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Frequency as a Clock: Synchronization and Intrinsic Recovery in Graphene Transistor Dynamics
Authors:
Victor Lopez-Richard,
Igor Ricardo Filgueira e Silva,
Gabriel L. Rodrigues,
Kenji Watanabe,
Takashi Taniguchi,
Alisson R. Cadore
Abstract:
Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accou…
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Hysteresis and memory effects in graphene field-effect transistors (GFETs) offer unique opportunities for neuromorphic computing, sensing, and memory applications, yet their physical origins remain debated due to competing volatile and nonvolatile interpretations. Here, we present a unified dynamic model that captures the essential physics of the GFET response under periodic gate modulation, accounting for both intrinsic relaxation processes and externally driven charge transfer. By modeling non-equilibrium carrier dynamics as a competition between injection and reabsorption rates, we uncover two distinct regimes: one governed by intrinsic, frequency-independent relaxation and another exhibiting frequency-locked behavior where the response is tied to the external drive. This distinction resolves apparent nonvolatile effects and explains loop invariance in floating-gate structures via displacement current-driven charge injection. Our framework predicts the evolution of the hysteresis loop shape, amplitude, and direction across a wide range of driving conditions, offering a versatile tool for interpreting experimental results and guiding the design of next-generation graphene-based electronic systems.
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Submitted 10 June, 2025;
originally announced June 2025.
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Microscopic Modeling of Polarization Dynamics in Leaky Dielectrics: Insights into Ferroelectric-Like Behavior
Authors:
Igor Ricardo Filgueira e Silva,
Ovidiu Lipan,
Fabian Hartmann,
Sven Höfling,
Victor Lopez-Richard
Abstract:
Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric responses can emerge solely from the influence of transport processes that depend on energy levels, voltage polarity, and asymmetries in charge transfer rates. By…
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Based on a microscopic model of nonequilibrium carrier generation in a leaky dielectric, we analytically derive hysteresis loops for the dielectric response of non-polar, non-ferroelectric materials. We demonstrate how complex dielectric responses can emerge solely from the influence of transport processes that depend on energy levels, voltage polarity, and asymmetries in charge transfer rates. By combining Electrochemical Impedance Spectroscopy and voltammetry, we address critical questions related to the microscopic mechanisms in poorly conductive systems dominated by displacement currents. The impedance analysis, extended to higher-order harmonics, provides deeper insights into the dynamic behavior of dielectric materials, emphasizing the need to correlate impedance spectroscopy with dielectric spectroscopy for a thorough understanding of dipole relaxation and transport phenomena. Our approach provides a fully analytical framework that directly correlates microscopic charge dynamics with macroscopic dielectric responses, offering enhanced accuracy and predictive capability for systems dominated by displacement currents.
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Submitted 22 January, 2025; v1 submitted 21 October, 2024;
originally announced October 2024.
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Optical memory in a MoSe$_2$/Clinochlore device
Authors:
Alessandra Ames,
Frederico B. Sousa,
Gabriel A. D. Souza,
Raphaela de Oliveira,
Igor R. F. Silva,
Gabriel L. Rodrigues,
Kenji Watanabe,
Takashi Taniguchi,
Gilmar E. Marques,
Ingrid D. Barcelos,
Alisson R. Cadore,
Victor López-Richard,
Marcio D. Teodoro
Abstract:
Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric su…
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Two-dimensional heterostructures have been crucial in advancing optoelectronic devices utilizing van der Waals materials. Semiconducting transition metal dichalcogenide monolayers, known for their unique optical properties, offer extensive possibilities for light-emitting devices. Recently, a memory-driven optical device, termed a Mem-emitter, was proposed using these monolayers atop dielectric substrates. The successful realization of such devices heavily depends on selecting the optimal substrate. Here, we report a pronounced memory effect in a MoSe$_2$/clinochlore device, evidenced by electric hysteresis in the intensity and energy of MoSe$_2$ monolayer emissions. This demonstrates both population-driven and transition-rate-driven Mem-emitter abilities. Our theoretical approach correlates these memory effects with internal state variables of the substrate, emphasizing that clinochlore layered structure is crucial for a robust and rich memory response. This work introduces a novel two-dimensional device with promising applications in memory functionalities, highlighting the importance of alternative insulators in fabricating van der Waals heterostructures.
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Submitted 9 October, 2024;
originally announced October 2024.
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The Emergence of Mem-Emitters
Authors:
Victor Lopez-Richard,
Igor Ricardo Filgueira e Silva,
Alessandra Ames,
Frederico B. Sousa,
Marcio Daldin Teodoro,
Ingrid David Barcelos,
Raphaela de Oliveira,
Alisson Ronieri Cadore
Abstract:
The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that manipulate light emission properties of semiconductors to achieve memory functionalities. Mem-emitters, influenced by past exposure to stimuli, offer a new approach…
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The advent of memristors and resistive switching has transformed solid state physics, enabling advanced applications such as neuromorphic computing. Inspired by these developments, we introduce the concept of Mem-emitters, devices that manipulate light emission properties of semiconductors to achieve memory functionalities. Mem-emitters, influenced by past exposure to stimuli, offer a new approach to optoelectronic computing with potential for enhanced speed, efficiency, and integration. This study explores the unique properties of transition metal dichalcogenides-based heterostructures as a promising platform for Mem-emitter functionalities due to their atomic-scale thickness, tunable electronic properties, and strong light-matter interaction. By distinguishing between population-driven and transition rate-driven Mem-emitters, we highlight their potential for various applications, including optoelectronic switches, variable light sources, and advanced communication systems. Understanding these mechanisms paves the way for innovative technologies in memory and computation, offering insights into the intrinsic dynamics of complex systems.
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Submitted 25 July, 2024;
originally announced July 2024.
