direct electron-hole pair generation in the nanotube. The dominance of photogating in these devices is confirmed by the power and position dependence of the resulting photocurrent. The power dependence is strongly non-linear and photocurrents are measured through the device even when the laser illuminates up to 1~mm from the nanotube.
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Submitted 5 October, 2007;
originally announced October 2007.
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The effect of ozone oxidation on single-walled carbon nanotubes
Authors:
J. M. Simmons,
B. M. Nichols,
S. E. Baker,
Matthew S. Marcus,
O. M. Castellini,
C. -S. Lee,
R. J. Hamers,
M. A. Eriksson
Abstract:
Exposing single-walled carbon nanotubes to room temperature UV-generated ozone leads to an irreversible increase in their electrical resistance. We demonstrate that the increased resistance is due to ozone oxidation on the sidewalls of the nanotubes rather than at the end caps. Raman and x-ray photoelectron spectroscopy show an increase in the defect density due to the oxidation of the nanotubes…
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Exposing single-walled carbon nanotubes to room temperature UV-generated ozone leads to an irreversible increase in their electrical resistance. We demonstrate that the increased resistance is due to ozone oxidation on the sidewalls of the nanotubes rather than at the end caps. Raman and x-ray photoelectron spectroscopy show an increase in the defect density due to the oxidation of the nanotubes. Using ultraviolet photoelectron spectroscopy we show that these defects represent the removal of pi-conjugated electron states near the Fermi level, leading to the observed increase in electrical resistance. Oxidation of carbon nanotubes is an important first step in many chemical functionalization processes. Since the oxidation rate is controllable with short exposures, UV-generated ozone offers the potential for use as a low-thermal budget processing tool.
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Submitted 3 October, 2007;
originally announced October 2007.
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Optically Modulated Conduction in Chromophore-Functionalized Single-Wall Carbon Nanotubes
Authors:
J. M. Simmons,
I. In,
V. E. Campbell,
T. J. Mark,
F. Leonard,
P. Gopalan,
M. A. Eriksson
Abstract:
We demonstrate an optically active nanotube-hybrid material by functionalizing single-wall nanotubes with an azo-based chromophore. Upon UV illumination, the conjugated chromophore undergoes a cis-trans isomerization leading to a charge redistribution near the nanotube. This charge redistribution changes the local electrostatic environment, shifting the threshold voltage and increasing the condu…
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We demonstrate an optically active nanotube-hybrid material by functionalizing single-wall nanotubes with an azo-based chromophore. Upon UV illumination, the conjugated chromophore undergoes a cis-trans isomerization leading to a charge redistribution near the nanotube. This charge redistribution changes the local electrostatic environment, shifting the threshold voltage and increasing the conductivity of the nanotube transistor. For a ~1-2% coverage, we measure a shift in the threshold voltage of up to 1.2 V. Further, the conductance change is reversible and repeatable over long periods of time, indicating that the chromophore functionalized nanotubes are useful for integrated nano-photodetectors.
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Submitted 2 March, 2007;
originally announced March 2007.
