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Development of a novel Light and Ion Beam Induced Luminescence (LIBIL) setup for in-situ optical characterization of color centers in diamond
Authors:
Matija Matijević,
Livio Žužić,
Jacopo Forneris,
Zdravko Siketić
Abstract:
In this work, development of the new Laser and Ion Beam Induced Luminescence (LIBIL) experimental end-station has been presented. To systematically test the capabilities and limitations of the newly developed setup, ionoluminescence (IL) and iono-photoluminescence (IPL) measurements were performed on a type IIa optical grade and a type Ib nitrogen rich diamond. By comparing and analyzing the obtai…
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In this work, development of the new Laser and Ion Beam Induced Luminescence (LIBIL) experimental end-station has been presented. To systematically test the capabilities and limitations of the newly developed setup, ionoluminescence (IL) and iono-photoluminescence (IPL) measurements were performed on a type IIa optical grade and a type Ib nitrogen rich diamond. By comparing and analyzing the obtained spectra, it was shown that the speed of luminescence quenching has a non-trivial dependence on the ion beam current. Additionally, it was demonstrated that some spectral features characteristic of the negatively charged nitrogen-vacancy color center (i.e. NV$^-$ zero-phonon line) have been observed only during IPL measurements. This demonstrates that the unification of two separate steps, ion implantation and optical characterization, could yield new insights into dynamics of color center formation.
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Submitted 28 December, 2024;
originally announced December 2024.
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Efficient fabrication of high-density ensembles of color centers via ion implantation on a hot diamond substrate
Authors:
E. Nieto Hernandez,
G. Andrini,
A. Crnjac,
M. Brajkovic,
F. Picariello,
E. Corte,
V. Pugliese,
M. Matijević,
P. Aprà,
V. Varzi,
J. Forneris,
M. Genovese,
Z. Siketic,
M. Jaksic,
S. Ditalia Tchernij
Abstract:
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In th…
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Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ensembles of NV centers, whose fabrication by ion implantation is upper limited by the amount of radiation damage introduced in the diamond lattice. In this works we demonstrate an approach to increase the density of NV centers upon the high-fluence implantation of MeV N2+ ions on a hot target substrate (>550 °C). Our results show that, with respect to room-temperature implantation, the high-temperature process increases the vacancy density threshold required for the irreversible conversion of diamond to a graphitic phase, thus enabling to achieve higher density ensembles. Furthermore, the formation efficiency of color centers was investigated on diamond substrates implanted at varying temperatures with MeV N2+ and Mg+ ions revealing that the formation efficiency of both NV centers and magnesium-vacancy (MgV) centers increases with the implantation temperature.
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Submitted 26 May, 2025; v1 submitted 30 October, 2023;
originally announced October 2023.
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Fluorine-based color centers in diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
E. Corte,
F. Sardi,
F. Picollo,
P. Traina,
M. Brajkovic,
A. Crnjac,
S. Pezzagna,
I. P. Degiovanni,
E. Moreva,
P. Aprà,
P. Olivero,
Z. Siketić,
J. Meijer,
M. Genovese,
J. Forneris
Abstract:
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s…
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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Submitted 9 December, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
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Mechanisms of surface nanostructuring of Al2O3 and MgO by grazing incidence irradiation with swift heavy ions
Authors:
Marko Karlusic,
Ruslan A. Rymzhanov,
Jacques H. O'Connell,
Lara Brockers,
Kristina Tomic Luketic,
Zdravko Siketic,
Stjepko Fazinic,
Pavo Dubcek,
Milko Jaksic,
Georgios Provatas,
Nikita Medvedev,
Alexander E. Volkov,
Marika Schleberger
Abstract:
We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam when no damage was found. Moreover, ions in these two materials produce notably different structures: grooves surrounded with nanohillocks on MgO surfaces vs. s…
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We experimentally discovered that Al2O3 and MgO exhibit well-pronounced nanometric modifications on the surfaces when irradiated under grazing incidence with 23 MeV I beam, in contrast to normal incidence irradiation with the same ion beam when no damage was found. Moreover, ions in these two materials produce notably different structures: grooves surrounded with nanohillocks on MgO surfaces vs. smoother, roll-like discontinuous structures on the surfaces of Al2O3. To explain these results, detailed numerical simulations were performed. We identified that a presence of the surface inhibits recrystallization process, thereby preventing transient tracks from recovery, and thus forming observable nanopatterns. Furthermore, a difference in the viscosities in molten states in Al2O3 vs. MgO explains the differences in the created nanostructures. Our results thus provide a deeper understanding of the fundamental processes of surface nanostructuring, potentially allowing for controlled production of periodic surface nanopatterns.
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Submitted 10 March, 2020;
originally announced March 2020.
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Helium load on W-O coatings grown by pulsed laser deposition
Authors:
R. Mateus,
D. Dellasega,
M. Passoni,
Z. Siketić,
I. Bogdanović Radović,
A. Hakola,
E. Alves
Abstract:
W-O deposits with complex morphologies and significant He contents will growth on the surface of plasma facing components exposed to He discharges. To mimic the re/co-deposition process, W-O-He coatings were produced by implanting He+ ions on W films grown by pulsed laser deposition (PLD). The use of appropriate PLD experimental parameters such as Ar or He background atmospheres induces the deposi…
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W-O deposits with complex morphologies and significant He contents will growth on the surface of plasma facing components exposed to He discharges. To mimic the re/co-deposition process, W-O-He coatings were produced by implanting He+ ions on W films grown by pulsed laser deposition (PLD). The use of appropriate PLD experimental parameters such as Ar or He background atmospheres induces the deposition of porous or amorphous-like W-O structures, respectively. After multiple ion implantation stages using 150 keV, 100 keV and 50 keV incident He+ ion beams with a total fluence of 5 x 1017 ion/cm^2, significant amounts of He were identified in porous coatings by Rutherford backscattering (RBS). Time-of-flight elastic recoil detection (TOF-ERDA) measurements showed that most of the implanted He was already released from the porous coatings five month after implantation while for the case of amorphous ones the He content remains significant at deeper layers and smoothly decrease towards the surface, as result of a different morphology and nanostructure. The proposed method involving PLD and ion implantation seems adequate to produce W-O-He reference samples for fusion investigations.
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Submitted 17 December, 2018; v1 submitted 5 December, 2018;
originally announced December 2018.
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Monitoring ion track formation using in situ RBS/c and ERDA
Authors:
Marko Karlusic,
Stjepko Fazinic,
Zdravko Siketic,
Tonci Tadic,
Domagoj Cosic,
Milko Jaksic,
Marika Schleberger
Abstract:
The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detecti…
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The aim of this work is to investigate feasibility of the ion beam analysis techniques for monitoring swift heavy ion track formation. First, use of the in situ Rutherford backscattering spectroscopy in channeling mode to observe damage build-up in quartz SiO2 after MeV heavy ion irradiation is demonstrated. Second, new results of the in situ grazing incidence time-of-flight elastic recoil detection analysis used for monitoring the surface elemental composition during ion tracks formation in various materials are presented. Ion tracks were found on SrTiO3, quartz SiO2, a-SiO2 and muscovite mica surfaces by atomic force microscopy, but in contrast to our previous studies on GaN and TiO2, surface stoichiometry remained unchanged.
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Submitted 11 April, 2017;
originally announced April 2017.
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On the threshold of ion track formation in CaF2
Authors:
Marko Karlusic,
Corneliu Ghica,
Raluca Florentina Negrea,
Zdravko Siketic,
Milko Jaksic,
Marika Schleberger,
Stjepko Fazinic
Abstract:
There is ongoing debate regarding the mechanism of swift heavy ion track formation in CaF2. The objective of this study is to shed light on this important topic using a range of complimentary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV/nm is provided by both transmission electron microscopy and Rutherford backscattering spectroscopy in the channelin…
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There is ongoing debate regarding the mechanism of swift heavy ion track formation in CaF2. The objective of this study is to shed light on this important topic using a range of complimentary experimental techniques. Evidence of the threshold for ion track formation being below 3 keV/nm is provided by both transmission electron microscopy and Rutherford backscattering spectroscopy in the channeling mode which has direct consequences for the validity of models describing the response of CaF2 to swift heavy ion irradiation. Advances in the TEM and RBS/c analyses presented here pave the way for better understanding of the ion track formation.
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Submitted 13 June, 2016;
originally announced June 2016.
