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Anomalous Raman scattering in layered AgCrP$_2$Se$_6$: Helical modes and excitation energy-dependent intensities
Authors:
Rahul Rao,
Jie Jiang,
Ruth Pachter,
Thuc T. Mai,
Valentine Mohaugen,
Maria F. Muñoz,
Ryan Siebenaller,
Emmanuel Rowe,
Ryan Selhorst,
Andrea N. Giordano,
Angela R. Hight Walker,
Michael A. Susner
Abstract:
Structural anisotropy in layered two-dimensional materials can lead to highly anisotropic optical absorption which, in turn, can profoundly a^ect their phonon modes. These e^ects include lattice orientation-dependent and excitation energy-dependent mode intensities that can enable new phononic and optoelectronic applications. Here, we report anomalous Raman spectra in single-crystalline AgCrP$_2$S…
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Structural anisotropy in layered two-dimensional materials can lead to highly anisotropic optical absorption which, in turn, can profoundly a^ect their phonon modes. These e^ects include lattice orientation-dependent and excitation energy-dependent mode intensities that can enable new phononic and optoelectronic applications. Here, we report anomalous Raman spectra in single-crystalline AgCrP$_2$Se$_6$, a layered antiferromagnetic material. Density functional theory calculations and experimental measurements reveal several unique features in the Raman spectra of bulk and exfoliated AgCrP$_2$Se$_6$ crystals including three helical vibrational modes. These modes exhibit large Raman optical activities (circular intensity di^erences) in bulk AgCrP$_2$Se$_6$, which progressively decrease with thickness. We also observe strong excitation energy dependent peak intensities as well as a decrease in anti-Stokes peak intensities at room temperature with increasing excitation energy, resulting in an apparent cooling by up to 220 K. All of these anomalies in bulk and exfoliated flakes are attributed to the unique ABC layer stacking structure of AgCrP$_2$Se$_6$ and to the smaller unit cell volume that causes hybridization between the Se and Ag/Cr electron densities, resulting in charge transfer and strongly a^ecting the electron-phonon coupling. This work thus positions AgCrP$_2$Se$_6$ as an exciting new 2D material for optical and phononic applications.
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Submitted 29 January, 2025;
originally announced January 2025.
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Thermal and dimensional stability of photocatalytic material ZnPS$_3$ under extreme environmental conditions
Authors:
Abhishek Mukherjee,
Vivian J. Santamaría-García,
Damian Wlodarczyk,
Ajeesh K. Somakumar,
Piotr Sybilski,
Ryan Siebenaller,
Emmanuel Rowe,
Saranya Narayanan,
Michael A. Susner,
L. Marcelo Lozano-Sanchez,
Andrzej Suchocki,
Julio L. Palma,
Svetlana V. Boriskina
Abstract:
Zinc phosphorus trisulfide (ZnPS$_3$), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. We explore its optical and structural properties under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). Our results identify a pre…
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Zinc phosphorus trisulfide (ZnPS$_3$), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. We explore its optical and structural properties under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). Our results identify a pressure-induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS$_3$ demonstrates robust stability across a broad pressure range of 15 to 100 GPa. DFT calculations predict a semiconductor-to-semimetal transition at 100 GPa, while PL measurements reveal defect-assisted emissions that quench under pressure due to enhanced non-radiative recombination. At cryogenic temperatures, PL quenching intensifies as non-radiative processes dominate, driven by a rising Grüneisen parameter and reduced phonon population. Cryogenic X-ray diffraction (XRD) also reveals a high mean thermal expansion coefficient (TEC) of (4.369 $\pm$ 0.393) $\times$ 10$^{-5}$ K$^{-1}$, among the highest reported for 2D materials. This unique combination of tunable electronic properties under low pressure and high thermal sensitivity makes ZnPS$_3$ a strong candidate for sensing applications in extreme environments.
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Submitted 24 January, 2025;
originally announced January 2025.
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Defect-Induced Strain-Tunable Photoluminescence in AgScP$_2$S$_6$
Authors:
Abhishek Mukherjee,
Damian Wlodarczyk,
Ajeesh K. Somakumar,
Piotr Sybilski,
Ryan Siebenaller,
Michael A. Susner,
Andrzej Suchocki,
Svetlana V. Boriskina
Abstract:
Metal thiophosphates (MTPs) are a large family of 2D materials that exhibit large structural and chemical diversity. They also show promise for applications in energy harvesting and photodetection. Strain and defect engineering have previously been demonstrated as useful mechanisms to tune several properties of MTPs such as resistivity, magnetic state, and electronic band gap. However, the effect…
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Metal thiophosphates (MTPs) are a large family of 2D materials that exhibit large structural and chemical diversity. They also show promise for applications in energy harvesting and photodetection. Strain and defect engineering have previously been demonstrated as useful mechanisms to tune several properties of MTPs such as resistivity, magnetic state, and electronic band gap. However, the effect of these stimuli on engineering tunable light emission in MTPs remains unexplored. Here, we show experimentally that structural defects in metal thiophosphate AgScP$_2$S$_6$ are prominent in exhibiting photoluminescence, which is likely driven by the defect-state-to-conduction-band transitions and can be further tuned by temperature-induced strain gradients.
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Submitted 3 March, 2024;
originally announced March 2024.
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Raman fingerprints of spin-phonon coupling and magnetic transition in an organic molecule intercalated Cr2Ge2Te6
Authors:
Sudeshna Samanta,
Hector Iturriaga,
Thuc T. Mai,
Adam J. Biacchi,
Rajbul Islam,
Angela R. Hight Walker,
Mohamed Fathi Sanad,
Charudatta Phatak,
Ryan Siebenaller,
Emmanuel Rowe Michael A. Susner,
Fei Xue,
Srinivasa R. Singamaneni
Abstract:
The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evide…
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The manipulation of spin-phonon coupling in both formations and explorations of magnetism in two-dimensional van der Waals ferromagnetic semiconductors facilitates unprecedented prospects for spintronics devices. The interlayer engineering tunes spin-phonon coupling significantly and holds the promise for controllable magnetism via organic cation intercalation. Here, we present spectroscopic evidence to reveal the intercalation effect on intrinsic magnetic and electronic transitions in quasi-two-dimensional Cr2Ge2Te6 using tetrabutyl ammonium as the intercalant. The temperature-evolution of Raman modes E_g^3 and A_g^1, along with the magnetization measurements, unambiguously captures the enhancement of the ferromagnetic Curie temperature in the intercalated heterostructure. Moreover, the E_g^4 mode highlighted the increased effect of spin-phonon interaction in magnetic order-induced lattice distortion. Combined with the first-principle calculations, we observed a substantial number of electrons transferred from TBA+ to Cr through the interface. These results provide the interplay between spin-phonon coupling and magnetic ordering in van der Waals magnets where Raman fingerprints would be highly beneficial for further understanding the manipulation of magnetism in layered heterostructures.
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Submitted 2 December, 2023;
originally announced December 2023.
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Investigating strain between phase-segregated domains in Cu-deficient CuInP2S6
Authors:
Rahul Rao,
Ryan Selhorst,
Jie Jiang,
Benjamin S. Conner,
Ryan Siebenaller,
Emmanuel Rowe,
Andrea Giordano,
Ruth Pachter,
Michael A. Susner
Abstract:
CuInP2S6 (CIPS) is an emerging layered ferroelectric material with a TC above room temperature. When synthesized with Cu deficiencies (i.e., Cu1-xIn1+x/3P2S6), the material segregates into CIPS and In4/3P2S6 (IPS) self-assembled heterostructures within the same single crystal. This segregation results in significant in-plane and out-of-plane strains between the CIPS and IPS phases as the volume fr…
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CuInP2S6 (CIPS) is an emerging layered ferroelectric material with a TC above room temperature. When synthesized with Cu deficiencies (i.e., Cu1-xIn1+x/3P2S6), the material segregates into CIPS and In4/3P2S6 (IPS) self-assembled heterostructures within the same single crystal. This segregation results in significant in-plane and out-of-plane strains between the CIPS and IPS phases as the volume fraction of CIPS (IPS) domains shrink (grow) with decreasing Cu fraction. Here, we synthesized CIPS with varying amounts of Cu (x = 0, 0.2, 0.3, 0.4, 0.5, 0.7, 0.8 and 1) and measured the strains between the CIPS and IPS phases through the evolution of the respective Raman, infrared, and optical reflectance spectra. Density functional theory calculations revealed vibrational modes unique to the CIPS and IPS phases, which can be used to distinguish between the two phases through two-dimensional Raman mapping. A comparison of the composition-dependent frequencies and intensities of the CIPS and IPS Raman peaks showed interesting trends with decreasing CIPS phase fraction (i.e., Cu/In ratio). Our data reveal red- and blue-shifted Raman and infrared peak frequencies that we correlate to lattice strains arising from the segregation of the material into CIPS and IPS chemical domains. The strain is highest for a Cu/In ratio of 0.33 (Cu0.4In1.2P2S6), which we attribute to equal and opposite strains exerted by the CIPS and IPS phases on each other. In addition, bandgaps extracted from the optical reflectance spectra revealed a decrease in values, with the lowest value (~ 2.3 eV) for Cu0.4In1.2P2S6.
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Submitted 24 May, 2023;
originally announced May 2023.
