Dielectric Properties of Polysulfone Carbon Nanotube Composite Membranes
Authors:
Bhakti Hirani,
P. S. Goyal,
Deepali Shrivastava,
S. K. Deshpande
Abstract:
Polymeric membranes, including Polysulfone (PSf) membranes, are routinely used for water treatment. To enhance water permeation of above membranes, it is common to synthesize polymeric membranes with carbon nanotubes (CNTs) embedded in them. It is seen that water permeability of membranes having vertically aligned CNTs is higher, as compared to those where CNTs are not aligned. It is of interest t…
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Polymeric membranes, including Polysulfone (PSf) membranes, are routinely used for water treatment. To enhance water permeation of above membranes, it is common to synthesize polymeric membranes with carbon nanotubes (CNTs) embedded in them. It is seen that water permeability of membranes having vertically aligned CNTs is higher, as compared to those where CNTs are not aligned. It is of interest to examine if the dielectric constant of a CNT based nanocomposite membrane is sensitive to alignment of CNTs or not. This paper reports dielectric properties of PSf-MWCNT membranes, both, for aligned and unaligned MWCNTs. Multi Walled Carbon Nanotubes (MWCNTs) based polysulfone membranes were synthesized using standard methods. MWCNTs in above membranes were aligned by casting the membrane in presence of magnetic field. The present paper, for the first time, shows that the above result is valid for membranes also.
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Submitted 6 January, 2022;
originally announced January 2022.
Metal-chalcogen bond-length induced electronic phase transition from semiconductor to topological semimetal in ZrX$_2$ (X = Se and Te)
Authors:
I. Kar,
Joydeep Chatterjee,
Luminita Harnagea,
Y. Kushnirenko,
A. V. Fedorov,
Deepika Shrivastava,
B. Büchner,
P. Mahadevan,
S. Thirupathaiah
Abstract:
Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe$_2$. ARPES studies on ZrTe$_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe…
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Using angle resolved photoemission spectroscopy (ARPES) and density functional theory (DFT) calculations we studied the low-energy electronic structure of bulk ZrTe$_2$. ARPES studies on ZrTe$_2$ demonstrate free charge carriers at the Fermi level, which is further confirmed by the DFT calculations. An equal number of hole and electron carrier density estimated from the ARPES data, points ZrTe$_2$ to a semimetal. The DFT calculations further suggest a band inversion between Te $p$ and Zr $d$ states at the $Γ$ point, hinting at the non-trivial band topology in ZrTe$_2$. Thus, our studies for the first time unambiguously demonstrate that ZrTe$_2$ is a topological semimetal. Also, a comparative band structure study is done on ZrSe$_2$ which shows a semiconducting nature of the electronic structure with an indirect band gap of 0.9 eV between $Γ(A) $ and $M (L)$ high symmetry points. In the below we show that the metal-chalcogen bond-length plays a critical role in the electronic phase transition from semiconductor to a topological semimetal ingoing from ZrSe$_2$ to ZrTe$_2$.
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Submitted 9 July, 2019;
originally announced July 2019.
